WO2011049764A2 - Leadframe packages having enhanced ground-bond reliability - Google Patents
Leadframe packages having enhanced ground-bond reliability Download PDFInfo
- Publication number
- WO2011049764A2 WO2011049764A2 PCT/US2010/052061 US2010052061W WO2011049764A2 WO 2011049764 A2 WO2011049764 A2 WO 2011049764A2 US 2010052061 W US2010052061 W US 2010052061W WO 2011049764 A2 WO2011049764 A2 WO 2011049764A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bonding
- die
- pad
- die attach
- attach pad
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/4848—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
- H01L2224/85207—Thermosonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates generally to lead frame based semiconductor packages. More particularly, arrangements that enhance the reliability of electrical connections between a die and a die attach pad that serves as a contact for the package are described.
- bonding wires are often used to electrically connect I/O pads on the die (frequently referred to as “bond pad”) to corresponding leads/contacts in the lead frame.
- bond pad the bonding wires and portions of the lead frame are encapsulated in plastic for protection, while leaving portions of the lead frame exposed to facilitate electrical connection to external devices.
- DAP die attach pad
- the die attach pad is exposed on a surface of the package (typically the bottom surface).
- An exposed die attach pad can help with the thermal management of the package because the die attach pad provides a good thermal conduction path for dissipating excess heat generated by the die.
- the die attach pad is also used as an electrical contact for the package. Most commonly, the die attach pad is used as the ground pad, although in a few packages it may be used as a power pad and theoretically it could alternatively be used as a signal pad.
- bonding wires are often used to electrically connect one or more ground I/O pads on the die to the die attach pad (a process frequently referred to as "down bonding").
- very fine gold or copper wires are used as the bonding wires and the lead frame is formed from copper or a copper based alloy. Since gold does not adhere well to copper, the top surface of the die attach pad (and other relevant portions of the lead frame) are typically plated with a thin film of silver which adheres much better than copper to the gold bonding wires.
- a problem that occasionally occurs is that the die will sometimes delaminate from the die attach pad during use of the device.
- Delamination may also occur between the die attach pad and the mold compound that encapsulates the die. When delamination occurs, movement of the die relative to the die attach pad can sometimes detach the down bonding wires from the die attach pad or otherwise break the down bonding wires.
- delamination problems can also occur at the leads. For example, delamination sometimes occurs between the molding material and the lead fingers, particularly in the regions of the lead frame that are silver plated. Delamination between the molding material and the leads can also damage the bonding wires.
- FIGS. 1A and IB A representative lead frame suitable for use in a package having an exposed die attach pad is diagrammatically illustrated in FIGS. 1A and IB.
- FIG. 1A is a top plan view of the lead frame 100 with a die attached and electrically connected to the lead frame.
- FIG IB is a cross-sectional side view of FIG. 1A taken along section line A-A.
- the die 102 is wire bonded to the grounded die attach pad 104 using ground bonding wires 106.
- One end of a ground bonding wire 106 attaches to a ground I/O pad 110 on the die 102, while the other end attaches directly to the die attach pad 104.
- the grounded die attach pad 104 is often plated with silver in order to improve the quality of the bond.
- bonding wires 108 connect I/O pads 116 of the die 102 to associated leads 112 of the lead frame 124 in order to electrically connect the die as desired in the integrated circuit design.
- bonding wires 108 may be used to connect the die 102 to a power source, signal line, or any other suitable electrical connection.
- the die attach pad 104 is supported by tie bars 118.
- one or more selected I/O pads (e.g., ground I/O pads) on a die are electrically coupled to a portion of a tie bar that carries a die attach pad, or a structure that is connected to such a tie bar.
- the bonding region is elevated above the die attach pad. Since the bonding wires that electrically connect the die to the die attach pad are bonded in a different plane then the die attach pad, the bonds are less likely to break or to be damaged should the die delaminate from the die attach pad. Downsetting the die attach pad from the bonding region permits more relative motion in the event of delamination, resulting in a ground bond with enhanced electrical reliability.
- the bonding region is wider than the other portions of the associated tie bar. Such an arrangement allows multiple ground I/O pads to be electrically coupled to the die attach pad.
- Some embodiments may have a rectangular enlarged bonding region, while other embodiments may have a fused lead shape.
- the fused lead shape includes at least one finger portion that extends from the tie bar inwardly toward the die attach pad.
- the increased surface area of the enlarged bonding region allows for multiple groundbond locations on a tie bar.
- the lead frame may have multiple tie bars and enlarged bonding regions, which may be positioned on opposing sides of a die or at other suitable locations.
- the semiconductor package may also be encapsulated in a plastic encapsulant in order to protect any associated devices.
- the back surface of the die attach pad is often exposed to facilitate electrical connections to external devices.
- FIG. 1A illustrates a top plan view of a prior art integrated circuit package, in which ground bond pads on the die are down bonded to a grounded die attach pad.
- FIG. IB illustrates a side cross-sectional view of the package shown in FIG. 1A, taken along section A-A.
- FIG. 2A illustrates a top plan view of a lead frame device area with an enlarged bonding region on the tie bars in accordance with one embodiment of the present invention.
- FIG. 2B illustrates a top plan view of an integrated circuit package that includes a die attached to the lead frame device area of FIG. 2A, with the die electrically coupled to enlarged bonding regions of the tie bars in accordance with one embodiment of the present invention.
- FIG. 2C illustrates a side cross-sectional view taken along section B-B of the embodiment of FIG. 2B, which shows the ground bonding wires electrically coupled to the elevated bonding regions of the tie bars in accordance with one embodiment of the present invention.
- FIG. 2D illustrates a side cross-sectional view taken along section C-C of the embodiment of FIG. 2B, which shows the bonding wires electrically coupled to the leads in accordance with one embodiment of the present invention.
- FIG. 3 A illustrates a top plan view of a lead frame device area having an enlarged bonding region on the tie bars in accordance with another embodiment of the present invention.
- FIG. 3B illustrates a top plan view of an integrated circuit package that includes a die attached to the lead frame device area of FIG. 3A, with the die electrically coupled to enlarged grounded regions of the tie bars in accordance with another embodiment of the present invention.
- FIG. 3C illustrates a side cross-sectional view of the integrated circuit package of FIG. 3B, taken along section F-F, wherein the ground I/O pads are coupled to the enlarged bonding regions of the tie bars in accordance with one embodiment of the present invention.
- FIG. 4A illustrates a side cross-sectional view of an integrated circuit package, wherein a bonding wire is coupled directly to the die attach pad via a ball bond with wedge stitched on ball. (BSOB).
- BSOB wedge stitched on ball.
- FIG. 4B illustrates a side cross-sectional view of an integrated circuit package, wherein a bonding wire is coupled directly to the die attach pad via a reverse ball stitched on ball. (RBSOB).
- FIGS. 5A-5C illustrate in top plan views a lead frame strip 524 containing multiple device areas 514 in accordance with one embodiment of the present invention.
- the present invention relates generally to improved designs and techniques for electrically connecting selected I/O pads on a die (e.g. ground pads) to a die attach pad in lead frame based integrated circuit packages.
- some lead frame based integrated circuit packages are designed such that the die is electrically connected to ground by wire bonding the die directly to a grounded die attach pad portion of the lead frame. This process is frequently referred to as "down bonding."
- a problem that sometimes arises in down bonded packages is that the die can sometimes delaminate from the die attach pad, potentially resulting in relative motion between the die and die attach pad. When such movement occurs, there is a risk that the down bonded bonding wires may be torn from the die attach pad or otherwise damaged or broken, which may result in poor electrical reliability.
- the present invention describes an integrated circuit package, wherein selected ground I/O pads on the die are electrically coupled to a wire bonding landing region of a tie bar using bonding wires.
- the tie bar which is part of the lead frame, is directly connected to, and mechanically supports the die attach pad during packaging, but generally is not itself intended for use as an electrical contact for the package.
- the tie bar is a thin piece of metal used only to support the die attach pad.
- the present application contemplates further using the tie bar as part of a ground plane for the integrated circuit package.
- the die mounting surface of the die attach pad is downset relative to the wire bonding landing region of the tie bar.
- the wire bonding landing region is at the same elevation within the package as the leads.
- the die attach pad can be used as a contact for other functions, such as a power source or a signal terminal.
- FIG. 2A illustrates a top plan view of one device area 214 of a lead frame panel 224, which includes leads 212, tie bars 218, and a die attach pad 204.
- enlarged bonding regions 220 are integrally formed with the tie bars 218.
- the die attach pad 204 is carried by the tie bars 218 and is therefore electrically and mechanically coupled to the tie bars 218, which in turn are attached to support bars 223 in the lead frame panel 224.
- a plurality of leads 212 are also mechanically attached to the lead frame 224 and extend inwardly toward the die attach pad 204.
- the bonding region 220 may be grounded by electrically connecting to a grounded die attach pad 204 via the tie bars 218.
- a grounded die attach pad 204 via the tie bars 218.
- the bonding region 220 is formed as a rectangular area that is effectively a part of the tie bar 218. It will be appreciated, however, that the bonding region 220 may be formed at other suitable locations on the tie bar and may take any other suitable shapes and sizes. The bonding region 220 is typically wider than other portions of its associated tie bar 218. The larger region may be useful for a variety of reasons, such as providing greater surface area to bond multiple wires. Also, although two tie bars and enlarged bonding regions are shown in this embodiment, each device area 214 may have only one tie bar and bonding region, or, alternatively, more than two tie bars and bonding regions as required by the design of the die. FIG. 2A illustrates mechanically connecting two tie bars 218 to the die attach pad 204 on opposing sides of the die attach pad 204, but the tie bars 218 may also attach to any (or all) of the die attach pad corners.
- FIG. 2B depicts a top plan view of an integrated circuit package 200.
- a die 202 is mechanically affixed to the die mounting surface 226 of the die attach pad 204.
- the die includes a plurality of I/O pads (bond pads) on the active surface of the die 202.
- Each I/O pad in a first set of I/O pads 216 is designed to connect the die 202 to associated leads 212 of the lead frame 224.
- the I/O pads 216 may be used for a variety of purposes, including connecting the die 202 to power sources, signal lines, ground planes, or other suitable functions. As illustrated in FIG. 2B, the I/O pads 216 are electrically connected to the leads 212 using bonding wires 208.
- the bonding wires 208 are made of gold, although other suitable materials such as copper may be used. Moreover, the bonding wires are preferably bonded thermosonically, resulting in a gold ball bond at an I/O pad 216 and a stitch bond at a corresponding lead 212.
- Each I/O pad in a second set of I/O pads 210 (“ground I/O pads”) is designed to electrically connect the die 202 to a ground plane, which in this case is the enlarged bonding region 220.
- the ground I/O pads 210 are bonded to the enlarged bonding regions 220 of the tie bars 218 via ground bonding wires 206.
- the ground bonding wires are made of gold, and the bonds are created ultrasonically, resulting in a gold ball bond at an I/O pad 210 and a stitch bond at a corresponding enlarged bonding region 220.
- two ground bonding wires 206 connect to each bonding region 220 in FIG. 2B, it may be useful in some embodiments to connect only one or, alternatively, greater than two ground bonding wires to a single bonding region.
- Integrated circuit package 200 may also include an encapsulant, which is not shown in FIG. 2B.
- FIG. 2C illustrates a side cross-sectional view of the package 200 presented in FIG. 2B, taken along section B-B.
- the die mounting surface 226 of the die attach pad 204 is preferably downset from the enlarged bonding regions 220 of the tie bars 218 by a distance hj.
- Coupling the ground bonding wires 206 to an elevated, enlarged bonding region 220 improves the electrical reliability of the groundbond.
- the connection is less susceptible to damage due to die delamination, because the loop created by the ground bonding wires permits more relative motion than the prior art designs, such as that which is shown in FIG. 1. Relative motion between the die and die attach pad is therefore less likely to result in damage to the ground bonding wires 206.
- FIG. 2D is a side cross-sectional view of the package 200 presented in FIG. 2B, taken along section C-C.
- the leads 212 extend inwardly toward the die 202. Although the leads 212 do not directly overlie the die 202 in FIG. 2D, one skilled in the art would appreciate that the leads 212 may be positioned differently.
- the die mounting surface 226 of the die attach pad 204 is downset from the leads 212 by a distance h 2 .
- the distance h 2 may be larger or smaller than the distance hi shown in FIG. 2C. In a preferred embodiment, however, the distances hi and h 2 are substantially equivalent, such that the enlarged bonding regions 220 and the leads 212 are positioned at approximately the same elevation above the die mounting surface 226.
- Portions of the die 202, die attach pad 204, leads 212, I/O pads 216, ground I/O pads 210, bonding wires 208, ground bonding wires 206, and tie bars 218 may be encapsulated within the encapsulant or molding material 222.
- the molding compound is generally a non-conductive plastic or resin.
- the outer portions of the leads 212 extend from the sides of the encapsulated package 200 to facilitate electrical connection with a suitable substrate.
- the bottom surface of the die attach pad 204 is exposed through the encapsulant 222 to facilitate electrically coupling the die attach pad 204 to an electrical ground plane. Since the die attach pad 204 is electrically connected to the bonding region 220 of the tie bar 218, this presents one method of electrically connecting the ground I/O pads to ground.
- FIG. 3A shows a lead frame device area 314 having enlarged bonding regions 320 on the tie bars 318 and having multiple leads 312 extending inwardly toward the die attach pad 304.
- the shape of the enlarged bonding region 320 of FIG. 3A includes at least one finger portion 330 that extends from the tie bar 318 inwardly toward the die attach pad 304.
- the large surface area of the bonding region 320 allows for multiple ground bond locations on a single tie bar 318.
- the bonding region 320 is electrically connected to the die attach pad 304 through the tie bar 318.
- FIG. 3B depicts a top view of an integrated circuit package 300 with a die 302 attached to the die attach pad 304.
- bonding wires 308 electrically connect selected I/O pads 316 from the die 302 to the leads 312.
- the I/O pads 316 may be used for a variety of purposes, including connecting the die 302 to power sources, signal lines, ground planes, or other suitable functions.
- the bonding wires 308 are made of gold.
- the bonding wires 308 are preferably bonded ultrasonically, resulting in a gold ball bond at an I/O pad 316 and a stitch bond at a corresponding lead 312.
- a second set of I/O pads 310 is designed to electrically connect the die 302 to a ground plane.
- the ground I/O pads 310 are bonded to the enlarged bonding regions 320 of the tie bars 318 via ground bonding wires 306.
- the ground bonding wires 306 are made of gold, and the bonds are created ultrasonically, resulting in a gold ball bond at an I/O pad 310 and a stitch bond at a corresponding enlarged bonding region 320.
- FIG. 3C illustrates a side cross-sectional view of the integrated circuit package 300 taken along section F-F of FIG. 3B.
- the ground bonding wire 306 electrically connects the ground I/O pad 310 to the enlarged bonding region 320 of the tie bar 318.
- the ground bonding wire 306 is bonded ultrasonically to a finger portion 330 of the bonding region 320 that extends inwardly toward the die.
- the die mounting surface 326 of the die attach pad 304 is downset from the enlarged bonding regions 320 by a distance hj and is downset from the leads 312 by a distance h 2 .
- the bonding regions 320 and the leads 312 can be at substantially the same elevation above the die mounting surface 326 of the die attach pad 304.
- the elevated positioning of the enlarged bonding region 320 improves the reliability of the ground bond by reducing the associated stresses on the ground bonding wires 306.
- FIGS. 4A and 4B present yet another approach to improving ground bond reliability in integrated circuit packages.
- some of the ground I/O pads 410 on the die 402 are coupled directly to the grounded die attach pad 404 using a ball bond with wedge stitched on ball (BSOB) technique.
- BSOB ball bond with wedge stitched on ball
- the bump 432 is made by using a standard wire bonding capillary to ultrasonically deposit a ball bond onto the grounded die attach pad 404. Rather than continuing the extrusion of the wire, the capillary truncates the wire near the top of the ball bond bump 432, such that only a wire bonding "ball” or "bump” 432 remains atop the die attach pad 404.
- the bump 432 may be created using more force than normally used for wire bonding, which has the effect of flattening the bump thereby increasing its bonding surface area and increasing the strength of the resultant bump.
- the ground I/O pad 410 is then wire bonded to the bump 432 using bonding wires 406.
- the bonding wires 406 may be formed from gold, copper or other suitable conductive materials.
- a second ball bond is preferably formed at the ground I/O pad 410, and a stitch bond 434 may be formed on top of the bump 432.
- the bonding wires 406 electrically couple to the grounded die attach pad 404 via a stitch bond 434 located atop the bump 432.
- the bump 432 is approximately one-third the height of the ball bond at the ground I/O pad 410. If the die attach pad 404 is plated with silver, the embodiment disclosed in FIG. 4 improves the reliability of the ground bond.
- the ball bond bump 432 adheres to the silver-plated die attach pad 404 better than a stitch bond.
- the bump 432 provides an interface between the bonding wires 406 and the die mounting surface 426 of the die attach pad 404, thereby reducing the shear stress in the bonding wires 406 and improving reliability.
- FIG. 4B An alterative stitch on ball technique is illustrated in Fig. 4B.
- an initial bump 442 is formed on a ground I/O pad 410 pad on the die 402.
- a bonding wire 406 is then used to electrically connect the die attach pad 404 to the bump 442 on I/O pad 410.
- a second ball bond 446 is formed on the die attach pad 404.
- the wire bonder may utilized more bonding force than normal, which has the effect of flattening the bump, thereby bond strength and surface area.
- FIGS. 5A-5C yet another embodiment of the present invention will be described.
- a lead frame strip 524 that supports an array 528 of device areas 514.
- Such a configuration allows for the mass production of integrated circuit packages.
- FIGS. 5A-5C depict device areas similar to those presented in FIGS. 2A-2D, it should also be appreciated that the lead frame may support the embodiments of FIGS. 3A-3C and FIG. 4, as well as any other suitable embodiments.
- FIG. 5A depicts a portion of a lead frame strip 524 that has a multiplicity of device areas 514.
- the device areas 514 are arranged in at least one two dimensional array 528 on the panel 524, although a variety of other arrangements are possible (e.g. a one dimensional array, non-linear arrangements, etc.).
- five two-dimensional arrays 528 of device areas 514 are shown.
- the lead frame panels 524 are typically formed from copper or a copper based alloy, although other suitable materials (e.g., aluminum) may be used in various alternative embodiments.
- Each device area 514 may contain an integrated circuit package as described in any of the above embodiments.
- the lead frame 524 is singulated as necessary to yield multiple, individual integrated circuit packages that are ready for use in any desired application.
- the singulation may be arranged to sacrifice the tie bars 518 and may electrically isolate the leads 512 from the die attach pad portion 504 of the lead frame 524.
- the present invention may also be employed in any suitable integrated circuit packaging style.
- the integrated circuit package 200 may be used as a dual in-line package (DIP) that has two rows of leads 212 on opposing sides of the die 202.
- DIP dual in-line package
- the disclosed packages may also be useful in a variety of other packaging styles, such as quad flat packages (QFP) and thin small outline packages (TSOP).
- QFP quad flat packages
- TSOP thin small outline packages
- the die attach pad is downset relative to both the leads and the wire bonding regions of the tie bars.
- packages e.g., QFN or LLP packages
- bottom surfaces of the leads may serve as contacts that are co-planar with the bottom surface of the die attach pad.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010800427454A CN102576698A (en) | 2009-10-19 | 2010-10-08 | Leadframe packages having enhanced ground-bond reliability |
JP2012535229A JP2013508974A (en) | 2009-10-19 | 2010-10-08 | Leadframe package with improved ground bond reliability |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/581,609 | 2009-10-19 | ||
US12/581,609 US8093707B2 (en) | 2009-10-19 | 2009-10-19 | Leadframe packages having enhanced ground-bond reliability |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011049764A2 true WO2011049764A2 (en) | 2011-04-28 |
WO2011049764A3 WO2011049764A3 (en) | 2011-11-17 |
Family
ID=43878665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2010/052061 WO2011049764A2 (en) | 2009-10-19 | 2010-10-08 | Leadframe packages having enhanced ground-bond reliability |
Country Status (5)
Country | Link |
---|---|
US (1) | US8093707B2 (en) |
JP (1) | JP2013508974A (en) |
CN (1) | CN102576698A (en) |
TW (1) | TWI515855B (en) |
WO (1) | WO2011049764A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102800765A (en) * | 2012-03-21 | 2012-11-28 | 深圳雷曼光电科技股份有限公司 | Light emitting diode (LED) packaging structure and packaging process for same |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110115063A1 (en) * | 2009-11-18 | 2011-05-19 | Entropic Communications, Inc. | Integrated Circuit Packaging with Split Paddle |
US20110140253A1 (en) * | 2009-12-14 | 2011-06-16 | National Semiconductor Corporation | Dap ground bond enhancement |
US9337240B1 (en) * | 2010-06-18 | 2016-05-10 | Altera Corporation | Integrated circuit package with a universal lead frame |
TWI489607B (en) * | 2010-11-23 | 2015-06-21 | 登豐微電子股份有限公司 | Package structure |
US9147656B1 (en) * | 2014-07-11 | 2015-09-29 | Freescale Semicondutor, Inc. | Semiconductor device with improved shielding |
US9922904B2 (en) | 2015-05-26 | 2018-03-20 | Infineon Technologies Ag | Semiconductor device including lead frames with downset |
US10249556B1 (en) * | 2018-03-06 | 2019-04-02 | Nxp B.V. | Lead frame with partially-etched connecting bar |
US20190287918A1 (en) * | 2018-03-13 | 2019-09-19 | Texas Instruments Incorporated | Integrated circuit (ic) packages with shields and methods of producing the same |
CN109192715B (en) * | 2018-09-20 | 2024-03-22 | 江苏长电科技股份有限公司 | Lead frame structure, packaging structure and manufacturing method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020096766A1 (en) * | 2001-01-24 | 2002-07-25 | Chen Wen Chuan | Package structure of integrated circuits and method for packaging the same |
US20060012035A1 (en) * | 2002-12-10 | 2006-01-19 | Infineon Technologies Ag | Method of packaging integrated circuits, and integrated circuit packages produced by the method |
US20080272479A1 (en) * | 2007-05-03 | 2008-11-06 | Henry Descalzo Bathan | Integrated circuit package system with device cavity |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5328079A (en) | 1993-03-19 | 1994-07-12 | National Semiconductor Corporation | Method of and arrangement for bond wire connecting together certain integrated circuit components |
JP3074264B2 (en) * | 1997-11-17 | 2000-08-07 | 富士通株式会社 | Semiconductor device and its manufacturing method, lead frame and its manufacturing method |
US6072228A (en) * | 1996-10-25 | 2000-06-06 | Micron Technology, Inc. | Multi-part lead frame with dissimilar materials and method of manufacturing |
JP3356680B2 (en) * | 1998-04-10 | 2002-12-16 | 日本電気株式会社 | Lead frame, semiconductor device, and method of manufacturing semiconductor device |
US6398556B1 (en) * | 1998-07-06 | 2002-06-04 | Chi Fai Ho | Inexpensive computer-aided learning methods and apparatus for learners |
JP3062691B1 (en) * | 1999-02-26 | 2000-07-12 | 株式会社三井ハイテック | Semiconductor device |
WO2001009953A1 (en) * | 1999-07-30 | 2001-02-08 | Amkor Technology, Inc. | Lead frame with downset die pad |
KR100359304B1 (en) * | 2000-08-25 | 2002-10-31 | 삼성전자 주식회사 | Lead frame having a side ring pad and semiconductor chip package including the same |
US6424024B1 (en) * | 2001-01-23 | 2002-07-23 | Siliconware Precision Industries Co., Ltd. | Leadframe of quad flat non-leaded package |
US6661083B2 (en) * | 2001-02-27 | 2003-12-09 | Chippac, Inc | Plastic semiconductor package |
TW552689B (en) * | 2001-12-21 | 2003-09-11 | Siliconware Precision Industries Co Ltd | High electrical characteristic and high heat dissipating BGA package and its process |
JP2005520339A (en) | 2002-03-12 | 2005-07-07 | フェアチャイルド セミコンダクター コーポレーション | Wafer level coated copper stud bump |
US7229906B2 (en) * | 2002-09-19 | 2007-06-12 | Kulicke And Soffa Industries, Inc. | Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine |
TWI250632B (en) * | 2003-05-28 | 2006-03-01 | Siliconware Precision Industries Co Ltd | Ground-enhancing semiconductor package and lead frame |
US7049683B1 (en) * | 2003-07-19 | 2006-05-23 | Ns Electronics Bangkok (1993) Ltd. | Semiconductor package including organo-metallic coating formed on surface of leadframe roughened using chemical etchant to prevent separation between leadframe and molding compound |
KR100536898B1 (en) | 2003-09-04 | 2005-12-16 | 삼성전자주식회사 | Wire bonding method of semiconductor device |
US7214606B2 (en) | 2004-03-11 | 2007-05-08 | Asm Technology Singapore Pte Ltd. | Method of fabricating a wire bond with multiple stitch bonds |
US7247937B2 (en) * | 2005-01-06 | 2007-07-24 | Via Technologies, Inc. | Mounting pad structure for wire-bonding type lead frame packages |
JP4252563B2 (en) * | 2005-07-05 | 2009-04-08 | 株式会社ルネサステクノロジ | Semiconductor device |
-
2009
- 2009-10-19 US US12/581,609 patent/US8093707B2/en active Active
-
2010
- 2010-10-08 CN CN2010800427454A patent/CN102576698A/en active Pending
- 2010-10-08 WO PCT/US2010/052061 patent/WO2011049764A2/en active Application Filing
- 2010-10-08 JP JP2012535229A patent/JP2013508974A/en active Pending
- 2010-10-18 TW TW099135404A patent/TWI515855B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020096766A1 (en) * | 2001-01-24 | 2002-07-25 | Chen Wen Chuan | Package structure of integrated circuits and method for packaging the same |
US20060012035A1 (en) * | 2002-12-10 | 2006-01-19 | Infineon Technologies Ag | Method of packaging integrated circuits, and integrated circuit packages produced by the method |
US20080272479A1 (en) * | 2007-05-03 | 2008-11-06 | Henry Descalzo Bathan | Integrated circuit package system with device cavity |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102800765A (en) * | 2012-03-21 | 2012-11-28 | 深圳雷曼光电科技股份有限公司 | Light emitting diode (LED) packaging structure and packaging process for same |
Also Published As
Publication number | Publication date |
---|---|
TWI515855B (en) | 2016-01-01 |
US8093707B2 (en) | 2012-01-10 |
CN102576698A (en) | 2012-07-11 |
TW201125092A (en) | 2011-07-16 |
US20110089556A1 (en) | 2011-04-21 |
WO2011049764A3 (en) | 2011-11-17 |
JP2013508974A (en) | 2013-03-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8093707B2 (en) | Leadframe packages having enhanced ground-bond reliability | |
US9087827B2 (en) | Mixed wire semiconductor lead frame package | |
US9159588B2 (en) | Packaged leadless semiconductor device | |
US6723585B1 (en) | Leadless package | |
US7436049B2 (en) | Lead frame, semiconductor chip package using the lead frame, and method of manufacturing the semiconductor chip package | |
US6541846B2 (en) | Dual LOC semiconductor assembly employing floating lead finger structure | |
US20110140253A1 (en) | Dap ground bond enhancement | |
US20110223719A1 (en) | Semiconductor device and manufacturing method of the same | |
US8643158B2 (en) | Semiconductor package and lead frame therefor | |
JP2013508974A5 (en) | ||
US7642638B2 (en) | Inverted lead frame in substrate | |
US6692991B2 (en) | Resin-encapsulated semiconductor device and method for manufacturing the same | |
US7875968B2 (en) | Leadframe, semiconductor package and support lead for bonding with groundwires | |
US20020113304A1 (en) | Dual die package and manufacturing method thereof | |
US8258611B2 (en) | Leadframe structure for electronic packages | |
JP3468447B2 (en) | Resin-sealed semiconductor device and method of manufacturing the same | |
JP4040549B2 (en) | Semiconductor device | |
KR20010045680A (en) | Lead on chip type semiconductor chip package | |
KR19990050846A (en) | Leadframe structure | |
JP2005093469A (en) | Semiconductor device and its manufacturing process |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080042745.4 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10825407 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012535229 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10825407 Country of ref document: EP Kind code of ref document: A2 |