WO2011068711A3 - High mobility monolithic p-i-n diodes - Google Patents

High mobility monolithic p-i-n diodes Download PDF

Info

Publication number
WO2011068711A3
WO2011068711A3 PCT/US2010/057670 US2010057670W WO2011068711A3 WO 2011068711 A3 WO2011068711 A3 WO 2011068711A3 US 2010057670 W US2010057670 W US 2010057670W WO 2011068711 A3 WO2011068711 A3 WO 2011068711A3
Authority
WO
WIPO (PCT)
Prior art keywords
type
substrate
diodes
layer
precursor
Prior art date
Application number
PCT/US2010/057670
Other languages
French (fr)
Other versions
WO2011068711A2 (en
Inventor
Xinhai Han
Nagarajan Rajagopalan
Ji Ae Park
Bencherki Mebarki
Heung Lak Park
Bok Hoen Kim
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2012542086A priority Critical patent/JP2013513238A/en
Priority to CN2010800545874A priority patent/CN102640295A/en
Publication of WO2011068711A2 publication Critical patent/WO2011068711A2/en
Publication of WO2011068711A3 publication Critical patent/WO2011068711A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes

Abstract

Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a group-IV-element-containing precursor with a sequential exposure to an n-type dopant precursor and a p-type dopant precursor in either order. An intrinsic layer is deposited between the n-type and p-type layers by reducing or eliminating the flow of the dopant precursors while flowing the group-IV-element-containing precursor. The substrate may reside in the same processing chamber during the deposition of each of the n-type layer, intrinsic layer and p-type layer and the substrate is not exposed to atmosphere between the depositions of adjacent layers.
PCT/US2010/057670 2009-12-03 2010-11-22 High mobility monolithic p-i-n diodes WO2011068711A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012542086A JP2013513238A (en) 2009-12-03 2010-11-22 High mobility monolithic pin diode
CN2010800545874A CN102640295A (en) 2009-12-03 2010-11-22 High mobility monolithic P-I-N diodes

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US26626409P 2009-12-03 2009-12-03
US61/266,264 2009-12-03
US12/824,032 US8298887B2 (en) 2009-12-03 2010-06-25 High mobility monolithic p-i-n diodes
US12/824,032 2010-06-25

Publications (2)

Publication Number Publication Date
WO2011068711A2 WO2011068711A2 (en) 2011-06-09
WO2011068711A3 true WO2011068711A3 (en) 2011-11-24

Family

ID=44082452

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/057670 WO2011068711A2 (en) 2009-12-03 2010-11-22 High mobility monolithic p-i-n diodes

Country Status (6)

Country Link
US (1) US8298887B2 (en)
JP (1) JP2013513238A (en)
KR (1) KR20120106970A (en)
CN (1) CN102640295A (en)
TW (1) TWI508181B (en)
WO (1) WO2011068711A2 (en)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9570678B1 (en) 2010-06-08 2017-02-14 Crossbar, Inc. Resistive RAM with preferental filament formation region and methods
US9601692B1 (en) 2010-07-13 2017-03-21 Crossbar, Inc. Hetero-switching layer in a RRAM device and method
US9012307B2 (en) 2010-07-13 2015-04-21 Crossbar, Inc. Two terminal resistive switching device structure and method of fabricating
US8946046B1 (en) 2012-05-02 2015-02-03 Crossbar, Inc. Guided path for forming a conductive filament in RRAM
US8198144B2 (en) 2010-06-11 2012-06-12 Crossbar, Inc. Pillar structure for memory device and method
US8374018B2 (en) 2010-07-09 2013-02-12 Crossbar, Inc. Resistive memory using SiGe material
US8884261B2 (en) 2010-08-23 2014-11-11 Crossbar, Inc. Device switching using layered device structure
US8947908B2 (en) 2010-11-04 2015-02-03 Crossbar, Inc. Hetero-switching layer in a RRAM device and method
US8467227B1 (en) 2010-11-04 2013-06-18 Crossbar, Inc. Hetero resistive switching material layer in RRAM device and method
US8168506B2 (en) 2010-07-13 2012-05-01 Crossbar, Inc. On/off ratio for non-volatile memory device and method
US8569172B1 (en) 2012-08-14 2013-10-29 Crossbar, Inc. Noble metal/non-noble metal electrode for RRAM applications
US8492195B2 (en) 2010-08-23 2013-07-23 Crossbar, Inc. Method for forming stackable non-volatile resistive switching memory devices
US8889521B1 (en) 2012-09-14 2014-11-18 Crossbar, Inc. Method for silver deposition for a non-volatile memory device
US8404553B2 (en) 2010-08-23 2013-03-26 Crossbar, Inc. Disturb-resistant non-volatile memory device and method
US9401475B1 (en) 2010-08-23 2016-07-26 Crossbar, Inc. Method for silver deposition for a non-volatile memory device
US8883589B2 (en) * 2010-09-28 2014-11-11 Sandisk 3D Llc Counter doping compensation methods to improve diode performance
US8558212B2 (en) 2010-09-29 2013-10-15 Crossbar, Inc. Conductive path in switching material in a resistive random access memory device and control
US8391049B2 (en) 2010-09-29 2013-03-05 Crossbar, Inc. Resistor structure for a non-volatile memory device and method
USRE46335E1 (en) 2010-11-04 2017-03-07 Crossbar, Inc. Switching device having a non-linear element
US8502185B2 (en) 2011-05-31 2013-08-06 Crossbar, Inc. Switching device having a non-linear element
CN103210500A (en) * 2010-11-16 2013-07-17 夏普株式会社 Method for manufacturing semiconductor device
US8930174B2 (en) 2010-12-28 2015-01-06 Crossbar, Inc. Modeling technique for resistive random access memory (RRAM) cells
US9153623B1 (en) 2010-12-31 2015-10-06 Crossbar, Inc. Thin film transistor steering element for a non-volatile memory device
US8791010B1 (en) 2010-12-31 2014-07-29 Crossbar, Inc. Silver interconnects for stacked non-volatile memory device and method
US8815696B1 (en) 2010-12-31 2014-08-26 Crossbar, Inc. Disturb-resistant non-volatile memory device using via-fill and etchback technique
US9620206B2 (en) 2011-05-31 2017-04-11 Crossbar, Inc. Memory array architecture with two-terminal memory cells
US8619459B1 (en) 2011-06-23 2013-12-31 Crossbar, Inc. High operating speed resistive random access memory
US9166163B2 (en) 2011-06-30 2015-10-20 Crossbar, Inc. Sub-oxide interface layer for two-terminal memory
US9564587B1 (en) 2011-06-30 2017-02-07 Crossbar, Inc. Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
US8659929B2 (en) 2011-06-30 2014-02-25 Crossbar, Inc. Amorphous silicon RRAM with non-linear device and operation
US9627443B2 (en) 2011-06-30 2017-04-18 Crossbar, Inc. Three-dimensional oblique two-terminal memory with enhanced electric field
US8946669B1 (en) 2012-04-05 2015-02-03 Crossbar, Inc. Resistive memory device and fabrication methods
CN103828047A (en) * 2011-07-22 2014-05-28 科洛斯巴股份有限公司 Seed layer for a p + silicon germanium material for non-volatile memory device and method
US10056907B1 (en) 2011-07-29 2018-08-21 Crossbar, Inc. Field programmable gate array utilizing two-terminal non-volatile memory
US8674724B2 (en) 2011-07-29 2014-03-18 Crossbar, Inc. Field programmable gate array utilizing two-terminal non-volatile memory
US9729155B2 (en) 2011-07-29 2017-08-08 Crossbar, Inc. Field programmable gate array utilizing two-terminal non-volatile memory
US8710481B2 (en) * 2012-01-23 2014-04-29 Sandisk 3D Llc Non-volatile memory cell containing a nano-rail electrode
US8716098B1 (en) 2012-03-09 2014-05-06 Crossbar, Inc. Selective removal method and structure of silver in resistive switching device for a non-volatile memory device
US9087576B1 (en) 2012-03-29 2015-07-21 Crossbar, Inc. Low temperature fabrication method for a three-dimensional memory device and structure
US9685608B2 (en) 2012-04-13 2017-06-20 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US8658476B1 (en) 2012-04-20 2014-02-25 Crossbar, Inc. Low temperature P+ polycrystalline silicon material for non-volatile memory device
US8796658B1 (en) 2012-05-07 2014-08-05 Crossbar, Inc. Filamentary based non-volatile resistive memory device and method
US8765566B2 (en) 2012-05-10 2014-07-01 Crossbar, Inc. Line and space architecture for a non-volatile memory device
US9741765B1 (en) 2012-08-14 2017-08-22 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
US9583701B1 (en) 2012-08-14 2017-02-28 Crossbar, Inc. Methods for fabricating resistive memory device switching material using ion implantation
US8946673B1 (en) 2012-08-24 2015-02-03 Crossbar, Inc. Resistive switching device structure with improved data retention for non-volatile memory device and method
US9312483B2 (en) 2012-09-24 2016-04-12 Crossbar, Inc. Electrode structure for a non-volatile memory device and method
US9576616B2 (en) 2012-10-10 2017-02-21 Crossbar, Inc. Non-volatile memory with overwrite capability and low write amplification
US11068620B2 (en) 2012-11-09 2021-07-20 Crossbar, Inc. Secure circuit integrated with memory layer
US8982647B2 (en) 2012-11-14 2015-03-17 Crossbar, Inc. Resistive random access memory equalization and sensing
US9412790B1 (en) 2012-12-04 2016-08-09 Crossbar, Inc. Scalable RRAM device architecture for a non-volatile memory device and method
US9406379B2 (en) 2013-01-03 2016-08-02 Crossbar, Inc. Resistive random access memory with non-linear current-voltage relationship
US9112145B1 (en) 2013-01-31 2015-08-18 Crossbar, Inc. Rectified switching of two-terminal memory via real time filament formation
US9324942B1 (en) 2013-01-31 2016-04-26 Crossbar, Inc. Resistive memory cell with solid state diode
US8934280B1 (en) 2013-02-06 2015-01-13 Crossbar, Inc. Capacitive discharge programming for two-terminal memory cells
US9093635B2 (en) 2013-03-14 2015-07-28 Crossbar, Inc. Controlling on-state current for two-terminal memory
US9484199B2 (en) * 2013-09-06 2016-11-01 Applied Materials, Inc. PECVD microcrystalline silicon germanium (SiGe)
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device
WO2018017216A1 (en) * 2016-07-18 2018-01-25 Applied Materials, Inc. A method and material for cmos contact and barrier layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020022349A1 (en) * 2000-05-23 2002-02-21 Shuichiro Sugiyama Semiconductor thin-film formation process, and amorphous silicon solar-cell device
US20070243338A1 (en) * 2006-04-14 2007-10-18 Aslami Mohd A Plasma deposition apparatus and method for making solar cells
KR20080074883A (en) * 2005-11-10 2008-08-13 쌘디스크 3디 엘엘씨 Vertical diode doped with antimony to avoid or limit dopant diffusion

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH084071B2 (en) * 1985-12-28 1996-01-17 キヤノン株式会社 Deposited film formation method
US5298455A (en) 1991-01-30 1994-03-29 Tdk Corporation Method for producing a non-single crystal semiconductor device
JP3169337B2 (en) * 1995-05-30 2001-05-21 キヤノン株式会社 Photovoltaic element and method for manufacturing the same
US6337224B1 (en) * 1997-11-10 2002-01-08 Kaneka Corporation Method of producing silicon thin-film photoelectric transducer and plasma CVD apparatus used for the method
US6180444B1 (en) * 1998-02-18 2001-01-30 International Business Machines Corporation Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same
JP4358343B2 (en) * 1999-02-26 2009-11-04 株式会社カネカ Manufacturing method of silicon-based thin film photoelectric conversion device
DE10252878A1 (en) 2002-11-12 2004-06-03 X-Fab Semiconductor Foundries Ag Monolithically integrated vertical pin photodiode integrated in BiCMOS technology
US7285464B2 (en) 2002-12-19 2007-10-23 Sandisk 3D Llc Nonvolatile memory cell comprising a reduced height vertical diode
KR20070003784A (en) 2003-12-15 2007-01-05 코닌클리케 필립스 일렉트로닉스 엔.브이. Active matrix pixel device with photo sensor
US7405465B2 (en) * 2004-09-29 2008-07-29 Sandisk 3D Llc Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
US7615502B2 (en) 2005-12-16 2009-11-10 Sandisk 3D Llc Laser anneal of vertically oriented semiconductor structures while maintaining a dopant profile
US7586773B2 (en) * 2007-03-27 2009-09-08 Sandisk 3D Llc Large array of upward pointing p-i-n diodes having large and uniform current
JP2009267261A (en) * 2008-04-28 2009-11-12 Ebatekku:Kk Thin film manufacturing apparatus, thin film manufacturing method, thin film solar cell manufacturing apparatus, and thin film solar cell manufacturing method
US7941004B2 (en) * 2008-04-30 2011-05-10 Nec Laboratories America, Inc. Super resolution using gaussian regression

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020022349A1 (en) * 2000-05-23 2002-02-21 Shuichiro Sugiyama Semiconductor thin-film formation process, and amorphous silicon solar-cell device
KR20080074883A (en) * 2005-11-10 2008-08-13 쌘디스크 3디 엘엘씨 Vertical diode doped with antimony to avoid or limit dopant diffusion
US20070243338A1 (en) * 2006-04-14 2007-10-18 Aslami Mohd A Plasma deposition apparatus and method for making solar cells

Also Published As

Publication number Publication date
JP2013513238A (en) 2013-04-18
KR20120106970A (en) 2012-09-27
WO2011068711A2 (en) 2011-06-09
US8298887B2 (en) 2012-10-30
TWI508181B (en) 2015-11-11
TW201125041A (en) 2011-07-16
CN102640295A (en) 2012-08-15
US20110136327A1 (en) 2011-06-09

Similar Documents

Publication Publication Date Title
WO2011068711A3 (en) High mobility monolithic p-i-n diodes
WO2011044046A3 (en) Improved multichamber split processes for led manufacturing
WO2011090728A3 (en) Low cost solar cells formed using a chalcogenization rate modifier
WO2012143858A3 (en) Thin-film photovoltaic device and fabrication method
WO2011017339A3 (en) Methods of selectively depositing an epitaxial layer
WO2012142439A8 (en) Method and apparatus for ion-assisted atomic layer deposition
GB2498904A (en) Hole injection layers
WO2007024341A3 (en) Method of preparing a film layer-by-layer using plasma enhanced atomic layer deposition
WO2010005573A3 (en) Method and system for producing a solar cell using atmospheric pressure plasma chemical vapor deposition
WO2011106072A3 (en) Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
WO2008102646A1 (en) Process for producing group iii nitride semiconductor light emitting device, group iii nitride semiconductor light emitting device and lamp
WO2010080216A3 (en) Precursor addition to silicon oxide cvd for improved low temperature gapfill
WO2013009552A3 (en) Multi-color light emitting devices with compositionally graded cladding group iii-nitride layers grown on substrates
WO2012142007A3 (en) Extended life textured chamber components and method for fabricating same
SG155840A1 (en) A semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer
WO2014144698A3 (en) Large-area, laterally-grown epitaxial semiconductor layers
CN104659164A (en) Method for growing photoelectric material and device through two-step method
WO2010085439A3 (en) Self-aligned selective emitter formed by counterdoping
WO2012170166A3 (en) Method and system for inline chemical vapor deposition
CN103849841B (en) Sputtering apparatus and method
CN103824899B (en) The implementation method of the low surface concentration emitter of a kind of crystalline silicon
MY159738A (en) Oxygen containing precursors for photovoltaic passivation
WO2012173824A3 (en) Enhanced magnesium incorporation into gallium nitride films through high pressure or ald-type processing
WO2012115519A3 (en) Solar cell and method for manufacturing such a solar cell
WO2010075002A3 (en) Integrated shunt protection diodes for thin-film photovoltaic cells and modules

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080054587.4

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10834959

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2012542086

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20127017252

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 10834959

Country of ref document: EP

Kind code of ref document: A2