WO2015006186A1

WO2015006186A1 - Thickness control variation

Info

Publication number: WO2015006186A1
Application number: PCT/US2014/045529
Authority: WO
Inventors: Lance A. Scudder; David K. Carlson; Brian H. Burrows; James M. Gee
Original assignee: Applied Materials, Inc.
Priority date: 2013-07-09
Filing date: 2014-07-07
Publication date: 2015-01-15
Also published as: CN205845916U

Abstract

Embodiments described herein generally relate to an apparatus for processing substrates having varying thicknesses. In kerfless substrate processes, a template may be reused many times to form substrates. Many deposition processes affected by the flow dynamics of process gases are generally sensitive to many variables, such as thickness of the substrate being processed with relation to a susceptor surface within which the substrate may be disposed. The substrate may be disposed in a recess such that a top surface of the substrate and a surface of the susceptor are substantially coplanar. Thus, film deposition uniformity may be improved.

Description

THICKNESS CONTROL VARIATION

BACKGROUND

Field

[0001] Embodiments described herein generally relate to an apparatus for transferring kerfless substrates of varying thicknesses through CVD chambers. More specifically, embodiments described herein relate to thickness control variation.

Description of the Related Art

[0002] In semiconductor processing, a substrate is subjected to various processes, such as chemical vapor deposition (CVD) processes, to fabricate various devices on the substrate. In general, the substrate is used only once and is ultimately portioned into a number of devices. In the solar industry, the cost of silicon associated with a single substrate accounts for approximately 40% of the ultimate solar cell module cost. The high cost of silicon is an important limitation on the viability and cost effectiveness of solar technology.

[0003] Kerfless silicon is a technology where a single silicon template is provided and may be reused multiple times as the substrate for semiconductor processing. A single kerfless substrate may serve as a template for creating many individual substrates which may reduce the cost associated with fabricating substrates from silicon. The kerfless substrate template, such as a monocrystalline silicon substrate, is generally subjected to a cleaving process where a portion of the template is removed which then serves as a substrate for fabricating various semiconductor devices. Generally, an epitaxial deposition process may be performed prior to cleavage of the substrate to form a high quality silicon substrate. The template may then be reused many times but the thickness of the template will be reduced over time as the template is reused.

[0004] Many semiconductor processes are carefully controlled to account for various processing parameters, such as deposition uniformity, when the process results are sensitive to a gas flow field. The gas flow may be especially sensitive to geometry of the apparatus within which the template is held. Moreover, handling of substrates may depend upon the thickness of the substrate. In kerfless silicon processes, the thickness of the template is reduced each time the template is reused. The change in thickness of the template may adversely affect the processes performed thereon if the processes do not account for the change in thickness of the template.

[0005] Thus, what is needed in the art are apparatuses which account for thickness variation of a kerfless silicon substrate.

SUMMARY

[0006] Embodiments described herein generally relate to an apparatus for thickness control variation.

[0007] In one embodiment, an apparatus for processing substrates is provided. The apparatus may comprise a first carrier having a first plurality of recesses formed therein, a second carrier having a second plurality of recesses formed therein, and one or more sidewalls coupling the first carrier and the second carrier. The apparatus may also have a V-shaped processing volume comprising an opening and a vertex. The first plurality of recesses and the second plurality of recesses may be positioned to oppose one another.

[0008] In another embodiment, an apparatus for processing substrates is provided. The apparatus may comprise a first carrier and a second carrier having a plurality of recesses having a first depth formed therein. One or more sidewalls may coupled the first carrier and the second carrier and a V- shaped processing volume may comprise an opening and a vertex. The plurality of recesses of the first carrier and the plurality of recesses of the second carrier may be positioned to oppose one another.

[0009] In yet another embodiment, an apparatus for processing substrates is provided. The apparatus may comprise a first carrier having a first plurality of recesses formed therein and a second carrier disposed parallel to the first carrier. The second carrier may have a second plurality of recesses formed therein and the second plurality of recesses may be positioned to oppose the first plurality of recesses. One or more sidewalls may couple the first carrier and the second carrier and a substantially volumetrically constant processing cavity may be formed between the first carrier, second carrier, and the one or more sidewalls.

BRIEF DESCRIPTION OF THE DRAWINGS

[0010] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.

[0011] Figures 1A-1 E depict a kerfless substrate at various stages of processing.

[0012] Figure 2 is a cross-sectional perspective view of a carrier apparatus.

[0013] Figure 3 is a perspective view of a carrier apparatus.

[0014] Figure 4A is a perspective view of a process module.

[0015] Figure 4B is a perspective view of the process module of Figure 4A having the carrier apparatus of Figure 3 disposed therein.

[0016] Figure 5 is a schematic view of a linear processing apparatus.

[0017] Figure 6 is a plan view of a substrate carrier.

[0018] Figures 7A- 7D are cross-sectional views of carrier apparatuses. [0019] Figure 8 is a cross-sectional view of a carrier apparatus.

[0020] Figure 9 is a cross-sectional view of a carrier apparatus.

[0021] Figure 10 is a cross-sectional view of a carrier apparatus.

[0022] Figure 1 1 is a cross-sectional view of a carrier apparatus.

[0023] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.

DETAILED DESCRIPTION

[0024] Embodiments described herein generally relate to an apparatus for processing substrates having varying thicknesses. In kerfless substrate processes, a template may be reused many times to form substrates. With each reuse, a thickness of the template changes. Deposition processes affected by the flow dynamics of process gases are generally sensitive to many variables, such as thickness of the substrate being processed with relation to a susceptor surface within which the substrate may be disposed. With a reused template, as the thickness of the template changes, the reaction volume and boundary layer dynamics change and the result of a given process changes, causing non-uniformity from process to process. To counteract this non-uniformity, templates are disposed in a recess having a depth that conforms to the template thickness. The depth of the recess may be selected such that a top surface of the substrate and a surface of the susceptor are substantially coplanar.

[0025] Generally, a silicon CVD deposition process may proceed within a mass transport regime. Process gases provided to a substrate will generally diffuse across a boundary layer, adsorb onto the surface of the substrate, migrate and dissociate on the surface of the substrate, nucleate and grow from the surface of the substrate, exit the surface of the substrate by desorption, and diffuse back across the boundary layer. The amount of time the deposition process is performed affects the amount of material deposited on the substrate. Deposition uniformity on the substrate may be controlled by the boundary layer thickness, process gas mass transport across the boundary layer, and the reactive species reaction rate on the substrate surface.

[0026] Flow dynamics of the process gases strongly influence boundary layer thickness. The substrate being processed may be held within a recess, or pocket, of a susceptor or carrier. The boundary layer thickness may be influenced by the depth of the substrate disposed in a recess below a surface of the susceptor. For example, a 1000 μιτι thick substrate processed in the same susceptor as a 250 μιτι thick substrate would experience a shift of 750 μιτι relative to the susceptor surface. As previously mentioned, the change in thickness and the relation to the susceptor surface greatly influences the boundary layer which ultimately influences deposition uniformity.

[0027] Figures 1A-1 E depict an example of a kerfless substrate at various stages of processing. Figure 1A depicts a template 102, such a silicon monocrystalline substrate, which may serve as a template for silicon substrates. The template 102 may have a thickness between about 700 μιτι and about 1300 μιτι, such as about 1000 μιτι. The template 102 may have a surface 104 which may be subjected to various processes to form a kerfless substrate.

[0028] Figure 1 B depicts the template 102 having a bi-porous layer 1 10 formed thereon. The term "bi-porous" used herein may be defined as one or more layers having different degrees of porosity. The bi-porous layer 1 10 may comprise a high porous layer 106 and a low porous layer 108. The high porous layer 106 may have a greater density of pores than the low porous layer 108. A wet anodization process may be performed using a wet chemistry to form the bi-porous layer 1 10. For example, a wet chemistry comprising a solution of hydrogen fluoride, isopropyl alcohol, and de-ionized water may be provided to the template 102 and an electrical current may be applied to form the bi-porous layer 1 10 to drive ions of the wet chemistry solution into the template 102. The bi-porous layer 1 10 may have a thickness of between about 1 μιτι and about 10 μιτι, such as about 5 μιτι. The high porous layer 106 may have a thickness of between about 0.01 μιτι and about 0.50 μιτι, such as about 0.25 μιτι. After the bi-porous layer 1 10 has been formed on the template 102, the low porous layer 108 may be annealed to form a smooth silicon surface. The annealing process may proceed in a hydrogen environment and may be performed by various heating methods, such as laser annealing or heating lamps.

[0029] Figure 1 C depicts device substrate layer 1 12 formed on the low porous layer 108. The device substrate layer 1 12 may be deposited by a CVD process, such as a silicon epitaxial deposition process. It is contemplated that materials other than silicon, such as Group l l l-V materials and other Group IV may also be deposited by a CVD process. Figure 1 D depicts the device substrate layer 1 12 having a device 1 14 formed thereon and being separated from the template 102. The device 1 14 may be any device suitable for performing a desired function, such as a solar cell, logic device, memory device, or the like. The device substrate layer 1 12 may be separated from the template 102 by cleaving the high porous layer 106 (not shown), such as by a mechanical separation process or by an annealing process, such as laser annealing. After the device substrate layer 1 12 having the device 1 14 formed thereon has been cleaved from the template 102, the surface 104 of the template 102 may be annealed to smooth the template surface 104.

[0030] Figure 1 E depicts the template 102 after cleaving and smoothing. The thickness of the template 102 has been reduced by removal of material from the surface of the template 102. The thickness of the template 102 may be reduced by approximately the thickness of the bi-porous layer 1 10. The template may be reused many times but the thickness of the template 102 will be reduced for each subsequent process cycle. Thus, apparatuses for transferring and processing the template 102 that adapt to account for the variation in thickness of the template 102 are useful.

[0031] Figure 2 is a cross-section perspective view of a carrier apparatus 200. The carrier apparatus 200 may have a first carrier 202 which may have a first plurality of recesses 208 formed therein. A second carrier 204 may have a second plurality of recesses (not shown) formed therein. The first carrier 202 and the second carrier 204 may be positioned to oppose each other. One or more sidewalls 206 may couple the first carrier 202 and the second carrier 204. The first carrier 202, second carrier 204, and the one or more sidewalls 206 may comprise a graphite material. The graphite material may be coated with a ceramic material, such as silicon carbide. The coating may be formed on the graphite material by a CVD process and may have a thickness of between about 60 μιτι and about 120 μιτι.

[0032] The first carrier 202 and the second carrier 206 may oppose each other such that the first plurality of recesses 208 faces the second plurality of recesses. The carrier apparatus 200 may have an opening 201 where process gases may enter a process volume 205 and an exit region 203 where process gasses may be exhausted from the process volume 205. The process volume 205 may comprise a V shape such that the first carrier 202 and second carrier 204 form an angle from about 3° to about 6°. The angle may be measured from a hypothetical vertex, which may be a point at which the first carrier 202 and the second carrier 204 would intersect if the first carrier 202 and the second carrier 204 were extended to contact one another. The process volume 205 may gradually decrease from the opening 201 to the exit region 203. The volumetric decrease may be substantially linear from the opening 201 to the exit region 203.

[0033] In operation of a mass transport regime, the amount of reactive species within the process gas typically decreases as deposition continues.

The geometry of the process volume 205 influences film deposition. In a reaction scheme where precursors flow into the opening 201 , through the processing volume 205, and out through the exit region 203, reactive species are available at an initial concentration near the opening 201 . As deposition proceeds, reactive species are removed from the precursor gas flowing through the processing volume 205, and the amount of reactive species available for deposition on the substrates decreases as the process gas move toward the exit region 203. To counteract the continual reduction in reactive species, the process volume 205 may taper such that the process volume 205 volumetrically decreases from the opening 201 to the exit region 203. The decreasing processing volume 205 provides flow dynamics, such as a substrate deposition surface and a surface of a carrier being co-planar, of the process gas such that deposition on the substrates may be uniform for substrates disposed within the carrier apparatus 200 from the opening 201 to the exit region 203.

[0034] The first carrier 202 and the second carrier 204 may be coupled at the exit region 203 by a base member 218. The base member 218 may comprise a silicon carbide coated graphite material or a quartz material and may be adapted to mate with a track for transferring the carrier apparatus 200 through various processing modules in an inline processing apparatus. The base member 218 may have one or more exit ports disposed therethrough to allow process gases to be exhausted at the exit region 203 from the processing volume 205. As such, the processing volume 205 may be coupled to an exhaust system when the carrier apparatus 200 is being processed in a processing module.

[0035] In operation, the carrier apparatus 200 may be disposed in a frame apparatus 212 which may provide positional support for the carrier apparatus 200 during transport and processing. The frame apparatus 212 may have a top portion 214 which may support the carrier apparatus 200 near the opening and a bottom portion 210 which may be coupled to the base member 218. The base member 218 may be integrally disposed within the bottom portion 210. A surface of the base member 218 facing away from the processing volume 250 may form a rail having extensions that, together with the bottom portion 210 that may be adapted to mate with a track. The base member 218 may be coupled to the track or may slide along the track. The track may project through a process module. The frame apparatus 212 may comprise a silicon carbide, silicon carbide coated graphite, or a quartz material. A heat reflector 220 may be disposed adjacent to the one or more sidewalls 216 and may be disposed between the one or more sidewalls 206 and the frame apparatus 212. The heat reflector will be discussed in more detail with reference to Figure 3.

[0036] Figure 3 is a perspective view of a carrier apparatus 300. The carrier apparatus may be similar to the carrier apparatus 200 described with regard to Figure 2. A first carrier 202 and a second carrier 204 may be coupled by one or more sidewalls, such as a first sidewall 206 and a second sidewall 207. The first carrier 202 may have a first plurality of recesses (not shown) formed therein and the second carrier 204 may have a second plurality of recesses (not shown) formed therein. The first carrier 202 and second carrier 204 may oppose one another such that the first plurality of recesses and the second plurality of recesses face each other.

[0037] Similar to Figure 2, the base member 218 may be adapted to travel along a track 302. The base member 218 may mate directly with the track 302 or the bottom portion 210 (See Figure 2) may mate with the track 302. If sized properly, the bottom portion 210 may also eliminate the need for fabricating the track 302 from a heat resistant material. The track 302 may comprise a thermally stable material, such as opaque quartz or silicon carbide coated graphite, and may be adapted to move the carrier apparatus 300 along a linear path. One or more heat reflectors 220, 222 may also be coupled to the track 302. A first heat reflector 222 may be coupled to the track 302 adjacent to the first sidewall 206. The first heat reflector 222 may be spaced a distance from the first sidewall 206. The first heat reflector 222 may be adapted to travel along the track 302 such that the first heat reflector 222 maintains a fixed distance from the first sidewall 206 when the carrier apparatus 300 travels along the track 302. A second heat reflector 220 may be coupled to the track 302 adjacent to the second sidewall 207. The second heat reflector 222 may be spaced a distance from the second sidewall 207. The second heat reflector 220 may be adapted to travel along the track 302 such that the second heat reflector 220 maintains a fixed distance from the second sidewall 207 when the carrier apparatus 300 travels along the track 302. The bottom portion 210 (See Figure 2), may also be a heat reflector.

[0038] The heat reflectors 220, 222 may comprise a material which may be thermally stable at temperatures greater than about 1000°C, such as a quartz material. The quartz material may also be reflective which may cause electromagnetic radiation to be directed away from the quartz material. The reflective quartz material may direct stray radiation provided to the carrier apparatus 300 during processing away from the carrier apparatus 300. As such, the heat reflectors 220, 222 may form a heat shield to help control the temperature of the carrier apparatus 300. The heat reflectors 220, 222 may also be adapted to retain heat near the carrier apparatus 300 and control the temperature of the carrier apparatus 300 during processing.

[0039] Figure 4A is a perspective view of a process module 400. The process module 400 may comprise a processing chamber or may be disposed within a processing chamber. The process module 400 may have a frame 402 sized to allow a carrier apparatus, such as carrier apparatus 200 or carrier apparatus 300, to be contained therein during processing. The frame 402 may be formed from a material such as stainless steel . The frame 402 may be subjected to high temperatures during processing, such as above about 1000° C, and interior portions of the frame 402 may be lined with a liner 404 comprising a thermally stable material, such as opaque quartz. The liner 404 may be coupled to the frame 402 and may act as a heat shield to prevent excessive heating of the frame 402. Although shown as being coupled to a bottom portion of the frame 402, the liner 404 may be coupled to any portion of the frame which may be subjected to high temperatures.

[0040] A track receiving member 406 may be coupled to the frame 402 and may be adapted to receive a translative member, such as the track 302 of the carrier apparatus 300 (See Figure 3). Similar to the liner 404, the track receiving member 406 may comprise a thermally stable material, such as opaque quartz. One or more exhaust ports 408 may be disposed through the track receiving member 406 and may be adapted to exhaust process gases from the process module 400. Additionally, the exhaust ports 408 may be coupled to a pump. The exhaust ports 408 may be operatively coupled to the holes disposed through the base member 218 (See description relating to Figure 2) and may exhaust process gases which may be present in the process volume of the carrier apparatus 200 (See Figure 2).

[0041] The process module 400 may further comprise a gas manifold 410, such as a gas injection plate, to provide process gases to the process module 400. The gas manifold 410 may be coupled to a gas source (not shown) which may provide process gases, such as trichlorosilane or the like to the process module 400. The gas manifold 410 may comprise an inert material, such as stainless steel, that is resistant to processing gases.

[0042] Figure 4B is a perspective view of the process module of Figure 4A having the carrier apparatus of Figure 3 disposed therein. In operation, the carrier apparatus 300 may move linearly along the track 302 such that the carrier apparatus 300 may be disposed within the process module 400. The track 302 may move with the carrier apparatus 300 or the carrier apparatus 300 may move relative to the track 302 which may be stationary. Although not depicted, the process module 400, or a chamber within which the process module 400 may be disposed, may additionally comprise an electromagnetic radiation source, such as one or more heat lamps. In operation, the electromagnetic radiation source may heat the carrier apparatus 300 to a desired temperature for processing substrates disposed within the carrier apparatus 300. The processing temperature, such as about 600° C to about 1200° C, may influence the deposition of material on substrates such that deposition of silicon on the substrates may proceed under a mass transport regime as previously described.

[0043] Figure 5 is a schematic view of a linear processing apparatus 500.

The apparatus 500 may be adapted for linear processing of kerfless substrates. Although shown as having ten modules, the apparatus may have varying numbers of modules adapted to perform various processes to achieve desired processing results. The apparatus 500 may be utilized in processing kerfless silicon substrates. The apparatus 500 may comprise one or more process modules, such as process module 400 (See Figure 4), or chambers aligned in a linear manner through which a substrate carrier, such as carrier apparatus 200 or carrier apparatus 300 (See Figure 2 and Figure 3, respectively), may travel.

[0044] The apparatus 500 may comprise various types of process modules adapted to perform various processes. A first module 502 may comprise an entrance load lock chamber which may receive a carrier apparatus having unprocessed substrates disposed therein. The first module 502 may be coupled to a second module 504 within which a purge process may be performed. A nitrogen purge may be performed in the second module 504 to prepare the substrates for processing.

[0045] A third module 506 may be coupled to the second module 504 and may be adapted to perform purging and preheating processes. A hydrogen purge may be performed and the third module 506 may be preheated to a temperature of between about 650° C and about 1050° C, such as about 850° C. A fourth module 508 may be coupled to the third module 506 and may be adapted to perform a subsequent purge and heating process. A hydrogen purge may be performed and a temperature of the fourth module 508 may be elevated to a temperature between about 1000° C and about 1400° C, such as between about 1 150° C and about 1200° C.

[0046] A fifth module 510 may be coupled to the fourth module 508, a sixth module 512 may be coupled to the fifth module 510, a seventh module 514 may be coupled to the sixth module 512, and an eighth module 516 may be coupled to the seventh module 514. Modules 510, 512, 514, and 516 may comprise CVD chambers. Although shown as having four CVD modules, more or less modules adapted for CVD processing may be provided.

Modules 510, 512, 514, and 516 may perform a CVD process and may deposit various materials, such as silicon containing material and various dopant materials. In one example, silicon may be deposited epitaxially and various n or p type dopants may be deposited.

[0047] A ninth module 518 may be coupled to the eighth module 516 and may be adapted to perform a purge process and cooling process. For example, the ninth module 518 may perform a hydrogen purge process and a cooling process to lower the temperature of the substrates having been previously processed in the CVD modules 510, 512, 514, and 516 to a temperature of between about 650° C and about 1050° C, such as about 850° C. A tenth module 510 may be coupled to the ninth module 518 and may be adapted to perform a purge process and cooling process. The purge process may provide a nitrogen purge and the cooling process may return a carrier apparatus and the substrates disposed therein to a temperature at which they may be handled. A load lock chamber (not shown) may be coupled to the tenth module 520 and additional carrier apparatus preparation modules (not shown) may be adapted to transfer carrier apparatuses from the tenth module 520 to the first module 502.

[0048] Figure 6 is a plan view of a substrate carrier 600. The substrate carrier 600 may comprise a body 602 and may have a plurality of recesses 601 formed therein. The body 602 may comprise a thermally stable material, such as a graphite material, which may be coated with silicon carbide. The silicon carbide coating may be between about 60 μιτι and about 120 μιτι and may be deposited on the body 602 by a CVD or similar process. The substrate carrier 600 may be adapted to transfer a batch of substrates or templates through a processing apparatus, such as processing apparatus 500 (See Figure 5).

[0049] The plurality of recesses 601 may be arranged in various formations. For example, a first row of recesses 604, a second row of recesses 606, a third row of recesses 608, and a fourth row of recesses 610 may be arranged in a grid pattern. Each of the rows 604, 606, 608, 610 may comprise four recesses such that the plurality of recesses 601 may be aligned in rows and columns. Although shown as being substantially square in shape, each of the plurality of recesses may be adapted to carry substrates having various shapes, such as circular substrates. If the recesses are circular, they may be staggered to increase the recess density on the carrier 600. It is contemplated that different configurations of the plurality of recesses 601 , such as a 2x2 grid, 3x3 grid, 4x4 grid, 5x5 grid and so on, may be formed in the body 602. In an illustrative example, the substrate carrier 600 may be the first carrier 202 and/or the second carrier 204 of the carrier apparatus 200 (See Figure 2).

[0050] Each of the recesses in the plurality of recesses 601 has a depth selected to carry substrates having a particular thickness or range of thicknesses. For example, each of the recesses in the first row of recesses 604 may have a first depth of between about 900 μιτι and about 1 100 μιτι, such as about 1000 μιτι. Each of the recesses in the second row of recesses 606 may have a second depth of between about 650 μιτι and about 900 μιτι, such as about 750 μιτι. Each of the recesses in the third row of recesses 608 may have a third depth of between about 400 μιτι and about 650 μιτι, such as about 500 μιτι. Each of the recesses in the fourth row of recesses 610 may have a fourth depth of between about 200 μιτι and about 400 μιτι, such as about 300 μιτι.

[0051] Substrates carried by the substrate carrier 600 may be carried in one of the plurality of recesses 601 which may accommodate a thickness of the substrate. For example, a 1000 μιτι substrate may be carried by a recess in the first row of recesses 604, a 750 μιτι substrate may be carrier in the second row of recesses 606, a 500 μιτι substrate may be carried in the third row of recesses 608, and a 300 μιτι substrate may be carried in the fourth row of recesses 610. As described above, other configurations of the plurality of recesses 601 may be formed in the body 602 and the depth of the plurality of recesses 601 may be adjusted accordingly to accommodate substrates of various thicknesses. Surfaces of the substrates being processes may be substantially co-planar. [0052] It is contemplated that the carrier apparatuses described in Figure 7 through Figure 1 1 may be the carrier apparatuses of Figure 2 and Figure 3 and may be adapted accordingly for fabricating a carrier apparatus.

[0053] Figures 7A-7D are cross-sectional views of a carrier apparatus. Figure 7A depicts a first carrier apparatus 700 which may comprise a first carrier 702 and a second carrier 704. The first carrier 702 and second carrier 704 may be positioned to oppose each other at an angle of between about 3° and about 6°. The first carrier 702 and the second carrier 704 may be formed from a thermally stable material suitable to withstand processing temperatures, such as silicon carbide coated graphite. The first carrier 702 and the second carrier 704 may define a processing volume 750 having an opening 701 and an exit region 703. In operation, process gases may enter the processing volume 750 through the opening 701 and exit through the exit region 703. Material may be deposited on substrates carried by the first carrier 702 and the second carrier 704 under a mass flow regime. The processing volume 750 may gradually volumetrically decrease from the opening 701 to the exit region 703 to account for a reduction in reactive species in the process gases as the gas travels from the opening 701 to the exit region 703.

[0054] One or more first recesses 706 may be formed in the first carrier 702. The first recesses 706 may be defined by a first base region 712 and one or more first sidewalls 714. One or more second recesses 708 may be formed in the second carrier 704. The second recesses 708 may also be defined by the first base region 712 and the one or more first sidewalls 714. Both the first carrier 702 and the second carrier 704 may comprise first end regions 71 1 , 709 and first dividers 705, 707 which may define the one or more first sidewalls 714 and may extend from their respective carriers 702, 704 toward the process volume 750. For example, the first end region 71 1 and the first divider 705 of the first carrier 702 may extend from the first base region 712 to form a first recess 706. The first dividers 705 and 707 may extend from the first base region 712 to form another first recess 706. The first divider 707 and the first end region 709 may extend from the first base region 712 to form yet another first recess 706. The second recesses 708 of the second carrier 704 may be defined in a similar manner.

[0055] A surface 710 of the first end regions 71 1 , 709 and the first dividers 705, 707 of the first carrier 702 may occupy a first plane adjacent the processing volume 750. The surface 710 of the first end regions 71 1 , 709 and the first dividers 705, 707 of the second carrier 704 may occupy a second plane adjacent the processing volume 750. A distance between the surface 710 of the first end region 71 1 of the first carrier 702 and the surface 710 of the first end region 71 1 of the second carrier 704 may substantially define the opening 701 . A distance between the surface 710 of the first end region 709 of the first carrier 702 and the surface 710 of the first end region 709 of the second carrier 704 may substantially define the exit region 703.

[0056] A depth Di of the first recesses 706 may be defined between the first base region 712 and the surface 710. Similarly, the depth Di of the second recesses 708 may be defined between the first base region 712 and the surface 710. The depth Di of the first recesses 706 and the second recesses 708 may be between about 900 μιτι and about 1 100 μιτι, such as about 1000 μιτι. As such, the first carrier 702 and the second carrier 704 may be adapted for processing substrates having a thickness of about 1000 μιτι. Thus, a surface of a substrate being processed may be substantially co- planar with the surface 710 which may provide for improved gas flow dynamics during a deposition process. The substrate surfaces and the surfaces 710 may define a plane that forms the decreasing processing volume 750 space which may counteract the consumption of reactive species and improve the boundary layer dynamics.

[0057] Figure 7B depicts a second carrier apparatus 720 which may comprise a third carrier 722 and a fourth carrier 724. The third carrier 722 and fourth carrier 724 may be positioned to oppose each other at an angle of between about 3° and about 6°. The third carrier 722 and the fourth carrier

724 may be formed from a thermally stable material suitable to withstand processing temperatures, such as silicon carbide coated graphite. The third carrier 722 and the fourth carrier 724 may define the processing volume 750 having the opening 701 and the exit region 703. In operation, process gases may enter the processing volume 750 through the opening 701 and exit through the exit region 703. Material may be deposited on substrates carried by the third carrier 722 and the fourth carrier 724 under a mass flow regime. The processing volume 750 may gradually volumetrically decrease from the opening 701 to the exit region 703 to account for a reduction in reactive species in the process gases as the gas travels from the opening 701 to the exit region 703.

[0058] One or more third recesses 726 may be formed in the third carrier 722. The third recesses 726 may be defined by a second base region 732 and one or more second sidewalls 734. One or more fourth recesses 728 may be formed in the fourth carrier 724. The fourth recesses 728 may also be defined by the second base region 732 and the one or more second sidewalls 734. Both the third carrier 722 and the fourth carrier 724 may comprise second end regions 723, 729 and second dividers 725, 727 which may define the one or more second sidewalls 734 and may extend from their respective carriers 722, 724 toward the process volume 750. For example, the second end region 723 and the second divider 725 of the third carrier 722 may extend from the second base region 732 to form a third recess 726. The second dividers 725 and 727 may extend from the second base region 732 to form another third recess 726. The second divider 727 and the second end region 729 may extend from the second base region 732 to form yet another third recess 726. The fourth recesses 728 of the fourth carrier 724 may be defined in a similar manner, the description of which will be omitted for the sake of brevity.

[0059] A surface 710 of the second end regions 723, 729 and the second dividers 725, 727 of the third carrier 722 may occupy the first plane disposed adjacent the processing volume 750. The surface 710 of the second end regions 723, 729 and the second dividers 725, 727 of the fourth carrier 724 may occupy the second plane disposed adjacent the processing volume 750. A distance between the surface 710 of the second end region 723 of the third carrier 722 and the surface 710 of the second end region 723 of the fourth carrier 724 may substantially define the opening 701 . A distance between the surface 710 of the second end region 729 of the third carrier 722 and the surface 710 of the second end region 729 of the fourth carrier 724 may substantially define the exit region 703.

[0060] A depth D₂ of the third recesses 726 may be defined between the second base region 732 and the surface 710. Similarly, the depth D₂ of the fourth recesses 728 may be defined between the second base region 732 and the surface 710. The depth D₂ of the third recesses 726 and the fourth recesses 728 may be between about 650 μιτι and about 900 μιτι, such as about 750 μιτι. As such, the third carrier 722 and the fourth carrier 724 may be adapted for processing substrates having a thickness of about 750 μιτι. Thus, a surface of a substrate being processed may be substantially co- planar with the surface 710 which may provide for improved gas flow dynamics during a deposition process.

[0061] Figure 7C depicts a third carrier apparatus 740 which may comprise a fifth carrier 742 and a sixth carrier 744. The fifth carrier 742 and sixth carrier 744 may be positioned to oppose each other at an angle of between about 3° and about 6°. The fifth carrier 742 and the sixth carrier 744 may be formed from a thermally stable material suitable to withstand processing temperatures, such as silicon carbide coated graphite. The fifth carrier 742 and the sixth carrier 744 may define the processing volume 750 having the opening 701 and the exit region 703. In operation, process gases may enter the processing volume 750 through the opening 701 and exit through the exit region 703. Material may be deposited on substrates carried by the fifth carrier 742 and the sixth carrier 744 under a mass flow regime. The processing volume 750 may gradually volumetrically decrease from the opening 701 to the exit region 703 to account for a reduction in reactive species in the process gases as the gas travels from the opening 701 to the exit region 703.

[0062] One or more fifth recesses 746 may be formed in the fifth carrier

742. The fifth recesses 746 may be defined by a third base region 752 and one or more third sidewalls 754. One or more sixth recesses 748 may be formed in the sixth carrier 744. The sixth recesses 748 may also be defined by the third base region 752 and the one or more third sidewalls 754. Both the fifth carrier 742 and the sixth carrier 744 may comprise third end regions

743, 749 and third dividers 745, 747 which may define the one or more third sidewalls 754 and may extend from their respective carriers 742, 744 toward the process volume 750. For example, the third end region 743 and the third divider 745 of the fifth carrier 742 may extend from the third base region 752 to form a fifth recess 746. The third dividers 745 and 747 may extend from the third base region 752 to form another fifth recess 746. The third divider 747 and the third end region 749 may extend from the third base region 752 to form yet another fifth recess 746. The sixth recesses 748 of the sixth carrier 744 may be defined in a similar manner, the description of which will be omitted for the sake of brevity.

[0063] A surface 710 of the third end regions 743, 749 and the third dividers 745, 747 of the fifth carrier 742 may occupy the first plane disposed adjacent the processing volume 750. The surface 710 of the third end regions 743, 749 and the third dividers 745, 747 of the sixth carrier 744 may occupy the second plane disposed adjacent the processing volume 750. A distance between the surface 710 of the third end region 743 of the fifth carrier 742 and the surface 710 of the third end region 743 of the sixth carrier 744 may substantially define the opening 701 . A distance between the surface 710 of the third end region 749 of the fifth carrier 742 and the surface 710 of the third end region 749 of the sixth carrier 744 may substantially define the exit region 703.

[0064] A depth D₃ of the fifth recesses 746 may be defined between the third base region 752 and the surface 710. Similarly, the depth D₃ of the sixth recesses 748 may be defined between the third base region 752 and the surface 710. The depth D₃ of the fifth recesses 746 and the sixth recesses 748 may be between about 400 μιτι and about 650 μιτι, such as about 500 μιτι. As such, the fifth carrier 742 and the sixth carrier 744 may be adapted for processing substrates having a thickness of about 500 μιτι. Thus, a surface of a substrate being processed may be substantially co-planar with the surface 710 which may provide for improved gas flow dynamics during a deposition process.

[0065] Figure 7D depicts a fourth carrier apparatus 760 which may comprise a seventh carrier 762 and an eighth carrier 764. The seventh carrier 762 and eighth carrier 764 may be positioned to oppose each other at an angle of between about 3° and about 6°. The seventh carrier 762 and the eighth carrier 764 may be formed from a thermally stable material suitable to withstand processing temperatures, such as silicon carbide coated graphite. The seventh carrier 762 and the eighth carrier 764 may define the processing volume 750 having the opening 701 and the exit region 703. In operation, process gases may enter the processing volume 750 through the opening 701 and exit through the exit region 703. Material may be deposited on substrates carried by the seventh carrier 762 and the eighth carrier 764 under a mass flow regime. The processing volume 750 may gradually volumetrically decrease from the opening 701 to the exit region 703 to account for a reduction in reactive species in the process gases as the gas travels from the opening 701 to the exit region 703.

[0066] One or more seventh recesses 766 may be formed in the seventh carrier 762. The seventh recesses 766 may be defined by a fourth base region 772 and one or more fourth sidewalls 774. One or more eighth recesses 768 may be formed in the eighth carrier 764. The eighth recesses 768 may also be defined by the fourth base region 772 and the one or more fourth sidewalls 774. Both the seventh carrier 762 and the eighth carrier 764 may comprise fourth end regions 763, 769 and fourth dividers 765, 767 which may define the one or more fourth sidewalls 774 and may extend from their respective carriers 762, 764 toward the process volume 750. For example, the fourth end region 763 and the fourth divider 765 of the seventh carrier 762 may extend from the fourth base region 772 to form a seventh recess 766. The fourth dividers 765 and 767 may extend from the fourth base region 772 to form another seventh recess 766. The fourth divider 767 and the fourth end region 769 may extend from the fourth base region 772 to form yet another seventh recess 766. The eighth recesses 768 of the eighth carrier 764 may be defined in a similar manner, the description of which will be omitted for the sake of brevity.

[0067] A surface 710 of the fourth end regions 763, 769 and the fourth dividers 765, 767 of the seventh carrier 762 may occupy the first plane disposed adjacent the processing volume 750. The surface 710 of the fourth end regions 763, 769 and the fourth dividers 765, 767 of the eighth carrier 764 may occupy the second plane disposed adjacent the processing volume 750. A distance between the surface 710 of the fourth end region 763 of the seventh carrier 762 and the surface 710 of the fourth end region 763 of the eighth carrier 764 may substantially define the opening 701 . A distance between the surface 710 of the fourth end region 769 of the seventh carrier 762 and the surface 710 of the fourth end region 769 of the eighth carrier 764 may substantially define the exit region 703.

[0068] A depth D of the seventh recesses 766 may be defined between the fourth base region 772 and the surface 710. Similarly, the depth D of the eighth recesses 768 may be defined between the fourth base region 772 and the surface 710. The depth D of the seventh recesses 766 and the eighth recesses 768 may be between about 200 μιτι and about 400 μιτι, such as about 300 μιτι. As such, the seventh carrier 762 and the eighth carrier 764 may be adapted for processing substrates having a thickness of about 300 μιτι. Thus, a surface of a substrate being processed may be substantially co- planar with the surface 710 which may provide for improved gas flow dynamics during a deposition process. [0069] The carrier apparatuses 700, 720, 740, 760 each comprising two respective carriers may be utilized in a processing apparatus, such as apparatus 500 (See Figure 5). Templates (or substrates) having varying thicknesses may be carried in one of the carrier apparatuses 700, 720, 740, 760 whose respective recesses comprise a depth which matches a thickness of the template to be processes. It is contemplated that the carrier apparatuses 700, 720, 740, 760 may be utilized together in a system which is adapted to process templates having different thicknesses. However, the carrier apparatuses 700, 720, 740, 760 may also be utilized by themselves to process templates which have a thickness which correlates to a depth of the recesses disposed within the carrier apparatuses 700, 720, 740, 760.

[0070] Although depicted in Figures 7A-7D as having four carrier apparatuses 700, 720, 740, 760, more or less carrier apparatuses may be utilized together for processing templates having varying thicknesses. For example, three carrier apparatuses may be utilized. In this example, a first carrier apparatus may have recesses having a depth of between about 800 μιτι and about 1 100 μιτι, a second carrier apparatus may have recesses having a depth between about 500 μιτι and about 800 μιτι, and a third carrier apparatus may have recesses having a depth of between about 200 μιτι and about 500 μιτι.

[0071] The carrier apparatuses 700, 720, 740, 760 are depicted as each having three rows of recesses. It is contemplated that more rows of recesses or fewer rows of recesses may be formed in the carrier apparatuses 700, 720, 740, 760. For example, a carrier having four rows, such as carrier 600 (See Figure 6) may be utilized as the carriers in a carrier apparatus. The two carriers of the carrier apparatuses 700, 720, 740, 760 may be substantially identical. The carrier apparatuses 700, 720, 740, 760 may be substantially symmetrical over a vertical line of symmetry extending through the opening 701 and the exit region 703. Also, templates places in the recesses of the carrier apparatuses 700, 720, 740, 760 may be retained in the recesses by a combination of forces, such as the angle at which the carrier apparatuses 700, 720, 740, 760 are positioned and by the force of gravity.

[0072] Figure 8 depicts a multiple depth carrier apparatus 800 which may comprise a first multiple depth carrier 802 and a second multiple depth carrier 804. The first multiple depth carrier 802 and second multiple depth carrier 804 may be positioned to oppose each other at an angle of between about 3° and about 6°. The first multiple depth carrier 802 and the second multiple depth carrier 804 may be formed from a thermally stable material suitable to withstand processing temperatures, such as silicon carbide coated graphite. The first multiple depth carrier 802 and the second multiple depth carrier 804 may define a processing volume 850 having an opening 801 and an exit region 803. In operation, process gases may enter the processing volume 850 through the opening 801 and exit through the exit region 803. Material may be deposited on substrates carried by the first multiple depth carrier 802 and the second multiple depth carrier 804 under a mass flow regime. The processing volume 850 may gradually volumetrically decrease from the opening 801 to the exit region 803 to account for a reduction in reactive species in the process gases as the gas travels from the opening 801 to the exit region 803.

[0073] One or more recesses 806, 808, 810 may be formed in the first multiple depth carrier 802 and the second multiple depth carrier 804. Although shown as having three rows of recesses 806, 808, 810, it is contemplated that more rows or less rows may be formed in the multiple depth carriers 802, 804. For the sake of brevity, the recesses 806, 808, 810 and other features of the first multiple depth carrier 802 and the second multiple depth carrier 804 will be described together where the features are substantially similar. Differences between the first multiple depth carrier 802 and the second multiple depth carrier 804 will be described when warranted. A shallow depth recess 806 may be formed in the multiple depth carriers 802, 804. The shallow depth recess 806 may be defined by a shallow bottom region 816 and one or more shallow sidewalls 814. The shallow sidewalls 814 may extend from a surface 812 into the carriers 802, 804 to the shallow bottom region 816. The shallow depth recess 806 may be formed between a shallow end region 805 and a first bi-depth divider 815. The first bi-depth divider 815 may comprise the shallow sidewall 814 adjacent the shallow depth recess 806.

[0074] An intermediate depth recess 808 may be formed in the multiple depth carriers 802, 804. The intermediate depth recess 808 may be defined by an intermediate bottom region 820 and one or more intermediate sidewalls 818. The intermediate sidewalls 818 may extend from the surface 812 into the carriers 802, 804 to the intermediate bottom region 820. The intermediate depth recess 808 may be formed between the first bi-depth divider 815 and a second bi-depth divider 825. The first bi-depth divider 815 may comprise the intermediate sidewall 818 adjacent the intermediate depth recess 808. The second bi-depth divider 825 may comprise the intermediate sidewall 818 adjacent the intermediate depth recess 808.

[0075] A deep depth recess 810 may be formed in the multiple depth carriers 802, 804. The deep depth recess 810 may be defined by a deep bottom region 824 and one or more deep sidewalls 822. The deep sidewalls 822 may extend from the surface 812 into the carriers 802, 804 to the deep bottom region 824. The deep depth recess 810 may be formed between the second bi-depth divider 825 and a deep end region 835. The second bi-depth divider 825 may comprise the deep sidewall 82 adjacent the deep depth recess 810. The deep end region 835 may comprise the deep sidewall 822 adjacent the deep depth recess 810.

[0076] The arrangement of the recesses 806, 808, 810 may be inverted.

For example, the carrier apparatus 800 may be flipped 180° around a horizontal axis such that the deep depth recesses 810 may be oriented near the opening 801 and the shallow depth recesses 806 may be oriented near the exit region 803. However, the first multiple depth carrier 802 and the second multiple depth carrier 804 may maintain the opening 801 as if the carrier apparatus 800 were not inverted. It is also contemplated that the carrier apparatus 800 may be rotated 180° around a vertical axis such that the second multiple depth carrier 804 may be oriented in the position of the first multiple depth carrier 802 as shown in Figure 8. In this example, the first multiple depth carrier 802 may be oriented in the position of the second multiple depth carrier 804. The ability to rotate the carrier apparatus around a vertical axis is a result of the symmetry displayed by the carrier apparatus 800.

[0077] The multiple depth carrier apparatus 800 is depicted as having recesses with three different depths. In one example, the shallow depth recess 806 may have a depth between about 800 μιτι and about 1 100 μιτι. The intermediate depth recess 808 may have a depth between about 500 μιτι and about 800 μιτι. The deep depth recess 810 may have a depth between about 200 μιτι and about 500 μιτι. The recesses 806, 808, 810 may be adapted to carry substrates having thicknesses within the range of depths indicated above.

[0078] Although shown as having three different depths of recesses, the carrier apparatus 800 may have more or less recesses of different depths. In another example, the carrier apparatus 800 may have recesses having four different depths. For example, referring back to Figure 6, the substrate carrier 600 having a first row of recesses 604, a second row of recesses 606, a third row of recesses 608, and a fourth row of recesses 610 may be the first multiple depth carrier 802 and the second multiple depth carrier 804. In this example, the first row of recesses 604 may have a first depth of between about 900 μιτι and about 1 100 μιτι, such as about 1000 μιτι. The second row of recesses 606 may have a second depth of between about 650 μιτι and about 900 μιτι, such as about 750 μιτι. The third row of recesses 608 may have a third depth of between about 400 μιτι and about 650 μιτι, such as about 500 μιτι. The fourth row of recesses 610 may have a fourth depth of between about 200 μιτι and about 400 μιτι, such as about 300 μιτι.

[0079] Figure 9 depicts a constant depth carrier apparatus 900 which may comprise a first constant depth carrier 902 and a second constant depth carrier 904. The term constant depth as utilized herein may refer to the ability to process a substrate having a thickness which may range from about 150 μιτι to about 1 100 μιτι. The constant depth carrier apparatus 900 may be substantially similar to the carrier apparatus 700 (See Figure 7A). One or more depth selection members 912, 914 may be disposed within one or more of the recesses 906, 908, 910 to modify the depth of the recesses 906, 908, 910.

[0080] A first constant depth recess 906 may be formed within both the first constant depth carrier 902 and the second constant depth carrier 904. The first constant depth recess 906 may have a depth of between about 900 μιτι and about 1 100 μιτι, such as about 1000 μιτι. A first depth selection member 912 may be disposed within the first constant depth recess 906. The first depth selection member 912 may be a shim and may be fabricated from a chemically inert and thermally stable material, such as silicon carbide, or silicon carbide coated graphite. The first depth selection member 912 may be sintered or hollow and may be sized to fit within the first constant depth recess 906. The first depth selection member 912 may have a thickness of about 700 μιτι. The modified depth of the first constant depth recess 906 having the first depth selection member 912 disposed therein may be about 300 μιτι and may be adapted for processing substrates having a thickness of less than about 300 μιτι. A substrate may be placed in the first constant depth recess 906 in contact with a first depth selection member surface 91 1 . As such, a surface of a substrate being processes may be substantially co-planar with a surface 916 of the first constant depth carrier 902 and the second constant depth carrier 904.

[0081] A second constant depth recess 908 may be formed within both the first constant depth carrier 902 and the second constant depth carrier 904. The second constant depth recess 908 may have a depth of between about 900 μιτι and about 1 100 μιτι, such as about 1000 μιτι. A second depth selection member 914 may be disposed within the second constant depth recess 908. The second depth selection member 914, or shim, may be fabricated from a chemically inert and thermally stable material, such as silicon carbide, or silicon carbide coated graphite. The second depth selection member 914 my sintered or hollow and may be sized fit within the second constant depth recess 908. The second depth selection member 914 may have a thickness of about 250 μιτι. The modified depth of the second constant depth recess 908 having the second depth selection member 914 disposed therein may be about 750 μιτι and may be adapted for processing substrates having a thickness between about 300 μιτι and about 750 μιτι. A substrate may be placed in the second constant depth recess 908 in contact with a second depth selection member surface 913. As such, a surface of a substrate being processes may be substantially co-planar with the surface 916 of the first constant depth carrier 902 and the second constant depth carrier 904.

[0082] A third constant depth recess 910 may be substantially unmodified by a depth selection member. The constant depth base region 918 may formed within the first constant depth carrier 902 and the second constant depth carrier 904 and may have a depth of between about 900 μιτι and about 1 100 μιτι, such as about 1000 μιτι. As such, substrates having varying thicknesses may be selected to be disposed in an appropriate recess for processing. The depth selection members 912, 914 allow a constant depth carrier apparatus 900 to process substrates having varying sizes at the same time by standardizing the relationship between the surface of the substrate and the surface 916 of the carrier apparatus 900. Depth selection members may be used to convert a multiple depth carrier to a constant depth carrier, or vice versa. It is also contemplated that more than one depth selection member may be disposed in a recess to change the depth of the recesses, if desired.

[0083] Figure 10 depicts a beveled edge carrier apparatus 1000 which may comprise a first beveled edge carrier 1002 and a second beveled edge carrier 1004. The first beveled edge carrier 1002 and second beveled edge carrier 1004 may be positioned to oppose each other at an angle of between about 3° and about 6°. The first beveled edge carrier 1002 and the second beveled edge carrier 1004 may be formed from a thermally stable material suitable to withstand processing temperatures, such as silicon carbide coated graphite. The first beveled edge carrier 1002 and the second beveled edge carrier 1004 may define a processing volume 1050 having an opening 1001 and an exit region 1003. In operation, process gases may enter the processing volume 1050 through the opening 1001 and exit through the exit region 1003. Material may be deposited on substrates carried by the first beveled edge carrier 1002 and the second beveled edge carrier 1004 under a mass flow regime. The processing volume 1050 may gradually volumetrically decrease from the opening 1001 to the exit region 1003 to account for a reduction in reactive species in the process gases as the gas travels from the opening 1001 to the exit region 1003.

[0084] The beveled edge carrier apparatus 1000 may be substantially similar to any one of carrier apparatuses 700, 720, 740, and 760 (See Figures 7A-7D) when considering the depths of the beveled edge recesses 1006, 1008, 1010. However, the geometry of the end regions 1015, 1025 and the dividers 1005, 1007 may be different. The end region 1015 may extend from the beveled edge carriers 1002, 1004 toward the processing volume 1050 and may define the opening 1001 . A sidewall 1024 may extend from a recess base region 1022 and a first end region beveled edge 1018 may be formed between the sidewall 1024 and the surface 1012. The first end region beveled edge 1018 may define a portion of a first beveled edge recess 1006. Similarly, with respect to the end region 1025 extending from the beveled edge carriers 1002, 1004, the end region 1025 may extend toward the processing volume 1050 but may define the exit region 1003. The sidewall 1024 may extend from the recess base region 1022 and a second end region beveled edge 1020 may be formed between the sidewall 1024 and the surface 1012. The second end region beveled edge 1020 may define a portion of a third beveled edge recess 1010. [0085] The dividers 1005, 1007 of the first beveled edge carrier 1002 and the second beveled edge carrier 1004 may also comprise one or more beveled edges 1014, 1016. A first beveled edge divider 1005, in combination with the end region 1015, may define the first beveled edge recess 1006. The first beveled edge divider 1005 may extend from the recess base region 1022 toward the processing volume 1050. A first beveled edge 1014 may be formed between the sidewall 1024 and the surface 1012 and may face upward toward the opening 1001 . A second beveled edge 1016 may be formed between the sidewall 1024 and the surface 1012 and may face downward toward the exit region 1003. A second beveled edge recess 1008 may be defined by the first beveled edge divider 1005 and a second beveled edge divider 1007. The second beveled edge divider 1007 may be substantially similar to the first beveled edge divider 1005.

[0086] The beveled edges 1014, 1016, 1018, 1020 may all be oriented at an angle with regard to the sidewalls 1024 and the surface 1012. For example, the beveled edges 1014, 1016, 1018, 1020 may be substantially non-perpendicular to either the sidewalls 1024 or the surface 1012. The beveled edges 1014, 1016, 1018, 1020 may reduce the turbulence of gas flow within the processing volume 1050 by reducing the contact profile at which the processing gases may contact a substrate disposed within the beveled edge recesses 1006, 1008, 1010. As such, a surface of a substrate being processed may be further standardized to the surface 1012 of the beveled edge carriers 1002, 1004. Gas flow dynamics in the mass flow transport system may be improved which may result in improved film deposition uniformity. The beveled edges 1014, 1016, 1018, 1020 may also reduce the tolerances associated with placing a substrate in the beveled edge recesses 1006, 1008, 1010. Thus, excess width around the substrate may be reduced with may improve gas flow dynamics.

[0087] Figure 1 1 depicts a substantially volumetrically constant carrier apparatus 1 100 which may be substantially similar to any of the carrier apparatuses 700, 720, 740, 760 (See Figures 7A-7D). The volumetrically constant carrier apparatus 1 100 may also incorporate elements such as multiple depth recesses (See figure 8), depth selection members (See Figure 9), and beveled edges (See Figure 10). Elements of the substantially constant carrier apparatus 1 100 similar to elements described with regard to Figure 7 through figure 10 will not be described for the sake of brevity. The carrier apparatus 1 100 may comprise a first vertically oriented carrier 1 102 and a second vertically oriented carrier 1004. The first vertically oriented carrier 1 102 and second vertically oriented carrier 1 104 may be positioned to oppose each other at an angle of approximately 0° such that first vertically oriented carrier 1 102 and second vertically oriented carrier 1 104 are substantially aligned along the same vertical plane.

[0088] An opening 1 101 may be defined between a first end region 1 105 of the carriers 1 102, 1 104 and a distance A between surfaces 1 12 of the carriers 1 102, 1 104 may define a width of the opening 1 101 . An exit region 1 103 may be defined between a second end region 1 1 1 1 of the carriers 1 102, 1 104 and a distance B between the surfaces 1 12 of the carriers 1 102, 1 104 may define a width of the exit region 1 103. A substantially volumetrically constant processing volume 1050 may be defined between the carriers 1 102, 1 104. The distance A and the distance B may be substantially equal. Recesses 1 106, 1 108, 1 1 10, may be adapted to accommodate and carry a substrate during processing. The substrates may be held in the recesses 1 106, 1 108, 1 1 10 by an electrostatic force. As such, an electrostatic charge may be applied to maintain the substrates within the carrier apparatus 1 100.

[0089] In light of the aforementioned embodiments, kerfless substrate batch processing of templates (substrates) having varying thicknesses may be realized. The apparatuses described above may generally be utilized in an inline CVD apparatus and the apparatuses may process templates of varying thicknesses at the same time. The apparatuses may be used alone or in various combinations to achieve improved film deposition uniformity on templates having varying thicknesses which are processed at the same time. The novel apparatuses described herein improve throughput and may ultimately reduce the cost associated with substrate processing.

[0090] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

Claims:

1 . An apparatus for processing substrates, comprising:

a first carrier having a first plurality of recesses formed therein;

a second carrier having a second plurality of recesses formed therein positioned opposite the first carrier; and

one or more sidewalls coupling the first carrier and the second carrier, wherein the first and second carriers form a V-shaped processing volume comprising an opening and a vertex, wherein the first plurality of recesses and the second plurality of recesses are positioned to oppose one another.

2. The apparatus of claim 1 , wherein the first carrier and second carrier are coupled at an exit of the V-shaped processing volume by a base member.

3. The apparatus of claim 2, wherein an angle between the first carrier and second carrier is between about 3° and about 6°.

4. The apparatus of claim 1 , wherein a depth of each recess in the first plurality of recesses and the second plurality of recesses is selected to conform to a thickness of a substrate disposed therein.

5. The apparatus of claim 4, wherein the depth of the first plurality of recesses and the second plurality of recesses increases in each row of recesses from the opening to the vertex.

6. The apparatus of claim 4, wherein the depth of the first plurality of recesses and the second plurality of recesses decreases in each row of recesses from the opening to the vertex.

7. The apparatus of claim 1 , wherein a depth selection member is disposed in the first plurality of recesses and the second plurality of recesses, the depth selection member having a thickness selected for a thickness of a substrate disposed in the first plurality of recesses and the second plurality of recesses.

8. The apparatus of claim 1 , wherein a sidewall of each recess in the first plurality of recesses and the second plurality of recesses is tapered.

9. An apparatus for processing substrates, comprising:

a first carrier and a second carrier having a plurality of recesses formed therein, the plurality of recesses having a first depth formed therein;

one or more sidewalls coupling the first carrier and the second carrier, wherein the first and second carriers form a V-shaped processing volume comprising an opening and a vertex, wherein the plurality of recesses of the first carrier and the plurality of recesses of the second carrier are positioned to oppose one another.

10. The apparatus of claim 9, wherein the first depth is between about 800 μιτι and about 1 100 μιτι.

1 1 . The apparatus of claim 10, further comprising a third carrier and a fourth carrier having a second plurality of recesses, wherein a depth of the second plurality of recesses is between about 500 μιτι and about 800 μιτι.

12. The apparatus of claim 1 1 , further comprising a fifth carrier and a sixth carrier having a third plurality of recesses, wherein a depth of the third plurality of recesses is between about 300 μιτι and about 500 μιτι.

13. An apparatus for processing substrates, comprising:

a first carrier having a first plurality of recesses formed therein;

a second carrier disposed parallel to the first carrier and having a second plurality of recesses formed therein, wherein the second plurality of recesses are positioned to oppose the first plurality of recesses;

one or more sidewalls coupling the first carrier and the second carrier; and a substantially volumetrically constant processing cavity formed between the first carrier, second carrier, and the one or more sidewalls.

14. The apparatus of claim 13, wherein a depth of the first plurality of recesses and the second plurality of recesses is selected to conform to a thickness of a substrate disposed therein.

15. The apparatus of claim 13, wherein a depth selection member is disposed in the first plurality of recesses and the second plurality of recesses, the depth selection member having a thickness correlating to a thickness of a substrate disposed in the first plurality of recesses and the second plurality of recesses.