WO2013143241A1

WO2013143241A1 - Chemical vapour deposition method for organic metal compound and apparatus therefor

Info

Publication number: WO2013143241A1
Application number: PCT/CN2012/078581
Authority: WO
Inventors: 马悦; 黄占超; 何川; 王俊; 宋涛; 林芳; 任爱玲; 丁兴燮; 萨尔瓦多; 奚明
Original assignee: 理想能源设备(上海)有限公司
Priority date: 2012-03-30
Filing date: 2012-07-12
Publication date: 2013-10-03
Also published as: TW201339353A; CN103361624B; CN103361624A; TWI490367B

Abstract

Disclosed are a chemical vapour deposition method for an organic metal compound and an apparatus therefor. The method comprises: providing a base and at least one substrate; providing a first gas inlet device and a second gas inlet device, the spraying direction of a first gas along a first gas outlet forming an included angle with the spraying direction of a second gas along a second gas outlet; depositing the first gas and the second gas on the surface of the substrate to obtain a layer of organic metal compound; the first gas being distributed in the reaction region in a concentration gradient, comprising an A region and a B region, with the average gas concentration in the A region being higher than that in the B region; the second gas being distributed in the reaction region in a concentration gradient, comprising a C region and a D region, with the average gas concentration in the C region being higher than that in the D region; the A regions and the C regions being arranged alternately; and the substrate passing through the A region and the C region in sequence. The present invention can not only avoid the premature reaction of the reactive gases, but also improve the reaction rate and reduce production costs.

Description

Metal organic compound chemical vapor deposition method and device thereof

The present application claims priority to Chinese Patent Application No. 201210090988.6, entitled "Metal Organic Compound Chemical Vapor Deposition Method and Apparatus", filed on March 30, 2012, the entire contents of In this application. TECHNICAL FIELD The present invention relates to the field of chemical vapor deposition technologies, and in particular, to a metal organic compound chemical vapor deposition method and apparatus therefor. Background technique

Chemical vapor deposition (CVD) is a process in which a chemical reaction occurs under gaseous conditions to form a solid material deposited on the surface of a heated solid substrate, thereby producing a solid material, which is obtained by a chemical vapor deposition apparatus. achieve. Specifically, the CVD apparatus passes the reaction gas into the reaction chamber through the inlet device, and controls the reaction conditions such as the gas pressure and the temperature of the reaction chamber, so that the reaction gas reacts, thereby completing the deposition process step. In order to deposit the desired film, it is generally required to introduce a plurality of different reaction gases into the reaction chamber, and it is also necessary to introduce other non-reactive gases such as a carrier gas or a purge gas into the reaction chamber, so that it is necessary to set a plurality of CVD devices. Air intake devices. Metal Organic Chemical Vapor Deposition (MOCVD) device is mainly used for thin-layer single crystal of III-V group, II-VI compound and alloy of gallium nitride, gallium arsenide, indium phosphide and zinc oxide. The preparation of functional structural materials, with the increasing application range of the above functional structural materials, MOCVD devices have become one of the important devices of chemical vapor deposition devices. MOCVD generally uses a Group II or Group III metal organic source and a Group VI or Group V hydride source as a reaction gas, and uses hydrogen or nitrogen as a carrier gas to carry out vapor phase epitaxial growth on a substrate by thermal decomposition reaction. Thus, various thin layer single crystal materials of various cerium-VI compound semiconductors, m-V compound semiconductors, and their multiple solid solutions are grown. Since the transmission conditions of the steroid or group III metal organic source and the group VI or group V hydride source are different, it is necessary to separately separate the lanthanum or m group metal organic source and the VI group by different air intake means.

The Group V hydride source is transferred over the substrate. The prior art MOCVD apparatus generally includes: a reaction chamber;

a spray assembly located at the top of the reaction chamber, the spray assembly comprising two intake devices, the two intake devices respectively transporting a Group II or Group III metal organic source and a Group VI or Group V hydride source Above the substrate;

A susceptor disposed opposite the shower assembly, the susceptor having a heating unit for supporting and heating the substrate. The shower assembly is divided into a vertical type and a horizontal type according to the flow direction of the supplied reaction gas with respect to the flow direction of the substrate. A horizontal spray assembly as disclosed in Chinese Patent No. ZL200580011014, which allows a flow of a reactive gas to flow in a horizontal direction parallel to the substrate, Taiwan Patent

A vertical spray assembly as disclosed in TW201030179A1, which causes a flow of a reactive gas to flow in a direction perpendicular to the vertical direction of the substrate.

However, the horizontal spray assembly has a loss of reactant concentration along the path, thermal convection vortex and sidewall effect, which tends to cause uneven thickness and concentration of the substrate in the lateral and longitudinal directions; the vertical spray assembly has exhaust after reaction It cannot be discharged in time, so that the concentration in the radial direction is uneven, causing fluctuations in the thickness and concentration of the substrate in the radial direction.

See U.S. Patent Publication No.: US 7,709,398 B2, which is incorporated herein by reference. A method and apparatus for pre-treating two process gases to deposit a semiconductor layer. Referring to Figure 1, the apparatus has: a processing chamber 2 disposed in a reactor 1, the processing chamber 2 having a substrate holder 4 for at least one substrate 5; for heating the substrate holder 4 to a processing temperature a heating device 13; a gas inlet member 3, the gas inlet member 3 is disposed opposite the substrate holder 4 for introducing a first reaction gas (such as a cerium metal organic source) into the processing chamber 2, the gas inlet member 3 There are a plurality of first openings 6 for discharging the first reaction gas, the first openings 6 are disposed on the surface of the gas inlet member 3 disposed opposite the substrate holder 4; the pretreatment device 9 is for pretreatment a device to be introduced into the second reaction gas (such as a Group V hydride source) in the processing chamber 2, the pretreatment device 9 being disposed above the substrate in such a manner, and relative to The direction 11 in which the first reaction gas flows is laterally flowing. In the above technique, the Group III metal organic source flows in the vertical direction of the vertical substrate, the Group V hydride source flows in the horizontal direction parallel to the substrate, and the Group III metal organic source is on the entire horizontal surface corresponding to the upper surface of the substrate. There is a distribution, and the V-group hydride source is also distributed over the entire horizontal surface corresponding to the upper surface of the substrate, so that a continuous diffusion boundary layer can be formed on the substrate. However, before the two reactive gases reach the epitaxial growth surface of the substrate, the Group III metal organic source must pass through the entire Group V hydride source, and since the Group V hydride source is an excess reactant, the Group V hydride source molecules will block. A large number of Group III metal organic sources and carrier gases reach the surface of the substrate, causing the two gases to react in advance, ultimately reducing the use efficiency of the Group III metal organic source, resulting in waste of materials, and the price of the metal organic source material is very high. Expensive, this inevitably leads to an increase in production costs. It also reduces the deposition rate of the film.

Therefore, how to avoid the two reactive gases during the chemical vapor deposition of metal organic compounds It is an urgent problem to be solved by those skilled in the art to react in advance and increase the reaction rate. SUMMARY OF THE INVENTION The problem to be solved by the present invention is to provide a metal organic compound chemical vapor deposition method and apparatus thereof, which can prevent the reaction gas from reacting in advance, increase the reaction rate, and reduce the production cost.

In order to solve the above problems, the present invention provides a metal organic compound chemical vapor deposition method, comprising:

Providing a pedestal and at least one substrate, the pedestal having an upper surface, the substrate being disposed on the upper surface of the pedestal;

Providing a first intake device having a plurality of first air outlets for transmitting a first gas and a second air intake device having a plurality of second air outlets for transporting the second gas, the first gas along the The direction in which the first air outlet is ejected is at an angle with the direction in which the second gas is ejected along the second air outlet, and the angle of the angle is 60 degrees to 120 degrees;

The first gas and the second gas form a reaction region above the substrate, and a metal organic compound is deposited on the upper surface of the substrate;

a concentration gradient distribution of the first gas in the reaction region, including an A region and a B region, wherein the first gas average concentration of the A region is higher than the first gas average concentration of the B region; the second gas a concentration gradient distribution in the reaction region, including a C region and a D region, the second gas average concentration of the C region being higher than the second gas average concentration of the D region;

The A area is spaced apart from the C area, and the substrate passes through the A area and the C area in sequence.

Optionally, an angle formed by the direction in which the first gas is ejected along the first air outlet and the direction in which the second gas is ejected along the second air outlet is 90 degrees. Optionally, the Α region corresponds to the D region; and the B region corresponds to the C region.

Optionally, the number of the A area, the B area, the C area, and the D area ranges from 4 to 50. Optionally, a center of the base is provided with a mandrel, the base rotates around the mandrel, the base is circular, and a plurality of substrates are distributed around the mandrel on the base.

Optionally, the A region, the B region of the first gas, or the C region and the D region of the second gas are radially distributed around the mandrel.

Optionally, the base includes at least one substrate carrier, and the substrate is disposed on the substrate carrier.

Optionally, the substrate carrier rotates about its geometric center.

Optionally, the first gas comprises a Group III metal organic source and the second gas comprises a Group V hydrogen source.

Optionally, the group III metal organic source comprises Ga(CH ₃ ) ₃ , In(CH ₃ ) ₃ , A1(CH ₃ ) ₃ , Ga(C ₂ H ₅ ) ₃ , Zn(C ₂ H ₅ ) ₃ One or more of the gases; the Group V hydride source comprising one or more of NH ₃ , PH ₃ , AsH ₃ gases.

Optionally, the first gas comprises a Group V hydride source and the second gas comprises a Group III metal organic source.

Optionally, the concentration of the first gas decreases as the distance from the first air outlet increases. Optionally, the concentration of the second gas decreases as the distance from the second air outlet increases. In order to solve the above problems, the present invention also provides a metal organic compound chemical vapor deposition apparatus, comprising:

Reaction chamber

a pedestal disposed in the reaction chamber, the pedestal having an upper surface, at least one substrate disposed on the upper surface of the pedestal;

a rotary drive unit coupled to the base for rotating the base; one or more first air intake devices, each of the first air intake devices including a plurality of first air outlets for Transmitting the first gas;

One or more second air intake devices, each of the second air intake devices including a plurality of second air outlets for transmitting a second gas;

The direction in which the first gas is ejected along the first air outlet is at an angle to the direction in which the second gas is ejected along the second air outlet, and the angle of the angle is 60 degrees. 120 degrees;

Optionally, the substrate carrier rotates about its geometric center.

Optionally, the concentration of the first gas decreases as the distance from the first air outlet increases. Optionally, the concentration of the second gas decreases as the distance from the second air outlet increases. Optionally, the susceptor has a heating unit for heat-treating the substrate. Optionally, the first air intake device or the second air intake device is fixed on top of the reaction chamber.

Optionally, the metal organic compound chemical vapor deposition apparatus further comprises: a cooling device disposed at the top of the reaction chamber for reducing the temperature of the first gas or the second gas.

Optionally, the first air intake device includes a first air intake pipe and a first air guide disk, and a plurality of first air outlets are disposed on a horizontal surface of the first air guide disk, and the first gas is sequentially passed through An intake pipe, a first air guide disk, and the first air outlet port flow out in a direction perpendicular to the upper surface of the substrate.

Optionally, the second air intake device includes a second air intake pipe and a second air guide disk, and a plurality of second air outlets are disposed on a vertical surface of the second air guide disk, and the second gas is sequentially The second intake pipe, the second air guide disk, and the second air outlet are flowed out in a direction parallel to the upper surface of the substrate.

Optionally, the second air intake device is disposed in an intermediate portion of the reaction chamber, and the second gas flows to an edge region of the reaction chamber.

Optionally, the second air intake device is disposed in a peripheral region of the reaction chamber, and the second gas flows to an intermediate portion of the reaction chamber.

Optionally, the horizontal section of the second air guide disk is circular.

Optionally, the horizontal cross section of the second air guide disk is a polygon. Compared with the prior art, the present invention has the following advantages:

1) In the present invention, the direction in which the first gas is ejected is at an angle of 60 to 120 degrees from the direction in which the second gas is ejected, and the concentration of the first gas and the second gas in the reaction region are uniformly distributed, the first gas The average gas concentration of the corresponding A region is higher than the average gas concentration of the B region, and the average gas concentration of the C region corresponding to the second gas is higher than the average gas concentration of the D region, and the substrate is sequentially arranged by the interval A. Area and Area C. Since the high distribution region of the first gas (ie, the A region) and the high distribution region of the second gas (ie, the C region) are spaced apart, at least a majority of the first gas can directly reach the upper surface of the substrate without passing through the second gas. That is, at least a majority of the first gas and most of the second gas can reach the upper surface of the substrate, thereby greatly avoiding the advance reaction of the first gas and the second gas before reaching the upper surface of the substrate, thereby improving the use of the two reactive gases. The efficiency, correspondingly increased the reaction rate, that is, the deposition rate of the metal organic compound, increases the productivity, and reduces the production cost.

2) further, the first gas comprises a group III metal organic source, and the second gas comprises a group V hydride source, since the price of the group III metal organic source is much higher than the price of the group V hydride source, thereby The vertical flow of the Group III metal organic source to the upper surface of the substrate can substantially avoid material waste of the Group III metal organic source, thereby further reducing the production cost.

3) Further, since the V-group hydride source (ie, the second gas) is an excess reactant, the uniformity of the reaction rate is determined only by the distribution of the first gas on the substrate, so by adjusting the flow rate of the first gas, The reaction rate of the first gas and the second gas can be controlled, so that the uniformity of the reaction rate can be easily adjusted by the present invention.

4) Further, the center of the base is provided with a mandrel, and the base rotates around the base. By controlling the rotation speed of the base, the area ratio of the A area and the C area, the first gas and the second gas can be both The reaction is carried out on the upper surface of the substrate, and finally a metal organic compound is formed on the upper surface of the substrate to form a uniform hook. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic structural view of a metal organic compound chemical vapor deposition apparatus in the prior art; FIG. 2 is a schematic flow chart of a metal organic compound chemical vapor deposition method according to an embodiment of the present invention; 3 is a schematic view showing a gas distribution when the susceptor is not rotated in the embodiment of the present invention; FIG. 4 is a schematic view showing the distribution of the first gas concentration in FIG. 3; FIG. 5 is a schematic view showing the distribution of the second gas concentration in FIG. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 7 is a schematic view showing a susceptor-carrying substrate in an embodiment of the present invention; FIG. 8 is a schematic view showing a first gas distribution in a reaction region in an embodiment of the present invention; FIG. 10 is a schematic structural view of a metal organic compound chemical vapor deposition apparatus in an embodiment of the present invention; FIG. 11 is a schematic diagram of a second air intake apparatus of FIG. 12 is a schematic view of a portion of the second air intake device in the circumferential direction of the embodiment of the present invention; and FIG. 13 is another schematic structural view of the second air intake device of FIG. DETAILED DESCRIPTION OF THE INVENTION The above described objects, features and advantages of the present invention will become more apparent from the detailed description. In the following description, numerous specific details are set forth in order to provide a full understanding of the present invention, but the invention may be practiced otherwise than as specifically described herein. As described in the background section, although vertical, horizontal and hybrid are provided in the prior art (ie providing a group m metal organic source in the vertical direction and a V group hydride source in the horizontal direction)

MOCVD technology, but in the horizontal and hybrid MOCVD technology, the Group III metal organic source is distributed over the entire horizontal surface corresponding to the upper surface of the substrate, and the V-group hydride source is also distributed over the entire horizontal surface corresponding to the upper surface of the substrate. The two gases overlap before reaching the upper surface of the substrate, and inevitably, an early reaction occurs, thereby limiting the growth rate of the film, wasting the group III metal organic source, and increasing the production cost; in the vertical MOCVD technology, The Group III metal organic source and the Group V hydride source are rapidly mixed at the gas inlet, resulting in more gas phase reaction, lowering the reaction rate, and reducing the use efficiency of the Group III metal organic source and increasing the production cost. In view of the above drawbacks, the present invention provides a metal organic compound chemical vapor deposition method and apparatus thereof, wherein the direction in which the first gas is ejected is at an angle of 60 to 120 degrees with respect to the direction in which the second gas is ejected, in the reaction region. The concentration gradient of the first gas and the second gas, the average concentration of the gas in the A region corresponding to the first gas is higher than the average concentration of the gas in the B region, and the average concentration of the gas in the C region corresponding to the second gas is higher than the gas in the D region At the average concentration, the substrate is sequentially passed through the A and C regions arranged at intervals. Since the high distribution area of the first gas (ie, the A area) and the high distribution area of the second gas (ie, the C area) are spaced apart, at least a majority of the first gas can directly reach the upper surface of the substrate without passing through the second gas. That is, at least a majority of the first gas and most of the second gas can reach the upper surface of the substrate, thereby greatly reducing the reaction of the first gas and the second gas before reaching the upper surface of the substrate, thereby improving the efficiency of use of the two reactive gases. Correspondingly, the reaction rate, that is, the deposition rate of the metal organic compound, increases the productivity, and reduces the production cost. The details will be described below with reference to the accompanying drawings. Referring to FIG. 2 and FIG. 3 together, the embodiment provides a metal organic compound chemical vapor phase. Deposition methods, including:

Step SI, providing a pedestal 100 and at least one substrate (not shown in FIG. 3), the susceptor 100 having an upper surface, the substrate being disposed on an upper surface of the pedestal;

Step S2, providing a first air intake device 500 having a plurality of first air outlets for transmitting a first gas, and a second air intake device 600 having a plurality of second air outlets for transmitting a second gas, the first The direction in which the gas is ejected along the first air outlet is at an angle to the direction in which the second gas is ejected along the second air outlet, and the angle of the angle is 60 degrees to 120 degrees;

Step S3, the first gas and the second gas form a reaction region above the substrate, and a metal organic compound is deposited on the upper surface of the substrate.

Referring to FIG. 4, the concentration distribution of the first gas in the reaction region includes an A region and a B region, and the first gas average concentration of the A region is higher than the first gas average concentration of the B region. .

Referring to FIG. 5, the concentration gradient distribution of the second gas in the reaction region includes a C region and a D region, and the second gas average concentration of the C region is higher than the second gas average of the D region. concentration.

Referring back to FIG. 3, the A area is spaced apart from the C area, and the substrate passes through the A area and the C area in sequence. In this embodiment, since the A region of the first gas and the C region of the second gas are spaced apart, at least a majority of the first gas may directly reach the upper surface of the substrate without passing through the second gas, that is, at least a majority of the first gas. And most of the second gas can reach the upper surface of the substrate, thereby greatly reducing the advance reaction of the first gas and the second gas before reaching the upper surface of the substrate, improving the use efficiency of the two reaction gases, and correspondingly increasing the reaction rate. , that is, the deposition rate of metal organic compounds, increased production Can, and reduce production costs.

The discharge direction of the first gas and the discharge direction of the second gas may be at an angle, such as: 60 degrees, 70 degrees, 90 degrees, 100 degrees or 120 degrees. Preferably, the discharge direction of the first gas and the discharge direction of the second gas are perpendicular or approximately vertical. Specifically, referring to FIG. 3, in the embodiment, the discharge direction of the first gas is perpendicular to the discharge direction of the second gas, and the discharge direction of the first gas is perpendicular to the upper surface of the base, and second The direction in which the gas is ejected is parallel to the upper surface of the susceptor.

Referring to FIG. 3, FIG. 4 and FIG. 5, in the embodiment, the A area corresponds to the D area, and the B area corresponds to the C area, that is, a high concentration distribution area of the first gas. Corresponding to the low concentration distribution region of the second gas, the low concentration distribution region of the first gas corresponds to the high concentration distribution region of the second gas. This is because the boundary point between the high concentration distribution region and the low concentration distribution region of the first gas in this embodiment coincides with the boundary point between the low concentration distribution region and the high concentration distribution region of the second gas. However, in other embodiments of the present invention, the boundary between the boundary of the high concentration distribution region and the low concentration distribution region of the first gas and the boundary between the low concentration distribution region and the high concentration distribution region of the second gas may not coincide. A high concentration distribution region of a gas may also correspond to a high concentration distribution region of a portion of the second gas, or a low concentration distribution region of the first gas may correspond to a low concentration distribution region of a portion of the second gas, which does not limit the protection of the present invention. range.

Further, the B region of the first gas may include a zero distribution region, that is, at least a portion of the region corresponding to the C region of the second gas may not include the first gas. Similarly, the D region of the second gas may also include a zero distribution region, that is, at least a portion of the region corresponding to the A region of the first gas may not include the second gas. The larger the proportion of the zero-distribution region in the low-concentration distribution region (ie, the B region or the D region), the smaller the amount of the first gas and the second gas reacted in advance, and the higher the utilization efficiency of the two gases. Referring to FIG. 3, the first gas distribution in the high distribution region (ie, the A region) of the first gas may be uneven due to gas diffusion, and the low distribution region (ie, the B region) of the first gas The first gas distribution may be uneven. Similarly, the second gas distribution in the high distribution region (ie, the C region) of the second gas may also be uneven, and the second gas distribution in the low distribution region (ie, the D region) of the second gas may also be uneven. . The A area is mainly an area corresponding to the first air outlet, and the C area is mainly an area corresponding to the second air outlet. Due to gas diffusion, the concentration of the first gas decreases as the distance from the first air outlet increases, that is, the closer the concentration of the first gas is in the region closer to the first air outlet, the greater the distance The concentration of the first gas in the region where the distance from the gas outlet is farther is smaller. Similarly, the concentration of the second gas decreases as the distance from the second gas outlet increases.

The number of the A area, the B area, the C area, and the D area in the embodiment may range from 4 to 50, such as: 4, 10, 18, 30, or 50. The number or area of each area may be the same or different, and it is determined by the distribution shape and the number of the corresponding air outlets, and the present invention does not limit this. The first gas and the second gas are mainly used for reaction to form a metal organic compound, and the metal organic compound in this embodiment may be a III-V semiconductor compound. At this time, the first gas may include a group III metal organic source, and the second gas includes a group V hydride source; or, the first gas may include a group V hydride source, and the second gas may include Group III metal organic source. Further, the first gas and the second gas may further include a carrier gas or the like.

Preferably, the first gas comprises a Group III metal organic source and the second gas comprises a Group V hydride source. Since the price of the Group III metal organic source is much higher than the price of the Group V hydride source, The vertical flow of the metal organic source to the upper surface of the substrate can greatly reduce the material waste of the group III metal organic source, thereby further reducing the production cost; in addition, since the V group hydride source is an excessive reactant, it is only necessary to control the group III metal organic source. The flow rate can simply and effectively control the reaction rate of the two gases. Specifically, the group III metal organic source may be Ga(CH ₃ ) ₃ , In(CH ₃ ) ₃ , A1(CH ₃ ) ₃ , Ga(C ₂ H ₅ ) ₃ , Zn(C ₂ H ₅ ) ₃ One or more of the gases; the Group V hydride source may be one or more of NH ₃ , PH ₃ , AsH ₃ gases; the carrier gas may be one of hydrogen, nitrogen or an inert gas Kind or more. In the embodiment, the center of the base 100 may be provided with a spindle, and the base 100 may be rotated around the spindle by any rotary driving unit. FIG. 6 shows a schematic diagram of gas distribution when the susceptor 100 is rotated. Referring to FIG. 3 and FIG. 6, when the susceptor 100 rotates, the distribution of the two gases may change slightly due to the rotation of the susceptor 100 (eg, the highest concentration distribution of the two gases in FIG. Right offset), the position of the A area and the C area also change accordingly. However, the distribution trends of the two gases are consistent, so the A region is still spaced from the C region, the A region still corresponds to the D region, and the C region still corresponds to the B region. The average concentration of the first gas in the A region is greater than B. The average concentration of the first gas in the region, the average concentration of the second gas in the C region is greater than the average concentration of the second gas in the D region. The substrate on the susceptor 100 (not shown in FIG. 6) rotates along with the susceptor 100-block. During the rotation of the substrate, the substrate sequentially passes through the A area, the C area, the A area, the C area... ... , that is, the first gas, the second gas, the first gas, the second gas ... will sequentially pass over the substrate. By controlling the rotational speed of the substrate, the area ratio of the A region and the C region, the uniformity of the metal organic compound film deposited by the reaction of the first gas and the second gas on the upper surface of the substrate can be improved. At this time, since the second gas is an excess gas, the uniformity of the reaction rate is determined only by the distribution of the first gas on the substrate, so by adjusting the size and density of the first gas outlet (ie, the flow rate of the first gas), The reaction rate of the first gas and the second gas can be controlled, so that the uniformity of the reaction rate can be easily adjusted in the present embodiment. Referring to FIG. 7, the susceptor 100 may be circular in this embodiment, and a plurality of the substrates 200 are distributed around the mandrel 150 on the susceptor 100. Specifically, the susceptor 100 may include at least one substrate carrier (not shown), and the substrate 200 is disposed on the substrate carrier. The number of substrate carriers is the same as the number of substrates, and the substrate carrier can be rotated about its geometric center.

In the embodiment, the plurality of substrates 200 are carried on the susceptor 100, so that the plurality of substrates 200 can be deposited at the same time, which improves the production efficiency.

It should be noted that the susceptor 100 may have other shapes, and the substrate 200 may also be distributed on the susceptor 100 in other manners, which does not limit the protection scope of the present invention.

Referring to Fig. 8, in the present embodiment, the A region and the B region of the first gas may be radially distributed around the mandrel 150.

Referring to Fig. 9, in the present embodiment, the C region and the D region of the second gas may be radially distributed around the mandrel 150. Specifically, the A region and the B region of the first gas are fan-shaped with the mandrel 150 of the susceptor 100 as a vertex, and the C region and the D region of the second gas are also vertices with the mandrel 150 of the susceptor 100. The fan shape. The size of the sector corresponding to the A area may be the same as or different from the size of the sector corresponding to the B area. The size of the sector corresponding to the A area may be the same as or different from the size of the sector corresponding to the C area. It should be noted that, in other embodiments of the present invention, the entire susceptor 100 may be divided into a plurality of regions, and the A region of the first gas and the C region of the second gas are still in each region. The distribution is performed in the arrangement shown in FIG.

In order to further accelerate the reaction rate of the first gas and the second gas, the substrate 200 may be further subjected to heat treatment to maintain the temperature of the substrate 200 in a temperature range favorable for the reaction of the two gases, which is suitable for the field. The skilled person is well known and will not be described again here. Further, in order to better control the temperature of the substrate 200, the substrate 200 may be subjected to a cooling process. Thereby, in combination with the combined action of heating and cooling, the first gas and the second gas are reacted at a suitable temperature. In this embodiment, the first gas flows vertically to the upper surface of the substrate mainly through a flow convection, and the second gas mainly flows to the upper surface of the substrate through diffusion, and the two gases respectively reach the upper surface of the substrate. Further, the two gases react on the upper surface of the substrate to form a metal organic compound. Since at least a majority of the first gas directly reaches the upper surface of the substrate without passing through the second gas, the reaction of the first gas and the second gas before reaching the substrate is avoided, and the use efficiency of the two reaction gases is improved. It also increases the reaction rate, increases productivity and reduces production costs. Accordingly, referring to FIG. 10, the present invention further provides a metal organic compound chemical vapor deposition apparatus, comprising: a reaction chamber 300;

The susceptor 100 is disposed in the reaction chamber 300. The susceptor 100 has an upper surface, and at least one substrate 200 is disposed on the upper surface of the susceptor 100;

Rotating drive unit 400, connecting the base 100 for rotating the base 100 State

One or more first air intake devices 500, each of which includes a plurality of first air outlets for transmitting a first gas;

One or more second air intake devices 600, each of the second air intake devices 600 includes a plurality of second air outlets for transmitting a second gas;

The first gas and the second gas form a reaction region above the substrate 200, and a metal organic compound is deposited on the upper surface of the substrate;

a concentration gradient distribution of the first gas in the reaction region, including an A region and a B region, wherein the first gas average concentration gas average concentration of the A region is higher than the first gas average concentration of the B region; a concentration gradient distribution of the second gas in the reaction region, including a C region and a D region, the second gas having a higher average concentration than the second region of the D region; The C regions are spaced apart, and the substrate 200 sequentially passes through the A region and the C region.

The point below the second air intake device 600 in Fig. 10 indicates the direction in which the gas flows out from the inside to the outside. In this embodiment, the first gas is supplied through the first air intake device 500, and the second gas is supplied through the second air intake device 600. Since the A region of the first gas and the C region of the second gas are spaced apart, at least most of the A gas can directly reach the upper surface of the substrate without passing through the second gas, that is, at least a majority of the first gas and most of the second gas can reach the upper surface of the substrate, thereby greatly reducing the arrival of the first gas and the second gas. The premature reaction before the upper surface of the substrate increases the efficiency of use of the two reaction gases, and accordingly increases the reaction rate, that is, the deposition rate of the metal organic compound, and increases Capacity, and reduced production costs.

The discharge direction of the first gas and the discharge direction of the second gas may be at an angle, such as: 60 degrees, 70 degrees, 90 degrees, 100 degrees or 120 degrees. Preferably, the discharge direction of the first gas and the discharge direction of the second gas are perpendicular or approximately vertical. Specifically, in the embodiment, the discharge direction of the first gas is perpendicular to the discharge direction of the second gas, and the discharge direction of the first gas is perpendicular to the upper surface of the susceptor, and the discharge direction of the second gas is The upper surface of the base is parallel.

In the embodiment, the A region corresponds to the D region, and the B region corresponds to the C region, that is, the high concentration distribution region of the first gas corresponds to the low concentration distribution region of the second gas, the first gas The low concentration distribution region corresponds to a high concentration distribution region of the second gas. This is because the boundary point between the high concentration distribution region and the low concentration distribution region of the first gas in this embodiment coincides with the boundary point between the low concentration distribution region of the second gas and the high concentration distribution region. However, in other embodiments of the present invention, the boundary between the boundary of the high concentration distribution region and the low concentration distribution region of the first gas and the boundary between the low concentration distribution region and the high concentration distribution region of the second gas may not coincide. A high concentration distribution region of a gas may also correspond to a high concentration distribution region of a portion of the second gas, or a low concentration distribution region of the first gas may correspond to a low concentration distribution region of a portion of the second gas, which does not limit the protection of the present invention. range.

Further, the B region of the first gas may include a zero distribution region, that is, at least a portion of the region corresponding to the C region of the second gas may not include the first gas. Similarly, the D region of the second gas may also include a zero distribution region, that is, at least a portion of the region corresponding to the A region of the first gas may not include the second gas. The larger the proportion of the zero-distribution region in the low-concentration distribution region (ie, the B region or the D region), the smaller the amount of the first gas and the second gas reacted in advance, and the higher the utilization efficiency of the two gases. Due to gas diffusion, the first gas distribution in the high distribution region (ie, the A region) of the first gas may be unevenly branched, and the first gas distribution in the low distribution region (ie, the B region) of the first gas may not Evenly. Similarly, the second gas distribution in the high distribution region (ie, the C region) of the second gas may also be unevenly branched, and the second gas distribution in the low distribution region (ie, the D region) of the second gas may not be distributed. Evenly. The A area is mainly an area corresponding to the first air outlet, and the C area is mainly an area corresponding to the second air outlet. Due to gas diffusion, the concentration of the first gas decreases as the distance from the first gas outlet increases, that is, the concentration of the first gas in the region closer to the first gas outlet is larger, the distance from the first gas The concentration of the first gas in the region where the distance from the gas outlet is farther is smaller. Similarly, the concentration of the second gas decreases as the distance from the second gas outlet increases.

The number of the A area, the B area, the C area, and the D area in the embodiment may range from 4 to 50, such as: 4, 10, 18, 30, or 50. The number or area of each area may be the same or different, and it is determined by the distribution shape and the number of the corresponding air outlets, and the present invention does not limit this. The first gas and the second gas are mainly used for reaction to form a metal organic compound, and the metal organic compound in this embodiment may be a III-V semiconductor compound. At this time, the first gas may include a group III metal organic source, the second gas includes a group V hydride source; or the first gas includes a group V hydride source, and the second gas includes a group III Metal organic source. Further, the first gas and the second gas may further include a carrier gas or the like.

Preferably, the first gas comprises a Group III metal organic source and the second gas comprises a Group V hydride source. Since the price of the Group III metal organic source is much higher than the price of the Group V hydride source, The vertical flow of the metal organic source to the upper surface of the substrate can greatly reduce the material waste of the group III metal organic source, thereby further reducing the production cost; in addition, since the V group hydride source is an excessive reactant, it is only necessary to control the group III metal organic source. The flow rate can simply and effectively control the reaction rate of the two gases.

Specifically, the group III metal organic source may be Ga(CH ₃ ) ₃ , In(CH ₃ ) ₃ , A1(CH ₃ ) ₃ , Ga(C ₂ H ₅ ) ₃ , Zn(C ₂ H ₅ ) ₃ One or more of the gases; the Group V hydride source may be one or more of NH ₃ , PH ₃ , AsH ₃ gases; the carrier gas may be one of hydrogen, nitrogen or an inert gas Kind or more. The susceptor 100 in this embodiment may further include: a heating unit (not shown) for heating the substrate 200 to maintain the temperature of the substrate 200 in a temperature range favorable for the reaction of the two gases. The heating unit may be disposed below the base 100 or integrated within the base 100. Specifically, the heating unit may be a radio frequency heater or a resistance heater, etc., and may be differently selected according to the size and material of the reaction chamber 300.

In addition, in order to better control the temperature of the substrate 200, the chemical vapor deposition apparatus in this embodiment may further include a cooling device disposed at the top of the reaction chamber 300 for lowering the temperature of the first gas or the second gas. Specifically, the cooling device may be cooled by water cooling or air-cooled. The corresponding specific structure is well known to those skilled in the art, and therefore will not be described herein. The first air intake device 500 and the second air intake device 600 in the embodiment may be respectively fixed on the top of the reaction chamber 300. The center of the base 100 may be provided with a mandrel, and the base 100 may be rotated about the mandrel by the rotary drive unit 400. When the susceptor 100 rotates, the distribution of the two gases may change slightly due to the rotation of the susceptor 100 (eg, corresponding FIG. 10 The highest point of the concentration distribution of the two gases can be shifted to the right), and the positions of the A region and the C region also change accordingly. However, the distribution trends of the two gases are consistent, so the A region is still spaced from the C region, the A region still corresponds to the D region, and the C region still corresponds to the B region. The average concentration of the first gas in the A region is greater than B. The average concentration of the first gas in the region, the average concentration of the second gas in the C region is greater than the average concentration of the second gas in the D region. The substrate 200 on the susceptor 100 rotates along with the susceptor 100. During the rotation of the substrate 200, the substrate 200 sequentially passes through the A area, the C area, the A area, the C area, ... A gas, a second gas, a first gas, a second gas ... will sequentially pass over the substrate. By controlling the rotational speed of the substrate, the area ratio of the A region and the C region, the uniformity of the metal organic compound film deposited by the reaction of the first gas and the second gas on the upper surface of the substrate can be improved.

At this time, since the second gas (i.e., the group V hydride source) is an excess gas, the uniformity of the reaction rate is determined only by the distribution of the first gas on the substrate 200, and thus the size and density of the first gas outlet are adjusted. The reaction rate of the first gas and the second gas can be controlled, so that the uniformity of the reaction rate can be easily adjusted in this embodiment.

In the embodiment, the susceptor 100 may be circular, and a plurality of the substrates 200 are distributed around the mandrel on the base 100. Specifically, the susceptor 100 may include at least one substrate carrier (not shown), and the substrate 200 is disposed on the substrate carrier. The number of substrate carriers is the same as the number of substrates. The substrate carrier can be rotated about its geometric center.

It should be noted that the susceptor 100 can also have other shapes, and the substrate 200 can also be used. It is distributed on the base 100 in other ways, which does not limit the scope of protection of the present invention.

In a specific example, the second air intake device 600 is disposed in an intermediate portion of the reaction chamber 300, the second gas flows to an edge region of the reaction chamber 300, and the C region of the second gas is centered on the mandrel. Radial distribution (as shown in Figure 11). The first air outlet of the first air intake device corresponds to a region outside the C region, such that the first gas flows vertically to a region outside the C region, and finally the A region of the first gas is also radially centered on the mandrel. Distribution, and the A area and the C area are arranged at intervals. Specifically, the A region and the B region of the first gas are in a fan shape with the apex of the susceptor 100 as a vertex, and the C region and the D region of the second gas are also scalloped with the apex of the susceptor 100 as a vertex. . The size of the sector corresponding to the A area may be the same as or different from the size of the sector corresponding to the C area.

The horizontal section of the second air guide disk shown in Fig. 11 may be circular. The second air outlet corresponds to the C area of the second gas. The second air intake device 600 may include a second air intake pipe (not shown) and a second air guide disk, and a plurality of second air outlets are disposed on a vertical surface of the second air guide disk. The second gas flows horizontally to the upper surface of the substrate through the second intake pipe, the second air guide pipe, and the second air outlet.

Fig. 12 is a view showing the distribution of the second air outlet 620 after the partial second intake pipe 610 is deployed in the circumferential direction. It should be noted that the second air outlet 620 may be evenly arranged on the second air inlet pipe 610, or may be unevenly arranged. The present invention does not limit this.

Referring to Figure 13, the horizontal section of the second air guide disc may also be a polygonal shape, such as a pentagon. At this time, the A area and the C area are still arranged at intervals.

Similarly, the first air intake device may further include a first air intake pipe and a first air guide disk, and a plurality of first air outlets are disposed on a horizontal surface of the first air guide disk, and the first gas is sequentially The first intake pipe, the first air guide pipe, and the first air outlet are horizontally flowed to the upper surface of the substrate. The first gas The port corresponds to the A region of the first gas.

In this embodiment, the vertical distance between the first air intake device 500 and the upper surface of the substrate 200 and the vertical distance between the second air intake device 600 and the upper surface of the substrate 200 may be the same or different, which does not limit the present invention. The scope of protection.

It should be noted that, in other embodiments of the present invention, the entire pedestal may be divided into a plurality of regions, and the high distribution region of the first gas and the second gas are still high in each region. The distribution area is distributed according to the arrangement shown in FIG. 11 or FIG.

In another specific example, the second air intake device may also be disposed in a peripheral region of the reaction chamber, and the second gas flows to an intermediate portion of the reaction chamber, and details are not described herein.

In this embodiment, by changing the arrangement of the two air intake devices, the first gas flows mainly through the convection to the upper surface of the substrate, and the second gas mainly flows to the upper surface of the substrate through the diffusion, and the two gases respectively reach the base. The upper surface of the sheet, and in turn the two gases react on the upper surface of the substrate to form a metal organic compound. Since at least a majority of the first gas directly reaches the upper surface of the substrate without passing through the second gas, the reaction of the first gas and the second gas before reaching the substrate is avoided, and the use efficiency of the two reaction gases is improved. It also increases the reaction rate, increases productivity, and reduces production costs. Although the invention has been disclosed above in the preferred embodiments, the invention is not limited thereto. Any changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be determined by the scope defined by the claims.

Claims

Rights request

A metal organic compound chemical vapor deposition method, comprising: providing a pedestal and at least one substrate, the pedestal having an upper surface, the substrate being disposed on an upper surface of the pedestal;

2. The metal organic compound chemical vapor deposition method according to claim 1, wherein a direction in which the first gas is ejected along the first air outlet and the second gas along the second The direction in which the air outlet is ejected constitutes an angle of 90 degrees.

The metal organic compound chemical vapor deposition method according to claim 1, wherein the A region corresponds to the D region; and the B region corresponds to the C region.

4. The metal organic compound chemical vapor deposition method according to claim 1, wherein The number of the A area, the B area, the C area, and the D area ranges from 4 to 50.

5 . The metal organic compound chemical vapor deposition method according to claim 1 , wherein a center of the susceptor is disposed with a mandrel, the susceptor rotates around the mandrel, and the pedestal is circular, and more A substrate is distributed around the mandrel on the susceptor.

The metal organic compound chemical vapor deposition method according to claim 5, wherein the A region, the B region of the first gas, or the C region and the D region of the second gas are all in the mandrel Radially distributed for the center.

7. The metal organic compound chemical vapor deposition method according to claim 1, wherein the susceptor comprises at least one substrate carrier, and the substrate is disposed on the substrate carrier.

The metal organic compound chemical vapor deposition method according to claim 7, wherein the substrate carrier rotates around its geometric center.

9. The metal organic compound chemical vapor deposition method according to claim 1, wherein the first gas comprises a Group III metal organic source, and the second gas comprises a Group V hydride source.

10. The metal organic compound chemical vapor deposition method according to claim 9, wherein the group III metal organic source comprises Ga(CH ₃ ) ₃ , In(CH ₃ ) ₃ , A1(CH ₃ ) ₃ , One or more of Ga(C ₂ H ₅ ) ₃ , Zn(C ₂ H ₅ ) ₃ gases; the V-group hydride source includes one or more of NH ₃ , PH ₃ , AsH ₃ gases .

11. The metal organic compound chemical vapor deposition method according to claim 1, wherein the first gas comprises a Group V hydride source, and the second gas comprises a Group m metal organic source.

The metal organic compound chemical vapor deposition method according to claim 11, wherein the group III metal organic source comprises Ga(CH ₃ ) ₃ , In(CH ₃ ) ₃ , A1(CH ₃ ) ₃ , One or more of Ga(C ₂ H ₅ ) ₃ , Zn(C ₂ H ₅ ) ₃ gases; the V-group hydride source includes NH ₃ , PH ₃ , AsH ₃ gas One or more of the bodies.

13. The metal organic compound chemical vapor deposition method according to claim 1, wherein a concentration of the first gas decreases as a distance from the first gas outlet increases.

14. The metal organic compound chemical vapor deposition method according to claim 1, wherein a concentration of the second gas decreases as a distance from the second gas outlet increases.

A metal organic compound chemical vapor deposition apparatus, comprising: a reaction chamber;

a pedestal disposed in the reaction chamber, the pedestal having an upper surface, at least one substrate disposed on an upper surface of the pedestal;

The first gas and the second gas form a reaction region above the substrate, and a layer of a metal organic compound is deposited on the upper surface of the substrate;

a concentration gradient distribution of the first gas in the reaction region, including an A region and a B region, wherein the first gas average concentration of the A region is higher than the first gas average concentration of the B region; the second gas a concentration gradient distribution in the reaction region, including a C region and a D region, the second gas average concentration of the C region being higher than the second gas average concentration of the D region; The A area is spaced apart from the C area, and the substrate passes through the A area and the C area in sequence.

16. The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein a direction in which the first gas is ejected along the first air outlet and the second gas along the second The angle formed by the direction in which the air outlet is ejected is 90 degrees.

The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein the A region corresponds to the D region; and the B region corresponds to the C region.

18. The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein the number of the A region, the B region, the C region, and the D region ranges from 4 to 50.

The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein a center of the base is provided with a mandrel, the base rotates around the mandrel, and the base is circular, and more A substrate is distributed around the mandrel on the susceptor.

The metal organic compound chemical vapor deposition apparatus according to claim 19, wherein the A region, the B region of the first gas, or the C region and the D region of the second gas are all in the mandrel Radially distributed for the center.

21. The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein the susceptor comprises at least one substrate carrier, and the substrate is disposed on the substrate carrier.

22. The metal organic compound chemical vapor deposition apparatus according to claim 21, wherein the substrate carrier rotates around its geometric center.

23. The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein the first gas comprises a Group III metal organic source, and the second gas comprises a Group V hydride source.

24. The metal organic compound chemical vapor deposition apparatus according to claim 23, wherein The cerium metal organic source includes Ga(CH ₃ ) ₃ , In(CH ₃ ) ₃ , A1(CH ₃ ) ₃ , Ga(C ₂ H ₅ ) ₃ , Zn(C ₂ H ₅ ) ₃ gas. One or more of the V group hydride sources include one or more of NH ₃ , PH ₃ , and AsH ₃ gases.

25. The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein the first gas comprises a Group V hydride source, and the second gas comprises a Group III metal organic source.

The metal organic compound chemical vapor deposition apparatus according to claim 25, wherein the group III metal organic source comprises Ga(CH ₃ ) ₃ , In(CH ₃ ) ₃ , A1(CH ₃ ) ₃ , One or more of Ga(C ₂ H ₅ ) ₃ , Zn(C ₂ H ₅ ) ₃ gases; the V-group hydride source includes one or more of NH ₃ , PH ₃ , AsH ₃ gases .

27. The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein a concentration of the first gas decreases as a distance from the first gas outlet increases.

28. The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein the concentration of the second gas decreases as the distance from the second gas outlet increases.

The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein the susceptor has a heating unit for heat-treating the substrate.

30. The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein the first air intake device or the second air intake device is fixed to a top of the reaction chamber.

31. The metal organic compound chemical vapor deposition apparatus according to claim 15, further comprising: a cooling device disposed at a top of the reaction chamber for reducing a temperature of the first gas or the second gas.

The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein the first air intake device comprises a first air intake pipe and a first air guide disk, and a level of the first air guide disk A plurality of first air outlets are disposed on the surface, and the first gas flows out in a direction perpendicular to the upper surface of the substrate through the first air inlet tube, the first air guide tray, and the first air outlet.

33. The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein the second air intake device comprises a second air intake tube and a second air guide tray, and the second air guide tray is vertical A plurality of second air outlets are disposed on the surface, and the second gas flows out in a direction parallel to the upper surface of the substrate via the second air inlet tube, the second air guide tray, and the second air outlet.

34. The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein the second gas inlet device is disposed in an intermediate portion of the reaction chamber, and the second gas flows to an edge region of the reaction chamber.

The metal organic compound chemical vapor deposition apparatus according to claim 15, wherein the second air intake means is disposed in a peripheral region of the reaction chamber, and the second gas flows to an intermediate portion of the reaction chamber.

The metal organic compound chemical vapor deposition apparatus according to claim 33, wherein the second air guide disk has a circular cross section.

37. The metal organic compound chemical vapor deposition apparatus according to claim 33, wherein the second air guide disk has a polygonal cross section.