WO2011100647A3 - Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing - Google Patents

Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing Download PDF

Info

Publication number
WO2011100647A3
WO2011100647A3 PCT/US2011/024670 US2011024670W WO2011100647A3 WO 2011100647 A3 WO2011100647 A3 WO 2011100647A3 US 2011024670 W US2011024670 W US 2011024670W WO 2011100647 A3 WO2011100647 A3 WO 2011100647A3
Authority
WO
WIPO (PCT)
Prior art keywords
fabrication
double
device manufacturing
photovoltaic cell
semiconductor substrates
Prior art date
Application number
PCT/US2011/024670
Other languages
French (fr)
Other versions
WO2011100647A2 (en
Inventor
Mehrdad M. Moslehi
Karl-Josef Kramer
David Xuan-Qi Wang
Pawan Kapur
Somnath Nag
George Kamian
Jay Ashjaee
Takao Yonehara
Original Assignee
Solexel, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel, Inc. filed Critical Solexel, Inc.
Priority to CN201180018589.2A priority Critical patent/CN102844883B/en
Priority to EP20110742933 priority patent/EP2534700A4/en
Publication of WO2011100647A2 publication Critical patent/WO2011100647A2/en
Publication of WO2011100647A3 publication Critical patent/WO2011100647A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re -usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.
PCT/US2011/024670 2010-02-12 2011-02-12 Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing WO2011100647A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201180018589.2A CN102844883B (en) 2010-02-12 2011-02-12 For the manufacture of the two-sided reusable template of the Semiconductor substrate of photocell and microelectronic component
EP20110742933 EP2534700A4 (en) 2010-02-12 2011-02-12 Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30434010P 2010-02-12 2010-02-12
US61/304,340 2010-02-12

Publications (2)

Publication Number Publication Date
WO2011100647A2 WO2011100647A2 (en) 2011-08-18
WO2011100647A3 true WO2011100647A3 (en) 2012-01-05

Family

ID=44368484

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/024670 WO2011100647A2 (en) 2010-02-12 2011-02-12 Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing

Country Status (4)

Country Link
US (2) US8241940B2 (en)
EP (1) EP2534700A4 (en)
CN (1) CN102844883B (en)
WO (1) WO2011100647A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US8193076B2 (en) 2006-10-09 2012-06-05 Solexel, Inc. Method for releasing a thin semiconductor substrate from a reusable template
US8294026B2 (en) 2008-11-13 2012-10-23 Solexel, Inc. High-efficiency thin-film solar cells
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
US8906218B2 (en) 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
WO2011100647A2 (en) 2010-02-12 2011-08-18 Solexel, Inc. Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing
KR101172178B1 (en) * 2010-09-01 2012-08-07 엘지이노텍 주식회사 Solar cell apparatus and method of fabricating the same
US9748414B2 (en) 2011-05-20 2017-08-29 Arthur R. Zingher Self-activated front surface bias for a solar cell
CN103258716B (en) * 2012-02-16 2016-03-09 财团法人工业技术研究院 Method for producing semiconductor layer with textured surface, method for producing solar cell
KR101372305B1 (en) * 2012-09-21 2014-03-14 영남대학교 산학협력단 Solar cell and the fabrication method thereof
US9012912B2 (en) 2013-03-13 2015-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Wafers, panels, semiconductor devices, and glass treatment methods
US9523158B2 (en) * 2014-02-07 2016-12-20 Applied Materials, Inc. Methods and apparatus for forming semiconductor
US9450007B1 (en) 2015-05-28 2016-09-20 Stmicroelectronics S.R.L. Integrated circuit with reflective material in trenches and related methods
DE102015121636A1 (en) 2015-12-11 2017-06-14 Nexwafe Gmbh Device and method for one-sided etching of a semiconductor layer
US10424441B2 (en) 2017-07-05 2019-09-24 Honeywell International Inc. Ultra-high charge density electrets and method of making same
CN110112256A (en) * 2019-04-29 2019-08-09 国家电投集团西安太阳能电力有限公司 A kind of back contact battery dry method grooving method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02154343A (en) * 1988-12-05 1990-06-13 Ricoh Co Ltd Manufacture of double-sided stamper
US6805966B1 (en) * 2002-06-28 2004-10-19 Seagate Technology Llc Method of manufacturing a dual-sided stamper/imprinter, method of simultaneously forming magnetic transition patterns and dual-sided stamper/imprinter
JP2007224375A (en) * 2006-02-24 2007-09-06 Nuflare Technology Inc Vapor deposition apparatus

Family Cites Families (199)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4082570A (en) 1976-02-09 1978-04-04 Semicon, Inc. High intensity solar energy converter
US4043894A (en) 1976-05-20 1977-08-23 Burroughs Corporation Electrochemical anodization fixture for semiconductor wafers
US4070206A (en) 1976-05-20 1978-01-24 Rca Corporation Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency
US4165252A (en) 1976-08-30 1979-08-21 Burroughs Corporation Method for chemically treating a single side of a workpiece
US4348254A (en) 1978-12-27 1982-09-07 Solarex Corporation Method of making solar cell
US4251679A (en) 1979-03-16 1981-02-17 E-Cel Corporation Electromagnetic radiation transducer
US4249959A (en) 1979-11-28 1981-02-10 Rca Corporation Solar cell construction
US4361950A (en) 1980-03-24 1982-12-07 Exxon Research & Engineering Co. Method of making solar cell with wrap-around electrode
US4427839A (en) 1981-11-09 1984-01-24 General Electric Company Faceted low absorptance solar cell
US4479847A (en) 1981-12-30 1984-10-30 California Institute Of Technology Equilibrium crystal growth from substrate confined liquid
US4409423A (en) 1982-03-09 1983-10-11 The United States Of America As Represented By The Secretary Of The Air Force Hole matrix vertical junction solar cell
US4430519A (en) 1982-05-28 1984-02-07 Amp Incorporated Electron beam welded photovoltaic cell interconnections
US4461922A (en) 1983-02-14 1984-07-24 Atlantic Richfield Company Solar cell module
US4626613A (en) 1983-12-23 1986-12-02 Unisearch Limited Laser grooved solar cell
US4672023A (en) 1985-10-21 1987-06-09 Avantek, Inc. Method for planarizing wafers
DE3537483C1 (en) 1985-10-22 1986-12-04 Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe Process for producing a large number of plate-shaped microstructure bodies made of metal
US5024953A (en) 1988-03-22 1991-06-18 Hitachi, Ltd. Method for producing opto-electric transducing element
US4922277A (en) 1988-11-28 1990-05-01 The United States Of America As Represented By The Secretary Of The Air Force Silicon wafer photoresist developer
US5208068A (en) 1989-04-17 1993-05-04 International Business Machines Corporation Lamination method for coating the sidewall or filling a cavity in a substrate
GB8927709D0 (en) 1989-12-07 1990-02-07 Secretary Of The State For Def Silicon quantum wires
US5073230A (en) 1990-04-17 1991-12-17 Arizona Board Of Regents Acting On Behalf Of Arizona State University Means and methods of lifting and relocating an epitaxial device layer
US5420067A (en) 1990-09-28 1995-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricatring sub-half-micron trenches and holes
US5248621A (en) 1990-10-23 1993-09-28 Canon Kabushiki Kaisha Method for producing solar cell devices of crystalline material
US5112453A (en) 1990-10-31 1992-05-12 Behr Omri M Method and apparatus for producing etched plates for graphic printing
DE4141083A1 (en) 1991-12-13 1993-06-17 Raetz Karlheinz Sawtooth tandem solar cell - has different parts of saw-tooth metallic substrate coated with solar cells for different wavelength ranges
JP3337705B2 (en) 1992-01-23 2002-10-21 キヤノン株式会社 Anodizing apparatus and method
JPH0690014A (en) 1992-07-22 1994-03-29 Mitsubishi Electric Corp Thin solar cell and its production, etching method and automatic etching device, and production of semiconductor device
JP3110178B2 (en) 1992-11-09 2000-11-20 キヤノン株式会社 Method for producing semiconductor substrate and anodizing apparatus
US5458755A (en) 1992-11-09 1995-10-17 Canon Kabushiki Kaisha Anodization apparatus with supporting device for substrate to be treated
US5316593A (en) 1992-11-16 1994-05-31 Midwest Research Institute Heterojunction solar cell with passivated emitter surface
JPH088370B2 (en) 1993-03-05 1996-01-29 株式会社日立製作所 Light confinement structure for solar cells
DE4310206C2 (en) 1993-03-29 1995-03-09 Siemens Ag Method for producing a solar cell from a substrate wafer
US5689603A (en) 1993-07-07 1997-11-18 Huth; Gerald C. Optically interactive nanostructure
JP3398385B2 (en) 1993-07-29 2003-04-21 ヴィレケ・ゲルハルト Method of manufacturing solar cell and solar cell manufactured by this method
US5476578A (en) 1994-01-10 1995-12-19 Electroplating Technologies, Ltd. Apparatus for electroplating
JP2820024B2 (en) * 1994-03-04 1998-11-05 信越半導体株式会社 Method of manufacturing substrate for manufacturing silicon semiconductor element
US5645684A (en) 1994-03-07 1997-07-08 The Regents Of The University Of California Multilayer high vertical aspect ratio thin film structures
US5660680A (en) 1994-03-07 1997-08-26 The Regents Of The University Of California Method for fabrication of high vertical aspect ratio thin film structures
US5538564A (en) 1994-03-18 1996-07-23 Regents Of The University Of California Three dimensional amorphous silicon/microcrystalline silicon solar cells
JP3186482B2 (en) 1994-12-27 2001-07-11 日産自動車株式会社 Method for electrolytic etching of semiconductor substrate
US5899360A (en) 1995-06-09 1999-05-04 Colgate - Palmolive Company Multi-chamber refillable dispenser
US5882988A (en) 1995-08-16 1999-03-16 Philips Electronics North America Corporation Semiconductor chip-making without scribing
CA2232857C (en) 1995-10-05 2003-05-13 Jalal Salami Structure and fabrication process for self-aligned locally deep-diffused emitter (salde) solar cell
US5616185A (en) 1995-10-10 1997-04-01 Hughes Aircraft Company Solar cell with integrated bypass diode and method
US5681392A (en) 1995-12-21 1997-10-28 Xerox Corporation Fluid reservoir containing panels for reducing rate of fluid flow
US5935653A (en) 1996-01-18 1999-08-10 Micron Technology, Inc. Methods for coating a substrate
JPH09255487A (en) * 1996-03-18 1997-09-30 Sony Corp Production of thin film semiconductor
EP0797258B1 (en) 1996-03-18 2011-07-20 Sony Corporation Method for making thin film semiconductor, solar cell, and light emitting diode
US6399143B1 (en) 1996-04-09 2002-06-04 Delsys Pharmaceutical Corporation Method for clamping and electrostatically coating a substrate
US6058945A (en) 1996-05-28 2000-05-09 Canon Kabushiki Kaisha Cleaning methods of porous surface and semiconductor surface
US6091021A (en) 1996-11-01 2000-07-18 Sandia Corporation Silicon cells made by self-aligned selective-emitter plasma-etchback process
AUPO347196A0 (en) 1996-11-06 1996-12-05 Pacific Solar Pty Limited Improved method of forming polycrystalline-silicon films on glass
JP3376258B2 (en) 1996-11-28 2003-02-10 キヤノン株式会社 Anodizing apparatus and related apparatus and method
US6756289B1 (en) 1996-12-27 2004-06-29 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
US20030039843A1 (en) 1997-03-14 2003-02-27 Christopher Johnson Photoactive coating, coated article, and method of making same
US7176111B2 (en) 1997-03-28 2007-02-13 Interuniversitair Microelektronica Centrum (Imec) Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof
DE19715788C1 (en) 1997-04-16 1998-10-08 Eurocopter Deutschland Solar generator for satellites
JP3985065B2 (en) 1997-05-14 2007-10-03 忠弘 大見 Porous silicon substrate forming method and porous silicon substrate forming apparatus
JP3740251B2 (en) 1997-06-09 2006-02-01 キヤノン株式会社 Manufacturing method of solar cell module
JP4473349B2 (en) 1997-06-30 2010-06-02 マクス−プランク−ゲゼルシャフト ツル フォルデルング デル ヴァイセンシャフト エー ファウ Layered structure manufacturing method and semiconductor substrate
US6114046A (en) 1997-07-24 2000-09-05 Evergreen Solar, Inc. Encapsulant material for solar cell module and laminated glass applications
JP3501642B2 (en) 1997-12-26 2004-03-02 キヤノン株式会社 Substrate processing method
JPH11243076A (en) 1998-02-26 1999-09-07 Canon Inc Anodization method and apparatus and manufacture of semiconductor substrate
EP1062689B1 (en) 1998-03-13 2009-09-09 Peter Dr. Fath Solar cell arrangement and method of making a solar cell arrangement
DE19811878C2 (en) 1998-03-18 2002-09-19 Siemens Solar Gmbh Process and etching solution for wet chemical pyramidal texture etching of silicon surfaces
US6126808A (en) 1998-03-23 2000-10-03 Pioneer Metal Finishing Method and apparatus for anodizing objects
US6416647B1 (en) 1998-04-21 2002-07-09 Applied Materials, Inc. Electro-chemical deposition cell for face-up processing of single semiconductor substrates
US6331208B1 (en) 1998-05-15 2001-12-18 Canon Kabushiki Kaisha Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor
AUPP437598A0 (en) 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
JP2000022185A (en) 1998-07-03 2000-01-21 Sharp Corp Solar cell and its manufacture
CN1495915A (en) 1998-07-03 2004-05-12 ������������ʽ���� Photoelectric conversion element
US6096229A (en) 1998-07-30 2000-08-01 Lucent Technologies Inc. Method of making alignment grooves in an optical connector support member
US6197654B1 (en) 1998-08-21 2001-03-06 Texas Instruments Incorporated Lightly positively doped silicon wafer anodization process
CA2246087A1 (en) 1998-08-28 2000-02-28 Northern Telecom Limited Method of cleaving a semiconductor wafer
US6313397B1 (en) * 1998-08-31 2001-11-06 Sharp Kabushiki Kaisha Solar battery cell
EP0996145A3 (en) 1998-09-04 2000-11-08 Canon Kabushiki Kaisha Process for producing semiconductor substrate
EP0989593A3 (en) * 1998-09-25 2002-01-02 Canon Kabushiki Kaisha Substrate separating apparatus and method, and substrate manufacturing method
KR100271772B1 (en) 1998-09-29 2001-02-01 윤종용 Semiconductor Wet Etching Equipment
US6555443B1 (en) 1998-11-11 2003-04-29 Robert Bosch Gmbh Method for production of a thin film and a thin-film solar cell, in particular, on a carrier substrate
US6461932B1 (en) 1998-12-14 2002-10-08 National Semiconductor Corporation Semiconductor trench isolation process that utilizes smoothening layer
EP1024523A1 (en) 1999-01-27 2000-08-02 Imec (Interuniversity Microelectronics Center) VZW Method for fabricating thin film semiconductor devices
JP2000277478A (en) 1999-03-25 2000-10-06 Canon Inc Anodization device and system, substrate processing device and method, and manufcature thereof
US6417069B1 (en) 1999-03-25 2002-07-09 Canon Kabushiki Kaisha Substrate processing method and manufacturing method, and anodizing apparatus
DE19914905A1 (en) 1999-04-01 2000-10-05 Bosch Gmbh Robert Electrochemical etching cell for etching silicon wafers uses electrode materials that do not contaminate and/or damage the etching body after etching
US6881644B2 (en) 1999-04-21 2005-04-19 Silicon Genesis Corporation Smoothing method for cleaved films made using a release layer
JP3619053B2 (en) 1999-05-21 2005-02-09 キヤノン株式会社 Method for manufacturing photoelectric conversion device
US6664169B1 (en) 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
JP2001007362A (en) 1999-06-17 2001-01-12 Canon Inc Semiconductor substrate and manufacture of solar cell
EP1212788B1 (en) 1999-08-26 2014-06-11 Brewer Science Improved fill material for dual damascene processes
US6602767B2 (en) 2000-01-27 2003-08-05 Canon Kabushiki Kaisha Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery
US6964732B2 (en) 2000-03-09 2005-11-15 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for continuous formation and lift-off of porous silicon layers
AU781761B2 (en) 2000-03-09 2005-06-09 Interuniversitair Micro-Elektronica Centrum (Imec) Method for the formation and lift-off of porous silicon layers
US6294725B1 (en) 2000-03-31 2001-09-25 Trw Inc. Wireless solar cell array electrical interconnection scheme
JP2001284622A (en) 2000-03-31 2001-10-12 Canon Inc Method for manufacturing semiconductor member and method for manufacturing solar cell
US6518172B1 (en) 2000-08-29 2003-02-11 Micron Technology, Inc. Method for applying uniform pressurized film across wafer
JP2002184709A (en) 2000-10-02 2002-06-28 Canon Inc Method and device for manufacturing thin semiconductor film
US6551908B2 (en) 2000-10-02 2003-04-22 Canon Kabushiki Kaisha Method for producing semiconductor thin films on moving substrates
US7632434B2 (en) 2000-11-17 2009-12-15 Wayne O. Duescher Abrasive agglomerate coated raised island articles
NL1016779C2 (en) 2000-12-02 2002-06-04 Cornelis Johannes Maria V Rijn Mold, method for manufacturing precision products with the aid of a mold, as well as precision products, in particular microsieves and membrane filters, manufactured with such a mold.
US6602760B2 (en) 2000-12-21 2003-08-05 Interuniversitair Microelektronica Centrum (Imec) Method of producing a semiconductor layer on a substrate
WO2002055760A1 (en) 2001-01-09 2002-07-18 Telephus, Inc. Anodic reactor and reaction unit thereof
JP4903314B2 (en) 2001-03-30 2012-03-28 京セラ株式会社 Thin film crystalline Si solar cell
US6969472B2 (en) 2001-04-19 2005-11-29 Lsi Logic Corporation Method of fabricating sub-micron hemispherical and hemicylidrical structures from non-spherically shaped templates
US6524880B2 (en) 2001-04-23 2003-02-25 Samsung Sdi Co., Ltd. Solar cell and method for fabricating the same
JP2002353423A (en) 2001-05-25 2002-12-06 Canon Inc Separation device and processing method of plate member
JP2003052185A (en) 2001-05-30 2003-02-21 Canon Inc Power converter, and photovoltaic element module using the same and power generator
WO2003037798A1 (en) 2001-10-30 2003-05-08 Catalysts & Chemicals Industries Co., Ltd. Tubular titanium oxide particles, method for preparing the same, and use of the same
US7109517B2 (en) 2001-11-16 2006-09-19 Zaidi Saleem H Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors
JP4873820B2 (en) * 2002-04-01 2012-02-08 株式会社エフティーエル Semiconductor device manufacturing equipment
US6995032B2 (en) 2002-07-19 2006-02-07 Cree, Inc. Trench cut light emitting diodes and methods of fabricating same
JP2004055803A (en) 2002-07-19 2004-02-19 Renesas Technology Corp Semiconductor device
EP1385199A1 (en) 2002-07-24 2004-01-28 IMEC vzw, Interuniversitair Microelectronica Centrum vzw Method for making thin film devices intended for solar cells or SOI application
US20040217005A1 (en) 2002-07-24 2004-11-04 Aron Rosenfeld Method for electroplating bath chemistry control
KR20050032114A (en) 2002-08-06 2005-04-06 아베시아 리미티드 Organic electronic devices
JP3827627B2 (en) 2002-08-13 2006-09-27 株式会社荏原製作所 Plating apparatus and plating method
EP1554035A1 (en) 2002-08-23 2005-07-20 Hartmut Presting Microstructured catalyst body and method for production thereof
KR100465877B1 (en) 2002-08-23 2005-01-13 삼성전자주식회사 Etching apparatus of semiconductor
WO2004038811A1 (en) 2002-10-25 2004-05-06 Nakajima Glass Co., Inc. Solar battery module manufacturing method
JP2004172496A (en) * 2002-11-21 2004-06-17 Tdk Corp Photoelectric converting element and method for manufacturing photoelectric converting element
GB0227902D0 (en) 2002-11-29 2003-01-08 Ingenia Holdings Ltd Template
NL1022155C2 (en) 2002-12-12 2004-06-22 Otb Group Bv Method and device for treating a surface of at least one substrate.
US7312440B2 (en) 2003-01-14 2007-12-25 Georgia Tech Research Corporation Integrated micro fuel processor and flow delivery infrastructure
US7374646B2 (en) 2003-01-31 2008-05-20 Ebara Corporation Electrolytic processing apparatus and substrate processing method
US7402448B2 (en) 2003-01-31 2008-07-22 Bp Corporation North America Inc. Photovoltaic cell and production thereof
US6911379B2 (en) 2003-03-05 2005-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming strained silicon on insulator substrate
US20040175893A1 (en) 2003-03-07 2004-09-09 Applied Materials, Inc. Apparatuses and methods for forming a substantially facet-free epitaxial film
JP4761706B2 (en) 2003-12-25 2011-08-31 京セラ株式会社 Method for manufacturing photoelectric conversion device
JP3982502B2 (en) 2004-01-15 2007-09-26 セイコーエプソン株式会社 Drawing device
EP1560272B1 (en) 2004-01-29 2016-04-27 Panasonic Intellectual Property Management Co., Ltd. Solar cell module
US7335555B2 (en) 2004-02-05 2008-02-26 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
US7144751B2 (en) 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
US20070187257A1 (en) 2004-03-19 2007-08-16 Ebara Corporation Electrolytic processing apparatus and electrolytic processing method
US7244682B2 (en) 2004-05-06 2007-07-17 Micron Technology, Inc. Methods of removing metal-containing materials
US20060021565A1 (en) 2004-07-30 2006-02-02 Aonex Technologies, Inc. GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer
US20060054212A1 (en) 2004-09-10 2006-03-16 Fraas Lewis M Solar photovoltaic mirror modules
JP4464240B2 (en) 2004-10-06 2010-05-19 キヤノン株式会社 Member processing apparatus and processing method
US7309658B2 (en) 2004-11-22 2007-12-18 Intermolecular, Inc. Molecular self-assembly in substrate processing
US8420435B2 (en) 2009-05-05 2013-04-16 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
US8129822B2 (en) 2006-10-09 2012-03-06 Solexel, Inc. Template for three-dimensional thin-film solar cell manufacturing and methods of use
US20120225515A1 (en) 2004-11-30 2012-09-06 Solexel, Inc. Laser doping techniques for high-efficiency crystalline semiconductor solar cells
US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US8637340B2 (en) 2004-11-30 2014-01-28 Solexel, Inc. Patterning of silicon oxide layers using pulsed laser ablation
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
JP4340246B2 (en) 2005-03-07 2009-10-07 シャープ株式会社 Thin film solar cell and manufacturing method thereof
JP4607637B2 (en) * 2005-03-28 2011-01-05 東京エレクトロン株式会社 Silicon nitride film forming method, silicon nitride film forming apparatus and program
US7402523B2 (en) 2005-03-31 2008-07-22 Tokyo Electron Limited Etching method
US20060266916A1 (en) 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
US7349140B2 (en) 2005-05-31 2008-03-25 Miradia Inc. Triple alignment substrate method and structure for packaging devices
US20070095386A1 (en) 2005-06-06 2007-05-03 Solaria Corporation Method and system for integrated solar cell using a plurality of photovoltaic regions
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20070077763A1 (en) 2005-09-30 2007-04-05 Molecular Imprints, Inc. Deposition technique to planarize a multi-layer structure
KR100699348B1 (en) 2005-10-11 2007-03-23 삼성전자주식회사 Photoresist Coating Apparatus and Method for Efficiently Spraying Photoresist Solutions
JP2007297657A (en) 2006-04-28 2007-11-15 Canon Inc Adsorption pat and substrate treatment device
US7786376B2 (en) 2006-08-22 2010-08-31 Solexel, Inc. High efficiency solar cells and manufacturing methods
US8512581B2 (en) 2006-10-09 2013-08-20 Solexel, Inc. Methods for liquid transfer coating of three-dimensional substrates
US8084684B2 (en) 2006-10-09 2011-12-27 Solexel, Inc. Three-dimensional thin-film solar cells
US7745313B2 (en) 2008-05-28 2010-06-29 Solexel, Inc. Substrate release methods and apparatuses
US8853521B2 (en) 2007-10-06 2014-10-07 Solexel, Inc. Truncated pyramid structures for see-through solar cells
US8293558B2 (en) 2006-10-09 2012-10-23 Solexel, Inc. Method for releasing a thin-film substrate
US20080264477A1 (en) 2006-10-09 2008-10-30 Soltaix, Inc. Methods for manufacturing three-dimensional thin-film solar cells
US7999174B2 (en) 2006-10-09 2011-08-16 Solexel, Inc. Solar module structures and assembly methods for three-dimensional thin-film solar cells
US20100304521A1 (en) 2006-10-09 2010-12-02 Solexel, Inc. Shadow Mask Methods For Manufacturing Three-Dimensional Thin-Film Solar Cells
US8193076B2 (en) 2006-10-09 2012-06-05 Solexel, Inc. Method for releasing a thin semiconductor substrate from a reusable template
US8053665B2 (en) 2008-11-26 2011-11-08 Solexel, Inc. Truncated pyramid structures for see-through solar cells
US8937243B2 (en) 2006-10-09 2015-01-20 Solexel, Inc. Structures and methods for high-efficiency pyramidal three-dimensional solar cells
US8035028B2 (en) 2006-10-09 2011-10-11 Solexel, Inc. Pyramidal three-dimensional thin-film solar cells
US20080128641A1 (en) 2006-11-08 2008-06-05 Silicon Genesis Corporation Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
US20080173238A1 (en) * 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel
US7954449B2 (en) 2007-05-08 2011-06-07 Palo Alto Research Center Incorporated Wiring-free, plumbing-free, cooled, vacuum chuck
US20120167819A1 (en) 2007-10-06 2012-07-05 Solexel, Inc. Method for reconstructing a semiconductor template
US9455362B2 (en) 2007-10-06 2016-09-27 Solexel, Inc. Laser irradiation aluminum doping for monocrystalline silicon substrates
US20120125256A1 (en) 2007-10-06 2012-05-24 Solexel, Inc. Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template
US8198528B2 (en) 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
US20090199901A1 (en) 2008-02-08 2009-08-13 Applied Materials, Inc. Photovoltaic device comprising a sputter deposited passivation layer as well as a method and apparatus for producing such a device
WO2009128678A2 (en) 2008-04-17 2009-10-22 Lg Electronics Inc. Solar cell and method of manufacturing the same
US20100144080A1 (en) 2008-06-02 2010-06-10 Solexel, Inc. Method and apparatus to transfer coat uneven surface
US8294026B2 (en) 2008-11-13 2012-10-23 Solexel, Inc. High-efficiency thin-film solar cells
US8288195B2 (en) 2008-11-13 2012-10-16 Solexel, Inc. Method for fabricating a three-dimensional thin-film semiconductor substrate from a template
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
MY170119A (en) 2009-01-15 2019-07-05 Trutag Tech Inc Porous silicon electro-etching system and method
US9890465B2 (en) 2009-01-15 2018-02-13 Trutag Technologies, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
US8906218B2 (en) 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
MY162405A (en) 2009-02-06 2017-06-15 Solexel Inc Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template
US8828517B2 (en) 2009-03-23 2014-09-09 Solexel, Inc. Structure and method for improving solar cell efficiency and mechanical strength
US8656860B2 (en) 2009-04-14 2014-02-25 Solexel, Inc. High efficiency epitaxial chemical vapor deposition (CVD) reactor
US9099584B2 (en) 2009-04-24 2015-08-04 Solexel, Inc. Integrated three-dimensional and planar metallization structure for thin film solar cells
WO2010129719A1 (en) 2009-05-05 2010-11-11 Solexel, Inc. High-productivity porous semiconductor manufacturing equipment
US8445314B2 (en) 2009-05-22 2013-05-21 Solexel, Inc. Method of creating reusable template for detachable thin film substrate
US8551866B2 (en) 2009-05-29 2013-10-08 Solexel, Inc. Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing
WO2011100647A2 (en) 2010-02-12 2011-08-18 Solexel, Inc. Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing
KR101381305B1 (en) 2010-04-23 2014-04-07 솔렉셀, 인크. Passivation methods and apparatus for achieving ultra-low surface recombination velocities for high-efficiency solar cells
US9870937B2 (en) 2010-06-09 2018-01-16 Ob Realty, Llc High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space
EP2601687A4 (en) 2010-08-05 2018-03-07 Solexel, Inc. Backplane reinforcement and interconnects for solar cells
EP2619790B1 (en) 2010-09-24 2018-03-28 Solexel, Inc. High-throughput batch porous silicon manufacturing equipment design and processing methods
KR20140061287A (en) 2010-11-03 2014-05-21 솔렉셀, 인크. Apparatus and methods for uniformly forming porous semiconductor on a substrate
US8992746B2 (en) 2010-12-02 2015-03-31 Dainippon Screen Mfg. Co., Ltd. Anodizing apparatus
WO2012099700A1 (en) 2010-12-31 2012-07-26 Solexel, Inc. Deposition systems and processes
US8882972B2 (en) 2011-07-19 2014-11-11 Ecolab Usa Inc Support of ion exchange membranes
JP5908266B2 (en) 2011-11-30 2016-04-26 株式会社Ｓｃｒｅｅｎホールディングス Anodizing apparatus, anodizing system including the same, and semiconductor wafer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02154343A (en) * 1988-12-05 1990-06-13 Ricoh Co Ltd Manufacture of double-sided stamper
US6805966B1 (en) * 2002-06-28 2004-10-19 Seagate Technology Llc Method of manufacturing a dual-sided stamper/imprinter, method of simultaneously forming magnetic transition patterns and dual-sided stamper/imprinter
JP2007224375A (en) * 2006-02-24 2007-09-06 Nuflare Technology Inc Vapor deposition apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2534700A4 *

Also Published As

Publication number Publication date
US8241940B2 (en) 2012-08-14
EP2534700A2 (en) 2012-12-19
EP2534700A4 (en) 2015-04-29
WO2011100647A2 (en) 2011-08-18
US20110256654A1 (en) 2011-10-20
US9401276B2 (en) 2016-07-26
CN102844883A (en) 2012-12-26
CN102844883B (en) 2016-01-20
US20130171808A1 (en) 2013-07-04

Similar Documents

Publication Publication Date Title
WO2011100647A3 (en) Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing
EP2381018A4 (en) Compound semiconductor substrate, semiconductor device, and process for producing the semiconductor device
EP2238610A4 (en) Method of etching asymmetric wafer, solar cell including the asymmetrically etched wafer, and method of manufacturing the same
EP2301906A4 (en) Silicon nitride board, method for manufacturing the silicon nitride board, and silicon nitride circuit board and semiconductor module using the silicon nitride board
EP2051304A4 (en) Semiconductor substrate, method for forming electrode, and method for manufacturing solar cell
WO2012166974A3 (en) Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
EP2077577A4 (en) Silicon structure with opening having high aspect ratio, method for manufacturing the silicon structure, apparatus for manufacturing the silicon structure, program for manufacturing the silicon structure, and method for manufacturing etching mask for the silicon structure
EP2175516A4 (en) Coloring matter-sensitized photoelectric conversion element, process for producing the coloring matter-sensitized photoelectric conversion element, electronic equipment, semiconductor electrode, and process for rpoducing the semiconductor electrode
EP2615634A4 (en) Method for cleaning silicon substrate, and method for producing solar cell
GB2484605B (en) Silicon wafer based structure for heterostructure solar cells
EP2392549A4 (en) Glass substrate for semiconductor device member, and process for producing glass substrate for semiconductor device member
EP2432000A4 (en) Silicon carbide substrate, semiconductor device, and method for manufacturing silicon carbide substrate
WO2012154498A3 (en) Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications
HK1147140A1 (en) Process for producing substrate for power module, substrate for power module, and power module
EP2017375A4 (en) Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device
HK1144235A1 (en) Method for picking up semiconductor chips from a wafer table and mounting the removed semiconductor chips on a substrate
EP2377839A4 (en) Silicon nitride substrate manufacturing method, silicon nitride substrate, silicon nitride circuit substrate, and semiconductor module
WO2007103887A3 (en) Semiconductor manufacturing process modules
WO2012169866A3 (en) Printed circuit board and method for manufacturing the same
BRPI0822196A2 (en) Methods for manufacturing a solar cell from a silicon wafer and flat panel, solar cell, and solar panel displays
EP2461379A4 (en) Led equipment purpose wafer, method for manufacturing same, and led-equipped structure using led equipment purpose wafer
WO2013184731A3 (en) Self-ballasted, roof-integrated, lightweight frc pv mounting system
EP2648234A4 (en) Light receiving element, semiconductor epitaxial wafer, method for manufacturing the light receiving element and the semiconductor epitaxial wafer, and detecting apparatus
WO2010022849A3 (en) Edge delamination of thin-layer solar modules by means of etching
EP2728624A4 (en) Semiconductor substrate, manufacturing method therefor, solar-cell element, and solar cell

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180018589.2

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11742933

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2011742933

Country of ref document: EP