WO2012148862A3 - Eddy current monitoring of metal residue or metal pillars - Google Patents

Eddy current monitoring of metal residue or metal pillars Download PDF

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Publication number
WO2012148862A3
WO2012148862A3 PCT/US2012/034712 US2012034712W WO2012148862A3 WO 2012148862 A3 WO2012148862 A3 WO 2012148862A3 US 2012034712 W US2012034712 W US 2012034712W WO 2012148862 A3 WO2012148862 A3 WO 2012148862A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal
eddy current
current monitoring
polishing
residue
Prior art date
Application number
PCT/US2012/034712
Other languages
French (fr)
Other versions
WO2012148862A2 (en
Inventor
Hassan G. Iravani
Kun Xu
Boguslaw A. Swedek
Ingemar Carlsson
Shih-Haur Shen
Wen-Chiang Tu
David Maxwell Gage
James C. Wang
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2014508471A priority Critical patent/JP2014513435A/en
Priority to KR1020137031405A priority patent/KR20140028036A/en
Publication of WO2012148862A2 publication Critical patent/WO2012148862A2/en
Publication of WO2012148862A3 publication Critical patent/WO2012148862A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and halting polishing when the eddy current monitoring system indicates that residue of the metal layer is removed from an underlying layer and a top surface of the underlying layer is exposed.
PCT/US2012/034712 2011-04-27 2012-04-23 Eddy current monitoring of metal residue or metal pillars WO2012148862A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014508471A JP2014513435A (en) 2011-04-27 2012-04-23 Eddy current monitoring of metal residues or metal pillars
KR1020137031405A KR20140028036A (en) 2011-04-27 2012-04-23 Eddy current monitoring of metal residue or metal pillars

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/095,822 2011-04-27
US13/095,822 US20120276817A1 (en) 2011-04-27 2011-04-27 Eddy current monitoring of metal residue or metal pillars

Publications (2)

Publication Number Publication Date
WO2012148862A2 WO2012148862A2 (en) 2012-11-01
WO2012148862A3 true WO2012148862A3 (en) 2012-12-27

Family

ID=47068235

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/034712 WO2012148862A2 (en) 2011-04-27 2012-04-23 Eddy current monitoring of metal residue or metal pillars

Country Status (5)

Country Link
US (1) US20120276817A1 (en)
JP (1) JP2014513435A (en)
KR (1) KR20140028036A (en)
TW (1) TW201249592A (en)
WO (1) WO2012148862A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9205527B2 (en) * 2012-11-08 2015-12-08 Applied Materials, Inc. In-situ monitoring system with monitoring of elongated region
KR101699197B1 (en) * 2013-03-15 2017-01-23 어플라이드 머티어리얼스, 인코포레이티드 Dynamic residue clearing control with in-situ profile control(ispc)
JP6105371B2 (en) 2013-04-25 2017-03-29 株式会社荏原製作所 Polishing method and polishing apparatus
US9911664B2 (en) 2014-06-23 2018-03-06 Applied Materials, Inc. Substrate features for inductive monitoring of conductive trench depth
KR20230093548A (en) 2016-10-21 2023-06-27 어플라이드 머티어리얼스, 인코포레이티드 Core configuration for in-situ electromagnetic induction monitoring system
US10515862B2 (en) * 2017-04-05 2019-12-24 Applied Materials, Inc. Wafer based corrosion and time dependent chemical effects
US10170343B1 (en) * 2017-06-30 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Post-CMP cleaning apparatus and method with brush self-cleaning function

Citations (4)

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US5343146A (en) * 1992-10-05 1994-08-30 De Felsko Corporation Combination coating thickness gauge using a magnetic flux density sensor and an eddy current search coil
US20020055192A1 (en) * 2000-07-27 2002-05-09 Redeker Fred C. Chemical mechanical polishing of a metal layer with polishing rate monitoring
US20060021974A1 (en) * 2004-01-29 2006-02-02 Applied Materials, Inc. Method and composition for polishing a substrate
US7264537B1 (en) * 2006-08-04 2007-09-04 Novellus Systems, Inc. Methods for monitoring a chemical mechanical planarization process of a metal layer using an in-situ eddy current measuring system

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US6707540B1 (en) * 1999-12-23 2004-03-16 Kla-Tencor Corporation In-situ metalization monitoring using eddy current and optical measurements
KR100718737B1 (en) * 2000-01-17 2007-05-15 가부시키가이샤 에바라 세이사꾸쇼 Polishing apparatus
EP1143222A3 (en) * 2000-04-06 2002-01-02 Applied Materials, Inc. Method and apparatus for detecting the thickness of copper oxide
US6924641B1 (en) * 2000-05-19 2005-08-02 Applied Materials, Inc. Method and apparatus for monitoring a metal layer during chemical mechanical polishing
US6966816B2 (en) * 2001-05-02 2005-11-22 Applied Materials, Inc. Integrated endpoint detection system with optical and eddy current monitoring
US6811466B1 (en) * 2001-12-28 2004-11-02 Applied Materials, Inc. System and method for in-line metal profile measurement
US6937915B1 (en) * 2002-03-28 2005-08-30 Lam Research Corporation Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control
US6929531B2 (en) * 2002-09-19 2005-08-16 Lam Research Corporation System and method for metal residue detection and mapping within a multi-step sequence
JP2005011977A (en) * 2003-06-18 2005-01-13 Ebara Corp Device and method for substrate polishing
EP1639630B1 (en) * 2003-07-02 2015-01-28 Ebara Corporation Polishing apparatus and polishing method
US7153185B1 (en) * 2003-08-18 2006-12-26 Applied Materials, Inc. Substrate edge detection
US6991516B1 (en) * 2003-08-18 2006-01-31 Applied Materials Inc. Chemical mechanical polishing with multi-stage monitoring of metal clearing
US7074109B1 (en) * 2003-08-18 2006-07-11 Applied Materials Chemical mechanical polishing control system and method
US7097537B1 (en) * 2003-08-18 2006-08-29 Applied Materials, Inc. Determination of position of sensor measurements during polishing
JP4451111B2 (en) * 2003-10-20 2010-04-14 株式会社荏原製作所 Eddy current sensor
JP2005203729A (en) * 2003-12-19 2005-07-28 Ebara Corp Substrate polishing apparatus
US20060043071A1 (en) * 2004-09-02 2006-03-02 Liang-Lun Lee System and method for process control using in-situ thickness measurement
US7554199B2 (en) * 2005-11-22 2009-06-30 Consortium For Advanced Semiconductor Materials And Related Technologies Substrate for evaluation
JP5283506B2 (en) * 2006-09-12 2013-09-04 株式会社荏原製作所 Polishing apparatus and polishing method
JP5080933B2 (en) * 2007-10-18 2012-11-21 株式会社荏原製作所 Polishing monitoring method and polishing apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343146A (en) * 1992-10-05 1994-08-30 De Felsko Corporation Combination coating thickness gauge using a magnetic flux density sensor and an eddy current search coil
US20020055192A1 (en) * 2000-07-27 2002-05-09 Redeker Fred C. Chemical mechanical polishing of a metal layer with polishing rate monitoring
US20060021974A1 (en) * 2004-01-29 2006-02-02 Applied Materials, Inc. Method and composition for polishing a substrate
US7264537B1 (en) * 2006-08-04 2007-09-04 Novellus Systems, Inc. Methods for monitoring a chemical mechanical planarization process of a metal layer using an in-situ eddy current measuring system

Also Published As

Publication number Publication date
JP2014513435A (en) 2014-05-29
US20120276817A1 (en) 2012-11-01
WO2012148862A2 (en) 2012-11-01
KR20140028036A (en) 2014-03-07
TW201249592A (en) 2012-12-16

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