WO2012083689A1 - Digital-to-analog unit circuit and digital-to-analog converter - Google Patents

Digital-to-analog unit circuit and digital-to-analog converter Download PDF

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Publication number
WO2012083689A1
WO2012083689A1 PCT/CN2011/077525 CN2011077525W WO2012083689A1 WO 2012083689 A1 WO2012083689 A1 WO 2012083689A1 CN 2011077525 W CN2011077525 W CN 2011077525W WO 2012083689 A1 WO2012083689 A1 WO 2012083689A1
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Prior art keywords
mosfet
digital
input
control signal
output
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PCT/CN2011/077525
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French (fr)
Chinese (zh)
Inventor
郭书苞
雷工
李定
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华为技术有限公司
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Priority to CN201180001109.1A priority Critical patent/CN102388537B/en
Priority to PCT/CN2011/077525 priority patent/WO2012083689A1/en
Publication of WO2012083689A1 publication Critical patent/WO2012083689A1/en

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/0617Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence
    • H03M1/0675Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy
    • H03M1/0678Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components
    • H03M1/068Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components the original and additional components or elements being complementary to each other, e.g. CMOS
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66Digital/analogue converters
    • H03M1/74Simultaneous conversion
    • H03M1/742Simultaneous conversion using current sources as quantisation value generators

Definitions

  • Embodiments of the present invention relate to the field of electronic technologies, and in particular, to a digital-to-analog conversion unit circuit and a digital-to-analog converter. Background technique
  • DAC Digital-to-Analog Converter
  • CMOS complementary metal oxide semiconductor
  • DCOffset DC offset
  • A dynamic weighted average
  • Embodiments of the present invention provide a digital-to-analog conversion unit circuit and a digital-to-analog converter for solving the existing In the technology, the DC offset of the output positive terminal and the output negative terminal in the DWA mode causes a problem of the second harmonic.
  • an embodiment of the present invention provides a digital to analog conversion unit circuit, including:
  • the digital to analog conversion branch includes a current source, a first metal oxide semiconductor field effect transistor MOSFET and a second MOSFET, the current source being respectively connected to the first MOSFET, the source of the second MOSFET through a first summing point
  • the drains of the first MOSFET and the second MOSFET are respectively connected to the output positive terminal and the output negative terminal, and the gates of the first MOSFET and the second MOSFET are respectively connected to the first input terminal and the second input terminal;
  • the redundant branch includes a second summing point in a high resistance state, a third MOSFET and a fourth MOSFET, and the second summing point is respectively connected to sources of the third MOSFET and the fourth MOSFET,
  • the drains of the third MOSFET and the fourth MOSFET are respectively connected to the output positive terminal and the output negative terminal, and the gates of the third MOSFET and the fourth MOSFET are respectively connected to the third input terminal and the fourth input terminal;
  • the MOSFET, the second MOSFET, the third MOSFET, and the fourth MOSFET are negative polarity (N-type) MOSFETs of the same parameter, and the third control signal input by the third input terminal and the first control signal input by the first input terminal
  • the fourth control signal input by the fourth input terminal and the second control signal input by the second input terminal are mutually redundant.
  • an embodiment of the present invention provides a digital to analog converter, including:
  • At least one digital-to-analog conversion unit circuit the digital-to-analog conversion unit circuit is a circuit as described above; a switch driving unit, the input end of the switch driving unit inputs a digital signal to be converted, and the output end of the switch driving unit is connected a first input end, a second input end, a third input end, and a fourth input end of the at least one digital to analog conversion unit.
  • the embodiment of the invention adopts a redundant branch similar to the digital-to-analog conversion branch structure in the digital-to-analog conversion unit circuit, and the control signals of the redundant branch and the control signals of the digital-to-analog conversion branch are mutually redundant.
  • the same charge transfer is performed for each preset period, and the second harmonic caused by the DC offset of 0UTP and OUTN is converted into high frequency noise, so that harmonics are not seen in the output signal bandwidth, and the output is improved.
  • the quality of the signal is DRAWINGS
  • FIG. 1 is a schematic diagram of a circuit for adding a feedback loop in a current steering type DAC in the prior art.
  • FIG. 2 is a schematic circuit diagram of Embodiment 1 of a digital-to-analog conversion unit circuit according to an embodiment of the present invention.
  • FIG. 3 is a timing diagram of a clock signal and each control signal in the embodiment shown in FIG.
  • FIG. 4 is a schematic circuit diagram of Embodiment 2 of a digital-to-analog conversion unit circuit according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of a schematic diagram of an embodiment of a digital to analog converter according to an embodiment of the present invention. detailed description
  • the current steering type DAC includes a pair of metal-oxide-semiconductor field-effect transistor (MOSFET) differential pair tubes, and the differential pair tube is controlled by converting the input digital signal into a switch control signal. , the current of the summing point can be directed to OUTP or OUTN, and OUTP and OUTN are connected to the resistor. The array converts the output current into a voltage to form an analog signal for the output.
  • MOSFET metal-oxide-semiconductor field-effect transistor
  • the current rudder type DAC has a disadvantage that the drain voltage of the current source unit, that is, the summing point voltage, changes with the switching of the switch, and the change value is related to the OUTP and OUTN voltage difference of the current rudder output.
  • the change of the sum point voltage causes the node capacitance of the summing point to charge and discharge.
  • the switch is switched, the charge on the node capacitor is transferred from one end of the current steering unit to the other end of the output (charge transfer).
  • harmonics are generated and the output signal is degraded.
  • FIG. 1 is a schematic diagram of a circuit for adding a feedback loop in a current steering type DAC in the prior art.
  • the circuit consists of two sets of feedback control circuits, such as the 230 ⁇ and 230 ⁇ modules in Figure 1, to reduce the voltage change of the summing node (ie, S fSN ) due to the voltage change at the output, Figure 1
  • the 230P module includes an operational amplifier 240P, M0S tubes M5P and M6P, current sources 242P and 244P; M5P is a diode connection method that provides a stable reference voltage for the positive terminal of 240P; the source of the M6P tube is connected to 240P Negative terminal, since the drain of M6P is connected to the positive terminal OUTP of the output, the negative terminal voltage of 240P has a certain linear relationship with the 0UTP voltage, thus forming a negative feedback system; the 240P output voltage controls the substrate of M6P, thereby changing The threshold voltage of M6P, so that the source voltage of M6P becomes more stable.
  • the source voltage of M6P is substantially unchanged by changing the threshold voltage of M6P; the output of 240P is simultaneously coupled to the switching transistors ⁇ 3 ⁇ 3 ⁇ of each differential unit, so the source voltage of ⁇ 3 ⁇ 3 ⁇ remains substantially unchanged through the feedback control logic.
  • the 230N module includes an operational amplifier 240N, MOSFETs M5N and M6N, current sources 242N and 244N, and the source voltage of the M41-M4N is held constant by feedback control logic.
  • D1_DN, D8 TD8N is a control signal for controlling the gate of the M0S tube in each DAC unit by converting the output digital signal through the switch driving unit, wherein the two control signals of each DAC unit are "non-" relationship , such as D1 and D81, DN and D8N.
  • the above scheme can make the signal changes of 0UP and OUTN not coupled to the summing point through the feedback loop, thereby reducing the third harmonic; however, when the 0UTP and the OUTN voltage have a DC offset, the deviation is coupled to the summing point. In the mode of A, the deviation will cause a larger second harmonic; The operational amplifier itself also introduces deviations and deteriorates the output signal; and the above scheme is not suitable for the R&S switch, because the substrates of the conventional process are all Psub, which cannot be controlled separately; in addition, the added operational amplifier pair Larger bandwidth requirements will increase the power consumption of the circuit.
  • each DAC unit used is not repeated. For example, if there are eight DAC units, the first input code is 2, and the first and second of the dac cell array are turned on. Unit; the next input code is 3, open the 3rd, 4th, and 5th units, the first and second units are turned off; during the positive half cycle of the input signal, the DAC unit will be repeated according to the input code, such as the input code. When it is 6 and 7, there are 5 DAC units that are repeated, that is, remain open.
  • a major type of pattern-related error is the charge transfer due to the parasitic capacitance charge and discharge at the drain of the current source.
  • the current source is connected to the differential pair of nodes S 1 with parasitic capacitance. If the node voltage changes, it will charge and discharge to 0UTP or OUTN. For example, if the DC offset of the 0UTP and OUTN voltages makes 0UTP>0UTN, then 0UTP is charged to S1 when D1 transitions from low to high, and S1 is discharged to 0UTN when D81 transitions from low to high.
  • the embodiment of the present invention has the same circuit as the existing DAC unit, so that each preset cycle has the same charge transfer, so that the charge transfer error is independent of the frequency of the input signal, that is, through each The preset charge is injected with the same charge energy, and the original harmonic can be converted into high-frequency noise. This part of the noise can be filtered by the post-stage filter to obtain a high-performance output signal.
  • FIG. 2 is a schematic circuit diagram of Embodiment 1 of a digital-to-analog conversion unit circuit according to an embodiment of the present invention. As shown in FIG. 2, this embodiment includes:
  • the digital-to-analog conversion branch 21 includes a current source 211, a first MOSFET 212, and a second MOSFET 213.
  • the current source 211 is connected to the source of the first MOSFET 212, the second MOSFET 213, the first MOSFET 212, and the second MOSFET 213 through the first summing point 214, respectively.
  • the drains are connected to the first input terminal inpl and the second input terminal inp2, respectively, connecting the gates of the first MOSFET 212 and the second MOSFET 213;
  • the redundancy branch 22 includes a second summing point 221 in a high resistance state, a third MOSFET 222 and a fourth MOSFET 223.
  • the second summing point is respectively connected to the third MOSFET 222 , the source of the fourth MOSFE, and the third MOSFET 222 .
  • the drains of the fourth MOSFET 22 3 are respectively connected to the OUTP, 0UTN, and the gates of the third MOSFET 222 and the fourth MOSFET 22 3 are respectively connected to the third input terminal inp3 and the fourth input terminal inp 4 ;
  • the first MOSFET 212, the second MOSFET 213, the third MOSFET 222, and the fourth MOSFET 223 are N-type MOSFETs having the same parameter, and the third control signal p_duml input by the third input terminal inp3 and the first control signal pi input by the first input terminal inpl are Redundantly, the fourth control signal n_duml input by the fourth input terminal inp4 and the second control signal n1 input by the second input terminal inp2 are mutually redundant.
  • the current source 211 in this embodiment can be implemented by any current source in the prior art, such as the current sources of AVDD, Mi l and M21 shown in FIG. 1 , which is not limited in this embodiment.
  • the first control signal pi and the second control signal n1 may be complementary as in the prior art, that is, a relationship of "Non" to each other, that is, when pl is at a high level, nl is at a level of C, and vice versa. The same is true for the relationship between the third control signal p-duml and the fourth control signal n_duml.
  • the second summing point 221 in the high resistance state can be implemented by a method in the prior art, such as connecting the second summing point 221 to the drain of the fifth MOSFET, and the source and the gate of the fifth MOSFET are grounded.
  • the fifth MOSFET is a positive (P-type) MOSFET, which is not limited in this embodiment.
  • the third control signal P-duml input by the third input terminal inp 3 and the first control signal pl input by the first input terminal inpl are mutually redundant, meaning that the third control signal p-ckiml and each preset period
  • the sum of the number of times of the same level jump of the first control signal pl is equal to 1, that is, there is a same level jump of pl or p-ckiml in each preset period, that is, each preset period
  • a sum of the third control signal and the first control signal from a low to a high level transition is equal to 1, or the third control signal and the first control signal are jumped from a high to a low level
  • the sum of the variables is equal to 1;
  • the fourth input is inp4 input
  • the redundancy between the fourth control signal n_duml and the second control signal n1 input by the second input terminal inp2 means that, in each preset period, the fourth control signal n_duml and the second control signal n1 are in the same level jump.
  • the sum of the number of times is equal to 1, that is, there is a 111 or 11_ (1 let 1 of the same level jump in each preset period, that is, the fourth control signal and the said
  • the sum of the number of level transitions of the second control signal from low to high is equal to 1 or the sum of the number of level transitions of the fourth control signal and the second control signal from high to low is equal to one.
  • the first MOSFET 212, the second MOSFET 213, the third MOSFET 222, and the fourth MOSFET 223 have the same parameters such that the capacitance of the parasitic capacitance of the first summing point 214 in the digital-to-analog conversion branch 21 and the second summing point in the redundant branch 22 The capacitance of the parasitic capacitance of 221 is equal.
  • the absolute value of the voltage change of each preset period pi or p-duml is AV, correspondingly, each preset
  • the absolute value of the voltage change of the period 111 or 11_(1111111 is also AV, and the amount of charge transferred from the 0UTP through the first summing point 114 or the second summing point 221 to the OUTN for each preset period is C*?V Or, the amount of charge transferred from 0UTN through the first summing point 214 or the second summing point 221 to the 0UTP for each preset period is C* ⁇ V.
  • the preset period here can be preferably set to 2 times the clock period.
  • the control signal jump can be realized without strictly following the preset period.
  • the specific timing of the clock signal and each control signal can be as shown in FIG. 3, where CLK is a clock signal, and pi and nl are control digital-to-analog conversion branches 21
  • CLK is a clock signal
  • pi and nl are control digital-to-analog conversion branches 21
  • the switching signal of the M0SFET, P-dumWmi_duml is the switching signal of the MOSFET controlling the redundant branch 22, and a charge transfer occurs whenever the switching signal is switched from low to high or high to low.
  • the p_duml and the pi signal form a mutually redundant relationship: that is, as long as the digital-to-analog conversion branch 21 has no charge transferred to the OUTP or the OUTN, the redundant branch 22 transfers the charge to the 0UTP or the OUTN.
  • the charge transfer energy generated by the timing shown in Figure 3 is mainly concentrated at approximately Fs/2, where Fs is the clock frequency, which is the sampling frequency; this part of the energy can be filtered by the post-stage low-pass filter.
  • the embodiment of the invention adopts a redundant branch similar to the digital-to-analog conversion branch structure in the digital-to-analog conversion unit circuit, and the control signals of the redundant branch and the control signals of the digital-to-analog conversion branch are mutually redundant. So that each preset cycle has the same charge transfer, which will result in the DC offset of 0UTP and OUTN.
  • the subharmonic is converted to high frequency noise, so that harmonics are not seen in the output signal bandwidth, improving the quality of the output signal.
  • FIG. 4 is a schematic circuit diagram of Embodiment 2 of a digital-to-analog conversion unit circuit according to an embodiment of the present invention. As shown in FIG. 4, the embodiment includes:
  • the digital-to-analog conversion branch 41 includes a current source 411, a first MOSFET 412, and a second MOSFET 4113.
  • the current source 41 1 is connected to the source of the first MOSFET 412 and the second MOSFET 41 through the first summing point 414, respectively, the first MOSFET 412,
  • the drains of the second MOSFETs 41 are connected to the first input terminal inpl and the second input terminal inp2, respectively.
  • the gates of the first MOSFETs 412 and the second MOSFETs are connected to the first input terminal inpl and the second input terminal inp2;
  • the digital-to-analog conversion branch 41 further includes: a current sink 431, a sixth MOSFET 432, and a seventh MOSFET 433.
  • the current sink 431 is connected to the source of the sixth MOSFET 432, the seventh MOSFET 433, the sixth MOSFET 432, and the seventh MOSFET 433 through the third summing point 434, respectively.
  • the drains are respectively connected to the 0TPP, 0UTN, and the sixth MOSFET 432, and the gates of the seventh MOSFET 433 are respectively connected to the second input terminal inp2 and the first input terminal inpl;
  • the redundancy branch 42 includes a second summing point 421 in a high resistance state, a third MOSFET 422 and a fourth MOSFET 423 , and the second summing point 1 is connected to the sources of the third MOSFET 422 and the fourth MOSFET 42 3, respectively.
  • the drains of the MOSFETs 422 and the fourth MOSFETs 42 are respectively connected to the OUTP, 0UTN, and the gates of the third MOSFET 422 and the fourth MOSFET 42 are respectively connected to the third input terminal inp3 and the fourth input terminal inp 4 ;
  • the redundancy branch 42 further includes: an eighth MOSFET 441, a ninth MOSFET 442, and a tenth MOSFET 443.
  • the eighth MOSFET 441 is connected to the ninth MOSFET442, the source of the tenth MOSFET 443, the ninth MOSFET442, and the tenth MOSFET 443 through the fourth summing point 444, respectively.
  • the drains are respectively connected to the first input terminal inp4 and the third input terminal inp3, respectively, connecting the 0UTP, 0UTN, and the ninth MOSFET 442, and the gate of the tenth MOSFET 443;
  • the first MOSFET 412, the second MOSFET 41, the third MOSFET 422, and the fourth MOSFET 423 are N-type MOSFETs of the same parameter, and the third control signal p_duml input by the third input terminal inp3 is mutually coupled with the first control signal pi input by the first input terminal inpl.
  • the fourth control signal input to the fourth input terminal inp4 The number n_duml and the second control signal n1 input by the second input terminal inp2 are mutually redundant;
  • the sixth MOSFET 432, the seventh MOSFET 433, the ninth MOSFET 442, and the tenth MOSFET 443 are N-type MOSFETs having the same parameters, and the eighth MOSFET is an N-type MOSFET.
  • the current sink 431 can be implemented by any current sink in the prior art, for example, by an N-type MOSFET.
  • a third summing point 434 can be connected to the drain of the N-type MOSFET, and the source of the N-type MOSFET. Grounding, the gate is connected to a bias voltage, which is not limited in this embodiment.
  • the digital-to-analog conversion branch and the redundant branch symmetrically add circuits similar to those shown in FIG. 2, forming a fully differential digital-to-analog conversion branch. Roads and redundant branches can increase the amplitude of the output signal.
  • the case of charge transfer in this embodiment is similar to that of the first embodiment shown in FIG. 2, except that the amount of charge transfer of the added partial circuit is superimposed with the charge transfer amount of the first embodiment, and details are not described herein again.
  • FIG. 5 is a schematic diagram of a schematic diagram of an embodiment of a digital to analog converter according to an embodiment of the present invention. As shown in FIG. 5, the digital-to-analog converter includes:
  • At least one digital-to-analog conversion unit circuit 50f 50N, the digital-to-analog conversion unit circuit 50 ⁇ 50 ⁇ is a circuit of the digital-to-analog conversion unit circuit embodiment 1 or the second embodiment provided by the embodiment of the invention;
  • the input end of the switch drive unit 51 inputs the digital signal to be converted, and the output end of the switch drive unit 51 is connected to the first input end of the at least one digital-to-analog conversion unit 50f 50N, the second input end inp 2 , and the third Input end inp3, fourth input end inp 4 .
  • the switch driving unit 51 outputs a switching signal for controlling the MOSFET in each of the digital-to-analog conversion units 50f to 50N according to the digital signal to be converted, for example, outputting to each of the digital-to-analog conversion units as shown in FIG. Pi, nl, p-dum n-duml.
  • the digital-to-analog converter further includes a resistor array 52.
  • the input end of the resistor array 52 is connected to the OUTP and the OUTN of the at least one digital-to-analog conversion unit 50f 50N, and the output of the resistor array 52 is output.
  • the resistor array here can be implemented by a method in the prior art, as long as the current output from the digital-to-analog conversion unit circuit 50 ⁇ 50 ⁇ can be converted into a corresponding electric current. It can be pressed, and this embodiment does not limit this.
  • the digital to analog converter further includes a filter 53 coupled to the output of the resistor array 52.
  • the filter 53 is used to filter out high frequency noise generated by charge transfer in each of the digital to analog conversion units 50 ⁇ 50 ⁇ .
  • a redundant branch similar to the digital-to-analog conversion branch structure is added in the digital-to-analog conversion unit circuit, and the control signals of the redundant branch and the control signals of the digital-to-analog conversion branch are redundant with each other, so that each Each preset cycle has the same charge transfer, and the second harmonic caused by the DC offset of 0UTP and OUTN is converted into high frequency noise, so that harmonics are not seen in the output signal bandwidth, and the quality of the output signal is improved. Further, the high frequency noise can also be filtered by a filter to finally obtain a high performance output signal.

Abstract

A digital-to-analog unit circuit and a digital-to-analog converter are provided. A redundant branch similar to the structure of the digital-to-analog branch is added in the digital-to-analog unit circuit. The control signal of the redundant branch is redundant to the control signal of the digital-to-analog branch reciprocally, which makes the same charge is transferred in each default period. The second harmonic led by the DC bias of OUTP and OUTN is changed to the high frequency noise. Therefore the harmonic is disappeared in the input signal bandwidth, and the quality of the output signal is improved.

Description

数模转换单元电路及数模转换器 技术领域  Digital-to-analog conversion unit circuit and digital-to-analog converter
本发明实施例涉及电子技术领域, 尤其是一种数模转换单元电路及数模 转换器。 背景技术  Embodiments of the present invention relate to the field of electronic technologies, and in particular, to a digital-to-analog conversion unit circuit and a digital-to-analog converter. Background technique
随着通讯市场的迅猛发展, 集成电路中数字和模拟界面间的模块变的越 来越重要。 在视频及无线领域的应用中, 数模转换器(Digital-to-Analog Converter, 简称 DAC )需要具有高速高精度。 电流舵型( current steer ing ) DAC被广泛的应用于集成电路当中, current steering结构具有快速、 高精 度及易于互为冗余金属氧化物半导体 ( Complementary Metal Oxide Semiconductor, 简称 CMOS ) 电流集成的优点。 当 DAC精度高于 12位时通常 需要校准电路, 基于动态元件匹配 ( Dynamic Element Matching, 简称 DEM) 技术的校准电路可以较好的解决电流单元之间的匹配而导致的谐波问题。 但 DEM技术无法克服开关引进的与码型相关的误差, 而这些会导致三次谐波的 产生。  With the rapid development of the communications market, modules between digital and analog interfaces in integrated circuits are becoming more and more important. In video and wireless applications, Digital-to-Analog Converter (DAC) requires high-speed and high-precision. Current steer DACs are widely used in integrated circuits. The current steering structure has the advantages of fast, high-precision, and easy-to-complementary complementary metal oxide semiconductor (CMOS) current integration. When the DAC accuracy is higher than 12 bits, the calibration circuit is usually needed. The calibration circuit based on Dynamic Element Matching (DEM) technology can better solve the harmonic problem caused by the matching between the current units. However, DEM technology cannot overcome the pattern-related errors introduced by the switch, and these will lead to the generation of the third harmonic.
现有技术中存在一种改进方案, 通过反馈回路使得 current steering的 输出端, 即输出正端 (0UTP)和输出负端 (0UTN) 的信号变化不会耦合到加 和点, 从而降低三次谐波。  There is an improvement in the prior art, through the feedback loop, the signal change of the output of the current steering, that is, the output positive terminal (0UTP) and the output negative terminal (OUTN) is not coupled to the summing point, thereby reducing the third harmonic. .
但是, 当 0UTP和 0UTN电压间存在直流偏差 (DCOffset) 时, 该直流偏 差会耦合到加和点, 尤其是在 DEM 的动态加权平均 (Dynamic Weighted Average, 简称而 A)模式下该直流偏差会引起较大的二次谐波。 发明内容  However, when there is a DC offset (DCOffset) between the 0UTP and the OUTN voltage, the DC offset is coupled to the summing point, especially in the dynamic weighted average (A) mode of the DEM. Larger second harmonic. Summary of the invention
本发明实施例提供一种数模转换单元电路及数模转换器, 用以解决现有 技术中 DWA模式下输出正端和输出负端的直流偏差导致二次谐波的问题。 一方面, 本发明实施例提供了一种数模转换单元电路, 包括: Embodiments of the present invention provide a digital-to-analog conversion unit circuit and a digital-to-analog converter for solving the existing In the technology, the DC offset of the output positive terminal and the output negative terminal in the DWA mode causes a problem of the second harmonic. In one aspect, an embodiment of the present invention provides a digital to analog conversion unit circuit, including:
数模转换支路和冗余支路;  Digital to analog conversion branch and redundant branch;
所述数模转换支路包括电流源、 第一金属氧化物半导体场效应晶体管 M0SFET 和第二 M0SFET , 所述电流源通过第一加和点分别连接所述第一 M0SFET , 第二 M0SFET的源极, 所述第一 M0SFET、 第二 M0SFET的漏极分别连 接输出正端、 输出负端, 所述第一 M0SFET、 第二 M0SFET的栅极分别连接第 一输入端、 第二输入端;  The digital to analog conversion branch includes a current source, a first metal oxide semiconductor field effect transistor MOSFET and a second MOSFET, the current source being respectively connected to the first MOSFET, the source of the second MOSFET through a first summing point The drains of the first MOSFET and the second MOSFET are respectively connected to the output positive terminal and the output negative terminal, and the gates of the first MOSFET and the second MOSFET are respectively connected to the first input terminal and the second input terminal;
所述冗余支路包括处于高阻态的第二加和点、 第三 M0SFET 和第四 M0SFET , 所述第二加和点分别连接所述第三 M0SFET、 第四 M0SFET的源极, 所述第三 M0SFET、 第四 M0SFET的漏极分别连接所述输出正端、 输出负端, 所述第三 M0SFET、 第四 M0SFET的栅极分别连接第三输入端、 第四输入端; 所述第一 M0SFET、 第二 M0SFET、 第三 M0SFET和第四 M0SFET为参数相同 的负极性(N 型) M0SFET , 所述第三输入端输入的第三控制信号与所述第一 输入端输入的第一控制信号互为冗余, 所述第四输入端输入的第四控制信号 与所述第二输入端输入的第二控制信号互为冗余。  The redundant branch includes a second summing point in a high resistance state, a third MOSFET and a fourth MOSFET, and the second summing point is respectively connected to sources of the third MOSFET and the fourth MOSFET, The drains of the third MOSFET and the fourth MOSFET are respectively connected to the output positive terminal and the output negative terminal, and the gates of the third MOSFET and the fourth MOSFET are respectively connected to the third input terminal and the fourth input terminal; The MOSFET, the second MOSFET, the third MOSFET, and the fourth MOSFET are negative polarity (N-type) MOSFETs of the same parameter, and the third control signal input by the third input terminal and the first control signal input by the first input terminal The fourth control signal input by the fourth input terminal and the second control signal input by the second input terminal are mutually redundant.
另一方面, 本发明实施例提供了一种数模转换器, 包括:  In another aspect, an embodiment of the present invention provides a digital to analog converter, including:
至少一个数模转换单元电路,所述数模转换单元电路为如上所述的电路; 开关驱动单元, 所述开关驱动单元的输入端输入待转换的数字信号, 所 述开关驱动单元的输出端连接所述至少一个数模转换单元的第一输入端、 第 二输入端、 第三输入端、 第四输入端。  At least one digital-to-analog conversion unit circuit, the digital-to-analog conversion unit circuit is a circuit as described above; a switch driving unit, the input end of the switch driving unit inputs a digital signal to be converted, and the output end of the switch driving unit is connected a first input end, a second input end, a third input end, and a fourth input end of the at least one digital to analog conversion unit.
以上技术方案中的一个技术方案具有如下优点或有益效果:  One of the above technical solutions has the following advantages or benefits:
本发明实施例采用了在数模转换单元电路中增加与数模转换支路结构类 似的冗余支路,且冗余支路的控制信号与数模转换支路的控制信号互为冗余, 使得每个预设周期都有相同的电荷转移, 将 0UTP和 0UTN的直流偏差导致的 二次谐波转变为高频噪声, 从而在输出信号带宽内看不到谐波, 提高了输出 信号的质量。 附图说明 The embodiment of the invention adopts a redundant branch similar to the digital-to-analog conversion branch structure in the digital-to-analog conversion unit circuit, and the control signals of the redundant branch and the control signals of the digital-to-analog conversion branch are mutually redundant. The same charge transfer is performed for each preset period, and the second harmonic caused by the DC offset of 0UTP and OUTN is converted into high frequency noise, so that harmonics are not seen in the output signal bandwidth, and the output is improved. The quality of the signal. DRAWINGS
为了更清楚地说明本发明实施例或现有技术中的技术方案, 下面将对实 施例或现有技术描述中所需要使用的附图作一简单地介绍, 显而易见地, 下 面描述中的附图是本发明的一些实施例, 对于本领域普通技术人员来讲, 在 不付出创造性劳动性的前提下, 还可以根据这些附图获得其他的附图。  In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, a brief description of the drawings used in the embodiments or the prior art description will be briefly described below. Obviously, the drawings in the following description It is a certain embodiment of the present invention, and other drawings can be obtained from those skilled in the art without any inventive labor.
图 1为现有技术在电流舵型 DAC中增加反馈回路的电路示意图。  FIG. 1 is a schematic diagram of a circuit for adding a feedback loop in a current steering type DAC in the prior art.
图 2为本发明实施例提供的一种数模转换单元电路实施例一的电路示意 图。  FIG. 2 is a schematic circuit diagram of Embodiment 1 of a digital-to-analog conversion unit circuit according to an embodiment of the present invention.
图 3为图 2所示实施例中时钟信号和各控制信号的一种时序示意图。 图 4为本发明实施例提供的一种数模转换单元电路实施例二的电路示意 图。  FIG. 3 is a timing diagram of a clock signal and each control signal in the embodiment shown in FIG. FIG. 4 is a schematic circuit diagram of Embodiment 2 of a digital-to-analog conversion unit circuit according to an embodiment of the present invention.
图 5为本发明实施例提供的一种数模转换器实施例的原理示意图。 具体实施方式  FIG. 5 is a schematic diagram of a schematic diagram of an embodiment of a digital to analog converter according to an embodiment of the present invention. detailed description
为使本发明的目的、 技术方案和优点更加清楚, 下面将结合本发明实施 例中的附图, 对本发明实施例中的技术方案进行清楚、 完整地描述, 显然, 所描述的实施例是本发明一部分实施例, 而不是全部的实施例。 基于本发明 中的实施例, 本领域普通技术人员在没有作出创造性劳动前提下所获得的所 有其他实施例, 都属于本发明保护的范围。  The technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the drawings in the embodiments of the present invention. Some embodiments, rather than all of the embodiments, are invented. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
为了对本发明实施例的技术方案进行清楚详细的解释, 此处先简要介绍 一下本发明实施例相关的技术。 电流舵型 DAC包括一对金属氧化物半导体场 效应晶体管 ( Metal-Oxide-Semiconductor Field-Effect Transistor,简称 MOSFET ) 组成的差分对管, 通过将输入的数字信号转换成开关控制信号来控制差分对 管, 可以将加和点的电流引向 OUTP或 OUTN, OUTP和 OUTN再连接到电阻 阵列, 将输出的电流转变为电压, 以形成输出的模拟信号。 电流舵型 DAC— 个缺点是电流源单元漏极电压, 即加和点电压, 会随着开关的切换而变化, 其变化值与电流舵输出的 OUTP和 OUTN电压差有关系。加和点电压的变化会 导致该加和点的节点电容充放电荷, 在开关切换时, 该节点电容上的电荷从 current steering单元的一端转移到输出的另一端 ( charge transfer ) , 当这些电 荷与码型相关时, 就会产生谐波, 使输出信号变差。 In order to explain the technical solutions of the embodiments of the present invention in detail, the techniques related to the embodiments of the present invention are briefly introduced herein. The current steering type DAC includes a pair of metal-oxide-semiconductor field-effect transistor (MOSFET) differential pair tubes, and the differential pair tube is controlled by converting the input digital signal into a switch control signal. , the current of the summing point can be directed to OUTP or OUTN, and OUTP and OUTN are connected to the resistor. The array converts the output current into a voltage to form an analog signal for the output. The current rudder type DAC has a disadvantage that the drain voltage of the current source unit, that is, the summing point voltage, changes with the switching of the switch, and the change value is related to the OUTP and OUTN voltage difference of the current rudder output. The change of the sum point voltage causes the node capacitance of the summing point to charge and discharge. When the switch is switched, the charge on the node capacitor is transferred from one end of the current steering unit to the other end of the output (charge transfer). When it is related to the pattern, harmonics are generated and the output signal is degraded.
通过减小加和点的电压变化可以提高动态性能和获得高质量的信号输 出。 图 1为现有技术在电流舵型 DAC中增加反馈回路的电路示意图。 如图 1 所示, 该电路中分两组反馈控制电路, 如图 1中的 230Ρ和 230Ν模块, 来减 小由于输出端电压变化而导致的加和节点 (即 S fSN ) 电压变化, 图 1 中的 210-Γ210-Ν为 DAC单元。 230P模块包括一个运算放大器 240P , M0S管 M5P 和 M6P , 电流源 242P和 244P; M5P是二级管接法, 为 240P的正端提供了一 个稳定的参考电压; M6P管的源极连接到 240P的负端, 由于 M6P的漏极与输 出正端 0UTP相连, 故 240P的负端电压与 0UTP电压有一定的线型关系, 这样 形成了一个负反馈系统; 240P输出电压控制 M6P的衬底, 从而改变 M6P的阈 值电压, 这样 M6P的源极电压就变得较为稳定。 换句话说, 通过改变 M6P的 阈值电压使 M6P的源极电压基本不变; 240P的输出同时耦合到各差分单元的 开关管 Μ3ΓΜ3Ν,因此通过反馈控制逻辑, Μ3ΓΜ3Ν的源极电压保持基本不变。 类似的, 230N模块包括一个运算放大器 240N, M0S管 M5N和 M6N,电流源 242N 和 244N,通过反馈控制逻辑使得 M41—M4N的源极电压保持不变。另夕卜, D1_DN、 D8 TD8N为对输入的数字信号经开关驱动单元转换输出的控制各 DAC单元中 M0S管栅极的控制信号, 其中每个 DAC单元的两个控制信号为 "非" 的关系, 比如 D1和 D81 , DN和 D8N等。  Dynamic performance and high quality signal output can be achieved by reducing the voltage variation at the summing junction. FIG. 1 is a schematic diagram of a circuit for adding a feedback loop in a current steering type DAC in the prior art. As shown in Figure 1, the circuit consists of two sets of feedback control circuits, such as the 230Ρ and 230Ν modules in Figure 1, to reduce the voltage change of the summing node (ie, S fSN ) due to the voltage change at the output, Figure 1 The 210-Γ210-Ν in the DAC unit. The 230P module includes an operational amplifier 240P, M0S tubes M5P and M6P, current sources 242P and 244P; M5P is a diode connection method that provides a stable reference voltage for the positive terminal of 240P; the source of the M6P tube is connected to 240P Negative terminal, since the drain of M6P is connected to the positive terminal OUTP of the output, the negative terminal voltage of 240P has a certain linear relationship with the 0UTP voltage, thus forming a negative feedback system; the 240P output voltage controls the substrate of M6P, thereby changing The threshold voltage of M6P, so that the source voltage of M6P becomes more stable. In other words, the source voltage of M6P is substantially unchanged by changing the threshold voltage of M6P; the output of 240P is simultaneously coupled to the switching transistors Μ3ΓΜ3Ν of each differential unit, so the source voltage of Μ3ΓΜ3Ν remains substantially unchanged through the feedback control logic. Similarly, the 230N module includes an operational amplifier 240N, MOSFETs M5N and M6N, current sources 242N and 244N, and the source voltage of the M41-M4N is held constant by feedback control logic. In addition, D1_DN, D8 TD8N is a control signal for controlling the gate of the M0S tube in each DAC unit by converting the output digital signal through the switch driving unit, wherein the two control signals of each DAC unit are "non-" relationship , such as D1 and D81, DN and D8N.
上述方案通过反馈回路可以使得 0UP和 0UTN的信号变化不会耦合到加和 点, 从而降低三次谐波; 但是, 当 0UTP和 0UTN电压有直流偏差的情况, 该 偏差会耦合到加和点。 在而 A的模式时, 该偏差会引起较大的二次谐波; 同 时运算放大器本身也会引入偏差, 恶化输出信号; 且上述方案不太适合用于 丽 OS开关, 因为普通工艺的丽 OS的衬底都是 Psub , 没法单独控制; 另外, 增加的运算放大器对带宽要求较大, 会使电路的功耗增加。 The above scheme can make the signal changes of 0UP and OUTN not coupled to the summing point through the feedback loop, thereby reducing the third harmonic; however, when the 0UTP and the OUTN voltage have a DC offset, the deviation is coupled to the summing point. In the mode of A, the deviation will cause a larger second harmonic; The operational amplifier itself also introduces deviations and deteriorates the output signal; and the above scheme is not suitable for the R&S switch, because the substrates of the conventional process are all Psub, which cannot be controlled separately; in addition, the added operational amplifier pair Larger bandwidth requirements will increase the power consumption of the circuit.
而 A模式下, 在输入信号的负半周期, 每一个使用的 DAC单元都不重复, 例如, 假设有八个 DAC单元, 第一次输入代码为 2,打开 dac单元阵列的第 1、 2个单元; 下一个输入代码为 3 , 打开第 3、 4、 5个单元, 第 1、 2个单元被 关闭; 在输入信号的正半周期, DAC 单元根据输入代码的不同会被重复, 如 输入代码先后为 6和 7时, 就有 5个 DAC单元被重复, 即保持打开状态。  In the A mode, in the negative half cycle of the input signal, each DAC unit used is not repeated. For example, if there are eight DAC units, the first input code is 2, and the first and second of the dac cell array are turned on. Unit; the next input code is 3, open the 3rd, 4th, and 5th units, the first and second units are turned off; during the positive half cycle of the input signal, the DAC unit will be repeated according to the input code, such as the input code. When it is 6 and 7, there are 5 DAC units that are repeated, that is, remain open.
在 NRZ型 cur rent s teer ing DAC结构中, 一类主要的与码型相关的误差 就是由于电流源漏端的寄生电容充放电导致的电荷转移。 结合图 1来说, 电 流源与差分对管相连的节点 S 1会存在寄生电容, 如果该节点电压发生变化, 就会往 0UTP或 0UTN充放电荷。 举例来说, 若 0UTP和 0UTN电压的直流偏差 使得 0UTP>0UTN , 则 D1从低到高跳变时, 0UTP往 S 1充电, D81从低到高跳 变时 S 1往 0UTN放电。 假设 Qesl为节点 S 1往 0UTP或 0UTN转移的电荷量, CS1 为节点 S 1的寄生电容的容值, A VS1为节点 S 1的电压变化值, 则有: In the NRZ type of cur rent s teer ing DAC structure, a major type of pattern-related error is the charge transfer due to the parasitic capacitance charge and discharge at the drain of the current source. Referring to Figure 1, the current source is connected to the differential pair of nodes S 1 with parasitic capacitance. If the node voltage changes, it will charge and discharge to 0UTP or OUTN. For example, if the DC offset of the 0UTP and OUTN voltages makes 0UTP>0UTN, then 0UTP is charged to S1 when D1 transitions from low to high, and S1 is discharged to 0UTN when D81 transitions from low to high. Suppose Q esl is the amount of charge transferred from node S 1 to 0UTP or OUTN, C S1 is the capacitance of the parasitic capacitance of node S 1 , and AV S1 is the voltage change value of node S 1 , then:
Qesl= CS1 * A VS1 ( 1 ) Q esl = C S1 * AV S1 ( 1 )
由于上述电荷转移是周期性的, 且与输入信号的频率相关, 这些与码型 相关的误差会产生谐波, 使输出信号质量变差。  Since the above charge transfer is periodic and related to the frequency of the input signal, these pattern-related errors produce harmonics that degrade the quality of the output signal.
本发明实施例通过设计一路和现有的 DAC单元同样的电路, 使得每一个 预设周期都有相同的电荷转移, 这样电荷转移的误差就与输入信号的频率无 关, 也就是说, 通过每个预设周期都注入相同的电荷能量, 原本的谐波就可 以转变为高频噪声, 这部分噪声可以被后级滤波器滤除, 最终获得高性能的 输出信号。  The embodiment of the present invention has the same circuit as the existing DAC unit, so that each preset cycle has the same charge transfer, so that the charge transfer error is independent of the frequency of the input signal, that is, through each The preset charge is injected with the same charge energy, and the original harmonic can be converted into high-frequency noise. This part of the noise can be filtered by the post-stage filter to obtain a high-performance output signal.
图 2为本发明实施例提供的一种数模转换单元电路实施例一的电路示意 图。 如图 2所示, 该实施例包括:  FIG. 2 is a schematic circuit diagram of Embodiment 1 of a digital-to-analog conversion unit circuit according to an embodiment of the present invention. As shown in FIG. 2, this embodiment includes:
数模转换支路 21和冗余支路 22; 数模转换支路 21包括电流源 211、 第一 M0SFET212和第二 MOSFET213 , 电流 源 211通过第一加和点 214分别连接第一 M0SFET212、 第二 M0SFET213的源极, 第一 M0SFET212、第二 M0SFET213的漏极分别连接 0UTP、 0UTN,第一 M0SFET212、 第二 MOSFET213的栅极分别连接第一输入端 inpl、 第二输入端 inp2; Digital to analog conversion branch 21 and redundant branch 22; The digital-to-analog conversion branch 21 includes a current source 211, a first MOSFET 212, and a second MOSFET 213. The current source 211 is connected to the source of the first MOSFET 212, the second MOSFET 213, the first MOSFET 212, and the second MOSFET 213 through the first summing point 214, respectively. The drains are connected to the first input terminal inpl and the second input terminal inp2, respectively, connecting the gates of the first MOSFET 212 and the second MOSFET 213;
冗余支路 22包括处于高阻态的第二加和点 221、 第三 M0SFET222和第四 MOSFET223 , 第二加和点 分别连接第三 M0SFET222、 第四 MOSFE 的源极, 第三 MOSFET222、第四 MOSFET223的漏极分别连接 0UTP、 0UTN,第三 MOSFET222、 第四 MOSFET223的栅极分别连接第三输入端 inp3、 第四输入端 inp4; The redundancy branch 22 includes a second summing point 221 in a high resistance state, a third MOSFET 222 and a fourth MOSFET 223. The second summing point is respectively connected to the third MOSFET 222 , the source of the fourth MOSFE, and the third MOSFET 222 . The drains of the fourth MOSFET 22 3 are respectively connected to the OUTP, 0UTN, and the gates of the third MOSFET 222 and the fourth MOSFET 22 3 are respectively connected to the third input terminal inp3 and the fourth input terminal inp 4 ;
第一 M0SFET212、 第二 MOSFET213、 第三 M0SFET222和第四 MOSFET223为参 数相同的 N型 MOSFET,第三输入端 inp3输入的第三控制信号 p_duml与第一输入 端 inpl输入的第一控制信号 pi互为冗余, 第四输入端 inp4输入的第四控制信 号 n_duml与第二输入端 inp2输入的第二控制信号 nl互为冗余。  The first MOSFET 212, the second MOSFET 213, the third MOSFET 222, and the fourth MOSFET 223 are N-type MOSFETs having the same parameter, and the third control signal p_duml input by the third input terminal inp3 and the first control signal pi input by the first input terminal inpl are Redundantly, the fourth control signal n_duml input by the fourth input terminal inp4 and the second control signal n1 input by the second input terminal inp2 are mutually redundant.
本实施例中的电流源 211可以采用现有技术中的任意电流源实现, 比如 图 1所示的 AVDD、 Mi l和 M21组成的电流源, 本实施例对此不作限定。 另夕卜, 第一控制信号 pi和第二控制信号 nl可以像现有技术中一样互补,即互为 "非" 的关系,即 pl为高电平时 nl为氏电平,反之也是如此。第三控制信号 p-duml 和第四控制信号 n_duml的关系也是如此。 这里处于高阻态的第二加和点 221 可以采用现有技术中的方法实现,比如将第二加和点 221连接第五 MOSFET的 漏极, 所述第五 MOSFET的源极和栅极接地, 所述第五 MOSFET为正极性(P 型 ) MOSFET, 本实施例对此不作限定。  The current source 211 in this embodiment can be implemented by any current source in the prior art, such as the current sources of AVDD, Mi l and M21 shown in FIG. 1 , which is not limited in this embodiment. In addition, the first control signal pi and the second control signal n1 may be complementary as in the prior art, that is, a relationship of "Non" to each other, that is, when pl is at a high level, nl is at a level of C, and vice versa. The same is true for the relationship between the third control signal p-duml and the fourth control signal n_duml. The second summing point 221 in the high resistance state can be implemented by a method in the prior art, such as connecting the second summing point 221 to the drain of the fifth MOSFET, and the source and the gate of the fifth MOSFET are grounded. The fifth MOSFET is a positive (P-type) MOSFET, which is not limited in this embodiment.
第三输入端 inp 3输入的第三控制信号 P- duml与第一输入端 inpl输入的第 一控制信号 pl互为冗余是指, 在每个预设周期, 第三控制信号 p-ckiml与第一 控制信号 pl的同向电平跳变次数之和等于 1 , 也就是说, 在每个预设周期都存 在一次 pl或 p-ckiml的同向电平跳变, 即每个预设周期所述第三控制信号与所 述第一控制信号从低到高的电平跳变次数之和等于 1 ,或所述第三控制信号与 所述第一控制信号从高到低的电平跳变次数之和等于 1 ;第四输入端 inp4输入 的第四控制信号 n_duml与第二输入端 inp2输入的第二控制信号 nl互为冗余是 指, 在每个预设周期, 第四控制信号 n_duml与第二控制信号 nl的同向电平跳 变次数之和等于 1 , 也就是说, 在每个预设周期都存在一次 111或11_(1讓1的同向 电平跳变, 即每个预设周期所述第四控制信号与所述第二控制信号从低到高 的的电平跳变次数之和等于 1或所述第四控制信号与所述第二控制信号从高 到低的的电平跳变次数之和等于 1。 The third control signal P-duml input by the third input terminal inp 3 and the first control signal pl input by the first input terminal inpl are mutually redundant, meaning that the third control signal p-ckiml and each preset period The sum of the number of times of the same level jump of the first control signal pl is equal to 1, that is, there is a same level jump of pl or p-ckiml in each preset period, that is, each preset period And a sum of the third control signal and the first control signal from a low to a high level transition is equal to 1, or the third control signal and the first control signal are jumped from a high to a low level The sum of the variables is equal to 1; the fourth input is inp4 input The redundancy between the fourth control signal n_duml and the second control signal n1 input by the second input terminal inp2 means that, in each preset period, the fourth control signal n_duml and the second control signal n1 are in the same level jump. The sum of the number of times is equal to 1, that is, there is a 111 or 11_ (1 let 1 of the same level jump in each preset period, that is, the fourth control signal and the said The sum of the number of level transitions of the second control signal from low to high is equal to 1 or the sum of the number of level transitions of the fourth control signal and the second control signal from high to low is equal to one.
第一 M0SFET212、 第二 MOSFET213、 第三 M0SFET222和第四 MOSFET223参数 相同,使得数模转换支路 21中第一加和点 214的寄生电容的容值与冗余支路 22 中第二加和点 221的寄生电容的容值相等。 假设第一加和点 214和第二加和点 221寄生电容的容值均为 C , 每个预设周期 pi或 p-duml的电压变化的绝对值均 为 A V, 对应地, 每个预设周期 111或11_(1111111的电压变化的绝对值也为 A V, 则 每个预设周期从 0UTP通过第一加和点 114或第二加和点 221转移到 0UTN的电荷 量均为 C *△ V ,或是每个预设周期从 0UTN通过第一加和点 214或第二加和点 221 转移到 0UTP的电荷量均为 C *△ V。  The first MOSFET 212, the second MOSFET 213, the third MOSFET 222, and the fourth MOSFET 223 have the same parameters such that the capacitance of the parasitic capacitance of the first summing point 214 in the digital-to-analog conversion branch 21 and the second summing point in the redundant branch 22 The capacitance of the parasitic capacitance of 221 is equal. Assuming that the capacitance values of the parasitic capacitances of the first summing point 214 and the second summing point 221 are both C, the absolute value of the voltage change of each preset period pi or p-duml is AV, correspondingly, each preset The absolute value of the voltage change of the period 111 or 11_(1111111 is also AV, and the amount of charge transferred from the 0UTP through the first summing point 114 or the second summing point 221 to the OUTN for each preset period is C*?V Or, the amount of charge transferred from 0UTN through the first summing point 214 or the second summing point 221 to the 0UTP for each preset period is C*ΔV.
这里的预设周期较优地可以设为 2倍的时钟周期。 应用中, 可以不用严格 的按照预设周期实现控制信号跳变, 时钟信号和各控制信号的具体时序可以 如图 3所示, 其中 CLK为时钟信号, pi和 nl是控制数模转换支路 21的 M0SFET的 开关信号, P-dumWmi_duml为控制冗余支路 22的 M0SFET的开关信号, 只要开 关信号从低到高或从高到低电平转换一次, 就会产生一次电荷转移。 加入冗 余支路 22后, p_duml与 pi信号形成互为冗余的关系: 即只要数模转换支路 21 没有电荷转移到 0UTP或 0UTN, 则冗余支路 22就会转移电荷到 0UTP或 0UTN。 图 3 所示的时序产生的电荷转移的能量主要集中在大约 Fs/2处, 其中 Fs为时钟频 率, 也就是采样频率; 这部分能量可以被后级低通滤波器滤除。  The preset period here can be preferably set to 2 times the clock period. In the application, the control signal jump can be realized without strictly following the preset period. The specific timing of the clock signal and each control signal can be as shown in FIG. 3, where CLK is a clock signal, and pi and nl are control digital-to-analog conversion branches 21 The switching signal of the M0SFET, P-dumWmi_duml is the switching signal of the MOSFET controlling the redundant branch 22, and a charge transfer occurs whenever the switching signal is switched from low to high or high to low. After the redundant branch 22 is added, the p_duml and the pi signal form a mutually redundant relationship: that is, as long as the digital-to-analog conversion branch 21 has no charge transferred to the OUTP or the OUTN, the redundant branch 22 transfers the charge to the 0UTP or the OUTN. . The charge transfer energy generated by the timing shown in Figure 3 is mainly concentrated at approximately Fs/2, where Fs is the clock frequency, which is the sampling frequency; this part of the energy can be filtered by the post-stage low-pass filter.
本发明实施例采用了在数模转换单元电路中增加与数模转换支路结构类 似的冗余支路,且冗余支路的控制信号与数模转换支路的控制信号互为冗余, 使得每个预设周期都有相同的电荷转移, 将 0UTP和 0UTN的直流偏差导致的二 次谐波转变为高频噪声, 从而在输出信号带宽内看不到谐波, 提高了输出信 号的质量。 The embodiment of the invention adopts a redundant branch similar to the digital-to-analog conversion branch structure in the digital-to-analog conversion unit circuit, and the control signals of the redundant branch and the control signals of the digital-to-analog conversion branch are mutually redundant. So that each preset cycle has the same charge transfer, which will result in the DC offset of 0UTP and OUTN. The subharmonic is converted to high frequency noise, so that harmonics are not seen in the output signal bandwidth, improving the quality of the output signal.
图 4为本发明实施例提供的一种数模转换单元电路实施例二的电路示意 图。 如图 4所示, 该实施例包括:  FIG. 4 is a schematic circuit diagram of Embodiment 2 of a digital-to-analog conversion unit circuit according to an embodiment of the present invention. As shown in FIG. 4, the embodiment includes:
数模转换支路 41和冗余支路 42;  Digital to analog conversion branch 41 and redundant branch 42;
数模转换支路 41包括电流源 411、 第一 M0SFET412和第二 M0SFET41 3 , 电流 源 41 1通过第一加和点 414分别连接第— M0SFET412、 第二 M0SFET41 3的源极, 第一 M0SFET412、第二 M0SFET41 3的漏极分别连接 0UTP、 0UTN,第一 M0SFET412、 第二 M0SFET41 3的栅极分别连接第一输入端 inpl、 第二输入端 inp2 ;  The digital-to-analog conversion branch 41 includes a current source 411, a first MOSFET 412, and a second MOSFET 4113. The current source 41 1 is connected to the source of the first MOSFET 412 and the second MOSFET 41 through the first summing point 414, respectively, the first MOSFET 412, The drains of the second MOSFETs 41 are connected to the first input terminal inpl and the second input terminal inp2, respectively. The gates of the first MOSFETs 412 and the second MOSFETs are connected to the first input terminal inpl and the second input terminal inp2;
数模转换支路 41还包括: 电流阱 431、 第六 M0SFET432和第七 MOSFET433 , 电流阱 431通过第三加和点 434分别连接第六 M0SFET432、 第七 MOSFET433的源 极, 第六 M0SFET432、 第七 MOSFET433的漏极分别连接 0UTP、 0UTN , 第六 M0SFET432 , 第七 MOSFET433的栅极分别连接第二输入端 inp2、 第一输入端 inpl ;  The digital-to-analog conversion branch 41 further includes: a current sink 431, a sixth MOSFET 432, and a seventh MOSFET 433. The current sink 431 is connected to the source of the sixth MOSFET 432, the seventh MOSFET 433, the sixth MOSFET 432, and the seventh MOSFET 433 through the third summing point 434, respectively. The drains are respectively connected to the 0TPP, 0UTN, and the sixth MOSFET 432, and the gates of the seventh MOSFET 433 are respectively connected to the second input terminal inp2 and the first input terminal inpl;
冗余支路 42包括处于高阻态的第二加和点 421、 第三 M0SFET422和第四 M0SFET423 , 第二加和点 l分别连接第三 M0SFET422、 第四 M0SFET423的源极, 第三 M0SFET422、第四 M0SFET423的漏极分别连接 0UTP、 0UTN,第三 M0SFET422、 第四 M0SFET423的栅极分别连接第三输入端 inp3、 第四输入端 inp4 ; The redundancy branch 42 includes a second summing point 421 in a high resistance state, a third MOSFET 422 and a fourth MOSFET 423 , and the second summing point 1 is connected to the sources of the third MOSFET 422 and the fourth MOSFET 42 3, respectively. The drains of the MOSFETs 422 and the fourth MOSFETs 42 are respectively connected to the OUTP, 0UTN, and the gates of the third MOSFET 422 and the fourth MOSFET 42 are respectively connected to the third input terminal inp3 and the fourth input terminal inp 4 ;
冗余支路 42还包括: 第八 M0SFET441、 第九 M0SFET442和第十 M0SFET443 , 第八 M0SFET441通过第四加和点 444分别连接第九 M0SFET442、 第十 M0SFET443 的源极, 第九 M0SFET442、 第十 M0SFET443的漏极分别连接 0UTP、 0UTN , 第九 M0SFET442 , 第十 M0SFET443的栅极分别连接第四输入端 inp4、 第三输入端 inp3;  The redundancy branch 42 further includes: an eighth MOSFET 441, a ninth MOSFET 442, and a tenth MOSFET 443. The eighth MOSFET 441 is connected to the ninth MOSFET442, the source of the tenth MOSFET 443, the ninth MOSFET442, and the tenth MOSFET 443 through the fourth summing point 444, respectively. The drains are respectively connected to the first input terminal inp4 and the third input terminal inp3, respectively, connecting the 0UTP, 0UTN, and the ninth MOSFET 442, and the gate of the tenth MOSFET 443;
第一 M0SFET412、 第二 M0SFET41 3、 第三 M0SFET422和第四 M0SFET423为参 数相同的 N型 M0SFET ,第三输入端 inp3输入的第三控制信号 p_duml与第一输入 端 inpl输入的第一控制信号 pi互为冗余, 第四输入端 inp4输入的第四控制信 号 n_duml与第二输入端 inp2输入的第二控制信号 nl互为冗余; The first MOSFET 412, the second MOSFET 41, the third MOSFET 422, and the fourth MOSFET 423 are N-type MOSFETs of the same parameter, and the third control signal p_duml input by the third input terminal inp3 is mutually coupled with the first control signal pi input by the first input terminal inpl. For redundancy, the fourth control signal input to the fourth input terminal inp4 The number n_duml and the second control signal n1 input by the second input terminal inp2 are mutually redundant;
第六 M0SFET432、 第七 MOSFET433、 第九 M0SFET442和第十 M0SFET443为参 数相同的 N型 MOSFET, 所述第八 MOSFET为 N型 M0SFET。  The sixth MOSFET 432, the seventh MOSFET 433, the ninth MOSFET 442, and the tenth MOSFET 443 are N-type MOSFETs having the same parameters, and the eighth MOSFET is an N-type MOSFET.
这里的电流阱 431可以采用现有技术中的任意电流阱实现, 比如通过一 N型 MOSFET实现, 具体地可以将第三加和点 434连接该 N型 MOSFET的漏极, 将该 N型 MOSFET的源极接地, 栅极接一偏置电压, 本实施例对此不作限定。  The current sink 431 can be implemented by any current sink in the prior art, for example, by an N-type MOSFET. Specifically, a third summing point 434 can be connected to the drain of the N-type MOSFET, and the source of the N-type MOSFET. Grounding, the gate is connected to a bias voltage, which is not limited in this embodiment.
本实施例在图 2所示实施例一的基础上, 数模转换支路和冗余支路均对 称地增加了与图 2所示的电路类似的电路, 形成了全差分的数模转换支路和 冗余支路, 可以提高输出信号的幅度。 另外, 本实施例中电荷转移的情况也 与图 2所示的实施例一类似, 只是增加的部分电路的电荷转移量与实施例一 的电荷转移量叠加, 此处不再赘述。  In this embodiment, on the basis of the first embodiment shown in FIG. 2, the digital-to-analog conversion branch and the redundant branch symmetrically add circuits similar to those shown in FIG. 2, forming a fully differential digital-to-analog conversion branch. Roads and redundant branches can increase the amplitude of the output signal. In addition, the case of charge transfer in this embodiment is similar to that of the first embodiment shown in FIG. 2, except that the amount of charge transfer of the added partial circuit is superimposed with the charge transfer amount of the first embodiment, and details are not described herein again.
图 5为本发明实施例提供的一种数模转换器实施例的原理示意图。 如图 5所示, 该数模转换器包括:  FIG. 5 is a schematic diagram of a schematic diagram of an embodiment of a digital to analog converter according to an embodiment of the present invention. As shown in FIG. 5, the digital-to-analog converter includes:
至少一个数模转换单元电路 50f 50N, 数模转换单元电路 50Γ50Ν为如 本发明实施例提供的一种数模转换单元电路实施例一或实施例二所述的电 路;  At least one digital-to-analog conversion unit circuit 50f 50N, the digital-to-analog conversion unit circuit 50Γ50Ν is a circuit of the digital-to-analog conversion unit circuit embodiment 1 or the second embodiment provided by the embodiment of the invention;
开关驱动单元 51 , 开关驱动单元 51的输入端输入待转换的数字信号, 开 关驱动单元 51的输出端连接至少一个数模转换单元 50f 50N的第一输入端 inp 第二输入端 inp2、 第三输入端 inp3、 第四输入端 inp4The input end of the switch drive unit 51 inputs the digital signal to be converted, and the output end of the switch drive unit 51 is connected to the first input end of the at least one digital-to-analog conversion unit 50f 50N, the second input end inp 2 , and the third Input end inp3, fourth input end inp 4 .
具体地, 开关驱动单元 51根据待转换的数字信号, 输出用于控制每个数 模转换单元 50f 50N中 MOSFET的开关信号, 举例来说, 向每个数模转换单元输 出如图 3所示的 pi、 nl、 p-dum n-duml。  Specifically, the switch driving unit 51 outputs a switching signal for controlling the MOSFET in each of the digital-to-analog conversion units 50f to 50N according to the digital signal to be converted, for example, outputting to each of the digital-to-analog conversion units as shown in FIG. Pi, nl, p-dum n-duml.
在本发明的一个可选的实施例中, 该数模转换器还包括电阻阵列 52 , 电 阻阵列 52的输入端连接至少一个数模转换单元 50f 50N的 0UTP和 0UTN, 电阻阵 列 52的输出端输出转换后的模拟信号。 这里的电阻阵列可以采用现有技术中 的方法实现,只要能将数模转换单元电路 50Γ50Ν输出的电流转换成对应的电 压即可, 本实施例对此不作限定。 In an optional embodiment of the present invention, the digital-to-analog converter further includes a resistor array 52. The input end of the resistor array 52 is connected to the OUTP and the OUTN of the at least one digital-to-analog conversion unit 50f 50N, and the output of the resistor array 52 is output. The converted analog signal. The resistor array here can be implemented by a method in the prior art, as long as the current output from the digital-to-analog conversion unit circuit 50Γ50Ν can be converted into a corresponding electric current. It can be pressed, and this embodiment does not limit this.
在本发明的又一可选的实施例中, 该数模转换器还包括滤波器 53 , 连接 电阻阵列 52的输出端。具体地,滤波器 53用于将每个数模转换单元 50Γ50Ν 中电荷转移产生的高频噪声滤除。  In still another alternative embodiment of the invention, the digital to analog converter further includes a filter 53 coupled to the output of the resistor array 52. Specifically, the filter 53 is used to filter out high frequency noise generated by charge transfer in each of the digital to analog conversion units 50 Γ 50 。.
本发明实施例在数模转换单元电路中增加与数模转换支路结构类似的冗 余支路, 且冗余支路的控制信号与数模转换支路的控制信号互为冗余, 使得 每个预设周期都有相同的电荷转移, 将 0UTP和 0UTN的直流偏差导致的二次 谐波转变为高频噪声, 从而在输出信号带宽内看不到谐波, 提高了输出信号 的质量。 进一步地, 还可以通过滤波器将所述高频噪声滤除, 最终获得高性 能的输出信号。  In the embodiment of the present invention, a redundant branch similar to the digital-to-analog conversion branch structure is added in the digital-to-analog conversion unit circuit, and the control signals of the redundant branch and the control signals of the digital-to-analog conversion branch are redundant with each other, so that each Each preset cycle has the same charge transfer, and the second harmonic caused by the DC offset of 0UTP and OUTN is converted into high frequency noise, so that harmonics are not seen in the output signal bandwidth, and the quality of the output signal is improved. Further, the high frequency noise can also be filtered by a filter to finally obtain a high performance output signal.
本领域普通技术人员可以理解: 实现上述方法实施例的全部或部分步骤 可以通过程序指令相关的硬件来完成, 前述的程序可以存储于一计算机可读 取存储介质中, 该程序在执行时, 执行包括上述方法实施例的步骤; 而前述 的存储介质包括: ROM、 RAM, 磁碟或者光盘等各种可以存储程序代码的介 质。  A person skilled in the art can understand that all or part of the steps of implementing the above method embodiments may be completed by using hardware related to program instructions, and the foregoing program may be stored in a computer readable storage medium, and the program is executed when executed. The foregoing steps include the steps of the foregoing method embodiments; and the foregoing storage medium includes: a medium that can store program codes, such as a ROM, a RAM, a magnetic disk, or an optical disk.
最后应说明的是: 以上实施例仅用以说明本发明的技术方案, 而非对其 限制; 尽管参照前述实施例对本发明进行了详细的说明, 本领域的普通技术 人员应当理解: 其依然可以对前述各实施例所记载的技术方案进行修改, 或 者对其中部分技术特征进行等同替换; 而这些修改或者替换, 并不使相应技 术方案的本质脱离本发明各实施例技术方案的精神和范围。  It should be noted that the above embodiments are only for explaining the technical solutions of the present invention, and are not intended to be limiting; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that: The technical solutions described in the foregoing embodiments are modified, or some of the technical features are equivalently replaced. The modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

权 利 要 求 书 Claim
1、 一种数模转换单元电路, 其特征在于, 包括: 数模转换支路和冗余支 路;  A digital-to-analog conversion unit circuit, comprising: a digital-to-analog conversion branch and a redundant branch;
所述数模转换支路包括电流源、 第一金属氧化物半导体场效应晶体管 MOSFET和第二 MOSFET ,所述电流源通过第一加和点分别连接所述第一 MOSFET、 第二 MOSFET的源极, 所述第一 M0SFET、 第二 MOSFET的漏极分别连接输出正端、 输出负端, 所述第一 M0SFET、 第二 MOSFET的栅极分别连接第一输入端、 第二 输入端;  The digital-to-analog conversion branch includes a current source, a first metal-oxide-semiconductor field-effect transistor MOSFET, and a second MOSFET, wherein the current source is respectively connected to the source of the first MOSFET and the second MOSFET through a first summing point The drains of the first MOSFET and the second MOSFET are respectively connected to the output positive terminal and the output negative terminal, and the gates of the first MOSFET and the second MOSFET are respectively connected to the first input terminal and the second input terminal;
所述冗余支路包括处于高阻态的第二加和点、第三 MOSFET和第四 MOSFET , 所述第二加和点分别连接所述第三 M0SFET、 第四 MOSFET的源极, 所述第三 MOSFET , 第四 MOSFET的漏极分别连接所述输出正端、 输出负端, 所述第三 MOSFET , 第四 MOSFET的栅极分别连接第三输入端、 第四输入端;  The redundant branch includes a second summing point in a high resistance state, a third MOSFET and a fourth MOSFET, and the second summing point is respectively connected to sources of the third MOSFET and the fourth MOSFET, The drains of the third MOSFET and the fourth MOSFET are respectively connected to the output positive terminal and the output negative terminal, and the gates of the third MOSFET and the fourth MOSFET are respectively connected to the third input terminal and the fourth input terminal;
所述第一 MOSFET、 第二 MOSFET、 第三 MOSFET和第四 MOSFET为参数相同的 负极性(N型 ) MOSFET , 所述第三输入端输入的第三控制信号与所述第一输入 端输入的第一控制信号互为冗余, 所述第四输入端输入的第四控制信号与所 述第二输入端输入的第二控制信号互为冗余。  The first MOSFET, the second MOSFET, the third MOSFET, and the fourth MOSFET are negative polarity (N-type) MOSFETs having the same parameter, and the third control signal input by the third input terminal is input to the first input terminal The first control signals are redundant with each other, and the fourth control signal input by the fourth input terminal and the second control signal input by the second input terminal are mutually redundant.
2、 根据权利要求 1所述的电路, 其特征在于, 在每个预设周期, 所述第 三控制信号与所述第一控制信号从低到高的电平跳变次数之和等于 1 ,所述第 四控制信号与所述第二控制信号从低到高的的电平跳变次数之和等于 1。  2. The circuit according to claim 1, wherein the sum of the number of times the third control signal and the first control signal transition from low to high is equal to 1 in each preset period. The sum of the number of levels of the fourth control signal and the second control signal from low to high is equal to one.
3、 根据权利要求 1所述的电路, 其特征在于, 在每个预设周期, 所述第 三控制信号与所述第一控制信号从高到低的电平跳变次数之和等于 1 ,所述第 四控制信号与所述第二控制信号从高到低的的电平跳变次数之和等于 1。  3. The circuit according to claim 1, wherein the sum of the number of times the third control signal and the first control signal transition from high to low is equal to 1 in each preset period. A sum of the number of levels of the fourth control signal and the second control signal from high to low is equal to one.
4、 根据权利要求 1-3任一所述的电路, 其特征在于, 所述第二加和点连 接第五 MOSFET的漏极, 所述第五 MOSFET的源极和栅极接地, 所述第五 MOSFET 为正极性(P型 ) M0SFET。  The circuit according to any one of claims 1 to 3, wherein the second summing point is connected to the drain of the fifth MOSFET, and the source and the gate of the fifth MOSFET are grounded, the The five MOSFETs are positive (P-type) M0SFETs.
5、 根据权利要求 1-3任一所述的电路, 其特征在于, 所述数模转换支路 还包括: 电流阱、 第六 MOSFET和第七 MOSFET , 所述电流阱通过第三加和点分 别连接所述第六 M0SFET、 第七 MOSFET的源极, 所述第六 M0SFET、 第七 MOSFET 的漏极分别连接所述输出正端、 输出负端, 所述第六 M0SFET、 第七 MOSFET的 栅极分别连接所述第二输入端、 第一输入端; The circuit according to any one of claims 1 to 3, wherein the digital to analog conversion branch The method further includes: a current sink, a sixth MOSFET, and a seventh MOSFET, wherein the current sink is respectively connected to the sources of the sixth MOSFET and the seventh MOSFET through a third summing point, and the drains of the sixth MOSFET and the seventh MOSFET are respectively respectively Connecting the output positive terminal and the output negative terminal, the gates of the sixth MOSFET and the seventh MOSFET are respectively connected to the second input end and the first input end;
所述冗余支路还包括: 第八 MOSFET、 第九 MOSFET和第十 MOSFET , 所述第 八 MOSFET的漏极通过第四加和点分别连接所述第九 M0SFET、 第十 MOSFET的源 极, 所述第九 M0SFET、 第十 MOSFET的漏极分别连接所述输出正端、 输出负端, 所述第九 M0SFET、 第十 MOSFET的栅极分别连接所述第四输入端、 第三输入端, 所述第八 MOSFET的源极和栅极接地;  The redundancy branch further includes: an eighth MOSFET, a ninth MOSFET, and a tenth MOSFET, wherein the drain of the eighth MOSFET is respectively connected to the sources of the ninth MOSFET and the tenth MOSFET through a fourth summing point, The drains of the ninth MOSFET and the tenth MOSFET are respectively connected to the output positive terminal and the output negative terminal, and the gates of the ninth MOSFET and the tenth MOSFET are respectively connected to the fourth input terminal and the third input terminal. The source and the gate of the eighth MOSFET are grounded;
所述第六 M0SFET、 第七 M0SFET、 第九 MOSFET和第十 MOSFET为参数相同的 N 型 MOSFET , 所述第八 MOSFET为 N型 M0SFET。  The sixth MOSFET, the seventh MOSFET, the ninth MOSFET, and the tenth MOSFET are N-type MOSFETs of the same parameter, and the eighth MOSFET is an N-type MOSFET.
6、 一种数模转换器, 其特征在于, 包括: 至少一个数模转换单元电路, 所述数模转换单元电路为如权利要求 1 -5任一所述的电路;  A digital-to-analog converter, comprising: at least one digital-to-analog conversion unit circuit, wherein the digital-to-analog conversion unit circuit is the circuit according to any one of claims 1 to 5;
开关驱动单元, 所述开关驱动单元的输入端输入待转换的数字信号, 所 述开关驱动单元的输出端连接所述至少一个数模转换单元的第一输入端、 第 二输入端、 第三输入端、 第四输入端。  a switch driving unit, the input end of the switch driving unit inputs a digital signal to be converted, and the output end of the switch driving unit is connected to the first input end, the second input end, and the third input of the at least one digital-to-analog conversion unit End, fourth input.
7、 根据权利要求 6所述的数模转换器, 其特征在于, 还包括电阻阵列, 所述电阻阵列的输入端连接所述至少一个数模转换单元的输出正端和输出负 端, 所述电阻阵列的输出端输出转换后的模拟信号。  The digital-to-analog converter according to claim 6, further comprising a resistor array, wherein an input end of the resistor array is connected to an output positive terminal and an output negative terminal of the at least one digital-to-analog conversion unit, The output of the resistor array outputs the converted analog signal.
8、 根据权利要求 7所述的数模转换器, 其特征在于, 还包括滤波器, 连 接所述电阻阵列的输出端。  8. The digital to analog converter of claim 7 further comprising a filter coupled to the output of said resistor array.
PCT/CN2011/077525 2011-07-25 2011-07-25 Digital-to-analog unit circuit and digital-to-analog converter WO2012083689A1 (en)

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