WO2011057062A3 - Dual conducting floating spacer metal oxide semiconductor field effect transistor (dcfs mosfet) and method to fabricate the same - Google Patents

Dual conducting floating spacer metal oxide semiconductor field effect transistor (dcfs mosfet) and method to fabricate the same Download PDF

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Publication number
WO2011057062A3
WO2011057062A3 PCT/US2010/055605 US2010055605W WO2011057062A3 WO 2011057062 A3 WO2011057062 A3 WO 2011057062A3 US 2010055605 W US2010055605 W US 2010055605W WO 2011057062 A3 WO2011057062 A3 WO 2011057062A3
Authority
WO
WIPO (PCT)
Prior art keywords
dcfs
mosfet
fabricate
metal oxide
oxide semiconductor
Prior art date
Application number
PCT/US2010/055605
Other languages
French (fr)
Other versions
WO2011057062A4 (en
WO2011057062A2 (en
Inventor
Lee Wang
Original Assignee
Flashsilicon, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Flashsilicon, Inc. filed Critical Flashsilicon, Inc.
Publication of WO2011057062A2 publication Critical patent/WO2011057062A2/en
Publication of WO2011057062A3 publication Critical patent/WO2011057062A3/en
Publication of WO2011057062A4 publication Critical patent/WO2011057062A4/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7887—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Abstract

Dual Conducting Floating Spacer Metal Oxide Semiconductor Field Effect Transistors (DCFS MOSFETs) and methods for fabricate them using a process that is compatible with forming conventional MOSFETs are disclosed. A DCFS MOSFET can provide multi-bit storage in a single Non-Volatile Memory (NVM) memory cell. Like a typical MOSFET, a DCFS MOSFET includes a control gate electrode on top of a gate dielectric-silicon substrate, thereby forming a main channel of the device. Two electrically isolated conductor spacers are provided on both sides of the control gate and partially overlap two source/drain diffusion areas, which are doped to an opposite type to the conductivity type of the substrate semiconductor. The DCFS MOSFET becomes conducting when a voltage that exceeds a threshold is applied at the control gate and is coupled through the corresponding conducting floating spacer to generate an electrical field strong enough to invert the carriers near the source junction. By storing charge in the two independent conducting floating spacers, DCFS MOSFET can have two independent sets of threshold voltages associated with the source junctions.
PCT/US2010/055605 2009-11-06 2010-11-05 Dual conducting floating spacer metal oxide semiconductor field effect transistor (dcfs mosfet) and method to fabricate the same WO2011057062A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/614,265 2009-11-06
US12/614,265 US8415735B2 (en) 2009-11-06 2009-11-06 Dual conducting floating spacer metal oxide semiconductor field effect transistor (DCFS MOSFET) and method to fabricate the same

Publications (3)

Publication Number Publication Date
WO2011057062A2 WO2011057062A2 (en) 2011-05-12
WO2011057062A3 true WO2011057062A3 (en) 2011-07-28
WO2011057062A4 WO2011057062A4 (en) 2011-09-15

Family

ID=43970778

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/055605 WO2011057062A2 (en) 2009-11-06 2010-11-05 Dual conducting floating spacer metal oxide semiconductor field effect transistor (dcfs mosfet) and method to fabricate the same

Country Status (2)

Country Link
US (2) US8415735B2 (en)
WO (1) WO2011057062A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9219167B2 (en) 2013-12-19 2015-12-22 Freescale Semiconductor, Inc. Non-volatile memory (NVM) cell
US10878161B2 (en) * 2018-09-28 2020-12-29 Taiwan Semiconductor Manufacturing Company Ltd. Method and structure to reduce cell width in integrated circuits

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093945A (en) * 1998-07-09 2000-07-25 Windbond Electronics Corp. Split gate flash memory with minimum over-erase problem
US20020130356A1 (en) * 2000-02-01 2002-09-19 Taiwan Semiconductor Manufacturing Company Novel split gate flash cell for multiple storage
US20020153555A1 (en) * 2000-08-01 2002-10-24 Hitachi, Ltd. Nonvolatile semiconductor memory
KR20050069136A (en) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 Non-volatile memory device
US20050162884A1 (en) * 2003-12-31 2005-07-28 Dongbuanam Semiconductor Inc. Non-volatile memory device
US20090140324A1 (en) * 2007-11-29 2009-06-04 Jin-Ha Park Method of manufacturing flash memory device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6103573A (en) * 1999-06-30 2000-08-15 Sandisk Corporation Processing techniques for making a dual floating gate EEPROM cell array
EP1179454A3 (en) * 2000-08-10 2003-03-12 Nihon Plast Co., Ltd. Superimposed airbag portions bonded with silicones
US6746920B1 (en) * 2003-01-07 2004-06-08 Megawin Technology Co., Ltd. Fabrication method of flash memory device with L-shaped floating gate
US7547599B2 (en) * 2005-05-26 2009-06-16 Micron Technology, Inc. Multi-state memory cell

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093945A (en) * 1998-07-09 2000-07-25 Windbond Electronics Corp. Split gate flash memory with minimum over-erase problem
US20020130356A1 (en) * 2000-02-01 2002-09-19 Taiwan Semiconductor Manufacturing Company Novel split gate flash cell for multiple storage
US20020153555A1 (en) * 2000-08-01 2002-10-24 Hitachi, Ltd. Nonvolatile semiconductor memory
KR20050069136A (en) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 Non-volatile memory device
US20050162884A1 (en) * 2003-12-31 2005-07-28 Dongbuanam Semiconductor Inc. Non-volatile memory device
US20090140324A1 (en) * 2007-11-29 2009-06-04 Jin-Ha Park Method of manufacturing flash memory device

Also Published As

Publication number Publication date
WO2011057062A4 (en) 2011-09-15
US8809147B2 (en) 2014-08-19
US8415735B2 (en) 2013-04-09
WO2011057062A2 (en) 2011-05-12
US20110108904A1 (en) 2011-05-12
US20130224917A1 (en) 2013-08-29

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