WO2013157847A1

WO2013157847A1 - Thin film cluster and thin film particle, and manufacturing methods therefor

Info

Publication number: WO2013157847A1
Application number: PCT/KR2013/003243
Authority: WO
Inventors: 이형곤
Original assignee: Lee Hyeong Gon
Priority date: 2012-04-17
Filing date: 2013-04-17
Publication date: 2013-10-24
Also published as: KR20130117335A; KR101343288B1; KR20130117358A

Abstract

The present invention, which comprises two or more of thin film layers separated in the present state by a coated material combined under in-situ conditions and one or more of coated material layers blended between said two or more of thin film layers, relates to: a thin film cluster and a manufacturing method therefor, wherein the thin film, at the first vapor-deposition, has a maximum length at least 100 times greater than the thickness of the thin film layer, and when combined with the coated material, has a thin film cluster of which the length/thickness ratio is greater than or equal to two; and a thin film particle and a manufacturing method therefor, wherein a thin film particle is manufactured by an additional crushing process after removing at least a part of the coated material from the thin film cluster. According to the present invention, all of the problems related to the prior art indicated in the present document such as production of a manufacturing apparatus, and maintenance and repair, contamination of a thin film, wasting of energy and the like are solved.

Description

Thin Film Cluster, Thin Film Particles and Manufacturing Method

The present invention relates to a thin film cluster, a thin film particle produced by a physical vapor deposition method and a method for producing the same.

Physical deposition is also known as dry plating and is one of the thin film formation methods used in a wide variety of fields because it is more environmentally friendly and does not cause pollution compared to wet plating.

Recently, technology for manufacturing a product using nanoparticles or microparticles has been developed in a wide variety of fields.

The fields that require microparticles, their manufacturing methods, and applied products are as follows. As a material for manufacturing the conductive paste, fine particles composed of a composite layer of silver (Ag), copper (Cu) or silver and copper are used, as well as mixed in the bonding paste, paint and ink of an LED chip called a green product. It has established itself as one of the most important materials and technologies for manufacturing pigments, cosmetic raw materials, sunblock particles, color particles, sintered particles, battery active materials, solar cells, thermoelectric devices, insulation devices, catalyst particles, and nanocomposites. have.

The microparticles or nanoparticles are most preferably produced by a dry plating method by a physical vapor deposition process in order to improve the quality and purity and characteristics to be realized. However, the dry plating method by the physical vapor deposition process is mostly made in a vacuum container, the productivity is lowered and the production cost is increased. For this reason, the method of producing fine particles by chemical wet process, rather than the physical vapor deposition method, is used in the production site.

When the microparticles are produced by a physical vapor deposition method for a specific reason, the productivity is very low, and the unit cost of the product is very expensive, and thus the field or product used is extremely limited.

Prior arts for solving the above problems are largely divided into two classes, both of which are unloaded out of a vacuum container after coating a large area or a large number of thin film layers in an in situ (IN SITU) state. The technical summary is possible by pulverizing and manufacturing into a thin film cluster or thin film particles.

The technical analysis is as follows.

First, the first class is to prepare a thin film layer to be obtained in-situ into a large number of multi-layer thin film layer as an aspect such as US Patent 6,398,999 BI granted to Avery Dennison Corporation, and to obtain a thin film cluster or thin film particles using the same. In order to manufacture a large number of multilayer thin films, a plurality of multilayer thin film clusters in which alternating thin film layers and soluble thin film layers to be obtained by depositing a soluble (or releasable) thin film layer between thin film layers and thin film layers by a deposition method are manufactured. After this, it is unloaded to the outside of the vacuum vessel and the first milling of them, and then the thin film particles are obtained by dissolving them in a solvent or a solvent and further grinding them in order to dissolve the soluble thin film layers.

The second class is an aspect like US Patent 4,168,986 granted to Polaroid Corporation, prior to depositing the thin film layer to be obtained, first depositing a soluble (or releasable) thin film layer on a coated substrate in a vacuum vessel and then depositing the thin film layer to be obtained. In order to separate the thin film layer from the coated substrate in an in-situ state, the deposited soluble (or releasable) thin film layer is dissolved in a solvent and separated, and then the coated substrate is moved to the deposition chamber again. It is a method of producing a large amount of thin film particles by repeating the process of depositing the thin film layer to be obtained.

The two types of mass production methods provide the effect of physically evaporating the thin film particles to some extent and reducing the production cost. However, due to the following problems, the two types of mass production methods cannot be applied to the production site. The situation is still not solved.

In the prior art, the first method is a method of sequentially depositing the thin film layer and the soluble thin film layer to be obtained, but simultaneously depositing them in one circulation cycle, so that the soluble thin film layer is separate from the evaporation source for evaporating the thin film layer to be obtained. In addition to a separate evaporation source for evaporation, additional devices such as an evaporation power supply unit for supplying the evaporation energy and / or a separate evaporation shutter (SHUTTER) coupled to a separate augmentation source are needed separately. In addition to the complexity and size of the fabrication and construction, the implementation and operation management of the process becomes very difficult.

A bigger problem is that the two materials must be evaporated simultaneously in one circulation cycle in order to alternate between thin film deposition and soluble thin film deposition to be obtained. Evaporating the two materials at the same time inevitably results in the vapors of the two materials diffusing and interfering with each other in the same vacuum vessel, thus inevitably containing different materials in each thin film layer. This greatly reduces the purity, quality and characteristics of each thin film layer.

As a decisive problem, in addition to the above problems, the soluble thin film layers are mainly formed by using high vapor pressure organic materials. The contamination of the inside of the vacuum vessel, the vacuum pipes, and especially the vacuum pump system by the organic vapors becomes more serious with time. It's going to cause a problem, causing a fatal problem for the whole system.

If such processes cause fatal contamination of the vacuum pump and system by the pollutants, this results in a situation in which the ultimate function of the production equipment is completely stopped. Thus, the first class of methods presents significant problems and challenges related to contamination of the apparatus and the thin film and degradation of thin film properties.

In the second method of the prior art, before depositing the thin film layer to be obtained, first deposit a soluble thin film layer on the substrate to be coated, and then deposit the thin film layer to be obtained on the coated substrate on which the soluble thin film layer is deposited. The film layer to be obtained is desorbed from the to-be-coated substrate by using a designated solvent by transferring to a separation vessel region for the same. Then, the film-coated substrate after the thin film layer is desorbed is transferred back to the deposition region to repeat the deposition and desorption process. It is a method to collect a large amount of thin film particles in a separation vessel in which a desorption process is performed. The thin film particle production method of this method has a good conceptual idea, but has many problems in the process of practical implementation, and it is almost impossible to realize the method. There are serious problems.

In addition, since the two types of mass production methods apply a process of depositing a soluble thin film layer in a vapor state, a heating process up to a high temperature is necessary to increase the vapor pressure of the soluble material. In order to perform the heating process, power must be supplied to an additional heating source, which entails a waste of energy.

The biggest problem is not only to transfer the film-coated substrate to which the thin film deposition is completed to the separation vessel region for desorption of the soluble thin film layer, but also to transfer the film-coated substrate to which the thin film desorption is completed back to the deposition vessel region. Should share the same space as a comparable vacuum atmosphere, even though the degree of vacuum is different. Therefore, the vapors of the solvents used to desorb the soluble thin film layer are diffused to the deposition vessel region to a serious level and act as a source of pollution, causing many problems in a wide variety of parts and regions.

In order to solve the above problems, the present invention provides a thin film cluster manufacturing method and a thin film cluster and the thin film particles produced by the present invention, in order to provide a high productivity and quality improvement in a way that does not cause the above problems. It is possible to manufacture a large number of thin film clusters in the state of sieve, thereby providing a thin film cluster and a thin film manufactured. The method of inserting the coated material between the thin film layer and the thin film layer removes all of the contamination problems caused by the high vapor pressure of each of the above-mentioned materials so that the thin film clusters are mixed with the thin film layers and the coated material without causing the above problems. To provide means for obtaining

The present invention can supply a large amount of thin film clusters and thin film particles produced by a physical vapor deposition method having a very high quality and characteristics and as an environmentally friendly and safe human film production method at an economical price.

As another effect, the size and composition of the vacuum device for manufacturing the thin film cluster and the thin film particles, as well as the manufacturing cost of the equipment itself can be greatly reduced, and thus the economical thin film production with reduced initial investment is possible. Do.

As another effect, in manufacturing the thin film cluster and the thin film particles, the quality of the product itself and the contamination and failure rate of the vacuum device used are greatly reduced, and the manpower and parts purchase cost and waste time required for maintenance and repair are reduced. We can greatly reduce

Figure 1 (a); The coating material 3 and the thin film layer 1 are alternately repeatedly coated on the support base 5

Figure 1 (b); Removed the to-be-coated material 3 in the state of FIG.

Figure 1 (C); In the state shown in Fig. 1 (b), the thin film layer 1 is pulverized one or more times.

Figure 2 (a); A state in which the thin film layer 1 is first deposited on one surface of the coating material 3

Figure 2 (b); In the state of Fig. 2 (a), the thin film layer 1 is pushed into the coating material 3 and mixed.

Figure 2 (C); The thin film layer 1 is secondarily deposited on the to-be-coated material 3 of FIG. 2 (b).

Figure 2 (d); The state in which the thin film layer 1 additionally deposited in Fig. 2 (c) is pushed into the coating material 3 and further mixed.

Figure 2 (e); A state in which the thin film layer 1 is third deposited on the to-be-coated material 3 in FIG.

Figure 2 (bar); The state in which the thin film layer 1 further deposited in Fig. 2 (e) is pushed into the coating material 3 and further mixed.

Figure 2 (g); A state in which the thin film layer 1 is fourth deposited on the to-be-coated material 3 of FIG.

Figure 3 (a); After the coating material 3 is provided on the support base 5, the thin film layer 1 is deposited.

Figure 3 (b); A state in which the thin film layer 1 is separated and collected in a separate space of FIG.

Figure 3 (C); Re-deposited thin film layer 1 on the to-be-coated material 3 of FIG.

Figure 3 (d); A state in which the thin film layer 1 is separated from the one of FIG. 3 (c) and further collected together with the thin film layer 1 collected in FIG. 3 (b) in a separate space.

Figure 3 (e); The thin film layer 1 is again deposited on the to-be-coated material 3 of FIG.

Figure 3 (bar); A state in which the thin film layer 1 is separated from that of FIG. 3 (e) and additionally collected together with the thin film layer 1 collected in FIGS. 3 (b) and (d) in a separate space.

Figure 4 (a); The substrate to be coated (7) is prepared

Figure 4 (b); The thin film layer 1 is deposited on one of the substrates to be coated.

Figure 4 (C); The separator 9 is bonded on the deposited thin film layer

4 (d); The deposited thin film layer and separator are separated from the substrate to be coated at the same time.

Figure 4 (e); The thin film layer 1 is again deposited on the substrate to be coated

Figure 4 (bar); The separator is bonded on the deposited thin film layer

Figure 4 (g); The deposited thin film layer and separator are separated from the substrate to be coated at the same time.

1; thin film layer 3; coating material 5; carrier (support substrate)

7; coating substrate 9; separator

In order to solve the above problems, as in the first aspect of the present invention,

It comprises at least two or more thin film layers present in a state separated from each other by the mixed coating material in the in-situ state and one or more layers of the coating material mixed between the two or more thin film layers, In the thin film layer, the maximum length in the deposited state is 100 times or more than the thickness of the thin film layer, and the thin film layer in the mixed state with the coating material has a length / thickness ratio of 2 or more,

The thin film layer is a thin film layer formed by physical vapor deposition, at least a portion of the thin film layer is formed on the surface of the coated material when deposited, and at least one of the thin film layers is at least one other than the coated material. After being further formed in situ on the thin film layer of the layer is formed by a physical vapor deposition method on at least a portion of the additionally formed coating material, at least a portion of the further formed coating material is phosphorus without being deposited in a vapor state At least one physical force acts on the coated material to cause displacement in a state of having a specified range of viscosity to maintain the fluidity of the material to be coated in a sieve state, and the thickness of the thin film layer is 0.1 nanometer or more and 50 microns or less. The coating material is a fluid material or Is a plastic material, at least one surface material of the coating material has a saturated vapor pressure of 100 torr or less at 25 degrees Celsius and a softening point of 650 degrees or less,

The coating material at the time of coating the thin film layer is thicker than the thickness of the thin film layer, has a viscosity of 10 cps or more, and at least a portion of the coated material mixed between the thin film layers is also subjected to the process of being deposited in a vapor state without fluidity of the material to be coated. The mixing process of the coated material which is mixed in an in-situ state while causing a displacement while maintaining the state, is performed after the thin film layer of at least one layer of the thin film layer is formed on the surface of the coated material. The coating material mixed in the in-situ state is not a method of dissolving the coating material in a solvent, but at least by applying a physical force to the coating material without intervention of the solvent, and finally included in the thin film cluster. At least a portion of the thin film layers is a thin film deposition process step There is provided a thin-film cluster, which is used to be ground to a size of 1/100 or less from the size.

According to another aspect of the present invention

At least two thin film layers present in a state separated from each other by the mixed coating material in an in-situ state, and at least one layer of coating material mixed between the two or more thin film layers, wherein the thin film layer is in a deposited state. In the thin film cluster having a maximum length of at least 100 times the thickness of the thin film layer, and the thin film layer in the state of mixing with the coating material has a length / thickness ratio of 2 or more,

The thin film layer is a thin film layer formed by physical vapor deposition, wherein at least a portion of the thin film layer is formed on the surface of the coated material when it is deposited, and at least one of the thin film layers is different with a portion of the coated material. At least a portion of the remaining portion (or carrier) of the to-be-coated material which is exposed while being separated from the coated material (or carrier) or at least a portion of the coated material additionally supplied to the remaining portion (or carrier) of the-coated material. A thin film layer formed by a physical vapor deposition method in an in -situ state, wherein at least a portion of the additionally provided to-be-coated material maintains fluidity of the material to be coated in an in-situ state without undergoing vapor deposition. At least physically coated material having a viscosity A force applied to cause displacement, and the thickness of the thin film layer is 0.1 nanometer or more and 50 microns or less, the coated material is a flowable material or a plastic material, and at least one surface material of the coated material is at 25 degrees Celsius. The saturated vapor pressure is 100 Torr or less and the softening point is 650 degrees Celsius or less, and the coated material at the time of coating the thin film layer is thicker than the thickness of the thin film layer, has a viscosity of 10 cps or more, and at least a portion of the coated material mixed between the thin film layers. A part of the material to be coated together with one or more layers of the film is separated and collected from another part (or carrier) of the material to be coated together in the in-situ state without undergoing vapor deposition. To be coated between at least the two or more thin film layers The mixing process of the ash is performed in the in situ state after the thin film layers of at least one layer of the thin film layer are formed on the surface of the coated material, and the coated material mixed in the in-situ state is not a method of dissolving the coated material in the solvent, but without intervention of the solvent. The thin film layers are mixed by pulverizing at least one time by applying a physical force to the coated material and the thin film layer, and finally at least a part of the thin film layers included in the thin film cluster is 1/100 of the size in the thin film deposition process step. Provided is a thin film cluster, which is used to be ground to a size below.

According to another aspect of the present invention

It comprises at least two or more thin film layers present in a state separated from each other by the mixed separator in an in-situ state and at least one layer of the mixed material between the two or more thin film layers, the thin film layer is deposited In the thin film cluster having a maximum length of at least 100 times the thickness of the thin film layer, and the thin film layer in the state of mixing with the separation material has a length / thickness ratio of 2 or more,

The thin film layer is a thin film layer formed (coated) by physical vapor deposition, and at least a portion of the thin film layer is formed on a portion of the surface of the substrate to be coated 7 when it is deposited, and the surface of the substrate to be coated. It is formed on a part of and then bonded to the separator 9 in an in-situ state and then separated from the coated substrate together with the separator, wherein at least one layer of the thin film layer is one or more layers first formed on the coated substrate. After the thin film layer is bonded to the separator and separated from the coated substrate together with the separator, the thin film layer is formed on the coated substrate again in an in-situ state and separated, and at least two or more layers of the thin film layers are respectively coated. The time points formed and separated on the substrate are different, and at least some of the surfaces of the substrate to be coated may be More than one layer

The process of forming and separating is repeated at least two times, and the separator is bonded to the thin film layer by being moved by physical force rather than a deposition process in an in-situ state without undergoing vapor deposition. The material is separated from the coated substrate with the thin film layer by a force, and has a viscosity in a range specified to have fluidity at least at the time of bonding with the thin film layer and for a predetermined period, and the adhesive force between the thin film layer and the coated substrate is The thickness of the thin film layer is less than the adhesion between the thin film layer and the separator, the thickness of the thin film layer is 0.1 nanometer or more and 50 microns or less, the separator is a flowable material or a plastic material and at least one surface material has a saturated vapor pressure at 100 degrees Celsius 100 Is less than Thor and the softening point is less than 650 degrees Celsius, At least a part of the mixing process is performed by a physical force rather than a deposition process, and at least a part of the thin film layers included in the thin film cluster is pulverized to 1/100 or less from the size in the thin film deposition process step. It is provided with a thin film cluster, characterized in that used.

The substrate to be coated is a concept different from that of the substrate to be manufactured so that at least a part of the surface has releasability. Although the material to be coated may be a material having releasability, it is also possible to form one or more layers of release on the surface of the substrate to be used. This is to make the process easier when separating the thin film layers deposited on the surface of the substrate to be coated with the separator. Here, the method of imparting release property does not belong to the scope of the present invention, and can be carried out with any known prior art. As a readily available material, a wide variety of materials such as aluminum, aluminum oxide film, silicone resin, silicon oxide film, and teflon may be used, but is not limited thereto.

According to another aspect of the present invention

It comprises at least two or more thin film layers that are separated from each other by the mixed coating material in the in-situ state and at least one layer of the coating material mixed between the two or more thin film layers, the thin film layer is deposited In the thin film cluster manufacturing method in which the maximum length at is 100 times or more than the thickness of the film layer, and the thin film layer in the mixed state with the coating material has a length / thickness ratio of 2 or more.

The manufacturing method includes preparing at least one coating material (s) and preparing at least one coating material (s) and loading the coating material (s) and coating material (s) into a vacuum container. And coating at least one thin film layer made of the coating material (s) on at least a portion of the coated material (s) and formed by a physical vapor deposition method, and at least a portion of the at least one thin film layer coated in the step a. At least one thin film layer of the coating material (s) is further coated on at least a portion of the coated material further formed in step b, step b or b2 to form (move) or move the coated material further on the top surface of the substrate. Step a2, step b2 to form (or move) the additional coating material on the upper surface of at least a portion of the at least one thin film layer coated in the step a2, b2 from step a2 It includes the r step of repeating the process to the system two or more times, wherein the coating material is a flowable material or a plastic material while at least one surface of the material has a saturated vapor pressure of less than 100 Torr at 25 degrees Celsius and the softening point is Celsius 650 degrees or less, at least in the steps b and b2, when additionally coated material is formed (moved or formed), the coated material does not undergo vapor deposition and has a specified range of viscosity to maintain fluidity of the coated material. At least in the state having a physical force acting on the coated material is formed to cause a displacement,

The steps a, b, a2, b2 and r are all performed in-situ, and the mixing process of the coated material mixed between at least two thin film layers is characterized in that at least one of the thin film layers of the thin film layer is formed on the surface of the coated material. It is formed in the in-situ state after the formation, the coating material mixed in the in-situ state is not a method of dissolving the coating material in the solvent, but at least by physically applying the physical force to the coating material without the intervention of the solvent, at least the thin film coating The coated material at the time point is thicker than the thickness of the thin film layer, there is provided a thin film cluster manufacturing method, characterized in that to maintain a viscosity of 10 cps or more.

According to another aspect of the present invention

It comprises at least two or more thin film layers that are separated from each other by the mixed coating material in the in-situ state and at least one layer of the coating material mixed between the two or more thin film layers, the thin film layer is deposited In the thin film cluster manufacturing method in which the maximum length at is 100 times or more than the thickness of the thin film layer, and the thin film layer in the mixed state with the coating material has a length / thickness ratio of 2 or more.

The manufacturing method includes the steps of preparing a coating material, preparing at least one coating material, loading the coating material and the coating material into a vacuum container, and at least a portion of the coating material (s) on the coating material (s). (A) coating at least one thin film layer formed of a physical vapor deposition method and at least a portion of the at least one thin film layer coated at the step a and the coated material from the coated material (or carrier) the step S of supplying the additional coating material in the in-situ state to the remaining portion or carrier of the coating material remaining after the step d, the step d (or d3), the at least a portion of the additional coating material additionally supplied in the step S A3 step of coating at least one thin film layer consisting of a coating material (s), at least one thin film layer coated in the step a3 and the D3 step of separating at least a portion of the coating material from the coated material (or carrier), r step of repeating the steps from the step S to the step a3, d3 more than once, wherein the coated material is fluid The material or plastic material and at least one surface of the material has a saturated vapor pressure of less than 100 Torr at 25 degrees Celsius and a softening point of less than 650 degrees Celsius, and the coating material mixed with the thin film layers in the in-situ state works in an in-situ state. The position is changed by moving for at least a predetermined period in a state of maintaining fluidity at least once, and when the additional coating material is supplied in the step S, the coated material maintains the fluidity of the coated material without undergoing a process of being deposited in a vapor state. At least a physical force acts on the coated material in a state having a viscosity in the specified range. Is to supply displacement,

The steps a, d, S, a3, d3 and r are all made in situ,

The mixing process of the coated material mixed between at least two thin film layers is performed in an in-situ state after the thin film layers of at least one of the thin film layers are formed on the surface of the coated material, and the coated material mixed in the in-situ state is The coating material is not dissolved in a solvent but is mixed by pulverizing the thin film layers at least once by applying physical force to the coated material and the thin film layer without intervention of the solvent, and at least the coated material at the time of coating the thin film layer is the thin film layer. It is thicker than the thickness of the thin film cluster is provided, characterized in that to maintain a viscosity of 10 cps or more.

According to another aspect of the present invention

It comprises at least two or more thin film layers present in a state separated from each other by the mixed separator in an in-situ state and at least one layer of the mixed material between the two or more thin film layers, the thin film layer is deposited In the thin film cluster manufacturing method in which the maximum length at is 100 times or more than the thickness of the thin film layer, and the thin film layer in the mixed state with the separating material has a length / thickness ratio of 2 or more.

The manufacturing method includes preparing a substrate to be coated, preparing at least one coating material, preparing at least one separation material, and installing or loading the coating material, the coating material, and the separation material into a vacuum container. And a step of coating at least one thin film layer made of the coating material (s) on at least a portion of the substrate to be coated and formed by a physical vapor deposition method, and the at least one thin film layer coated in the step a and the separation Bonding the ashes to each other, separating the thin film layer and the separating material bonded to each other in the coated substrate from the coated substrate, and the coated substrate having at least a portion of the surface exposed after the m (or m5). A5 step of coating at least one thin film layer made of the coating material (s) on at least a portion of and formed by a physical vapor deposition method, the a5 L5 step of bonding one or more layers of the thin film layer and the separator coated on each other in the system, the m5 step of separating the thin film layer and the separator material bonded to each other in the l5 step from the coating substrate, step l5 to step l5, m5 The step a, l, m, a5, l5, m5, and r are all performed in an in situ state, and are mixed with the thin film layer in an in situ state. Separation material is a mixture by applying a physical force without the intervention of the solvent, the thin film layer and the separation material is pulverized at least one or more times in the mixing process, the adhesive strength of the thin film layer and the coated substrate is the thin film layer and the separation material It is smaller than the adhesive force with and the separator is not a vapor deposition process in the in-situ state without the process of being deposited in the vapor state physical A material having a viscosity in a specified range to be moved by force and bonded to the thin film layer, and also separated from the coated substrate together with the thin film layer by physical force, to have fluidity at least at the time of bonding with the thin film layer and for a specified period of time. The adhesive force between the thin film layer and the coated substrate is smaller than the adhesive force between the thin film layer and the separator, and the average thickness of the separator is thicker than the average thickness of the thin film layer, and the thickness of the thin film layer is 0.1 nanometer or more. 50 micron or less, the separation material is a flowable or plastic material, at least one surface material is a saturated vapor pressure of less than 100 torr at 25 degrees Celsius and a softening point of less than 650 degrees Celsius, the process of mixing with the thin film layer At least a part of it is not a deposition process but a physical force Which will lure, at least a portion of the thin film layer contained in the thin film is a cluster is provided a thin film manufacturing method, it characterized in that the cluster is used by crushing to a size of less than 1/100 from the size of the thin film deposition process step.

According to another aspect of the present invention

The coated material is a thin film cluster manufacturing method, characterized in that the room temperature fluidity material. In addition, the coated material may be a thermoplastic material, and may be an aspect of the present invention even if it is in a molten state by heating to impart fluidity for a predetermined period of time in an in situ state. The to-be-coated material may be in a state where at least a part thereof is provided on the support base, and may be manufactured to have a shape designated as a free-standing state as a thermoplastic material.

According to another aspect of the present invention

At least a portion of the to-be-coated material additionally supplied in steps b, b2, and S is not transferred and supplied from another place, but the coated thin film layer (s) is lower than the thin film layer (s) while causing displacement. Provided is a method for manufacturing a thin film cluster, characterized in that the part to be coated is a new material to be supplied while being exposed. According to another aspect of the present invention, the method for additionally forming the coated material in the step b is a method of adding the coated material on the thin film layer coated in the step a and the coating material existing under the coated thin film layer in the step a There is provided a thin film cluster manufacturing method, characterized in that at least one selected from the method of moving a portion to the top of the coated thin film layer in step a.

According to another aspect of the present invention

The pulverization process is performed in an in situ state, wherein at least one thin film layer is further formed on the coated material mixed with the pulverized thin film layer during a specified period of time from the start to the end of the pulverization process. Cluster production methods are provided. In this case, the in-situ state means a state in which the thin film process is performed in a vacuum container, that is, a state in which the coated material or the thin film layers stay in the vacuum container before being taken out at atmospheric pressure.

According to another aspect of the present invention

Thin film particles are provided by removing at least a portion of the material to be coated from the thin film cluster and further grinding to a specified size.

According to another aspect of the present invention

In the thin film cluster manufacturing method further comprises the step of further unloading the thin film cluster to the outside of the vacuum container, removing at least a portion of the coating material and further pulverizing further to a specified size. A manufacturing method is provided. Of course, all the thin film particles obtained in the present invention can be provided through further analysis and classification step according to the particle size according to the known art.

According to another aspect of the present invention, at least a portion of the thin film layer is provided with a thin film cluster manufacturing method, characterized in that the thin film layer of a multi-layer structure including at least two or more different materials. For example, a method of manufacturing a thin film cluster, characterized in that the chemical stability of at least one layer included in the thin film layer is greater than the chemical stability of the other layer.

According to another aspect of the present invention

At the time when the thin film layer is deposited, the surface of the coated material includes a depression and / or a protrusion formed three-dimensionally in at least two places in a specified shape, and at least a part of the thin film layer (s) is three-dimensionally shaped. Provided is a thin film cluster manufacturing method characterized in that it is formed as.

According to another aspect of the present invention

The thin film layer is provided with a thin film cluster, wherein the thin film layer has a multi-layer structure and the outer surface thin film layer has a higher chemical stability than at least one other thin film layer.

According to another aspect of the present invention

At least one of the thin film layers is provided with a thin film cluster, characterized in that the thin film having a UV blocking characteristic (absorption and / or reflection function).

According to another aspect of the present invention

At least a portion of the thin film layer is provided with a thin film cluster, characterized in that the ceramic material.

According to another aspect of the present invention

At least a portion of the thin film layer is provided with a thin film cluster, characterized in that the cosmetic material or a color material.

According to another aspect of the present invention

At least a portion of the thin film layer is provided with a thin film cluster, characterized in that the conductive metal or heat conductive material.

According to another aspect of the present invention

At least a portion of the thin film layer is provided with a thin film cluster, characterized in that the ratio of (length / width) is 10 or more and is in the form of a band having an elongated band or a cross section of a specified shape. Thin films of this type are nanoscale or micronscale in width and length, which are more useful structures in the industry, and may be made of nanowires or the like.

According to another aspect of the present invention

The coated material is provided on at least one surface of a designated carrier (supporting substrate), the carrier (supporting substrate) is provided with a thin film cluster manufacturing method, characterized in that the film, roll or circulation belt.

In describing the manufacturing method of the present invention, since each step is described as being distinguished, such as step a, step b, step d, etc., it is understood that each time point is implemented in a form that is distinguished in time. Although it may be possible, it is more preferable that the steps can be carried out cyclically and repeatedly at the same time in each stepwise execution region in which the steps are sequentially arranged. As a form for carrying out such a process, as described above, the coating material is provided on at least one surface of a designated carrier, and a long film form, a roll or a circulation belt form in which the carrier is rotated may be introduced. But it is not limited thereto.

The thin film cluster or thin film particles or thin film clusters or thin film particles having a multi-layer structure including three or more layers of the thin film cluster or thin film particles and other materials may be a cosmetic material, a pigment, a paint, a medical material, an electronic material, a catalyst particle or a battery. It is a structure that can be applied in a wide variety of fields such as active materials. In addition, as a very useful form of the thin film, a thin film cluster or a thin film particle, characterized in that the electrical conductivity or thermal conductivity of at least one layer is greater than that of another layer. This structure can be applied to a wide variety of electrical connection means, such as mounting or wiring of electronic electrical components.

In the thin film cluster or the thin film particles provided in the present invention, at least a portion of each of the thin film layers may be separated from each other without a separate solvent so that the relative position of the thin film cluster or the thin film particles may be changed during a designated period of time at the designated time. . As described above, the to-be-coated material may be selected from a flowable material or a plastic material, and the saturated vapor pressure may be sufficiently low so as not to interfere with the formation of the physical vapor deposition thin film.

As used herein, the word "mixing" refers to a state in which materials including a thin film layer, a coating material, and one or more thin film layers are additionally stacked as shown in FIG. 1 (a), and FIGS. 2 (g) and 3 (bar). As used in this paper, it is meant to include all of the states that are mixed together in a disordered state. When the maximum length in the state in which the thin film layer is initially deposited is 100 times or less than the thickness of the thin film layer, the quality may be improved, but the productivity may be excessively degraded, and thus economical, and the thin film layer in the mixed state with the coating material When the length / thickness ratio is less than 2, the thin film particles to be provided in the present invention cannot be produced because they are almost nanoparticles rather than thin films.

In addition, the thin film produced by the wet thin film plating method is not only environmentally friendly, but also the purity of the thin film itself is a problem, so the thin film layer is required to be formed by physical vapor deposition. In order to maintain the thin film (THIN FILM) form, thin film lamination is required to be formed depending on the shape of the surface to be coated.

In order to produce a large amount of thin film layers having a specified thickness, it is necessary to mix the coating material to distinguish between the thin film layer and the thin film layer in an in-situ state, but it is important that the mixing of the coating material does not go through the vapor state. This is because when the vapor phase is mixed and deposited by the thin film layer and the thin film layer is mixed, the vapors of the different materials are diffusely mixed and act as contaminants to each other, which may cause serious degradation of the purity and quality of the thin film. In addition, as described above, it causes a lot of problems such as contamination of the vacuum apparatus and components and improvement of manufacturing cost.

Therefore, in order to mix the coating material between the thin film layer and the thin film layers without passing through the vapor state, the coated material uses a flowable material or a plastic material, and the thin film layer and the thin film layer are separated from each other by appropriately using such material properties. To be deposited. When the coated material is a flowable material, in particular, a room temperature flowable material, heating is not necessary at all, and thus a very convenient process may be performed.

However, in order for the thin film layer to have a three-dimensional shape or a specified shape, precise shape control may be restricted when the coated material is a flowable material. In this case, the imprinting method using a heating fluid material or a thermoplastic material can be used to imprint the three-dimensional shape of the thin film to be manufactured on the surface of the coated material by using a heated mold. As a result, a thin film corresponding to the three-dimensional shape provided in the mold may be produced.

The coated material that can flow in this way can be mixed using the mechanical force between the thin film layers without the process of vapor deposition using the evaporation process by using a mechanical force to the vapor molecules pointed out above. It is possible to provide a thin film cluster manufactured in a state where all cross contamination problems or additionally generated problems are solved.

It is a matter of course that mixing is performed with at least one layer of the thin film layer only after the thin film of at least one layer of the thin film layer is formed on the surface of the coating material, and high productivity is maintained in the in situ state.

It is obvious that at least one or more of the thin film layers may be formed on the surface of the coated material after the coating material is additionally formed on the at least one thin film layer in an in-situ state. It should be formed by a physical vapor deposition method to satisfy the object of the present invention as described above.

The coating material does not use a process of evaporating by heating, but the lower the saturated steam pressure is at least at room temperature in a vacuum apparatus. The smaller the saturated vapor pressure is, the more preferable among the substances having a saturated vapor pressure of 100 Torr or less at least in a room temperature in a vacuum apparatus. In the case of using a material of more than 100 torr as a coating material, there is a difference depending on the configuration and characteristics of the physical vapor deposition apparatus, but it can cause a fatal problem due to the effect that the vapor of the coating material interferes or contaminates the thin film layer formation.

Since the coated material requires a process of moving by applying physical force for at least a specified period in an in-situ state, it is necessary to use a flowable material or a plastic material, and a softening point at which the coated material softens to a movable state is Lower is preferable.

However, in order to broaden the range of material to be coated material, the softening point is preferably 650 degrees Celsius or less. In the case of using a coating material having a higher softening point, not only does it consume a lot of energy to raise the temperature to the softening point, but the configuration of the physical vapor deposition apparatus also requires a very complicated and difficult structure and material to handle the high temperature coating material. Because it is.

The coated material at the time of coating the thin film layer is required to be thicker than the thickness of the thin film layer. In order to form the thickness of the coated material to be thinner than the thickness of the thin film layer, a physical vapor deposition method should be used. The formation of the coated material layer using the physical vapor deposition method is not only a method beyond the scope of the present invention, This is because the configuration of the physical vapor deposition apparatus becomes very complicated and requires a complicated process.

In the in situ state, the mixed material to be coated is required to contain no solvent. This is because most solvents have a high vapor pressure that not only contaminates the vacuum atmosphere in the vacuum system but also adversely affects many components including the vacuum pump. Therefore, the coating material is required to move and cause the displacement and mixing with the thin film layers in the absence of the intervention of the solvent.

Finally, at least a portion or more of the thin film layers included in the thin film cluster is used to be pulverized to a size of 1/100 or less from the size in the deposition process step, but a part of such a crushing process may be performed in-situ. If necessary, it may be carried out using a pulverizing and sorting device after being taken out of the vacuum container.

When the viscosity of the coating material is 10 cps or less, the thin film layer is difficult to maintain the thin film form of the specified conditions in the deposited state, the thickness also needs to fall within a certain range.

When the thickness of the thin film layer is less than 0.1 nanometer, it is difficult to maintain the shape of the thin film layer. When the thickness of the thin film layer is 50 microns or more, the thin film layer is not only difficult to crush into fine thin films, but also waste of materials and excessive thin film deposition costs. The thin film cluster obtained under such conditions is for producing thin film particles in a state of being pulverized to a size of 1/100 or less than the area at the time of being deposited in-situ or unloaded out of the vacuum container.

According to the thin film cluster, the thin film and the manufacturing method of the present invention, a bonding paste of an LED chip called a microparticle or green product composed of a composite layer of silver (Ag), copper (Cu) or silver and copper as a material for manufacturing a conductive paste Pigments, cosmetic raw materials, pigments, sunblock particles, color tone particles, sintered particles, battery active materials, solar cells, thermoelectric devices, insulating devices, catalyst particles, nanocomposites, etc. Provide materials and technology.

Claims

It comprises at least two or more thin film layers present in a state separated from each other by the mixed coating material in the in-situ state and one or more layers of the coating material mixed between the two or more thin film layers, In the thin film layer, the maximum length in the deposited state is 100 times or more than the thickness of the thin film layer, and the thin film layer in the mixed state with the coating material has a length / thickness ratio of 2 or more,

The thin film layer is a thin film layer formed by physical vapor deposition, at least a portion of the thin film layer is formed on the surface of the coated material when deposited, and at least one of the thin film layers is at least one other than the coated material. After being further formed in situ on the thin film layer of the layer is formed by a physical vapor deposition method on at least a portion of the additionally formed coating material, at least a portion of the further formed coating material is phosphorus without being deposited in a vapor state At least one physical force acts on the coated material to cause displacement in a state of having a specified range of viscosity to maintain the fluidity of the material to be coated in a sieve state, and the thickness of the thin film layer is 0.1 nanometer or more and 50 microns or less. The coating material is a fluid material or Is a plastic material, at least one surface material of the coating material has a saturated vapor pressure of 100 torr or less at 25 degrees Celsius and a softening point of 650 degrees or less,

The coating material at the time of coating the thin film layer is thicker than the thickness of the thin film layer, has a viscosity of 10 cps or more, and at least a portion of the coated material mixed between the thin film layers is also subjected to the process of being deposited in a vapor state without fluidity of the material to be coated. The mixing process of the coated material which is mixed in an in-situ state while causing a displacement while maintaining the state, is performed after the thin film layer of at least one layer of the thin film layer is formed on the surface of the coated material. The coating material mixed in the in-situ state is not a method of dissolving the coating material in a solvent, but at least by applying a physical force to the coating material without intervention of the solvent, and finally included in the thin film cluster. At least a portion of the thin film layers is a thin film deposition process step Thin-film cluster, characterized in that used to grind to the size of less than 1/100 from
At least two thin film layers present in a state separated from each other by the mixed coating material in an in-situ state, and at least one layer of coating material mixed between the two or more thin film layers, wherein the thin film layer is in a deposited state. In the thin film cluster having a maximum length of at least 100 times the thickness of the thin film layer, and the thin film layer in the state of mixing with the coating material has a length / thickness ratio of 2 or more,

The thin film layer is a thin film layer formed by physical vapor deposition, wherein at least a portion of the thin film layer is formed on the surface of the coated material when it is deposited, and at least one of the thin film layers is different with a portion of the coated material. At least a portion of the remaining portion (or carrier) of the to-be-coated material which is exposed while being separated from the coated material (or carrier) or at least a portion of the coated material additionally supplied to the remaining portion (or carrier) of the-coated material. A thin film layer formed by a physical vapor deposition method in an in-situ state, wherein at least a portion of the additionally provided to-be-coated material maintains fluidity of the material to be coated in an in-situ state without undergoing vapor deposition. Physically at least on the coated material in a state having a viscosity A force applied to cause displacement, and the thickness of the thin film layer is 0.1 nanometer or more and 50 microns or less, the coated material is a flowable material or a plastic material, and at least one surface material of the coated material is at 25 degrees Celsius. The saturated vapor pressure is 100 Torr or less and the softening point is 650 degrees Celsius or less, and the coating material at the time of coating the thin film layer is thicker than the thickness of the thin film layer, has a viscosity of 10 cps or more, and at least a portion of the coated material mixed between the thin film layers. A part of the material to be coated together with one or more layers of the film is separated and collected from another part (or carrier) of the material to be coated together in the in-situ state without undergoing vapor deposition. To be coated between at least the two or more thin film layers The mixing process of the ash is performed in the in situ state after the thin film layers of at least one layer of the thin film layer are formed on the surface of the coated material, and the coated material mixed in the in-situ state is not a method of dissolving the coated material in the solvent, but without intervention of the solvent. The thin film layers are mixed by pulverizing at least one time by applying a physical force to the coated material and the thin film layer, and finally at least a part of the thin film layers included in the thin film cluster is 1/100 of the size in the thin film deposition process step. Thin-film cluster, characterized in that it is used by grinding to the following size
It comprises at least two or more thin film layers present in a state separated from each other by the mixed separator in an in-situ state and at least one layer of the mixed material between the two or more thin film layers, the thin film layer is deposited In the thin film cluster having a maximum length of at least 100 times the thickness of the thin film layer, and the thin film layer in the state of mixing with the separation material has a length / thickness ratio of 2 or more,

The thin film layer is a thin film layer formed (coated) by physical vapor deposition, and at least a portion of the thin film layer is formed on a portion of the surface of the substrate to be coated 7 when it is deposited, and the surface of the substrate to be coated. It is formed on a part of and then bonded to the separator 9 in an in-situ state and then separated from the coated substrate together with the separator, wherein at least one layer of the thin film layer is one or more layers first formed on the coated substrate. After the thin film layer is bonded to the separator and separated from the coated substrate together with the separator, the thin film layer is formed on the coated substrate again in an in-situ state and separated, and at least two or more layers of the thin film layers are respectively coated. The time points formed and separated on the substrate are different, and at least some of the surfaces of the substrate to be coated may be More than one layer

The process of forming and separating is repeated at least two times, and the separator is bonded to the thin film layer by being moved by physical force rather than a deposition process in an in-situ state without undergoing vapor deposition. The material is separated from the coated substrate with the thin film layer by a force, and has a viscosity in a range specified to have fluidity at least at the time of bonding with the thin film layer and for a predetermined period, and the adhesive force between the thin film layer and the coated substrate is The thickness of the thin film layer is less than the adhesion between the thin film layer and the separator, the thickness of the thin film layer is 0.1 nanometer or more and 50 microns or less, the separator is a flowable material or a plastic material and at least one surface material has a saturated vapor pressure at 100 degrees Celsius 100 Is less than Thor and the softening point is less than 650 degrees Celsius, At least a part of the mixing process is performed by a physical force rather than a deposition process, and at least a part of the thin film layers included in the thin film cluster is pulverized to 1/100 or less from the size in the thin film deposition process step. Thin film cluster, characterized in that used to
It comprises at least two or more thin film layers that are separated from each other by the mixed coating material in the in-situ state and at least one layer of the coating material mixed between the two or more thin film layers, the thin film layer is deposited In the thin film cluster manufacturing method in which the maximum length at is 100 times or more than the thickness of the film layer, and the thin film layer in the mixed state with the coating material has a length / thickness ratio of 2 or more.

The manufacturing method includes preparing at least one coating material (s) and preparing at least one coating material (s) and loading the coating material (s) and coating material (s) into a vacuum container. And coating at least one thin film layer made of the coating material (s) on at least a portion of the coated material (s) and formed by a physical vapor deposition method, and at least a portion of the at least one thin film layer coated in the step a. At least one thin film layer of the coating material (s) is further coated on at least a portion of the coated material further formed in step b, step b or b2 to form (move) or move the coated material further on the top surface of the substrate. Step a2, step b2 to form (or move) the additional coating material on the upper surface of at least a portion of the at least one thin film layer coated in the step a2, b2 from step a2 And the step r repeating the process up to at least two times, wherein the coated material is a fluid or a plastic material and at least one surface of the material has a saturated vapor pressure at 25 degrees Celsius or less and a softening point. Viscosity of not more than 650 degrees Celsius, and at least in the b and b2 steps, when additionally coated material is formed (moved or formed), the coated material maintains fluidity of the coated material without undergoing vapor deposition. At least in the state having a physical force acting on the coated material is formed causing a displacement,

The steps a, b, a2, b2 and r are all performed in-situ, and the mixing process of the coated material mixed between at least two thin film layers is characterized in that at least one of the thin film layers of the thin film layer is formed on the surface of the coated material. It is formed in the in-situ state after the formation, the coating material mixed in the in-situ state is not a method of dissolving the coating material in the solvent, but at least by physically applying the physical force to the coating material without the intervention of the solvent, at least the thin film coating The coated material at the time point is thicker than the thickness of the thin film layer, thin film cluster manufacturing method characterized in that to maintain a viscosity of 10 cps or more
It comprises at least two or more thin film layers that are separated from each other by the mixed coating material in the in-situ state and at least one layer of the coating material mixed between the two or more thin film layers, the thin film layer is deposited In the thin film cluster manufacturing method in which the maximum length at is 100 times or more than the thickness of the thin film layer, and the thin film layer in the mixed state with the coating material has a length / thickness ratio of 2 or more.

The manufacturing method includes the steps of preparing a coating material, preparing at least one coating material, loading the coating material and the coating material into a vacuum container, and at least a portion of the coating material (s) on the coating material (s). (A) coating at least one thin film layer formed of a physical vapor deposition method and at least a portion of the at least one thin film layer coated at the step a and the coated material from the coated material (or carrier) the step S of supplying the additional coating material in the in-situ state to the remaining portion or carrier of the coating material remaining after the step d, the step d (or d3), the at least a portion of the additional coating material additionally supplied in the step S A3 step of coating at least one thin film layer consisting of a coating material (s), at least one thin film layer coated in the step a3 and the Step d3 for separating at least a portion of the coating material from the coated material (or carrier), and the step r to repeat the steps from the step S to the step a3, d3 at least two times, the coated material is At least one surface material, which is a fluid or a plastic material, has a saturated vapor pressure of 100 torr or less at 25 degrees Celsius and a softening point of 650 degrees or less, and the coating material mixed with the thin film layers in the in situ state is in the in situ state. The position is changed by moving for at least a predetermined period of time in a state of maintaining fluidity at least once, and when the additional coating material is supplied in the step S, the coated material does not undergo the process of being deposited in a vapor state, and the flowability of the coated material is maintained. At least the physical force applied to the coated material in a state having a specified range of viscosity to maintain Acting and causing displacement,

The steps a, d, S, a3, d3 and r are all made in situ,

The mixing process of the coated material mixed between at least two thin film layers is performed in an in-situ state after the thin film layers of at least one of the thin film layers are formed on the surface of the coated material, and the coated material mixed in the in-situ state is The coating material is not dissolved in a solvent but is mixed by pulverizing the thin film layers at least once by applying physical force to the coated material and the thin film layer without intervention of the solvent, and at least the coated material at the time of coating the thin film layer is the thin film layer. It is thicker than the thickness of the thin film cluster manufacturing method, characterized in that to maintain a viscosity of 10 cps or more
It comprises at least two or more thin film layers present in a state separated from each other by the mixed separator in an in-situ state and at least one layer of the mixed material between the two or more thin film layers, the thin film layer is deposited In the thin film cluster manufacturing method in which the maximum length at is 100 times or more than the thickness of the thin film layer, and the thin film layer in the mixed state with the separating material has a length / thickness ratio of 2 or more.

The manufacturing method includes preparing a substrate to be coated, preparing at least one coating material, preparing at least one separation material, and installing or loading the coating material, the coating material, and the separation material into a vacuum container. And a step of coating at least one thin film layer made of the coating material (s) on at least a portion of the substrate to be coated and formed by a physical vapor deposition method, and the at least one thin film layer coated in the step a and the separation Bonding the ashes to each other, separating the thin film layer and the separating material bonded to each other in the coated substrate from the coated substrate, and the coated substrate having at least a portion of the surface exposed after the m (or m5). A5 step of coating at least one thin film layer made of the coating material (s) on at least a portion of and formed by a physical vapor deposition method, the a5 L5 step of bonding one or more layers of the thin film layer and the separator coated on each other in the system, the m5 step of separating the thin film layer and the separator material bonded to each other in the l5 step from the coating substrate, step l5 to step l5, m5 The step a, l, m, a5, l5, m5, and r are all performed in an in situ state, and are mixed with the thin film layer in an in situ state. The separator is mixed by applying a physical force without the intervention of the solvent, the thin film layer and the separator is pulverized at least one or more times in the mixing process, the separator is deposited in-situ without going through the process of vapor deposition The film-coated group is bonded to the thin film layer by moving by physical force, not by process, and also with the thin film layer by physical force. A substance having a viscosity in a range specified to have fluidity at least when bonded to the thin film layer and for a specified period of time, wherein the adhesive force between the thin film layer and the coated substrate is less than the adhesive force between the thin film layer and the separator; The average thickness of the separator is thicker than the average thickness of the thin film layer, and the thickness of the thin film layer is 0.1 nanometer or more and 50 microns or less, and the separator is a fluid material or a plastic material and at least one surface material is at 25 degrees Celsius. Saturated vapor pressure of less than 100 Torr and the softening point is less than 650 degrees Celsius, at least a part of the process of mixing with the thin film layer is a combination of the process is a physical force, not a deposition process, the thin film layer included in the thin film cluster At least some of them may be Thin-film cluster manufacturing method characterized in that it is used to grind to the size of less than 1/100 from the size
The method according to any one of claims 4 to 6, wherein the coated material or the separator is a fluid material at room temperature.
At least a part of the coated material additionally supplied in steps b, b2, and S of claim 4 or 5 is not transferred and supplied from another place, but the coated thin film layer (s) is subjected to displacement. Thin film cluster manufacturing method characterized in that the coating material is newly supplied while exposing a portion of the coating material in the lower portion of the thin film layer (s) while causing
6. The method of claim 5, wherein the grinding process is performed in situ, wherein at least one thin film layer is further formed on the coated material mixed with the ground thin film layer during a designated period of time from the start to the end of the grinding process. Thin Film Cluster Manufacturing Method
The method of claim 4, wherein at least a portion of the coated material or the separating material is removed from the thin film cluster manufactured by the thin film cluster manufacturing method of any one of claims 4 to 6 and further pulverized further to a predetermined size. Thin film particles
The method according to any one of claims 4 to 6, wherein the step of unloading the thin film cluster manufactured by the thin film cluster manufacturing method to the outside of the vacuum vessel, removing at least a portion or more of the coating material or the separating material and to a specified size Thin film particle production method characterized in that the further step of further grinding
The method of claim 4, wherein at least a portion of the thin film layer is a thin film layer having a multilayer structure including at least two or more different materials.
According to any one of claims 4 to 6, At the time when the thin film layer is deposited, the surface of the coated material or the coated substrate includes a depression and / or protrusion formed three-dimensionally in at least two places in a specified shape At least a portion of the thin film layer (s) is a thin film cluster manufacturing method, characterized in that formed in a three-dimensional shape
The thin film cluster according to any one of claims 1 to 3, wherein at least one of the thin film layers is a thin film having ultraviolet blocking properties (absorption and / or reflecting functions).
The thin film cluster according to any one of claims 1 to 3, wherein the thin film layer has a multilayer structure and the thin film layer on the outer surface is made of a coating material having a higher chemical stability than at least one other inner thin film layer.
The thin film cluster according to any one of claims 1 to 3, wherein at least a part of the thin film layer is formed of at least one material selected from a metal material, a semiconductor material, and a ceramic material.
The thin film cluster according to any one of claims 1 to 3, wherein at least a part of the thin film layer is a cosmetic material or a pigment for color tone.
The thin film cluster according to any one of claims 1 to 3, wherein at least a part of the thin film layer is a (transparent) conductive material or a heat conductive material.
The thin film according to any one of claims 1 to 3, wherein at least a portion of the thin film layer has a ratio of (length / width) of 10 or more, and has a long band or a band having a predetermined cross section. cluster
The method of claim 4 or 5, wherein the coated material is provided on one or more sides of the designated carrier (supporting substrate), the carrier (supporting substrate) is characterized in that at least one type selected from the film, roll, circulation belt. Thin film cluster manufacturing method