WO2014178223A1 - Wafer cassette having asymmetric groove shape - Google Patents

Wafer cassette having asymmetric groove shape Download PDF

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Publication number
WO2014178223A1
WO2014178223A1 PCT/JP2014/055360 JP2014055360W WO2014178223A1 WO 2014178223 A1 WO2014178223 A1 WO 2014178223A1 JP 2014055360 W JP2014055360 W JP 2014055360W WO 2014178223 A1 WO2014178223 A1 WO 2014178223A1
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Prior art keywords
side wall
substrate support
substrate
support plate
portions
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PCT/JP2014/055360
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French (fr)
Japanese (ja)
Inventor
恭兵 佐藤
康弘 不老地
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ミライアル株式会社
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Publication of WO2014178223A1 publication Critical patent/WO2014178223A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67326Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6732Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls

Definitions

  • the present invention relates to an asymmetric groove-shaped wafer cassette, and more particularly to an asymmetric groove-shaped wafer cassette that can accommodate a plurality of substrates such as semiconductor wafers in parallel.
  • a container for storing a substrate such as a semiconductor wafer
  • a container having a pair of side walls and a side substrate support is conventionally known.
  • a side substrate support portion is formed on each of the pair of side walls.
  • a substrate housing space capable of housing a plurality of substrates is formed between the pair of side walls.
  • the side substrate support portions are arranged so as to form a pair in the substrate housing space, and the adjacent substrates of the plurality of substrates are separated from each other at a predetermined interval and arranged in parallel. The edge can be supported.
  • one side wall has one inner surface facing the other side wall. Further, the other side wall has the other inner surface facing the one inner surface with a positional relationship parallel to the one inner surface.
  • the side substrate support portion has a plurality of substrate support plate-like portions extending in parallel to the inside of the substrate housing space on each of the one inner surface and the other inner surface.
  • grooves into which the edges of the plurality of substrates can be inserted are formed.
  • the groove between the plurality of substrate support plate-like portions on one side wall and the groove between the plurality of substrate support plate-like portions on the other side wall have an opposing positional relationship.
  • the edge of the substrate is inserted into the groove between the plurality of substrate support plate-like portions on one side wall and the groove between the plurality of substrate support plate-like portions on the other side wall, so that the edge of the substrate becomes a side substrate. Supported by the support part.
  • the plurality of substrate support plate-like portions provided on one side wall extend in a direction orthogonal to one inner surface. Moreover, the several board
  • a semiconductor wafer having a flat disk shape is generally known, but in the future, a wafer having a warped disk shape as a whole may be used.
  • a wafer having such a warped shape is inserted into the groove as described above, it is considered that the edge of the wafer having a large amount of warp cannot be easily inserted into the groove, making it difficult to accommodate the wafer.
  • the present invention provides a pair of side walls and a pair of side walls formed between the pair of side walls so as to form a pair in a substrate housing space formed between the pair of side walls and capable of accommodating a plurality of substrates.
  • a side substrate support portion capable of supporting edges of the plurality of substrates in a state where adjacent substrates are spaced apart and arranged in parallel, and one side wall is the other side One side surface facing the side wall, the other side wall having a positional relationship parallel to the one side surface and having the other side surface facing the one side surface, the side substrate support portion
  • Each of the one inner surface and the other inner surface has a plurality of substrate support plate-like portions extending in parallel to the inside of the substrate housing space, and between the plurality of substrate support plate-like portions.
  • the edge of the substrate is inserted into the groove between and the groove between the plurality of substrate support plate-like portions on the other side wall, whereby the edge of the substrate is supported by the side substrate support,
  • the plurality of substrate support plate-like portions provided on one side wall extend in a direction intersecting the normal line of the one inner surface, and the plurality of substrate support plate-like portions provided on the other side wall
  • the present invention relates to an asymmetric groove-shaped wafer cassette different from the shape of a groove between
  • the plurality of substrate support plate-like portions provided on the other side wall extend in parallel to the normal line of the other inner surface, and grooves between the plurality of substrate support plate-like portions on the other side wall are formed.
  • the width is preferably larger than the width of the groove between the plurality of substrate support plate-like portions on the one side wall.
  • the plurality of substrate support plate-like portions provided on the one side wall extend in a direction intersecting at an angle of 5 ° or more and 15 ° or less with respect to the normal line of the one inner surface.
  • an asymmetric groove-shaped wafer cassette that can easily accommodate a substrate such as a warped semiconductor wafer and can suppress the flutter of the substrate in the groove.
  • FIG. 3 is a cross-sectional view taken along line AA in FIG. 2. It is an expanded sectional view which shows the board
  • FIG. 1 is a lower perspective view showing a state in which a substrate W is accommodated in an asymmetric groove-shaped wafer cassette 1 according to an embodiment of the present invention.
  • FIG. 2 is a front view showing a state in which the substrate W is accommodated in the asymmetric groove-shaped wafer cassette 1 according to the embodiment of the present invention.
  • FIG. 3 is a cross-sectional view taken along the line AA in FIG.
  • FIG. 4 is an enlarged cross-sectional view showing the substrate support plate-like portions 50 and 60 of the asymmetric groove-shaped wafer cassette 1 according to the embodiment of the present invention.
  • 5A and 5B are views showing the substrate W accommodated in the asymmetric groove-shaped wafer cassette 1 according to the embodiment of the present invention, wherein FIG. 5A is a front view and FIG. 5B is a perspective view.
  • a direction from the back side opening 22 (to be described later) toward the container body opening 21 is defined as the front direction D11, and the opposite direction is the rear direction. These are defined as D12, and these are defined as the front-rear direction D1.
  • a direction (upward direction in FIG. 1) from the lower wall 24 to the upper wall 23, which will be described later, is defined as an upward direction D21, the opposite direction is defined as a downward direction D22, and these are defined as a vertical direction D2.
  • a direction from the second side wall 26 to be described later to the first side wall 25 is defined as a left direction D31, and an opposite direction is defined as a right direction D32. It is defined as a left-right direction D3.
  • explanation is given with arrows indicating these directions.
  • the substrate W (see FIG. 5) accommodated in the asymmetric groove-shaped wafer cassette 1 is a disk-shaped silicon wafer, glass wafer, sapphire wafer or the like, and is a thin one used in the industry.
  • the substrate W in the present embodiment is a substantially disk-shaped sapphire wafer having a diameter of about 4 inches and a thickness of about 0.1 mm.
  • the substrate W is obtained by forming a semiconductor layer on sapphire.
  • the semiconductor layer is, for example, a stack of nitride semiconductors.
  • substrate W is not specifically limited, For example, what is necessary is just a thickness of 100 micrometers or more and 2 mm or less.
  • the thickness of the semiconductor layer is 20 ⁇ m or less.
  • the substrate W is warped so that the upper surface side is convex as a whole with respect to the lower surface side.
  • the warpage amount WP of the substrate W varies depending on the substrate W and varies, but the maximum value is the distance from the virtual straight line X connecting the left and right ends of the substrate W shown in FIG. 5A to the center of the substrate W. Is about 12 mm. Further, a part of the periphery of the substrate W has a linear portion W1 (see FIG. 5B).
  • the asymmetric groove-shaped wafer cassette 1 has a container body 2 and substrate support plate portions 50 and 60 as side substrate support portions.
  • the container body 2 includes a wall 20 having a container body opening 21 formed at the front end and a back opening 22 formed at the rear end.
  • the wall portion 20 includes an upper wall 23, a lower wall 24, a first side wall 25, and a second side wall 26.
  • a substrate housing space 27 is formed in the container body 2.
  • the substrate housing space 27 is formed so as to be surrounded by the wall portion 20.
  • Substrate support plate-like portions 50 and 60 are arranged in a portion of the wall portion 20 that forms the substrate accommodation space 27. As shown in FIG. 1, a plurality of substrates W can be stored in the substrate storage space 27.
  • the substrate support plate-like portions 50 and 60 are provided on the wall portion 20 so as to make a pair in the left-right direction D3 within the substrate accommodation space 27.
  • the substrate support plate-like portions 50 and 60 can support the edge portions of the plurality of substrates W in a state where adjacent substrates W are separated from each other at a predetermined interval and are arranged in parallel.
  • Substrate rear abutment walls 252 and 262 are provided on the back side (the rear direction D12 side) of the substrate support plate-like portions 50 and 60. Substrate rear contact walls 252 and 262 abut the rear edge of the substrate W when the substrate W is accommodated in the substrate accommodating space 27.
  • the substrate W is supported in the substrate accommodation space 27 in such a positional relationship that the normal of the front surface W11 (see FIG. 5) coincides with the upper direction D21 and the normal of the back surface W12 coincides with the lower direction D22.
  • the main configuration of the present embodiment will be described in detail.
  • the upper wall 23, the lower wall 24, the first side wall 25, and the second side wall 26 constituting the wall portion 20 are made of a plastic material or the like.
  • the upper wall 23, the lower wall 24, and the second side wall 26 are integrally formed of PEEK resin. ing.
  • the first side wall 25 and the second side wall 26 face each other, and the upper wall 23 and the lower wall 24 face each other.
  • the upper end of the first side wall 25 and the upper end of the second side wall 26 are connected to the upper wall 23, and the lower end of the first side wall 25 and the lower end of the second side wall 26 are connected to the lower wall 24. Accordingly, as shown in FIG. 2, the upper wall 23, the lower wall 24, the first side wall 25, and the second side wall 26 form a substantially rectangular shape when viewed from the front.
  • the front end of the upper wall 23, the front end of the first side wall 25, and the front end of the second side wall 26 are located at the foremost side, and constitute an opening peripheral portion 28 that forms the container main body opening 21 at the front end of the container main body 2.
  • the front end of the first side wall 25 has a left opening flange portion 251 extending leftward.
  • the front end of the second side wall 26 has a right opening flange portion 261 that extends rightward.
  • the substrate housing space 27 is formed between the first side wall 25 and the second side wall 26.
  • the rear part of the first side wall 25 and the rear part of the second side wall 26 have substrate rear contact walls 252 and 262 (see FIG. 3 and the like) that decrease in width in the left-right direction D3 as going backward.
  • the rear edge of the substrate W accommodated in the substrate accommodating space 27 abuts on the substrate rear abutting walls 252 and 262. Thereby, the movement to the back of the board
  • substrate W is controlled.
  • the rear part of the first side wall 25 and the rear part of the second side wall 26 are rear extension walls extending rearward from the substrate rear part contact wall 252 of the first side wall 25 and the substrate rear part contact wall 262 of the second side wall 26, respectively. 253, 263.
  • the rear extension walls 253 and 263 have a parallel positional relationship. As shown in FIG. 2, the rear end of the rear extension wall 253 and the rear end of the rear extension wall 263 form a rectangular rear opening 22 in a front view.
  • the lower wall 24 has a substantially H shape in a downward view.
  • the lower wall 24 includes a left extension 241, a right extension 242, and a central connection part 243.
  • the left extension 241 extends from the rear end of the first side wall 25 to the vicinity of the front end along the lower end of the first side wall 25.
  • the right extension 242 extends from the rear end of the second side wall 26 to the vicinity of the front end along the lower end of the second side wall 26.
  • the central connecting portion 243 is integrally formed with the left extending portion 241 and the right extending portion 242, and connects the left extending portion 241 and the right extending portion 242 so as to be bridged.
  • An inner surface 265 of 26 forms a substrate housing space 27 (see FIG. 1 and the like) surrounded by these.
  • the inner surface 265 of the second side wall 26 has a positional relationship parallel to the inner surface 255 of the first side wall 25 and faces the first side wall 25.
  • the inner surface 255 of the first side wall 25 and the inner surface 265 of the second side wall 26 have a positional relationship parallel to the front-rear direction D1 and the up-down direction D2.
  • a maximum of 12 substrates W can be stored in the substrate storage space 27.
  • the substrate support plate portions 50 and 60 are provided in the first side wall 25 and the second side wall 26, respectively, and are arranged in the substrate housing space 27 so as to form a pair in the left-right direction D3. Specifically, as shown in FIGS. 1 and 2, 13 substrate support plate-like portions 50 are provided on the inner surface 255 of the first side wall 25.
  • the substrate support plate-like portion 50 is integrally formed with the first side wall 25, extends from the front end of the first side wall 25 to a substantially central position in the front-rear direction D 1 of the substrate rear contact wall 252, and also includes the substrate accommodation space 27. It extends parallel to the inside.
  • the extending direction of the substrate support plate-like portion 50 is a direction intersecting with the normal line 255A of the inner surface 255 of the first side wall 25 extending in parallel to the right direction D32, specifically, An imaginary plane 256A located at the center between the upper surface of the groove 256 and the lower surface of the groove 256 formed between the substrate support plate-like portions 50 is 5 ° upward with respect to the normal line 255A of the inner surface 255 of the first side wall 25.
  • the direction is an angle ⁇ of 15 ° or less. The reason why the angle ⁇ is set to 5 ° or more is that if the angle ⁇ is less than 5 °, the effect that the edge of the substrate W can be easily inserted into the groove 256 cannot be obtained.
  • the angle ⁇ is set to 15 ° or less is that, even in the case of the substrate W having the maximum warping amount WP, if it exceeds 15 °, it becomes difficult to insert the edge of the substrate W into the groove 256. is there.
  • it is a direction that forms an angle ⁇ of 10 ° upward with respect to the normal line 255 ⁇ / b> A of the inner surface 255 of the first side wall 25.
  • the extension length of the substrate support plate-like portion 50 from the inner surface 255 in the left-right direction D3 is about 12.5 mm.
  • substrate support plate-shaped part 50 in the up-down direction D2 is about 6.8 mm.
  • the grooves 256 formed between the substrate support plate portions 50 are formed in a total of 12 lines.
  • the width of the groove 256 is about 2.7 mm.
  • a draining through hole 257 (see FIG. 3 and the like) is formed in a portion of the substrate rear contact wall 262 corresponding to the rear end portion of the groove 256.
  • the draining through hole 257 communicates the inside of the substrate housing space 27 and the outside of the substrate housing space 27.
  • a through hole 258 extending along the front-rear direction D ⁇ b> 1 in which the groove 256 extends is formed at the bottom of the groove 256.
  • the through hole 258 communicates the inside of the substrate accommodation space 27 and the outside of the substrate accommodation space 27.
  • One edge of the substrate W can be inserted into each of the grooves 256.
  • 13 substrate support plate portions 60 are provided on the inner surface 265 of the second side wall 26.
  • the substrate support plate-like portion 60 is integrally formed with the second side wall 26, and as shown in FIG. 3, reaches from the front end of the second side wall 26 to a substantially central position in the front-rear direction D1 of the substrate rear contact wall 262. And extends parallel to the inside of the substrate housing space 27. As shown in FIG. 4, the extending direction of the substrate support plate-like portion 60 is between the substrate support plate-like portions 60 with respect to the normal line 265A of the inner surface 265 of the second side wall 26 extending parallel to the left-right direction D3.
  • a virtual plane 266A located at the center between the upper surface of the formed groove 266 and the lower surface of the groove 266 is a parallel direction (coincident direction).
  • the extension length of the substrate support plate-like portion 60 from the inner surface 265 in the left-right direction D3 is about 12.5 mm.
  • substrate support plate-shaped part 60 in the up-down direction D2 is about 3.2 mm.
  • the relationship between the extension length A1 of the substrate support plate-like portion 50 and the extension length B1 of the substrate support plate-like portion 60 is such that the extension length B1 of the substrate support plate-like portion 60 is the substrate. It is preferable that the extension length A1 of the support plate-like portion 50 is longer (B1> A1).
  • the extension length B1 of the substrate support plate-like portion 60 is preferably in the range of 12.5 mm to 15 mm. Within this range, the substrate W can be stably held in the asymmetric groove-shaped wafer cassette 1.
  • the warped substrate W hits the upper surface of the substrate support plate-like portion 50, and the force that presses the substrate W downward works. It is possible to avoid the occurrence of cracks in the substrate W as much as possible.
  • the grooves 266 formed between the substrate support plate portions 60 are formed in a total of 12 lines.
  • the width of the groove 266 is about 6.3 mm, which is larger than the width of the groove 256 formed between the substrate support plate-like portions 50 of the first side wall 25.
  • a draining through hole 267 is formed in a portion of the substrate rear contact wall 262 corresponding to the rear end portion of the groove 266.
  • the draining through-hole 267 communicates the inside of the substrate housing space 27 and the outside of the substrate housing space 27.
  • a through hole 268 extending along the front-rear direction D ⁇ b> 1 in which the groove 266 extends is formed at the bottom of the groove 266.
  • the through hole 268 communicates the inside of the substrate housing space 27 and the outside of the substrate housing space 27.
  • One edge of the substrate W can be inserted into each of the grooves 266.
  • the groove 256 formed between the substrate support plate-like portions 50 on the first side wall 25 and the groove 266 formed between the substrate support plate-like portions 60 on the second side wall 26 are formed on the substrate W.
  • the edge portion of the substrate W is supported by the substrate support plate-like portions 50 and 60 as the side substrate support portions.
  • the first side wall 25 has a virtual plane C that passes through the center position of the substrate housing space 27 in the left-right direction D3 and is parallel to the front-rear direction D1 and the up-down direction D2.
  • the substrate support plate-like portion 50 and the substrate support plate-like portion 60 of the second side wall 26 have an asymmetric shape.
  • the shape of the groove 256 formed between the substrate support plate-like portions 50 of the first side wall 25 and the shape of the groove 266 formed between the substrate support plate-like portions 60 of the second side wall 26 are: Is different.
  • FIG. 2 the state in which the substrate W having the maximum warpage is inserted into the grooves 256 and 266 is illustrated, but actually, the substrate W having a smaller warpage than the substrate W shown in FIG. 266 and accommodated in the substrate accommodating space 27. Therefore, actually, the virtual plane 256A located at the center between the upper surface of the groove 256 and the lower surface of the groove 256, and the upper surface (front surface W11) and the lower surface (back surface W12) of the substrate W accommodated in the groove 256 are substantially the same. Has a parallel positional relationship.
  • the plurality of substrate support plate-like portions 50 provided on the first side wall 25 as one side wall intersect with the normal line 255A of the inner surface 255 of the first side wall 25 as one inner surface. It extends to.
  • the plurality of substrate support plate-like portions 60 provided on the second side wall 26 as the other side wall have an asymmetric shape with the plurality of substrate support plate-like portions 50 provided on the first side wall 25.
  • the shape of the groove 256 between the substrate support plate-like portions 50 of the first side wall 25 is different from the shape of the groove 266 between the substrate support plate-like portions 60 of the second side wall 26.
  • the edge portion of the substrate W having a warped shape as a whole and a large amount of warpage can be surely inserted into the grooves 256 and 266.
  • the substrate W having a warped shape can be accommodated in the substrate accommodating space 27.
  • the container body opening 21 is positioned upward and the back opening 22 is positioned downward, the substrate W flutters in the grooves 256 and 266 when the so-called vertical position is set. Can be suppressed.
  • the plurality of substrate support plate-like portions 60 provided on the second side wall 26 as the other side wall extend in parallel to the normal line 265A of the inner surface 265 of the second side wall 26 as the other inner surface, and the second side wall
  • the width of the groove 266 between the plurality of substrate support plate portions 60 of the 26 is larger than the width of the groove 256 between the plurality of substrate support plate portions 50 of the first side wall 25 as one side wall.
  • the substrate support plate-like portion 50 of the first side wall 25 is visually observed.
  • the edge of the substrate W into the groove 256 between them the opposite end of the substrate W can be inserted into the groove 266 of the substrate support plate-like portion 60 of the second side wall 26 without visual inspection. can do. That is, considering the amount of warpage of the substrate W and the direction in which the substrate support plate portion 50 extends, the width of the groove 266 between the plurality of substrate support plate portions 60 of the second side wall 26 is appropriately increased. To do.
  • the edge of the substrate W is inserted into the groove 256 between the substrate supporting plate-like portions 50 of the first side wall 25 by visual observation, so that the substrate supporting plate-like portion 60 of the second side wall 26 is not visually observed.
  • the opposite end of the substrate W can be inserted into the groove 266. Further, it is possible to easily form the second side wall 26 provided with the substrate support plate-like portion 60 in which the groove 266 is formed.
  • the plurality of substrate support plate-like portions 50 provided on the first side wall 25 as one side wall are 5 ° or more and 15 ° or less with respect to the normal line 255A of the inner surface 255 of the first side wall 25 as one inner surface. It extends in the direction that intersects at the angle ⁇ . For this reason, the insertion of the substrate W into the groove 256 between the substrate support plate-like portions 50 of the first side wall 25 can be facilitated more reliably.
  • the present invention is not limited to the above-described embodiment, and can be modified within the technical scope described in the claims.
  • the grooves 256 and 266 are each formed with 12 lines, but the number is not limited to this. That is, the number of substrate support plate-like portions 50 and substrate support plate-like portions 60 is not limited to 13.
  • the plurality of substrate support plate-like portions 60 provided on the second side wall 26 extend parallel to the normal line 265A of the inner surface 265 of the second side wall 26, and the plurality of substrate support plate-like portions 60 on the second side wall 26.
  • the width of the groove 266 in between is configured to be larger than the width of the groove 256 between the plurality of substrate support plate-like portions 50 of the first side wall 25, but is not limited to this configuration.
  • the plurality of substrate support plate-like portions provided on the other side wall have an asymmetric shape with respect to the plurality of substrate support plate-like portions provided on the one side wall, so that between the substrate support plate-like portions on one side wall
  • the shape of the groove and the shape of the groove between the substrate support plate portions on the other side wall may be different.
  • the upper wall 23, the lower wall 24, the 1st side wall 25, and the 2nd side wall 26 were integrally formed by PEEK resin, it is not limited to PEEK resin.
  • a general-purpose resin such as PFA (fluororesin) or PP (polypropylene) may be used.
  • the shapes of the upper wall 23, the lower wall 24, the first side wall 25, and the second side wall 26 are not limited to the shapes of the present embodiment.
  • the dimension value of each part is not limited to the dimension value described in the present embodiment.
  • the substrate W in this embodiment is a substantially disk-shaped sapphire wafer having a diameter of 4 inches and a thickness of about 0.1 mm, but is not limited to this dimension.
  • Asymmetric groove-shaped wafer cassette 25 First side wall (a pair of side walls) 26 Second side wall (a pair of side walls) 27 Substrate accommodation space 50, 60 Substrate support plate-like portion (side substrate support portion) 255 Inner surface (one inner surface) 255A, 265A Normal line 256, 266 Groove 265 Inner surface (the other inner surface) W substrate

Abstract

A plurality of substrate supporting board-like sections (50) extend in the direction intersecting a normal line of one inner surface (255), said substrate supporting board-like sections being provided on one side wall of a wafer cassette (1) having asymmetric groove shapes. Since the shape of substrate supporting board-like sections (60) that are provided on the other side wall and the shape of the substrate supporting board-like sections (50) that are provided on the one side wall are asymmetric to each other, the shape of grooves (256) among the substrate supporting board-shaped sections (50) on the one side wall, and the shape of grooves (266) among the substrate supporting board-shaped sections (60) on the other side wall are different from each other.

Description

非対称溝形状ウェーハカセットAsymmetric groove-shaped wafer cassette
 本発明は、非対称溝形状ウェーハカセットに関し、特に、半導体ウェーハ等の基板を並列させた状態で複数収納可能な非対称溝形状ウェーハカセットに関する。 The present invention relates to an asymmetric groove-shaped wafer cassette, and more particularly to an asymmetric groove-shaped wafer cassette that can accommodate a plurality of substrates such as semiconductor wafers in parallel.
 半導体ウェーハ等の基板を収納する容器としては、一対の側壁と、側方基板支持部とを備える構成のものが、従来より知られている。一対の側壁のそれぞれには側方基板支持部が形成されている。また、一対の側壁間には、複数の基板を収容可能な基板収容空間が形成されている。側方基板支持部は、基板収容空間内において対をなすように配置されており、複数の基板のうちの隣接する基板同士を所定の間隔で離間させて並列させた状態で、複数の基板の縁部を支持可能である。 As a container for storing a substrate such as a semiconductor wafer, a container having a pair of side walls and a side substrate support is conventionally known. A side substrate support portion is formed on each of the pair of side walls. A substrate housing space capable of housing a plurality of substrates is formed between the pair of side walls. The side substrate support portions are arranged so as to form a pair in the substrate housing space, and the adjacent substrates of the plurality of substrates are separated from each other at a predetermined interval and arranged in parallel. The edge can be supported.
 より具体的には、一方の側壁は、他方の側壁に対向する一方の内面を有している。また、他方の側壁は、一方の内面に平行な位置関係を有して一方の内面に対向する他方の内面を有している。側方基板支持部は、一方の内面と他方の内面とのそれぞれにおいて、基板収容空間の内方へ平行に延出する複数の基板支持板状部を有している。 More specifically, one side wall has one inner surface facing the other side wall. Further, the other side wall has the other inner surface facing the one inner surface with a positional relationship parallel to the one inner surface. The side substrate support portion has a plurality of substrate support plate-like portions extending in parallel to the inside of the substrate housing space on each of the one inner surface and the other inner surface.
 複数の基板支持板状部間には、複数の基板の縁部を挿入可能な溝が形成されている。一方の側壁の複数の基板支持板状部間の溝と他方の側壁の複数の基板支持板状部間の溝とは、対向する位置関係を有している。一方の側壁の複数の基板支持板状部間の溝と他方の側壁の複数の基板支持板状部間の溝とに基板の縁部が挿入されることにより、基板の縁部が側方基板支持部に支持される。 Between the plurality of substrate support plate-like portions, grooves into which the edges of the plurality of substrates can be inserted are formed. The groove between the plurality of substrate support plate-like portions on one side wall and the groove between the plurality of substrate support plate-like portions on the other side wall have an opposing positional relationship. The edge of the substrate is inserted into the groove between the plurality of substrate support plate-like portions on one side wall and the groove between the plurality of substrate support plate-like portions on the other side wall, so that the edge of the substrate becomes a side substrate. Supported by the support part.
 一方の側壁に設けられた複数の基板支持板状部は、一方の内面に対して直交する方向へ延出している。また、他方の側壁に設けられた複数の基板支持板状部は、他方の内面に対して直交する方向へ延出している(特許文献1参照)。 The plurality of substrate support plate-like portions provided on one side wall extend in a direction orthogonal to one inner surface. Moreover, the several board | substrate support plate-shaped part provided in the other side wall is extended in the direction orthogonal to the other inner surface (refer patent document 1).
特開平8-8331号公報JP-A-8-8331
 半導体ウェーハとしては、一般には平板状の円盤形状を有するものが知られているが、将来的には、全体として反った円盤形状を有するウェーハが用いられることが考えられる。このように反った形状のウェーハを前述のような溝に挿入する際には、反り量の大きなウェーハの縁部を溝に容易に挿入できず、ウェーハの収容が困難になることが考えられる。 A semiconductor wafer having a flat disk shape is generally known, but in the future, a wafer having a warped disk shape as a whole may be used. When a wafer having such a warped shape is inserted into the groove as described above, it is considered that the edge of the wafer having a large amount of warp cannot be easily inserted into the groove, making it difficult to accommodate the wafer.
 また、作業者が目視によりウェーハを収容するマニュアル操作によって、ウェーハを溝に挿入する場合には、一方の側壁の側の溝と、他方の側壁の側の溝とをそれぞれ目視確認しながら挿入する必要がある。しかし、上述のような溝に反った形状のウェーハを、目視によっても溝に挿入することは困難であり、無理に挿入しようとすると、ウェーハを破損する恐れがある。 In addition, when a wafer is inserted into a groove by a manual operation in which an operator visually accommodates the wafer, the groove on one side wall side and the groove on the other side wall side are inserted while visually confirming each. There is a need. However, it is difficult to insert a wafer having a shape warped in the groove as described above into the groove by visual observation, and there is a risk of damaging the wafer if it is forced to insert the wafer.
 本発明は、反った形状の半導体ウェーハ等の基板を容易に収容することができ、溝の中での基板のバタつきを抑制できる非対称溝形状ウェーハカセットを提供することを目的とする。 It is an object of the present invention to provide an asymmetric groove-shaped wafer cassette that can easily accommodate a substrate such as a warped semiconductor wafer and can suppress the flutter of the substrate in the groove.
 本発明は、一対の側壁と、前記一対の側壁間に形成され複数の基板を収容可能な基板収容空間内において、対をなすように前記一対の側壁のそれぞれに形成され、前記複数の基板のうちの隣接する基板同士を所定の間隔で離間させて並列させた状態で、前記複数の基板の縁部を支持可能な側方基板支持部と、を備え、一方の前記側壁は、他方の前記側壁に対向する一方の内面を有し、他方の前記側壁は、前記一方の内面に平行な位置関係を有して前記一方の内面に対向する他方の内面を有し、前記側方基板支持部は、前記一方の内面と前記他方の内面とのそれぞれにおいて、前記基板収容空間の内方へ平行に延出する複数の基板支持板状部を有し、複数の前記基板支持板状部間には、前記複数の基板の縁部を挿入可能な溝が形成され、前記一方の側壁の複数の前記基板支持板状部間の溝と前記他方の側壁の複数の前記基板支持板状部間の溝とは対向し、前記一方の側壁の複数の前記基板支持板状部間の溝と前記他方の側壁の複数の前記基板支持板状部間の溝とに前記基板の縁部が挿入されることにより前記基板の縁部が前記側方基板支持部に支持され、前記一方の側壁に設けられた複数の前記基板支持板状部は、前記一方の内面の法線に対して交差する方向へ延出し、前記他方の側壁に設けられた複数の前記基板支持板状部が、一方の側壁に設けられた複数の基板支持板状部とは非対称の形状を有することにより、前記一方の側壁の前記基板支持板状部間の溝の形状と、前記他方の側壁の前記基板支持板状部間の溝の形状とは異なる非対称溝形状ウェーハカセットに関する。 The present invention provides a pair of side walls and a pair of side walls formed between the pair of side walls so as to form a pair in a substrate housing space formed between the pair of side walls and capable of accommodating a plurality of substrates. A side substrate support portion capable of supporting edges of the plurality of substrates in a state where adjacent substrates are spaced apart and arranged in parallel, and one side wall is the other side One side surface facing the side wall, the other side wall having a positional relationship parallel to the one side surface and having the other side surface facing the one side surface, the side substrate support portion Each of the one inner surface and the other inner surface has a plurality of substrate support plate-like portions extending in parallel to the inside of the substrate housing space, and between the plurality of substrate support plate-like portions. Are formed with grooves into which edges of the plurality of substrates can be inserted, The grooves between the plurality of substrate support plate-like portions on one side wall and the grooves between the plurality of substrate support plate-like portions on the other side wall face each other, and the plurality of substrate support plate-like portions on the one side wall The edge of the substrate is inserted into the groove between and the groove between the plurality of substrate support plate-like portions on the other side wall, whereby the edge of the substrate is supported by the side substrate support, The plurality of substrate support plate-like portions provided on one side wall extend in a direction intersecting the normal line of the one inner surface, and the plurality of substrate support plate-like portions provided on the other side wall However, by having an asymmetric shape with the plurality of substrate support plate-like portions provided on one side wall, the shape of the groove between the substrate support plate-like portions on the one side wall and the above-mentioned on the other side wall The present invention relates to an asymmetric groove-shaped wafer cassette different from the shape of a groove between substrate support plate-like portions.
 また、前記他方の側壁に設けられた複数の前記基板支持板状部は、前記他方の内面の法線に平行に延出し、前記他方の側壁の複数の前記基板支持板状部間における溝の幅は、前記一方の側壁の複数の前記基板支持板状部間における溝の幅よりも大きいことが好ましい。 The plurality of substrate support plate-like portions provided on the other side wall extend in parallel to the normal line of the other inner surface, and grooves between the plurality of substrate support plate-like portions on the other side wall are formed. The width is preferably larger than the width of the groove between the plurality of substrate support plate-like portions on the one side wall.
 また、前記一方の側壁に設けられた複数の前記基板支持板状部は、前記一方の内面の法線に対して5°以上15°以下の角度で交差する方向へ延出することが好ましい。 Further, it is preferable that the plurality of substrate support plate-like portions provided on the one side wall extend in a direction intersecting at an angle of 5 ° or more and 15 ° or less with respect to the normal line of the one inner surface.
 本発明によれば、反った形状の半導体ウェーハ等の基板を容易に収容することができ、溝の中での基板のバタつきを抑制できる非対称溝形状ウェーハカセットを提供することができる。 According to the present invention, it is possible to provide an asymmetric groove-shaped wafer cassette that can easily accommodate a substrate such as a warped semiconductor wafer and can suppress the flutter of the substrate in the groove.
本発明の実施形態による非対称溝形状ウェーハカセット1に基板Wが収容された状態を示す下方斜視図である。It is a downward perspective view which shows the state in which the board | substrate W was accommodated in the asymmetrical groove shape wafer cassette 1 by embodiment of this invention. 本発明の実施形態による非対称溝形状ウェーハカセット1に基板Wが収容された状態を示す正面図である。It is a front view which shows the state in which the board | substrate W was accommodated in the asymmetrical groove shape wafer cassette 1 by embodiment of this invention. 図2のA―A線に沿った断面図である。FIG. 3 is a cross-sectional view taken along line AA in FIG. 2. 本発明の実施形態による非対称溝形状ウェーハカセット1の基板支持板状部50、60を示す拡大断面図である。It is an expanded sectional view which shows the board | substrate support plate- shaped parts 50 and 60 of the asymmetrical groove shape wafer cassette 1 by embodiment of this invention. 本発明の実施形態による非対称溝形状ウェーハカセット1に収容される基板Wを示す図であり、(a)は正面図であり、(b)は斜視図である。It is a figure which shows the board | substrate W accommodated in the asymmetrical groove shape wafer cassette 1 by embodiment of this invention, (a) is a front view, (b) is a perspective view.
 以下、本発明の実施形態による非対称溝形状ウェーハカセットについて、図1~図5を参照しながら説明する。
 図1は、本発明の実施形態による非対称溝形状ウェーハカセット1に基板Wが収容された状態を示す下方斜視図である。図2は、本発明の実施形態による非対称溝形状ウェーハカセット1に基板Wが収容された状態を示す正面図である。図3は、図2のA―A線に沿った断面図である。図4は、本発明の実施形態による非対称溝形状ウェーハカセット1の基板支持板状部50、60を示す拡大断面図である。図5は、本発明の実施形態による非対称溝形状ウェーハカセット1に収容される基板Wを示す図であり、(a)は正面図であり、(b)は斜視図である。
Hereinafter, an asymmetric groove-shaped wafer cassette according to an embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is a lower perspective view showing a state in which a substrate W is accommodated in an asymmetric groove-shaped wafer cassette 1 according to an embodiment of the present invention. FIG. 2 is a front view showing a state in which the substrate W is accommodated in the asymmetric groove-shaped wafer cassette 1 according to the embodiment of the present invention. FIG. 3 is a cross-sectional view taken along the line AA in FIG. FIG. 4 is an enlarged cross-sectional view showing the substrate support plate- like portions 50 and 60 of the asymmetric groove-shaped wafer cassette 1 according to the embodiment of the present invention. 5A and 5B are views showing the substrate W accommodated in the asymmetric groove-shaped wafer cassette 1 according to the embodiment of the present invention, wherein FIG. 5A is a front view and FIG. 5B is a perspective view.
 ここで、説明の便宜上、後述の奥側開口部22から容器本体開口部21へ向かう方向(図1における右下から左上へ向かう方向)を前方向D11と定義し、その反対の方向を後方向D12と定義し、これらを前後方向D1と定義する。また、後述の下壁24から上壁23へと向かう方向(図1における上方向)を上方向D21と定義し、その反対の方向を下方向D22と定義し、これらを上下方向D2と定義する。また、後述する第2側壁26から第1側壁25へと向かう方向(図1における右から左へ向かう方向)を左方向D31と定義し、その反対の方向を右方向D32と定義し、これらを左右方向D3と定義する。各図においては、これらの方向を示す矢印を付して説明する。 Here, for convenience of explanation, a direction from the back side opening 22 (to be described later) toward the container body opening 21 (direction from the lower right to the upper left in FIG. 1) is defined as the front direction D11, and the opposite direction is the rear direction. These are defined as D12, and these are defined as the front-rear direction D1. Further, a direction (upward direction in FIG. 1) from the lower wall 24 to the upper wall 23, which will be described later, is defined as an upward direction D21, the opposite direction is defined as a downward direction D22, and these are defined as a vertical direction D2. . Further, a direction from the second side wall 26 to be described later to the first side wall 25 (a direction from right to left in FIG. 1) is defined as a left direction D31, and an opposite direction is defined as a right direction D32. It is defined as a left-right direction D3. In each figure, explanation is given with arrows indicating these directions.
 非対称溝形状ウェーハカセット1に収納される基板W(図5参照)は、円盤状のシリコンウェーハ、ガラスウェーハ、サファイアウェーハ等であり、産業に用いられる薄いものである。本実施形態における基板Wは、直径が4インチ程度で、厚さが0.1mm程度の略円盤状のサファイアウェーハである。基板Wは、サファイアの上に半導体層を形成したものである。その半導体層は、例えば窒化物半導体が積層されたものである。基板Wの厚みは特に限定されるものではないが、例えば100μm以上2mm以下の厚みがあればよい。また、半導体層の厚みは、20μm以下である。基板Wは、上面側が下面側に対して全体として凸となるように反っている。基板Wの反り量WPは、基板Wにより個体差がありばらつきがあるが、最大値は、図5(a)に示す基板Wの左右両端を結ぶ仮想直線Xから、基板Wの中央までの距離が12mmとなる程度である。また、基板Wの周縁の一部は、直線状の部分W1(図5(b)参照)を有している。 The substrate W (see FIG. 5) accommodated in the asymmetric groove-shaped wafer cassette 1 is a disk-shaped silicon wafer, glass wafer, sapphire wafer or the like, and is a thin one used in the industry. The substrate W in the present embodiment is a substantially disk-shaped sapphire wafer having a diameter of about 4 inches and a thickness of about 0.1 mm. The substrate W is obtained by forming a semiconductor layer on sapphire. The semiconductor layer is, for example, a stack of nitride semiconductors. Although the thickness of the board | substrate W is not specifically limited, For example, what is necessary is just a thickness of 100 micrometers or more and 2 mm or less. The thickness of the semiconductor layer is 20 μm or less. The substrate W is warped so that the upper surface side is convex as a whole with respect to the lower surface side. The warpage amount WP of the substrate W varies depending on the substrate W and varies, but the maximum value is the distance from the virtual straight line X connecting the left and right ends of the substrate W shown in FIG. 5A to the center of the substrate W. Is about 12 mm. Further, a part of the periphery of the substrate W has a linear portion W1 (see FIG. 5B).
 図1~図2に示すように、非対称溝形状ウェーハカセット1は、容器本体2と、側方基板支持部としての基板支持板状部50、60とを有している。 As shown in FIGS. 1 and 2, the asymmetric groove-shaped wafer cassette 1 has a container body 2 and substrate support plate portions 50 and 60 as side substrate support portions.
 図1に示すように、容器本体2は、前端部に容器本体開口部21が形成されると共に後端部に奥側開口部22が形成される壁部20により構成されている。壁部20は、上壁23と下壁24と第1側壁25と第2側壁26とを有する。容器本体2内には基板収容空間27が形成されている。基板収容空間27は、壁部20により取り囲まれて形成されている。壁部20の部分であって基板収容空間27を形成している部分には、基板支持板状部50、60が配置されている。基板収容空間27には、図1に示すように、複数の基板Wを収納可能である。 As shown in FIG. 1, the container body 2 includes a wall 20 having a container body opening 21 formed at the front end and a back opening 22 formed at the rear end. The wall portion 20 includes an upper wall 23, a lower wall 24, a first side wall 25, and a second side wall 26. A substrate housing space 27 is formed in the container body 2. The substrate housing space 27 is formed so as to be surrounded by the wall portion 20. Substrate support plate- like portions 50 and 60 are arranged in a portion of the wall portion 20 that forms the substrate accommodation space 27. As shown in FIG. 1, a plurality of substrates W can be stored in the substrate storage space 27.
 基板支持板状部50、60は、基板収容空間27内で左右方向D3において対をなすように壁部20に設けられている。基板支持板状部50、60は、隣接する基板W同士を所定の間隔で離間させて並列させた状態で、複数の基板Wの縁部を支持可能である。基板支持板状部50、60の奥側(後方向D12の側)には、基板後部当接壁252、262(図3等参照)が設けられている。基板後部当接壁252、262は、基板Wが基板収容空間27に収容されているときに、基板Wの後部の縁部が当接する。 The substrate support plate- like portions 50 and 60 are provided on the wall portion 20 so as to make a pair in the left-right direction D3 within the substrate accommodation space 27. The substrate support plate- like portions 50 and 60 can support the edge portions of the plurality of substrates W in a state where adjacent substrates W are separated from each other at a predetermined interval and are arranged in parallel. Substrate rear abutment walls 252 and 262 (see FIG. 3 and the like) are provided on the back side (the rear direction D12 side) of the substrate support plate- like portions 50 and 60. Substrate rear contact walls 252 and 262 abut the rear edge of the substrate W when the substrate W is accommodated in the substrate accommodating space 27.
 基板Wは、表面W11(図5参照)の法線が上方向D21に一致し、裏面W12の法線が下方向D22に一致した位置関係とされて、基板収容空間27内に支持される。以下、本実施形態における主要な構成について、詳細に説明する。 The substrate W is supported in the substrate accommodation space 27 in such a positional relationship that the normal of the front surface W11 (see FIG. 5) coincides with the upper direction D21 and the normal of the back surface W12 coincides with the lower direction D22. Hereinafter, the main configuration of the present embodiment will be described in detail.
 壁部20を構成する上壁23、下壁24、第1側壁25、及び第2側壁26は、プラスチック材等により構成されており、第1実施形態では、PEEK樹脂により一体成形されて構成されている。 The upper wall 23, the lower wall 24, the first side wall 25, and the second side wall 26 constituting the wall portion 20 are made of a plastic material or the like. In the first embodiment, the upper wall 23, the lower wall 24, and the second side wall 26 are integrally formed of PEEK resin. ing.
 第1側壁25と第2側壁26とは対向しており、上壁23と下壁24とは対向している。第1側壁25の上端及び第2側壁26の上端は、上壁23に接続されており、第1側壁25の下端及び第2側壁26の下端は、下壁24に接続されている。従って、上壁23、下壁24、第1側壁25、及び第2側壁26によって、図2に示すように、前方視で略長方形状が形成される。 The first side wall 25 and the second side wall 26 face each other, and the upper wall 23 and the lower wall 24 face each other. The upper end of the first side wall 25 and the upper end of the second side wall 26 are connected to the upper wall 23, and the lower end of the first side wall 25 and the lower end of the second side wall 26 are connected to the lower wall 24. Accordingly, as shown in FIG. 2, the upper wall 23, the lower wall 24, the first side wall 25, and the second side wall 26 form a substantially rectangular shape when viewed from the front.
 上壁23の前端、第1側壁25の前端、及び第2側壁26の前端は、最も前方に位置して、容器本体2の前端に容器本体開口部21を形成する開口周縁部28を構成する。第1側壁25の前端は、左方へ延びる左開口フランジ部251を有している。また、第2側壁26の前端は、右方へ延びる右開口フランジ部261を有している。基板収容空間27は、第1側壁25と第2側壁26との間に形成されている。 The front end of the upper wall 23, the front end of the first side wall 25, and the front end of the second side wall 26 are located at the foremost side, and constitute an opening peripheral portion 28 that forms the container main body opening 21 at the front end of the container main body 2. . The front end of the first side wall 25 has a left opening flange portion 251 extending leftward. The front end of the second side wall 26 has a right opening flange portion 261 that extends rightward. The substrate housing space 27 is formed between the first side wall 25 and the second side wall 26.
 また、第1側壁25の後部、及び第2側壁26の後部は、後方へ行くにつれて左右方向D3における幅が小さくなる基板後部当接壁252、262(図3等参照)を有している。基板後部当接壁252、262には、基板収容空間27内に収容された基板Wの後部の縁部が当接する。これにより、基板Wの後方への移動が規制される。また、第1側壁25の後部、及び第2側壁26の後部は、第1側壁25の基板後部当接壁252、第2側壁26の基板後部当接壁262からそれぞれ後方へ延びる後方延出壁253、263を有している。後方延出壁253、263は、平行の位置関係を有している。後方延出壁253の後端と後方延出壁263の後端は、図2に示すように、正面視で長方形状の奥側開口部22を形成する。 Also, the rear part of the first side wall 25 and the rear part of the second side wall 26 have substrate rear contact walls 252 and 262 (see FIG. 3 and the like) that decrease in width in the left-right direction D3 as going backward. The rear edge of the substrate W accommodated in the substrate accommodating space 27 abuts on the substrate rear abutting walls 252 and 262. Thereby, the movement to the back of the board | substrate W is controlled. Further, the rear part of the first side wall 25 and the rear part of the second side wall 26 are rear extension walls extending rearward from the substrate rear part contact wall 252 of the first side wall 25 and the substrate rear part contact wall 262 of the second side wall 26, respectively. 253, 263. The rear extension walls 253 and 263 have a parallel positional relationship. As shown in FIG. 2, the rear end of the rear extension wall 253 and the rear end of the rear extension wall 263 form a rectangular rear opening 22 in a front view.
 また、図1に示すように、下壁24は、下方視で略H形状を有している。下壁24は、左側延出部241と、右側延出部242と、中央連結部243とを有する。左側延出部241は、第1側壁25の下端に沿って、第1側壁25の下端の後端から前端近傍まで延びている。右側延出部242は、第2側壁26の下端に沿って、第2側壁26の下端の後端から前端近傍まで延びている。中央連結部243は、左側延出部241及び右側延出部242と一体成形されて、左側延出部241と右側延出部242とを掛け渡すようにしてこれらを連結している。 Moreover, as shown in FIG. 1, the lower wall 24 has a substantially H shape in a downward view. The lower wall 24 includes a left extension 241, a right extension 242, and a central connection part 243. The left extension 241 extends from the rear end of the first side wall 25 to the vicinity of the front end along the lower end of the first side wall 25. The right extension 242 extends from the rear end of the second side wall 26 to the vicinity of the front end along the lower end of the second side wall 26. The central connecting portion 243 is integrally formed with the left extending portion 241 and the right extending portion 242, and connects the left extending portion 241 and the right extending portion 242 so as to be bridged.
 壁部20の内面、即ち、上壁23の内面231(図2等参照)、下壁24の内面245、一方の内面としての第1側壁25の内面255、及び他方の内面としての第2側壁26の内面265は、これらによって取り囲まれた基板収容空間27(図1等参照)を形成している。第2側壁26の内面265は、第1側壁25の内面255に平行な位置関係を有して、第1側壁25に対向する。図2に示すように、第1側壁25の内面255及び第2側壁26の内面265は、前後方向D1及び上下方向D2に平行な位置関係を有している。基板収容空間27には、最大で12枚の基板Wを収納可能である。 The inner surface of the wall portion 20, that is, the inner surface 231 (see FIG. 2) of the upper wall 23, the inner surface 245 of the lower wall 24, the inner surface 255 of the first side wall 25 as one inner surface, and the second side wall as the other inner surface. An inner surface 265 of 26 forms a substrate housing space 27 (see FIG. 1 and the like) surrounded by these. The inner surface 265 of the second side wall 26 has a positional relationship parallel to the inner surface 255 of the first side wall 25 and faces the first side wall 25. As shown in FIG. 2, the inner surface 255 of the first side wall 25 and the inner surface 265 of the second side wall 26 have a positional relationship parallel to the front-rear direction D1 and the up-down direction D2. A maximum of 12 substrates W can be stored in the substrate storage space 27.
 基板支持板状部50、60は、第1側壁25及び第2側壁26にそれぞれ設けられて、左右方向D3において対をなすようにして基板収容空間27内に配置されている。具体的には、図1、図2に示すように、基板支持板状部50は、第1側壁25の内面255において13枚設けられている。基板支持板状部50は、第1側壁25と一体成形されており、第1側壁25の前端から基板後部当接壁252の前後方向D1における略中央位置に至るまで延びるとともに、基板収容空間27の内方へ平行に延出している。 The substrate support plate portions 50 and 60 are provided in the first side wall 25 and the second side wall 26, respectively, and are arranged in the substrate housing space 27 so as to form a pair in the left-right direction D3. Specifically, as shown in FIGS. 1 and 2, 13 substrate support plate-like portions 50 are provided on the inner surface 255 of the first side wall 25. The substrate support plate-like portion 50 is integrally formed with the first side wall 25, extends from the front end of the first side wall 25 to a substantially central position in the front-rear direction D 1 of the substrate rear contact wall 252, and also includes the substrate accommodation space 27. It extends parallel to the inside.
 図4に示すように、基板支持板状部50の延出する方向は、右方向D32に平行に延びる第1側壁25の内面255の法線255Aに対して交差する方向、具体的には、第1側壁25の内面255の法線255Aに対して、基板支持板状部50間に形成された溝256の上面と溝256の下面との中央に位置する仮想平面256Aが、上方へ5°以上15°以下の角度θをなす方向である。角度θを5°以上としたのは、5°未満では、溝256に基板Wの縁部を挿入し易いという効果を得られないからである。角度θを15°以下としたのは、最大の反り量WPを有する基板Wの場合であっても、15°を超えてしまうと、溝256に基板Wの縁部を挿入しにくくなるからである。本実施形態では、第1側壁25の内面255の法線255Aに対して、上方へ10°の角度θをなす方向である。左右方向D3における内面255からの基板支持板状部50の延出長さは、12.5mm程度である。上下方向D2における基板支持板状部50の厚さは、6.8mm程度である。 As shown in FIG. 4, the extending direction of the substrate support plate-like portion 50 is a direction intersecting with the normal line 255A of the inner surface 255 of the first side wall 25 extending in parallel to the right direction D32, specifically, An imaginary plane 256A located at the center between the upper surface of the groove 256 and the lower surface of the groove 256 formed between the substrate support plate-like portions 50 is 5 ° upward with respect to the normal line 255A of the inner surface 255 of the first side wall 25. The direction is an angle θ of 15 ° or less. The reason why the angle θ is set to 5 ° or more is that if the angle θ is less than 5 °, the effect that the edge of the substrate W can be easily inserted into the groove 256 cannot be obtained. The reason why the angle θ is set to 15 ° or less is that, even in the case of the substrate W having the maximum warping amount WP, if it exceeds 15 °, it becomes difficult to insert the edge of the substrate W into the groove 256. is there. In the present embodiment, it is a direction that forms an angle θ of 10 ° upward with respect to the normal line 255 </ b> A of the inner surface 255 of the first side wall 25. The extension length of the substrate support plate-like portion 50 from the inner surface 255 in the left-right direction D3 is about 12.5 mm. The thickness of the board | substrate support plate-shaped part 50 in the up-down direction D2 is about 6.8 mm.
 基板支持板状部50間に形成された溝256は、計12筋形成されている。溝256の幅は、2.7mm程度である。また、溝256の後端部に相当する基板後部当接壁262の部分には、水切り用貫通孔257(図3等参照)が形成されている。水切り用貫通孔257は、基板収容空間27内と基板収容空間27外とを連通する。また、図3に示すように、溝256の底部には、溝256が延びている前後方向D1に沿って延びる貫通孔258が形成されている。貫通孔258は、基板収容空間27内と基板収容空間27外とを連通する。溝256には、基板Wの縁部をそれぞれ1枚ずつ挿入可能である。 The grooves 256 formed between the substrate support plate portions 50 are formed in a total of 12 lines. The width of the groove 256 is about 2.7 mm. Further, a draining through hole 257 (see FIG. 3 and the like) is formed in a portion of the substrate rear contact wall 262 corresponding to the rear end portion of the groove 256. The draining through hole 257 communicates the inside of the substrate housing space 27 and the outside of the substrate housing space 27. Further, as shown in FIG. 3, a through hole 258 extending along the front-rear direction D <b> 1 in which the groove 256 extends is formed at the bottom of the groove 256. The through hole 258 communicates the inside of the substrate accommodation space 27 and the outside of the substrate accommodation space 27. One edge of the substrate W can be inserted into each of the grooves 256.
 同様に、基板支持板状部60は、第2側壁26の内面265において13枚設けられている。基板支持板状部60は、第2側壁26と一体成形されており、図3に示すように、第2側壁26の前端から、基板後部当接壁262の前後方向D1における略中央位置に至るまで延びるとともに、基板収容空間27の内方へ平行に延出している。図4に示すように、基板支持板状部60の延出する方向は、左右方向D3に平行に延びる第2側壁26の内面265の法線265Aに対して、基板支持板状部60間に形成された溝266の上面と溝266の下面との中央に位置する仮想平面266Aが、平行をなす方向(一致する方向)である。左右方向D3における内面265からの基板支持板状部60の延出長さは、12.5mm程度である。上下方向D2における基板支持板状部60の厚さは、3.2mm程度である。 Similarly, 13 substrate support plate portions 60 are provided on the inner surface 265 of the second side wall 26. The substrate support plate-like portion 60 is integrally formed with the second side wall 26, and as shown in FIG. 3, reaches from the front end of the second side wall 26 to a substantially central position in the front-rear direction D1 of the substrate rear contact wall 262. And extends parallel to the inside of the substrate housing space 27. As shown in FIG. 4, the extending direction of the substrate support plate-like portion 60 is between the substrate support plate-like portions 60 with respect to the normal line 265A of the inner surface 265 of the second side wall 26 extending parallel to the left-right direction D3. A virtual plane 266A located at the center between the upper surface of the formed groove 266 and the lower surface of the groove 266 is a parallel direction (coincident direction). The extension length of the substrate support plate-like portion 60 from the inner surface 265 in the left-right direction D3 is about 12.5 mm. The thickness of the board | substrate support plate-shaped part 60 in the up-down direction D2 is about 3.2 mm.
 図4に示すように、基板支持板状部50の延出長さA1と基板支持板状部60の延出長さB1の関係は、基板支持板状部60の延出長さB1が基板支持板状部50の延出長さA1よりも長い(B1>A1)ことが好ましい。基板支持板状部60の延出長さB1は、12.5mm~15mmの範囲であることが好ましい。この範囲にあると、基板Wを非対称溝形状ウェーハカセット1内に安定して保持することができる。一方で、基板支持板状部50の長さA1をB1よりも短くすることにより、反りを持った基板Wが基板支持板状部50の上面に当たり、基板Wを下方に押さえる力がはたらいて、基板Wに割れが生じることを、極力回避することができる。 As shown in FIG. 4, the relationship between the extension length A1 of the substrate support plate-like portion 50 and the extension length B1 of the substrate support plate-like portion 60 is such that the extension length B1 of the substrate support plate-like portion 60 is the substrate. It is preferable that the extension length A1 of the support plate-like portion 50 is longer (B1> A1). The extension length B1 of the substrate support plate-like portion 60 is preferably in the range of 12.5 mm to 15 mm. Within this range, the substrate W can be stably held in the asymmetric groove-shaped wafer cassette 1. On the other hand, by making the length A1 of the substrate support plate-like portion 50 shorter than B1, the warped substrate W hits the upper surface of the substrate support plate-like portion 50, and the force that presses the substrate W downward works. It is possible to avoid the occurrence of cracks in the substrate W as much as possible.
 基板支持板状部60間に形成された溝266は、計12筋形成されている。溝266の幅は、6.3mm程度であり、第1側壁25の基板支持板状部50の間に形成された溝256の幅よりも大きい。また、溝266の後端部に相当する基板後部当接壁262の部分には、水切り用貫通孔267が形成されている。水切り用貫通孔267は、基板収容空間27内と基板収容空間27外とを連通する。また、図3に示すように、溝266の底部には、溝266が延びている前後方向D1に沿って延びる貫通孔268が形成されている。貫通孔268は、基板収容空間27内と基板収容空間27外とを連通する。溝266には、基板Wの縁部をそれぞれ1枚ずつ挿入可能である。 The grooves 266 formed between the substrate support plate portions 60 are formed in a total of 12 lines. The width of the groove 266 is about 6.3 mm, which is larger than the width of the groove 256 formed between the substrate support plate-like portions 50 of the first side wall 25. Further, a draining through hole 267 is formed in a portion of the substrate rear contact wall 262 corresponding to the rear end portion of the groove 266. The draining through-hole 267 communicates the inside of the substrate housing space 27 and the outside of the substrate housing space 27. As shown in FIG. 3, a through hole 268 extending along the front-rear direction D <b> 1 in which the groove 266 extends is formed at the bottom of the groove 266. The through hole 268 communicates the inside of the substrate housing space 27 and the outside of the substrate housing space 27. One edge of the substrate W can be inserted into each of the grooves 266.
 図4に示すように、第1側壁25の基板支持板状部50の間に形成された溝256の開口部255Bと、第2側壁26の基板支持板状部60の間に形成された溝266の開口部265Bとは対向している。この構成により、第1側壁25の基板支持板状部50の間に形成された溝256と、第2側壁26の基板支持板状部60の間に形成された溝266とに、基板Wの縁部が挿入されることにより、基板Wの縁部が側方基板支持部としての基板支持板状部50、60に支持される。 As shown in FIG. 4, a groove formed between the opening portion 255 </ b> B of the groove 256 formed between the substrate support plate-like portions 50 of the first side wall 25 and the substrate support plate-like portion 60 of the second side wall 26. It faces the opening 265B of 266. With this configuration, the groove 256 formed between the substrate support plate-like portions 50 on the first side wall 25 and the groove 266 formed between the substrate support plate-like portions 60 on the second side wall 26 are formed on the substrate W. By inserting the edge portion, the edge portion of the substrate W is supported by the substrate support plate- like portions 50 and 60 as the side substrate support portions.
 また、上述のような構成から、図2に示すように、左右方向D3における基板収容空間27の中央位置を通り、前後方向D1及び上下方向D2に平行な仮想平面Cに関して、第1側壁25の基板支持板状部50と、第2側壁26の基板支持板状部60とは非対称形状を有している。このため、第1側壁25の基板支持板状部50の間に形成された溝256の形状と、第2側壁26の基板支持板状部60の間に形成された溝266の形状とは、異なっている。 Further, from the configuration as described above, as shown in FIG. 2, the first side wall 25 has a virtual plane C that passes through the center position of the substrate housing space 27 in the left-right direction D3 and is parallel to the front-rear direction D1 and the up-down direction D2. The substrate support plate-like portion 50 and the substrate support plate-like portion 60 of the second side wall 26 have an asymmetric shape. For this reason, the shape of the groove 256 formed between the substrate support plate-like portions 50 of the first side wall 25 and the shape of the groove 266 formed between the substrate support plate-like portions 60 of the second side wall 26 are: Is different.
 なお、図2では、反り量が最大の基板Wを溝256、266に挿入した様子を図示したが、実際には、図2に示す基板Wよりも反り量が小さい基板Wが、主として溝256、266に挿入され、基板収容空間27内において収容される。従って、実際には、溝256の上面と溝256の下面との中央に位置する仮想平面256Aと、溝256に収容された基板Wの上面(表面W11)及び下面(裏面W12)とは、略並行な位置関係を有する。 In FIG. 2, the state in which the substrate W having the maximum warpage is inserted into the grooves 256 and 266 is illustrated, but actually, the substrate W having a smaller warpage than the substrate W shown in FIG. 266 and accommodated in the substrate accommodating space 27. Therefore, actually, the virtual plane 256A located at the center between the upper surface of the groove 256 and the lower surface of the groove 256, and the upper surface (front surface W11) and the lower surface (back surface W12) of the substrate W accommodated in the groove 256 are substantially the same. Has a parallel positional relationship.
 上記構成の第1実施形態による非対称溝形状ウェーハカセット1によれば、以下のような効果を得ることができる。
 上述のように、一方の側壁としての第1側壁25に設けられた複数の基板支持板状部50は、一方の内面としての第1側壁25の内面255の法線255Aに対して交差する方向へ延出している。そして、他方の側壁としての第2側壁26に設けられた複数の基板支持板状部60が、第1側壁25に設けられた複数の基板支持板状部50とは非対称の形状を有することにより、第1側壁25の基板支持板状部50間の溝256の形状と、第2側壁26の基板支持板状部60間の溝266の形状とは異なる。
According to the asymmetric groove-shaped wafer cassette 1 according to the first embodiment having the above-described configuration, the following effects can be obtained.
As described above, the plurality of substrate support plate-like portions 50 provided on the first side wall 25 as one side wall intersect with the normal line 255A of the inner surface 255 of the first side wall 25 as one inner surface. It extends to. The plurality of substrate support plate-like portions 60 provided on the second side wall 26 as the other side wall have an asymmetric shape with the plurality of substrate support plate-like portions 50 provided on the first side wall 25. The shape of the groove 256 between the substrate support plate-like portions 50 of the first side wall 25 is different from the shape of the groove 266 between the substrate support plate-like portions 60 of the second side wall 26.
 この構成により、全体として反った形状を有して反り量の大きな基板Wの縁部を、確実に溝256、266に挿入させることができる。この結果、反った形状を有する基板Wを基板収容空間27に収容することができる。また、容器本体開口部21を上方に位置させ、奥側開口部22を下方に位置させた状態とするいわゆる縦置きの状態としたときに、基板Wが溝256、266内においてバタつくことを抑制することができる。 With this configuration, the edge portion of the substrate W having a warped shape as a whole and a large amount of warpage can be surely inserted into the grooves 256 and 266. As a result, the substrate W having a warped shape can be accommodated in the substrate accommodating space 27. Further, when the container body opening 21 is positioned upward and the back opening 22 is positioned downward, the substrate W flutters in the grooves 256 and 266 when the so-called vertical position is set. Can be suppressed.
 また、他方の側壁としての第2側壁26に設けられた複数の基板支持板状部60は、他方の内面としての第2側壁26の内面265の法線265Aに平行に延出し、第2側壁26の複数の基板支持板状部60間における溝266の幅は、一方の側壁としての第1側壁25の複数の基板支持板状部50間における溝256の幅よりも大きい。 Further, the plurality of substrate support plate-like portions 60 provided on the second side wall 26 as the other side wall extend in parallel to the normal line 265A of the inner surface 265 of the second side wall 26 as the other inner surface, and the second side wall The width of the groove 266 between the plurality of substrate support plate portions 60 of the 26 is larger than the width of the groove 256 between the plurality of substrate support plate portions 50 of the first side wall 25 as one side wall.
 この構成により、作業者が目視により基板Wを溝256、266に挿入するマニュアル操作により、基板Wを溝256、266に挿入する際に、目視により、第1側壁25の基板支持板状部50間の溝256に基板Wの縁部を挿入することによって、目視をせずに、第2側壁26の基板支持板状部60の溝266に、基板Wの反対側の端部を挿入可能とすることができる。即ち、基板Wの反り量と、基板支持板状部50の延出する方向とを考慮して、第2側壁26の複数の基板支持板状部60間における溝266の幅を、適切に広くする。これにより、目視によって、第1側壁25の基板支持板状部50間の溝256に基板Wの縁部を挿入することにより、目視をせずに、第2側壁26の基板支持板状部60の溝266に、基板Wの反対側の端部を挿入可能とすることができる。また、溝266が形成された基板支持板状部60が設けられた第2側壁26の成形を、容易とすることができる。 With this configuration, when the operator inserts the substrate W into the grooves 256 and 266 by a manual operation of visually inserting the substrate W into the grooves 256 and 266, the substrate support plate-like portion 50 of the first side wall 25 is visually observed. By inserting the edge of the substrate W into the groove 256 between them, the opposite end of the substrate W can be inserted into the groove 266 of the substrate support plate-like portion 60 of the second side wall 26 without visual inspection. can do. That is, considering the amount of warpage of the substrate W and the direction in which the substrate support plate portion 50 extends, the width of the groove 266 between the plurality of substrate support plate portions 60 of the second side wall 26 is appropriately increased. To do. Accordingly, the edge of the substrate W is inserted into the groove 256 between the substrate supporting plate-like portions 50 of the first side wall 25 by visual observation, so that the substrate supporting plate-like portion 60 of the second side wall 26 is not visually observed. The opposite end of the substrate W can be inserted into the groove 266. Further, it is possible to easily form the second side wall 26 provided with the substrate support plate-like portion 60 in which the groove 266 is formed.
 また、一方の側壁としての第1側壁25に設けられた複数の基板支持板状部50は、一方の内面としての第1側壁25の内面255の法線255Aに対して5°以上15°以下の角度θで交差する方向へ延出する。このため、第1側壁25の基板支持板状部50間の溝256への基板Wの挿入を、より確実に容易とすることができる。 In addition, the plurality of substrate support plate-like portions 50 provided on the first side wall 25 as one side wall are 5 ° or more and 15 ° or less with respect to the normal line 255A of the inner surface 255 of the first side wall 25 as one inner surface. It extends in the direction that intersects at the angle θ. For this reason, the insertion of the substrate W into the groove 256 between the substrate support plate-like portions 50 of the first side wall 25 can be facilitated more reliably.
 本発明は、上述した実施形態に限定されることはなく、特許請求の範囲に記載された技術的範囲において変形が可能である。例えば、溝256、266は、それぞれ12筋形成されていたが、この数に限定されない。即ち、基板支持板状部50、基板支持板状部60の数も13に限定されない。 The present invention is not limited to the above-described embodiment, and can be modified within the technical scope described in the claims. For example, the grooves 256 and 266 are each formed with 12 lines, but the number is not limited to this. That is, the number of substrate support plate-like portions 50 and substrate support plate-like portions 60 is not limited to 13.
 また、第2側壁26に設けられた複数の基板支持板状部60は、第2側壁26の内面265の法線265Aに平行に延出し、第2側壁26の複数の基板支持板状部60間における溝266の幅は、第1側壁25の複数の基板支持板状部50間における溝256の幅よりも大きく構成されたが、この構成に限定されない。他方の側壁に設けられた複数の基板支持板状部が、一方の側壁に設けられた複数の基板支持板状部とは非対称の形状を有することにより、一方の側壁の基板支持板状部間の溝の形状と、他方の側壁の基板支持板状部間の溝の形状とが、異なっていればよい。 The plurality of substrate support plate-like portions 60 provided on the second side wall 26 extend parallel to the normal line 265A of the inner surface 265 of the second side wall 26, and the plurality of substrate support plate-like portions 60 on the second side wall 26. The width of the groove 266 in between is configured to be larger than the width of the groove 256 between the plurality of substrate support plate-like portions 50 of the first side wall 25, but is not limited to this configuration. The plurality of substrate support plate-like portions provided on the other side wall have an asymmetric shape with respect to the plurality of substrate support plate-like portions provided on the one side wall, so that between the substrate support plate-like portions on one side wall The shape of the groove and the shape of the groove between the substrate support plate portions on the other side wall may be different.
 また、上壁23、下壁24、第1側壁25、及び第2側壁26は、PEEK樹脂により一体成形されて構成されていたが、PEEK樹脂に限定されない。上壁23、下壁24、第1側壁25、及び第2側壁26には、例えば、汎用の樹脂、例えば、PFA(フッ素樹脂)やPP(ポリプロピレン)等が用いられても良い。 Moreover, although the upper wall 23, the lower wall 24, the 1st side wall 25, and the 2nd side wall 26 were integrally formed by PEEK resin, it is not limited to PEEK resin. For the upper wall 23, the lower wall 24, the first side wall 25, and the second side wall 26, for example, a general-purpose resin such as PFA (fluororesin) or PP (polypropylene) may be used.
 また、上壁23、下壁24、第1側壁25、及び、第2側壁26の形状は、本実施の形態の形状に限定されない。同様に、各部の寸法の値は、本実施形態に記載の寸法の値に限定されない。また、本実施形態における基板Wは、直径4インチ、厚さが0.1mm程度の略円盤状のサファイアウェーハであったが、この寸法に限定されない。 Further, the shapes of the upper wall 23, the lower wall 24, the first side wall 25, and the second side wall 26 are not limited to the shapes of the present embodiment. Similarly, the dimension value of each part is not limited to the dimension value described in the present embodiment. The substrate W in this embodiment is a substantially disk-shaped sapphire wafer having a diameter of 4 inches and a thickness of about 0.1 mm, but is not limited to this dimension.
1 非対称溝形状ウェーハカセット
25 第1側壁(一対の側壁)
26 第2側壁(一対の側壁)
27 基板収容空間
50、60 基板支持板状部(側方基板支持部)
255 内面(一方の内面)
255A、265A 法線
256、266 溝
265 内面(他方の内面)
W 基板
 
1 Asymmetric groove-shaped wafer cassette 25 First side wall (a pair of side walls)
26 Second side wall (a pair of side walls)
27 Substrate accommodation space 50, 60 Substrate support plate-like portion (side substrate support portion)
255 Inner surface (one inner surface)
255A, 265A Normal line 256, 266 Groove 265 Inner surface (the other inner surface)
W substrate

Claims (3)

  1.  一対の側壁と、
     前記一対の側壁間に形成され複数の基板を収容可能な基板収容空間内において、対をなすように前記一対の側壁のそれぞれに形成され、前記複数の基板のうちの隣接する基板同士を所定の間隔で離間させて並列させた状態で、前記複数の基板の縁部を支持可能な側方基板支持部と、を備え、
     一方の前記側壁は、他方の前記側壁に対向する一方の内面を有し、他方の前記側壁は、前記一方の内面に平行な位置関係を有して前記一方の内面に対向する他方の内面を有し、
     前記側方基板支持部は、前記一方の内面と前記他方の内面とのそれぞれにおいて、前記基板収容空間の内方へ平行に延出する複数の基板支持板状部を有し、
     複数の前記基板支持板状部間には、前記複数の基板の縁部を挿入可能な溝が形成され、前記一方の側壁の複数の前記基板支持板状部間の溝と前記他方の側壁の複数の前記基板支持板状部間の溝とは対向し、前記一方の側壁の複数の前記基板支持板状部間の溝と前記他方の側壁の複数の前記基板支持板状部間の溝とに前記基板の縁部が挿入されることにより前記基板の縁部が前記側方基板支持部に支持され、
     前記一方の側壁に設けられた複数の前記基板支持板状部は、前記一方の内面の法線に対して交差する方向へ延出し、
     前記他方の側壁に設けられた複数の前記基板支持板状部が、一方の側壁に設けられた複数の基板支持板状部とは非対称の形状を有することにより、前記一方の側壁の前記基板支持板状部間の溝の形状と、前記他方の側壁の前記基板支持板状部間の溝の形状とは異なる非対称溝形状ウェーハカセット。
    A pair of side walls;
    In the substrate accommodation space formed between the pair of side walls and capable of accommodating a plurality of substrates, each pair of the side walls is formed to form a pair, and adjacent substrates of the plurality of substrates are defined to each other. A side substrate support portion capable of supporting the edge portions of the plurality of substrates in a state of being spaced apart and arranged in parallel,
    The one side wall has one inner surface facing the other side wall, and the other side wall has the other inner surface facing the one inner surface having a positional relationship parallel to the one inner surface. Have
    The side substrate support portion has a plurality of substrate support plate-like portions extending in parallel to the inside of the substrate accommodation space on each of the one inner surface and the other inner surface,
    A groove is formed between the plurality of substrate support plate-like portions, into which edges of the plurality of substrates can be inserted, and the groove between the plurality of substrate support plate-like portions on the one side wall and the other side wall Grooves between the plurality of substrate support plate-like portions facing each other, grooves between the plurality of substrate support plate-like portions on the one side wall, and grooves between the plurality of substrate support plate-like portions on the other side wall The edge portion of the substrate is supported by the side substrate support portion by inserting the edge portion of the substrate into,
    The plurality of substrate support plate-like portions provided on the one side wall extend in a direction intersecting with the normal line of the one inner surface,
    The plurality of substrate support plate-like portions provided on the other side wall have an asymmetric shape with the plurality of substrate support plate-like portions provided on the one side wall, whereby the substrate support on the one side wall is provided. An asymmetric groove-shaped wafer cassette in which the shape of the groove between the plate-like portions is different from the shape of the groove between the substrate support plate-like portions on the other side wall.
  2.  前記他方の側壁に設けられた複数の前記基板支持板状部は、前記他方の内面の法線に平行に延出し、
     前記他方の側壁の複数の前記基板支持板状部間における溝の幅は、前記一方の側壁の複数の前記基板支持板状部間における溝の幅よりも大きい請求項1に記載の非対称溝形状ウェーハカセット。
    The plurality of substrate support plate-like portions provided on the other side wall extend in parallel to the normal line of the other inner surface,
    2. The asymmetric groove shape according to claim 1, wherein a width of a groove between the plurality of substrate support plate-like portions on the other side wall is larger than a width of a groove between the plurality of substrate support plate-like portions on the one side wall. Wafer cassette.
  3.  前記一方の側壁に設けられた複数の前記基板支持板状部は、前記一方の内面の法線に対して5°以上15°以下の角度で交差する方向へ延出する請求項1又は請求項2に記載の非対称溝形状ウェーハカセット。
     
    The plurality of substrate support plate-like portions provided on the one side wall extend in a direction intersecting at an angle of 5 ° or more and 15 ° or less with respect to a normal line of the one inner surface. 2. An asymmetric groove-shaped wafer cassette according to 2.
PCT/JP2014/055360 2013-04-30 2014-03-04 Wafer cassette having asymmetric groove shape WO2014178223A1 (en)

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