WO2013188574A3 - Multilayer substrate structure - Google Patents

Multilayer substrate structure Download PDF

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Publication number
WO2013188574A3
WO2013188574A3 PCT/US2013/045482 US2013045482W WO2013188574A3 WO 2013188574 A3 WO2013188574 A3 WO 2013188574A3 US 2013045482 W US2013045482 W US 2013045482W WO 2013188574 A3 WO2013188574 A3 WO 2013188574A3
Authority
WO
WIPO (PCT)
Prior art keywords
matching layer
lattice
thermal
substrate
chemical element
Prior art date
Application number
PCT/US2013/045482
Other languages
French (fr)
Other versions
WO2013188574A2 (en
Inventor
Indranil De
Francisco Machuca
Original Assignee
Tivra Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/794,285 external-priority patent/US20130333611A1/en
Priority claimed from US13/794,372 external-priority patent/US9879357B2/en
Application filed by Tivra Corporation filed Critical Tivra Corporation
Priority to CN201380043629.8A priority Critical patent/CN104781938B/en
Priority to EP13803800.5A priority patent/EP2862206A4/en
Priority to KR1020157000842A priority patent/KR20150047474A/en
Priority to JP2015517401A priority patent/JP6450675B2/en
Publication of WO2013188574A2 publication Critical patent/WO2013188574A2/en
Publication of WO2013188574A3 publication Critical patent/WO2013188574A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

A multilayer substrate structure comprises a substrate, a thermal matching layer formed on the substrate and a lattice matching layer above the thermal matching layer. The thermal matching layer includes at least one of molybdenum, molybdenum-copper, mullite, sapphire, graphite, aluminum-oxynitrides, silicon, silicon carbide, zinc oxides, and rare earth oxides. The lattice matching layer includes a first chemical element and a second chemical element to form an alloy. The first and second chemical element has similar crystal structures and chemical properties. The coefficient of thermal expansion of the thermal matching layer and the lattice parameter of the lattice matching layer are both approximately equal to that of a member of group III-V compound semiconductors. The lattice constant of the lattice matching layer is approximately equal to that of a member of group III-V compound semiconductor. The lattice matching layer and the thermal matching layer may be deposited on a substrate using a lateral control shutter.
PCT/US2013/045482 2012-06-14 2013-06-12 Multilayer substrate structure and method and system of manufacturing the same WO2013188574A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201380043629.8A CN104781938B (en) 2012-06-14 2013-06-12 Multi-layer substrate structure and the method and system for manufacturing it
EP13803800.5A EP2862206A4 (en) 2012-06-14 2013-06-12 Multilayer substrate structure and method and system of manufacturing the same
KR1020157000842A KR20150047474A (en) 2012-06-14 2013-06-12 Multilayer substrate structure
JP2015517401A JP6450675B2 (en) 2012-06-14 2013-06-12 Method for forming a multilayer substrate structure

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US201261659944P 2012-06-14 2012-06-14
US61/659,944 2012-06-14
US201261662918P 2012-06-22 2012-06-22
US61/662,918 2012-06-22
US13/794,285 US20130333611A1 (en) 2012-06-14 2013-03-11 Lattice matching layer for use in a multilayer substrate structure
US13/794,372 2013-03-11
US13/794,285 2013-03-11
US13/794,327 2013-03-11
US13/794,372 US9879357B2 (en) 2013-03-11 2013-03-11 Methods and systems for thin film deposition processes
US13/794,327 US8956952B2 (en) 2012-06-14 2013-03-11 Multilayer substrate structure and method of manufacturing the same

Publications (2)

Publication Number Publication Date
WO2013188574A2 WO2013188574A2 (en) 2013-12-19
WO2013188574A3 true WO2013188574A3 (en) 2014-05-08

Family

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Family Applications (1)

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PCT/US2013/045482 WO2013188574A2 (en) 2012-06-14 2013-06-12 Multilayer substrate structure and method and system of manufacturing the same

Country Status (6)

Country Link
EP (1) EP2862206A4 (en)
JP (1) JP6450675B2 (en)
KR (1) KR20150047474A (en)
CN (1) CN104781938B (en)
TW (1) TWI518747B (en)
WO (1) WO2013188574A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9487885B2 (en) 2012-06-14 2016-11-08 Tivra Corporation Substrate structures and methods
US9879357B2 (en) 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
EP2942803B1 (en) * 2014-05-08 2019-08-21 Flosfia Inc. Crystalline multilayer structure and semiconductor device
CN106057641A (en) * 2016-05-27 2016-10-26 清华大学 Semiconductor structure and method for preparing semiconductor structure
CN106057643A (en) * 2016-05-27 2016-10-26 清华大学 Semiconductor structure and method for preparing semiconductor structure
WO2019019054A1 (en) 2017-07-26 2019-01-31 Shenzhen Xpectvision Technology Co., Ltd. Radiation detector with built-in depolarization device
KR20200032700A (en) 2017-08-03 2020-03-26 에이에스엠엘 네델란즈 비.브이. Simultaneous double-sided coating of multilayer graphene pellicles by local heat treatment
WO2020194803A1 (en) * 2019-03-28 2020-10-01 日本碍子株式会社 Ground substrate and method for producing same
JP7283273B2 (en) * 2019-07-01 2023-05-30 株式会社レゾナック MAGNETIC RECORDING MEDIUM, MANUFACTURING METHOD THEREOF, AND MAGNETIC RECORDING/PLAYBACK APPARATUS

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US4999314A (en) * 1988-04-05 1991-03-12 Thomson-Csf Method for making an alternation of layers of monocrystalline semiconducting material and layers of insulating material
EP0499982A1 (en) * 1991-02-19 1992-08-26 Energy Conversion Devices, Inc. Method of forming a single crystal material
US5821562A (en) * 1993-12-20 1998-10-13 Sharp Kabushiki Kaisha Semiconductor device formed within asymetrically-shaped seed crystal region
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Also Published As

Publication number Publication date
TWI518747B (en) 2016-01-21
JP6450675B2 (en) 2019-01-09
WO2013188574A2 (en) 2013-12-19
KR20150047474A (en) 2015-05-04
JP2015526368A (en) 2015-09-10
TW201405636A (en) 2014-02-01
EP2862206A2 (en) 2015-04-22
CN104781938B (en) 2018-06-26
CN104781938A (en) 2015-07-15
EP2862206A4 (en) 2015-12-30

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