WO2015094596A1

WO2015094596A1 - Semiconductor system assemblies and methods of operation

Info

Publication number: WO2015094596A1
Application number: PCT/US2014/067135
Authority: WO
Inventors: Andrew Nguyen; Kartik Ramaswamy; Srinivas Nemani; Bradley Howard; Yogananda Sarode Vishwanath
Original assignee: Applied Materials, Inc.
Priority date: 2013-12-17
Filing date: 2014-11-24
Publication date: 2015-06-25
Also published as: TW201527587A

Abstract

An exemplary semiconductor processing system may include a high-frequency electrical source that has an outlet plug. The system may include a processing chamber having a top plate, and an inlet assembly coupled with the top plate. The inlet assembly may include an electrode defining an aperture at a first end and configured to receive the outlet plug. The aperture may be characterized at the first end by a first diameter, and a second end of the aperture opposite the first end may be characterized by a second diameter less than the first diameter. The inlet assembly may further include an inlet insulator coupled with the top plate and configured to electrically insulate the top plate from the electrode.

Description

SEMICONDUCTOR SYSTEM ASSEMBLIES AND METHODS OF

OPERATION

CROSS-REFERENCES TO RELATED APPLICATIONS

[0001] This Application claims priority to each of U.S. Application No. 14/108,683 (Attorney Docket No. A21302-03/K890135) entitled "SEMICONDUCTOR SYSTEM ASSEMBLIES AND METHODS OF OPERATION," U.S. Application No. 14/108,692 (Attorney Docket No. A21302- 02/K894190) entitled "SEMICONDUCTOR SYSTEM ASSEMBLIES AND METHODS OF OPERATION," and U.S. Application No. 14/108,719 (Attorney Docket No. A21302/K894191) entitled "SEMICONDUCTOR SYSTEM ASSEMBLIES AND METHODS OF OPERATION," all of which were filed concurrently on December 17, 2013, the entire disclosures of which are hereby incorporated by reference for all purposes.

TECHNICAL FIELD

[0002] The present technology relates to semiconductor systems, processes, and equipment. More specifically, the present technology relates to systems and methods for reducing film contamination and equipment degradation.

BACKGROUND

[0003] Integrated circuits are made possible by processes which produce intricately patterned material layers on substrate surfaces. Producing patterned material on a substrate requires controlled methods for removal of exposed material. Chemical etching is used for a variety of purposes including transferring a pattern in photoresist into underlying layers, thinning layers, or thinning lateral dimensions of features already present on the surface. Often it is desirable to have an etch process that etches one material faster than another facilitating, for example, a pattern transfer process. Such an etch process is said to be selective to the first material. As a result of the diversity of materials, circuits, and processes, etch processes have been developed with a selectivity towards a variety of materials.

[0004] Etch processes may be termed wet or dry based on the materials used in the process. A wet HF etch preferentially removes silicon oxide over other dielectrics and materials. However, wet processes may have difficulty penetrating some constrained trenches and also may sometimes deform the remaining material. Dry etches produced in local plasmas formed within the substrate processing region can penetrate more constrained trenches and exhibit less deformation of delicate remaining structures. However, local plasmas may damage the substrate through the production of electric arcs as they discharge. [0005] Thus, there is a need for improved systems and methods that can be used to produce high quality devices and structures. These and other needs are addressed by the present technology.

SUMMARY

[0006] Systems, chambers, and processes are provided for controlling chamber degradation due to high voltage plasma. The systems may provide configurations for components that allow improved plasma profiles to be delivered. The chambers may include modified components less likely to degrade due to exposure to plasma. The methods may provide for the limiting or prevention of chamber or component degradation as a result of etching processes performed by system tools.

[0007] Exemplary semiconductor processing systems may include a high-frequency electrical source including an outlet plug as well as a processing chamber having a top plate. The processing systems may further include an inlet assembly coupled with the top plate and including an electrode defining an aperture at a first end. The electrode may be configured to receive the outlet plug, and the aperture may be characterized at the first end by a first diameter, and a second end of the aperture opposite the first end may be characterized by a second diameter less than the first diameter. The semiconductor processing systems may further include an inlet insulator coupled with the top plate and configured to electrically insulate the top plate from the electrode.

[0008] Exemplary inlet insulators may define an insulator opening, and the semiconductor processing system may further include a nozzle positioned at least partially within the insulator opening. In embodiments, the nozzle may define a channel extending through the nozzle. The semiconductor processing systems may further include an ignition rod having a first surface. The ignition rod may be positioned between the electrode and the nozzle, and at least a portion of the ignition rod may extend into the channel defined by the nozzle. The ignition rod may define an ignition opening extending into the first surface, and may further define a ledge within the ignition opening. In embodiments, the electrode may be located at least partially within the ignition opening and seated on the ledge.

[0009] The semiconductor processing systems may further include an RF insulator coupled with the first surface of the ignition rod. At least a portion of the electrode may extend above the RF insulator in disclosed embodiments. Exemplary processing systems may further include a showerhead, and in disclosed embodiments at least a portion of the showerhead may be silicon. In disclosed embodiments at least a portion of the showerhead may be coated with a treatment material, and the treatment material may be selected from the group consisting of silicon and a ceramic. The high-frequency electrical source utilized in the semiconductor processing systems may be configured to operate at a frequency of at least about 13.56 MHz, and in disclosed embodiments may be configured to operate at a frequency of at least about 60 MHz.

[0010] Semiconductor processing systems are also described and may include a processing chamber having a top plate and a high-frequency electrical source. The systems may include an electrode positioned between the processing chamber and the high-frequency electrical source, and may also include an ignition rod at least partially housing the electrode. An RF insulator may be positioned between the ignition rod and the high-frequency electrical source, and the systems may also include a nozzle defining an aperture through which at least a portion of the ignition rod extends. The semiconductor processing systems may also include an inlet insulator housing the nozzle that may be coupled with the top plate to electrically insulate the top plate from the electrode. An RF shield may also be included that encompasses at least a portion of the ignition rod, the nozzle, and the inlet insulator. The semiconductor processing systems may further include a gas distribution baffle, and may also include a showerhead in disclosed embodiments.

[0011] Etching methods are also described that may include striking a plasma with a high- frequency electrical source. The plasma may be used in the methods to create a flux of nonreactive ions that may be delivered to a semiconductor processing chamber housing a substrate. The ions may be utilized to etch materials on a substrate in disclosed embodiments. Such methods may allow for reduced component bombardment within the semiconductor processing system which may reduce sputtering of system components. By reducing contamination from such sputtered particles, overall device quality may be improved along with reduced wear or degradation of system components.

[0012] Such technology may provide numerous benefits over conventional systems and techniques. For example, degradation of the electrode and other chamber components may be prevented or limited. An additional advantage is that improved etching profiles may be provided based on improved plasma control over a broader frequency range. These and other embodiments, along with many of their advantages and features, are described in more detail in conjunction with the below description and attached figures.

[0013] Exemplary semiconductor processing systems may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels f uidly coupled with an injection port. [0014] A first component of the mounting assembly may include an annular gas block, and a second component of the mounting assembly may include a mounting block defining a channel and comprising a first mounting surface and a second mounting surface opposite the first mounting surface. In disclosed embodiments, a first section of the channel extending from the first mounting surface may be characterized by a first diameter. A second section of the channel extending from the first section of the channel to the second mounting surface may be characterized by an increasing diameter from the first section of the channel to the second mounting surface. In embodiments, the gas block may be coupled with a first surface of the precursor distribution assembly, and the mounting block may be coupled with a second surface of the precursor distribution assembly opposite the first surface of the precursor distribution assembly.

[0015] In embodiments, the precursor distribution assembly may comprise an annular shape. The precursor distribution assembly may include at least two coupled plates, which at least partially define the plurality of distribution channels. A first plate of the at least two coupled plates may at least partially define a first distribution channel extending tangentially from a single injection port to at least two secondary distribution channels. The at least two secondary distribution channels may extend tangentially from the first distribution channel to at least two tertiary distribution apertures. A second plate of the at least two coupled plates may at least partially define a portion of the at least two tertiary distribution apertures. The second plate may further define at least two tertiary distribution channels extending from the at least two tertiary distribution apertures. The second plate may further define at least two quaternary distribution channels extending from the at least two tertiary distribution channels.

[0016] Exemplary semiconductor processing systems according to the present technology may include a remote plasma source, and a processing chamber having a top plate. The systems may also include an inlet assembly coupling the remote plasma source with the top plate. The inlet assembly may include a precursor distribution assembly defining the plurality of distribution channels fluidly coupled with a single injection port. The precursor distribution assembly may also include at least two annular plates coupled with each other and at least partially defining a central distribution channel. A first plate of the at least two annular plates may define a single injection port and a first distribution channel tangentially extending from the single injection port. The second plate of the at least two annular plates may define at least two secondary distribution channels in fluid communication with the first distribution channel and the central distribution channel. The inlet assembly may further include a mounting assembly, and the mounting assembly may include at least two components spatially separated by the precursor distribution assembly. The semiconductor processing systems may also include a support assembly coupled with the remote plasma source and including at least one support extension extending from the support assembly towards the top plate. The support extension may be separated from the top plate in a first operational position, and the support extension may be configured to contact the top plate in a second operational position engageable during a processing operation.

[0017] Etching methods may be performed utilizing any of the disclosed technology, and the methods may include generating a plasma with a remote plasma source to create plasma effluents of a first precursor. The methods may also include bypassing the remote plasma source with a second precursor flowed into a gas distribution assembly. The gas distribution assembly may be fluidly coupled with the remote plasma source, such as with a central distribution channel. The methods may include contacting the second precursor with the plasma effluents of the first precursor to produce an etching formula. The contacting of the precursors may occur externally to a processing chamber. The methods may also include etching materials on a substrate housed in the processing chamber with the etching formula.

[0018] Such technology may provide numerous benefits over conventional systems and techniques. For example, degradation of chamber components may be prevented or limited due to external plasma generation. An additional advantage is that improved etching profiles may be provided based on improved precursor delivery. These and other embodiments, along with many of their advantages and features, are described in more detail in conjunction with the below description and attached figures.

[0019] An exemplary semiconductor processing system may include a processing chamber and a first plasma source. The first plasma source may utilize a first electrode positioned externally to the processing chamber, and the first plasma source may be configured to generate a first plasma. The processing system may further comprise a second plasma source separate from the first plasma source that utilizes a second electrode separate from the first electrode. The second electrode may be positioned externally to the processing chamber, and the second plasma source may be configured to generate a second plasma within the processing chamber. The processing system may further include a showerhead disposed between the relative locations of the first plasma electrode and the second plasma electrode.

[0020] Exemplary processing systems may further include a second showerhead positioned fluidly downstream from the location at which the second plasma is configured to be generated, and the second showerhead may include a multi-channel showerhead in embodiments. An insulator may be positioned between the first showerhead and the second showerhead in disclosed embodiments. The second plasma source may include an inductively coupled plasma source, and in embodiments the inductively coupled plasma source may include at least two separate coils arranged about the processing chamber. In disclosed embodiments, the inductively coupled plasma source may include at least four separate coils arranged about the processing chamber, and the at least four separate coils may be displaced about the processing chamber from each other by about 90°. In embodiments the second showerhead may be positioned fluidly upstream from a location at which the inductively coupled plasma may be configured to be generated. In exemplary semiconductor processing systems, the first plasma source may be electrically coupled with a first RF source, and the second plasma source may be electrically coupled with a second RF source separate from the first RF source. In embodiments, the first RF source may be configured to operate at a first plasma frequency, and the second RF source may be configured to operate at a second plasma frequency greater than the first plasma frequency.

[0021] Semiconductor processing systems are also described that include a processing chamber having a top plate in a plasma generation device coupled with the top plate. In disclosed embodiments, the plasma generation device may include a plasma generation device housing, and a nozzle positioned within the plasma generation device housing. The nozzle may also include a fluid injection port, and the nozzle may be composed partially, substantially, or exclusively of an insulative material. The plasma generation device may also include a plasma electrode positioned within the plasma generation device housing and coupled externally with the nozzle. The plasma electrode may be coupled with a plasma source and be configured to generate a plasma within the nozzle. In disclosed embodiments, the plasma electrode may include at least two separate coils arranged about the nozzle.

[0022] Methods of etching are also described and may include striking a first plasma with a first plasma source operating as an inductively coupled plasma source. The methods may include creating a flux of nonreactive ions, and delivering the ions to a processing chamber in which a substrate is housed. The methods may also include etching materials on the substrate. The methods may further include striking a second plasma with a second plasma source separate from the first plasma source to create plasma effluents of a first precursor. The methods may also include bypassing the second plasma with a second precursor. The methods may include contacting the second precursor with the plasma effluents of the first precursor to produce an etching formula. The etching formula may be delivered through the processing chamber to the substrate and materials on the substrate may be etched with the etching formula.

[0023] Such technology may provide numerous benefits over conventional systems and techniques. For example, degradation of the electrode and other chamber components may be prevented or limited. An additional advantage is that improved etching profiles may be provided based on improved plasma control. These and other embodiments, along with many of their advantages and features, are described in more detail in conjunction with the below description and attached figures.

[0024] The present technology may also be summarized as follows with respect to various features discussed throughout the application:

[0025] A semiconductor processing system comprising a remote plasma source; a processing chamber having a top plate; and an inlet assembly coupling the remote plasma source with the top plate and comprising: a mounting assembly, and a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.

[0026] The semiconductor processing system of paragraph [0025], wherein the mounting assembly comprises at least two components.

[0027] The semiconductor processing system of paragraph [0026], wherein a first component of the mounting assembly comprises an annular gas block.

[0028] The semiconductor processing system of paragraph [0027], wherein a second component of the mounting assembly comprises a mounting block defining a channel and comprising a first mounting surface and a second mounting surface opposite the first mounting surface.

[0029] The semiconductor processing system of paragraph [0028], wherein a first section of the channel extending from the first mounting surface is characterized by a first diameter.

[0030] The semiconductor processing system of paragraph [0029], wherein a second section of the channel extending from the first section of the channel to the second mounting surface is characterized by an increasing diameter at least partially along the first section of the channel towards the second mounting surface.

[0031] The semiconductor processing system of paragraph [0028], wherein the gas block is coupled with a first surface of the precursor distribution assembly and the mounting block is coupled with a second surface of the precursor distribution assembly opposite the first surface of the precursor distribution assembly.

[0032] The semiconductor processing system of paragraph [0025], wherein the precursor distribution assembly comprises an annular shape. [0033] The semiconductor processing system of paragraph [0025], wherein the precursor distribution assembly comprises at least two coupled plates, which at least partially define the plurality of distribution channels.

[0034] The semiconductor processing system of paragraph [0033], wherein a first plate of the at least two coupled plates at least partially defines a first distribution channel extending tangentially from the single injection port to at least two secondary distribution channels.

[0035] The semiconductor processing system of paragraph [0034], wherein the at least two secondary distribution channels extend tangentially from the first distribution channel to at least two tertiary distribution apertures.

[0036] The semiconductor processing system of paragraph [0035], wherein a second plate of the at least two coupled plates at least partially defines a portion of the at least two tertiary distribution apertures, and wherein the second plate further defines at least two tertiary distribution channels extending from the at least two tertiary distribution apertures.

[0037] The semiconductor processing system of paragraph [0036], wherein the second plate further defines at least two quaternary distribution channels extending from the at least two tertiary distribution channels.

[0038] A semiconductor processing system comprising: a remote plasma source; a processing chamber having a top plate; an inlet assembly coupling the remote plasma source with the top plate and comprising: a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with a single injection port, wherein the precursor distribution assembly comprises at least two annular plates coupled with each other and at least partially defining a central distribution channel, wherein a first plate of the at least two annular plates defines the single injection port and a first distribution channel tangentially extending from the single injection port, and wherein a second plate of the at least two annular plates defines at least two secondary distribution channels in fluid communication with the first distribution channel and the central distribution channel, and a mounting assembly, wherein the mounting assembly comprises at least two components spatially separated by the precursor distribution assembly; and a support assembly coupled with the remote plasma source and including at least one support extension extending from the support assembly towards the top plate, wherein the at least one support extension is separated from the top plate in a first operational position, and wherein the at least one support extension is configured to contact the top plate in a second operational position engageable during a processing operation. [0039] An etching method, the method comprising: generating a plasma with a remote plasma source to create plasma effluents of a first precursor; bypassing the remote plasma source with a second precursor flowed into a gas distribution assembly, wherein the gas distribution assembly is fluidly coupled with the remote plasma source; contacting the second precursor with the plasma effluents of the first precursor to produce an etching formula, wherein the contacting occurs externally to a processing chamber; and etching materials on a substrate housed within the processing chamber with the etching formula.

[0040] A semiconductor processing system comprising: a processing chamber; a first plasma source utilizing a first electrode positioned externally to the processing chamber, wherein the first plasma source is configured to generate a first plasma; a second plasma source separate from the first plasma source, wherein the second plasma source utilizes a second electrode separate from the first electrode, wherein the second electrode is positioned externally to the processing chamber, and wherein the second plasma source is configured to generate a second plasma within the processing chamber; and a first showerhead disposed between the relative locations of the first plasma electrode and the second plasma electrode.

[0041] The semiconductor processing system of paragraph [0040], further comprising a second showerhead positioned fluidly downstream from the location in which the second plasma is configured to be generated.

[0042] The semiconductor processing system of paragraph [0041], further comprising an insulator positioned between the first showerhead and the second showerhead.

[0043] The semiconductor processing system of paragraph [0041], wherein the second showerhead comprises a multi-channel showerhead.

[0044] The semiconductor processing system of paragraph [0040], wherein the second plasma source comprises an inductively coupled plasma source.

[0045] The semiconductor processing system of paragraph [0044], wherein the inductively coupled plasma source comprises at least two separate coils arranged about the processing chamber.

[0046] The semiconductor processing system of paragraph [0045], wherein the inductively coupled plasma source comprises at least four separate coils arranged about the processing chamber.

[0047] The semiconductor processing system of paragraph [0046], wherein the at least four separate coils are displaced about the processing chamber from each other by about 90°. [0048] The semiconductor processing system of paragraph [0044], further comprising a second showerhead disposed fluidly upstream from the location in which the inductively coupled plasma is configured to be generated.

[0049] The semiconductor processing system of paragraph [0040], wherein the first plasma source is electrically coupled with a first RF source.

[0050] The semiconductor processing system of paragraph [0049], wherein the second plasma source is electrically coupled with a second RF source separate from the first RF source.

[0051] The semiconductor processing system of paragraph [0050], wherein the first RF source is configured to operate at a first plasma frequency, and the second RF source is configured to operate at a second plasma frequency greater than the first plasma frequency.

[0052] A semiconductor processing system comprising: a processing chamber having a top plate; and a plasma generation device coupled with the top plate, wherein the plasma generation device comprises: a plasma generation device housing, a nozzle positioned within the plasma generation device housing, wherein the nozzle comprises a fluid injection port, and wherein the nozzle comprises an insulative material, a plasma electrode positioned within the plasma generation device housing and coupled externally with the nozzle, wherein the plasma electrode is configured to generate a plasma within the nozzle.

[0053] The semiconductor processing system of paragraph [0052], wherein the plasma electrode comprises at least two separate coils arranged about the nozzle.

[0054] An etching method, the method comprising: striking a first plasma with a first plasma source comprising an inductively coupled plasma source; creating a flux of non-reactive ions; delivering the ions to a substrate; etching materials on the substrate; striking a second plasma with a second plasma source separate from the first plasma source to create plasma effluents of a first precursor; bypassing the second plasma with a second precursor; contacting the second precursor with the plasma effluents of the first precursor to produce an etching formula; and etching materials on a substrate housed within a processing chamber with the etching formula.

BRIEF DESCRIPTION OF THE DRAWINGS

[0055] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings.

[0056] FIG. 1 shows a top plan view of an exemplary processing system according to the present technology. [0057] FIG. 2 shows a schematic cross-sectional view of an exemplary processing chamber according to the present technology.

[0058] FIG. 3 shows a schematic cross-sectional view of a portion of an exemplary processing system according to the disclosed technology.

[0059] FIG. 4 shows a schematic cross-sectional view of a portion of an exemplary processing chamber according to the disclosed technology.

[0060] FIG. 5 shows a method of etching that may reduce film contamination according to the present technology.

[0061] FIG. 6 shows a schematic cross-sectional view of a portion of an exemplary processing chamber according to the disclosed technology.

[0062] FIGS. 7A-7B show schematic cross-sectional views of a portion of an exemplary distribution assembly according to the disclosed technology.

[0063] FIG. 8 shows a method of etching that may reduce film contamination according to the present technology.

[0064] FIG. 9 shows a schematic cross-sectional view of a portion of an exemplary processing chamber according to the disclosed technology.

[0065] FIG. 10 shows a bottom plan view of a showerhead according to the disclosed technology.

[0066] FIG. 11 shows a schematic cross-sectional view of a portion of an exemplary processing chamber according to the disclosed technology.

[0067] FIG. 12 shows a schematic cross-sectional view of a portion of an exemplary processing chamber according to the disclosed technology.

[0068] FIG. 13 shows a schematic cross-sectional view of a portion of an exemplary processing chamber according to the disclosed technology.

[0069] FIG. 14 shows a schematic view of a portion of a plasma coil according to the disclosed technology.

[0070] FIG. 15 shows a schematic cross-sectional view of a portion of an exemplary plasma generation device according to the disclosed technology. [0071] FIG. 16 shows a method of etching that may reduce film contamination according to the present technology.

[0072] Several of the Figures are included as schematics. It is to be understood that the Figures are for illustrative purposes, and are not to be considered of scale unless specifically stated to be as such.

[0073] In the appended figures, similar components and/or features may have the same reference label. Further, various components of the same type may be distinguished by following the reference label by a letter that distinguishes among the similar components. If only the first reference label is used in the specification, the description is applicable to any one of the similar components having the same first reference label irrespective of the letter.

DETAILED DESCRIPTION

[0074] The present technology includes systems and components for semiconductor processing. When plasmas are formed in situ in processing chambers, such as with a capacitively coupled plasma ("CCP") for example, exposed surfaces of the chamber may be sputtered or degraded by the plasma or the species produced by the plasma. This may in part be caused by bombardment to the surfaces or surface coatings by generated plasma particles. The extent of the bombardment may itself be related to the voltage utilized in generating the plasma. For example, higher voltage may cause higher bombardment, and further degradation.

[0075] Conventional technologies have often dealt with this degradation by providing replaceable components within the chamber. Accordingly, when coatings or components themselves are degraded, the component may be removed and replaced with a new component that will in turn degrade over time. However, based on the relationship of voltage to bombardment the present systems may at least partially overcome or reduce this need to replace components by utilizing low-voltage, high-frequency, plasma generation. By utilizing high-frequency electrical sources, multiple benefits or advantages may be provided. For example, the electrode used in plasma generation, as well as coatings to the electrode, may have reduced corrosion due to bombardment because of the lower system voltage based on the V/Hz relationship if peak voltage is not adjusted at varying frequency. Additionally, utilizing high-frequency sources that allow adjustment to the frequency may provide improved plasma control over a broader frequency range. Accordingly, the systems described herein provide improved performance and cost benefits over many conventional designs. These and other benefits will be described in detail below.

[0076] Additionally, the present systems may at least partially overcome or reduce this need to replace components by utilizing external plasma generation. Remote plasma sources may provide multiple benefits over internal plasma sources. For example, the remote plasma chamber core may be coated or composed of material specifically selected based on the plasma being produced. In this way, the remote plasma unit or components of the remote plasma unit such as the electrode may be protected to reduce wear and increase system life. Some conventional technologies utilizing remote plasma systems have reduced operational performance due to recombination of the plasma effluents based on longer flow paths. The present technology, however, may additionally overcome such issues by utilizing an inlet distribution system that reduces the length of travel for plasma species, as well as by allowing the generated plasma effluents to interact with other precursors nearer to the plasma source. Accordingly, the systems described herein provide improved performance and cost benefits over many conventional designs. These and other benefits will be described in detail below.

[0077] Moreover, by utilizing configurations in which plasma is formed externally to the chamber, or in which the plasma electrode is positioned externally to the chamber, multiple benefits or advantages may be provided. For example, the electrode positioned outside of the chamber may have reduced corrosion as it may not be exposed to plasma. Additionally, forming certain plasmas externally to the chamber may reduce degradation of internal chamber components over time. Accordingly, the systems described herein provide improved performance and cost benefits over many conventional designs. These and other benefits will be described in detail below.

[0078] Although the remaining disclosure will routinely identify specific etching processes utilizing the disclosed technology, it will be readily understood that the systems and methods are equally applicable to deposition and cleaning processes as may occur in the described chambers. Accordingly, the technology should not be considered to be so limited as for use with etching processes alone.

[0079] FIG. 1 shows a top plan view of one embodiment of a processing system 100 of deposition, etching, baking, and curing chambers according to embodiments. The processing tool 100 depicted in FIG. 1 may contain a plurality of process chambers, 114A-D, a transfer chamber 110, a service chamber 116, an integrated metrology chamber 117, and a pair of load lock chambers 106A-B. The process chambers may include structures or components similar to those described in relation to Figure 2, as well as additional processing chambers.

[0080] To transport substrates among the chambers, the transfer chamber 110 may contain a robotic transport mechanism 1 13. The transport mechanism 113 may have a pair of substrate transport blades 113A attached to the distal ends of extendible arms 113B, respectively. The blades 113A may be used for carrying individual substrates to and from the process chambers. In operation, one of the substrate transport blades such as blade 113A of the transport mechanism 113 may retrieve a substrate W from one of the load lock chambers such as chambers 106A-B and carry substrate W to a first stage of processing, for example, an etching process as described below in chambers 114A-D. If the chamber is occupied, the robot may wait until the processing is complete and then remove the processed substrate from the chamber with one blade 113A and may insert a new substrate with a second blade (not shown). Once the substrate is processed, it may then be moved to a second stage of processing. For each move, the transport mechanism 113 generally may have one blade carrying a substrate and one blade empty to execute a substrate exchange. The transport mechanism 113 may wait at each chamber until an exchange can be accomplished.

[0081] Once processing is complete within the process chambers, the transport mechanism 113 may move the substrate W from the last process chamber and transport the substrate W to a cassette within the load lock chambers 106A-B. From the load lock chambers 106A-B, the substrate may move into a factory interface 104. The factory interface 104 generally may operate to transfer substrates between pod loaders 105A-D in an atmospheric pressure clean environment and the load lock chambers 106A-B. The clean environment in factory interface 104 may be generally provided through air filtration processes, such as HEPA filtration, for example. Factory interface 104 may also include a substrate orienter/aligner (not shown) that may be used to properly align the substrates prior to processing. At least one substrate robot, such as robots 108A- B, may be positioned in factory interface 104 to transport substrates between various

positions/locations within factory interface 104 and to other locations in communication therewith. Robots 108A-B may be configured to travel along a track system within enclosure 104 from a first end to a second end of the factory interface 104.

[0082] The processing system 100 may further include an integrated metrology chamber 117 to provide control signals, which may provide adaptive control over any of the processes being performed in the processing chambers. The integrated metrology chamber 117 may include any of a variety of metrological devices to measure various film properties, such as thickness, roughness, composition, and the metrology devices may further be capable of characterizing grating parameters such as critical dimensions, sidewall angle, and feature height under vacuum in an automated manner.

[0083] Turning now to FIG. 2 is shown a cross-sectional view of an exemplary process chamber system 200 according to the present technology. Chamber 200 may be used, for example, in one or more of the processing chamber sections 114 of the system 100 previously discussed Generally, the etch chamber 200 may include a first capacitively-coupled plasma source to implement an ion milling operation and a second capacitively-coupled plasma source to implement an etching operation and to implement an optional deposition operation. The chamber 200 may include grounded chamber walls 240 surrounding a chuck 250. In embodiments, the chuck 250 may be an electrostatic chuck that clamps the substrate 202 to a top surface of the chuck 250 during processing, though other clamping mechanisms as would be known may also be utilized. The chuck 250 may include an embedded heat exchanger coil 217. In the exemplary embodiment, the heat exchanger coil 217 includes one or more heat transfer fluid channels through which heat transfer fluid, such as an ethylene glycol/water mix, may be passed to control the temperature of the chuck 250 and ultimately the temperature of the substrate 202.

[0084] The chuck 250 may include a mesh 249 coupled to a high voltage DC supply 248 so that the mesh 249 may carry a DC bias potential to implement the electrostatic clamping of the substrate 202. The chuck 250 may be coupled with a first RF power source and in one such embodiment, the mesh 249 may be coupled with the first RF power source so that both the DC voltage offset and the RF voltage potentials are coupled across a thin dielectric layer on the top surface of the chuck 250. In the illustrative embodiment, the first RF power source may include a first and second RF generator 252, 253. The RF generators 252, 253 may operate at any industrially utilized frequency, however in the exemplary embodiment the RF generator 252 may operate at 60 MHz to provide advantageous directionality. Where a second RF generator 253 is also provided, the exemplary frequency may be 2 MHz.

[0085] With the chuck 250 to be RF powered, an RF return path may be provided by a first showerhead 225. The first showerhead 225 may be disposed above the chuck to distribute a first feed gas into a first chamber region 284 defined by the first showerhead 225 and the chamber wall 240. As such, the chuck 250 and the first showerhead 225 form a first RF coupled electrode pair to capacitively energize a first plasma 270 of a first feed gas within a first chamber region 284. A DC plasma bias, or RF bias, resulting from capacitive coupling of the RF powered chuck may generate an ion flux from the first plasma 270 to the substrate 202, e.g., Ar ions where the first feed gas is Ar, to provide an ion milling plasma. The first showerhead 225 may be grounded or alternately coupled with an RF source 228 having one or more generators operable at a frequency other than that of the chuck 250, e.g., 13.56 MHz or 60 MHz. In the illustrated embodiment the first showerhead 225 may be selectably coupled to ground or the RF source 228 through the relay 227 which may be automatically controlled during the etch process, for example by a controller (not shown). In disclosed embodiments, chamber 200 may not include showerhead 225 or dielectric spacer 220, and may instead include only baffle 215 and showerhead 210 described further below.

[0086] As further illustrated in the figure, the etch chamber 200 may include a pump stack capable of high throughput at low process pressures. In embodiments, at least one turbo molecular pump 265, 266 may be coupled with the first chamber region 284 through one or more gate valves 260 and disposed below the chuck 250, opposite the first showerhead 225. The turbo molecular pumps 265, 266 may be any commercially available pumps having suitable throughput and more particularly may be sized appropriately to maintain process pressures below or about 10 mTorr or below or about 5 mTorr at the desired flow rate of the first feed gas, e.g., 50 to 500 seem of Ar where argon is the first feedgas. In the embodiment illustrated, the chuck 250 may form part of a pedestal which is centered between the two turbo pumps 265 and 266, however in alternate configurations chuck 250 may be on a pedestal cantilevered from the chamber wall 240 with a single turbo molecular pump having a center aligned with a center of the chuck 250.

[0087] Disposed above the first showerhead 225 may be a second showerhead 210. In one embodiment, during processing, the first feed gas source, for example, Argon delivered from gas distribution system 290 may be coupled with a gas inlet 276, and the first feed gas flowed through a plurality of apertures 280 extending through second showerhead 210, into the second chamber region 281, and through a plurality of apertures 282 extending through the first showerhead 225 into the first chamber region 284. An additional flow distributor or baffle 215 having apertures 278 may further distribute a first feed gas flow 216 across the diameter of the etch chamber 200 through a distribution region 218. In an alternate embodiment, the first feed gas may be flowed directly into the first chamber region 284 via apertures 283 which are isolated from the second chamber region 281 as denoted by dashed line 223.

[0088] Chamber 200 may additionally be reconfigured from the state illustrated to perform an etching operation. A secondary electrode 205 may be disposed above the first showerhead 225 with a second chamber region 281 there between. The secondary electrode 205 may further form a lid or top plate of the etch chamber 200. The secondary electrode 205 and the first showerhead 225 may be electrically isolated by a dielectric ring 220 and form a second RF coupled electrode pair to capacitively discharge a second plasma 292 of a second feed gas within the second chamber region 281. Advantageously, the second plasma 292 may not provide a significant RF bias potential on the chuck 250. At least one electrode of the second RF coupled electrode pair may be coupled with an RF source for energizing an etching plasma. The secondary electrode 205 may be electrically coupled with the second showerhead 210. In an exemplary embodiment, the first showerhead 225 may be coupled with a ground plane or floating and may be coupled to ground through a relay 227 allowing the first showerhead 225 to also be powered by the RF power source 228 during the ion milling mode of operation. Where the first showerhead 225 is grounded, an RF power source 208, having one or more RF generators operating at 13.56 MHz or 60 MHz, for example, may be coupled with the secondary electrode 205 through a relay 207 which may allow the secondary electrode 205 to also be grounded during other operational modes, such as during an ion milling operation, although the secondary electrode 205 may also be left floating if the first showerhead 225 is powered.

[0089] A second feed gas source, such as nitrogen trifluoride, and a hydrogen source, such as ammonia, may be delivered from gas distribution system 290, and coupled with the gas inlet 276 such as via dashed line 224. In this mode, the second feed gas may flow through the second showerhead 210 and may be energized in the second chamber region 281. Reactive species may then pass into the first chamber region 284 to react with the substrate 202. As further illustrated, for embodiments where the first showerhead 225 is a multi-channel showerhead, one or more feed gases may be provided to react with the reactive species generated by the second plasma 292. In one such embodiment, a water source may be coupled with the plurality of apertures 283.

[0090] In an embodiment, the chuck 250 may be movable along the distance H2 in a direction normal to the first showerhead 225. The chuck 250 may be on an actuated mechanism surrounded by a bellows 255, or the like, to allow the chuck 250 to move closer to or farther from the first showerhead 225 as a means of controlling heat transfer between the chuck 250 and the first showerhead 225, which may be at an elevated temperature of 80°C - 150°C, or more. As such, an etch process may be implemented by moving the chuck 250 between first and second

predetermined positions relative to the first showerhead 225. Alternatively, the chuck 250 may include a lifter 251 to elevate the substrate 202 off a top surface of the chuck 250 by distance HI to control heating by the first showerhead 225 during the etch process. In other embodiments, where the etch process is performed at a fixed temperature such as about 90-110°C for example, chuck displacement mechanisms may be avoided. A system controller (not shown) may alternately energize the first and second plasmas 270 and 292 during the etching process by alternately powering the first and second RF coupled electrode pairs automatically.

[0091] The chamber 200 may also be reconfigured to perform a deposition operation. A plasma 292 may be generated in the second chamber region 281 by an RF discharge which may be implemented in any of the manners described for the second plasma 292. Where the first showerhead 225 is powered to generate the plasma 292 during a deposition, the first showerhead 225 may be isolated from a grounded chamber wall 240 by a dielectric spacer 230 so as to be electrically floating relative to the chamber wall. In the exemplary embodiment, an oxidizer feed gas source, such as molecular oxygen, may be delivered from gas distribution system 290, and coupled with the gas inlet 276. In embodiments where the first showerhead 225 is a multi-channel showerhead, any silicon-containing precursor, such as OMCTS for example, may be delivered from gas distribution system 290, and directed into the first chamber region 284 to react with reactive species passing through the first showerhead 225 from the plasma 292. Alternatively the silicon-containing precursor may also be flowed through the gas inlet 276 along with the oxidizer.

[0092] FIG. 3 shows a schematic cross-sectional view of a portion of an exemplary processing system 300 according to the disclosed technology. As illustrated, system 300 includes a more detailed view of an exemplary version of a top portion and related components of, for example, system 200 as previously described. Semiconductor processing system 300 may include a high- frequency electrical source 305 that includes an outlet plug 307. Via an inlet gas assembly, the multiple components of which are identified as 315, electrical source 305 may be coupled with a processing chamber 310 including top plate 312, which may be similar in aspects to top cover 205 as previously described. Inlet gas assembly 315 may include a number of components utilized in generating the plasma and delivering precursors into chamber 310. The inlet gas assembly may be coupled with the top plate 312 via an insulator 325 that may be configured to electrically insulate the top plate 312 from the electrode 320. Electrode 320 may define an aperture 322 that, at a first end, may be configured to receive outlet plug 307 of electrical source 305. Electrode 320 may be made of a variety of conductive materials and metals, and in embodiments may include coatings, such as metal coatings including transition metals, including nickel, for example. As will be explained in greater detail with reference to FIG. 4, aperture 322 may be characterized at the first end by a first diameter, and a second end of the aperture 322 opposite the first end may be characterized by a second diameter less than the first diameter.

[0093] Inlet insulator 325 may define an insulator opening 327 in which may be positioned a nozzle 330 configured to deliver precursors for plasma processing. As illustrated in the figure, nozzle 330 may define a channel extending through the device, which may be configured to affect the flow of precursors being delivered. For example, embodiments may include a cylindrical portion of nozzle 330 extending to a conical portion of nozzle 330 which may increase radially towards processing chamber 310. Such a configuration may affect the precursor distribution in plasma generation, which may aid uniformity of the plasma within the processing chamber 310. System 300 may further include an ignition rod 335 as part of the inlet assembly 315. Ignition rod 335 may be positioned between the electrode 320 and the nozzle 330, and at least a portion of the ignition rod 335 may extend into the channel defined by the nozzle 330.

[0094] Ignition rod 335 may include a first surface 336 in which an ignition opening may be defined that extends into the first surface 336. A ledge may be defined within the ignition opening, and electrode 320 may be located at least partially within the ignition opening and be seated on this ledge. Processing system 300 may further include an RF insulator 340 positioned between the high-frequency electrical source 305 and ignition rod 335, which may operate to further electrically isolate the components of the inlet assembly 315. Both RF insulator 340 and inlet insulator 325 may be composed of a variety of dielectric or other insulating materials including ceramic in disclosed embodiments. As illustrated in the figure, RF insulator 340 may be coupled with the first surface of the ignition rod 335. In embodiments, at least a portion of electrode 320 may extend above the RF insulator 340 coupling with the outlet plug 307 of the electrical source 305. RF shielding 370 may additionally be included to encompass at least a portion of the ignition rod 335, the nozzle 330, and the inlet insulator 325. RF shielding 370 may also operate as an RF return in disclosed embodiments.

[0095] Semiconductor processing system 300 may include additional components within the chamber 310, including a gas distribution baffle 350 and a showerhead 360. In embodiments, showerhead 360 may include silicon as part or all of the composition. For example, showerhead 360 may be a one-piece design that is substantially composed of silicon. In additional

embodiments, showerhead 360 may be a multi-piece design in which one or more of the pieces include silicon as part or all of the composition. For example, in a two-piece coupled design, the showerhead section closer to the substrate or workpiece may be made of silicon, while the showerhead section further from the substrate or workpiece may be metal. In other multi-piece designs, one or more of the pieces may be of an insulating material while one or more of the other pieces may be of a conductive material. In this way, showerhead 360 may still be used as an electrode during plasma generation in various areas of the chamber 310. In disclosed

embodiments, at least a portion of showerhead 360 may be coated with a treatment material, which may include a variety of insulating materials including silicon and ceramics, for example.

[0096] High-frequency electrical source 305 may operate at any number of frequencies useful for producing plasma, including variable frequencies, and in embodiments may be configured to provide high-frequency, low-voltage electrical power. Thus, in disclosed embodiments, the high- frequency electrical source 305 may be configured to operate at frequencies of up to or at least 10 MHz. Additionally, the high-frequency electrical source may be configured to operate at frequencies of at least, up to, or about 13 or 13.56 MHz, 40 MHz, 60 MHz, 100 MHz, 400 MHz, 1000 MHz, 2450 MHz, etc., or more. However, such electrical sources may include much larger outlet plugs 307 requiring specialized inlet assembly 315 components in order to couple the power supplies.

[0097] Many conventional power supplies utilized in plasma generation may provide power down below 100 kHz, 10 kHz, or less. Such power supplies often have small outlet plugs to be coupled with a processing chamber. Accordingly, common inlet assembly arrangements may be designed to couple with such power supplies. Modifying the system to accommodate a high- frequency electrical power supply may require significant modifications to the inlet assembly to accommodate not only larger outlet plug sizes, but also the increased weight of the power supply itself. Embodiments of the present technology may be specifically configured to accommodate such high-frequency power supplies as will be described in detail herein.

[0098] In order to accommodate the increased size and weight of the high-frequency electrical source 305, a mounting plate 380 may be positioned above RF insulator 340 in order to properly balance and support the power supply 305. Electrode 320 may include a portion extending to receive the outlet plug 307, and this portion may be of an increased size or diameter, such as of a diameter greater than the thickness of the electrode in order to support additional strain from the electrical source 305 and help reduce the chance of sheer or deformation of electrode 320.

Semiconductor processing system 300 may additionally include floating supports 385 that may provide further support during operation. Processing system 300 may include one or more o-rings 375 which may aid in reducing leakage during operation, which may occur under vacuum conditions. Compression of o-rings 375 may occur both from vacuum conditions as well as from the weight of high-frequency electrical source 305. In such case, o-rings 375 may compress to an extent to allow floating legs 385 to engage top plate 312 with chamber 310. Floating legs 385 may then in turn reduce strain on inlet assembly 315 components as well as aid in reducing vibration during operation.

[0099] Turning to FIG. 4, shown is a schematic cross-sectional view of a portion of an exemplary processing chamber 400 according to the disclosed technology, which includes a detailed view of inlet assembly 315 previously described. Accordingly, semiconductor processing chamber 400 may include similar components as chamber 300 including a processing chamber having a top plate with which the illustrated structures are coupled. Semiconductor processing system 400 may include a high-frequency electrical source 405 including an outlet plug 407 seated on mounting plate 480, as well as electrode 420 positioned between the processing chamber (not shown) and the high-frequency electrical source 405. Semiconductor processing system 400 may further include an ignition rod 435 at least partially housing the electrode 420 as well as an RF insulator 440 positioned between the ignition rod 435 and the high-frequency electrical source 405. The system may further include a nozzle 430 defining an aperture through which at least a portion of the ignition rod 435 extends. In embodiments, the system may include an inlet insulator 425 housing the nozzle 430 and coupled with the top plate (not shown) to electrically insulate the top plate from the electrode 420. An RF shield 470 may be configured to operate as an RF return and may additionally encompass at least a portion of the ignition rod 435, the nozzle 430, and the inlet insulator 425.

[0100] As previously described but illustrated in the figure in greater detail, ignition rod 435 may include a first surface 436, which faces the electrical source 405. Ignition rod 435 may further define an ignition opening 438 that may define a ledge or bottom of the ignition opening 439. Electrode 420 may be located at least partially within opening 438 and be seated on the ledge 439 of the ignition rod 435. At least a portion of electrode 420 may extend beyond first surface 436 of ignition rod 435 as well as beyond RF insulator 440 towards electrical source 405. The portion of electrode 420 extending beyond ignition rod 435 may be of a width or diameter that may be equal to or greater than the overall thickness of electrode 420, which may reduce or better accommodate strain imposed by electrical source 405. Electrode 420 may define an aperture 422 characterized by a first end proximate electrical source 405 and a second end opposite the first end. In disclosed embodiments, aperture 422 may not fully extend through electrode 420. The first end of aperture 422 may be characterized by a first diameter, and the second end of the aperture 422 may be characterized by a second diameter less than the first diameter in disclosed embodiments.

[0101] FIG. 5 shows a method 500 of etching that may reduce film contamination according to the present technology. Method 500 may be performed in any of the systems previously described and may include optional operations including delivering a precursor for ionization to the system. Method 500 may include striking a plasma with a high-frequency electrical source in operation 510, which may include an operating frequency previously described, and in one embodiment may be at least 60 MHz. The method may include creating a flux of nonreactive ions in operation 520 such as from an ionization of the precursor being delivered which may include one or more precursors that may include argon, helium, hydrogen, nitrogen, and additional inert or reactive precursors.

[0102] The flux of nonreactive ions may be characterized by reduced bombardment of the system components based on the high-frequency electrical source utilized to produce the plasma. The flux of nonreactive ions may be delivered to a substrate housed in a processing chamber, and then may etch the substrate or materials on the substrate, such as with ion milling at operation 530. By reducing system and chamber component bombardment, sputtering of chamber components or coatings, such as an electrode coating, may be reduced or prevented in embodiments. The sputtered particles may be carried through the system and deposited on the substrate being worked, which may result in short-circuiting or failure of the produced device. Accordingly, by utilizing the described methods increased device quality may be provided as well as increased chamber component life.

[0103] FIG. 6 shows a schematic cross-sectional view of a portion of an exemplary processing system 600 according to the disclosed technology. As illustrated, system 600 includes a more detailed view of an exemplary version of a top portion and related components of, for example, system 200 as previously described. System 600 includes a variety of components that may be utilized to deliver precursors to a processing chamber 607 through top plate 610, which may be similar in aspects to top plate or cover 205 as previously described. Semiconductor processing system 600 may include remote plasma source 605 that may be configured to produce plasma effluents external to processing chamber 607. Plasma effluents produced in remote plasma source 605 may include a variety of reactive and nonreactive species that may include one or more precursors including argon, helium, hydrogen, nitrogen, and additional inert or reactive precursors. Once generated by remote plasma source 605, the effluents may be delivered to the processing chamber through an inlet assembly coupling the remote plasma source with the top plate 610 of the semiconductor processing chamber 607.

[0104] The inlet assembly may include a mounting assembly which may have at least two components in disclosed embodiments. A first component of an exemplary mounting assembly may include a gas block 615 which at least partially defines a central distribution channel 603 through which plasma effluents and/or precursors may be delivered to processing chamber 607. Gas block 615 may be annular in shape and may include extended support sections 617 that may provide both an increased mating platform as well as improved structural support for a larger power supply such as remote plasma source 605. A second component of the mounting assembly may include mounting block 625 further defining at least a portion of the central distribution channel 603 of the inlet assembly. Mounting block 625 may include a first mounting surface 626 and a second mounting surface 627 opposite the first mounting surface 626. In embodiments, mounting block 625 may also include extended support sections 628 providing both an increased mating platform as well as improved structural support. [0105] Portions of mounting block 625 may define multiple sections of central distribution channel 603, and may define similar or different shapes of the channel from each other. For example, a first section 630 of mounting block 625 may define a first section of the central distribution channel 603 extending from the first mounting surface 626 to an intermediate portion of mounting block 625. In embodiments the first section 630 of mounting block 625 may be characterized by a cylindrical shape, or the section may be characterized by a first diameter. A second section 635 of mounting block 625 may be characterized by a similar or different shape than first section 630 of mounting block 625. In embodiments, second section 635 of mounting block 625 may define a second section of central distribution channel 603 extending from the intermediate portion of mounting block 625 to the second mounting surface 627. Second section 635 of mounting block 625 may be characterized by a conical shape, or may be characterized by an increasing diameter at least partially along the intermediate portion of mounting block 625 to the second mounting surface 627.

[0106] The inlet assembly coupling the remote plasma source with the top plate 610 may further include a precursor distribution assembly 620 defining a plurality of distribution channels fluidly coupled with an injection port 622, which may be a single injection port in disclosed embodiments. As illustrated, injection port 622 may be fluidly coupled with a precursor injection line 624 configured to provide precursors which may bypass remote plasma source 605. Precursor distribution assembly 620 will be discussed in greater detail below with reference to FIGS. 7A-7B. Precursor distribution assembly 620 may include a first surface 621 which may be coupled with gas block 615. Precursor distribution assembly 620 may further include a second surface 623 opposite first surface 621 and coupled with mounting block 625. In this way, the two components of the mounting assembly may be spatially separated by the precursor distribution assembly 620.

[0107] Mounting block 625 may be coupled with processing chamber 607 in a variety of ways, one embodiment of which is illustrated in FIG. 6. Top plate 610 may include a first surface 609 in which an opening 612 is defined. Top plate 610 may also include a second surface 611 opposite the first surface 609. Opening 612 may be defined in top plate 610 from upper surface 609 to a lower surface 614 of opening 612. Top plate 610 may further define a plurality of outlet distribution channels 616 defined from the lower surface 614 of opening 612 to the second surface 611 of top plate 610, providing fluid communication with processing chamber 607. Outlet distribution channels 616 may be distributed through top plate 610 in a variety of patterns and may be configured to provide a more uniform flow into processing chamber 607. Within opening 612, top plate 610 may further define a ledge 613 on which mounting block 625 may be seated. Within ledge 613 one or more o-rings 640 may be included to provide a seal between the inlet assembly via mounting block 625 and chamber 607 via top plate 610.

[0108] Many conventional power supplies utilized in plasma generation may provide power down below 100 kHz, 10 kHz, or less. Such power supplies often have a smaller footprint along with a lower weight of the electrical source itself. Modifying the system to accommodate the remote plasma source 305 may require significant modifications to the inlet assembly to accommodate not only the larger size, but also the increased weight of the supply itself.

Embodiments of the present technology may be specifically configured to accommodate such a remote plasma source as will be described in detail herein.

[0109] In order to accommodate the increased size and weight of the high-frequency electrical source 605, semiconductor processing system 600 may further include support assembly 650 in order to properly balance and support remote plasma source 605. The support assembly 650 may include any number of mounting plates or other structural devices in order to provide such balance and support. Support assembly 650 coupled with the remote plasma source 605 may additionally include floating supports 655 that may provide further support in stabilization during system operation. In embodiments the support assembly may include at least one, e.g. 1, 2, 3, 4, 8, 12, 20, etc. or more, support extension 655 extending from the support assembly 650 towards top plate 610. Support extensions 655 may include a variety of shapes configured for bearing the weight of remote plasma source 605, and as illustrated in FIG. 6, may include an S-shape in disclosed embodiments.

[0110] Support extensions 655 may be separated from top plate 610 in a first operational position in disclosed embodiments. Such a first operational position is illustrated in FIG. 6 and shows a gap between the support extensions 655 and top plate 610. Although illustrated as a defined gap in FIG. 6, it is to be understood that the first operational position may include any degree of spacing between the support extensions 655 and top plate 610 including a first degree of contact between the structures. Support extensions 655 may be utilized and configured to contact top plate 610 in a second operational position engageable during a processing operation.

[0111] As previously discussed, o-rings 640 may be used in the coupling of mounting block 625 with top plate 610, and may aid in reducing leakage during operation, which may occur under vacuum conditions. Compression of o-rings 640 may occur both from vacuum conditions as well as from the weight of remote plasma source 605. In such case, o-rings 640 may compress to an extent to allow support extensions 655 to engage top plate 610 of chamber 607 in the discussed second operational position. In a situation in which support extensions 655 contact top plate 610 in the first operational position, the second operational position may be differentiated from the first operational position by a second degree of contact between the support extensions 655 and top plate 610. In such a situation the second degree of contact may be greater or at a higher force than the first degree of contact, and may be due at least in part to vacuum conditions enacted during a processing operation. Support extensions 655 may then in turn reduce strain on the inlet assembly components as well as aid in reducing vibration during operation.

[0112] Turning to FIGS. 7 A and 7B, shown are schematic cross-sectional views of a portion of an exemplary precursor distribution assembly 700 according to the disclosed technology, which includes a detailed view of an embodiment of precursor distribution assembly 620 previously described. As illustrated in FIGS. 7A-7B, the precursor distribution assembly 700 may include one or more plates, such as two plates 705, 750 as illustrated, and may include an annular shape defining at least a portion of the central distribution channel. In embodiments the precursor distribution assembly 700 may include up to or more than 1, 2, 3, 4, 5, 7, 10, etc. or more plates coupled together to produce the precursor distribution assembly 700. As illustrated, the figures show a view of the precursor distribution assembly from the position of a remote plasma source, such as remote plasma source 605 previously described, and including a view of outlet distribution channels 798, or in disclosed embodiments apertures of a baffle plate or showerhead included within a processing chamber. In disclosed embodiments the precursor distribution assembly 700 may include at least two coupled plates, which at least partially define a plurality of distribution channels as will be described below.

[0113] FIG. 7A illustrates a view of a first plate 705 which may be located proximate a gas block, such as gas block 615 previously described. First plate 705 may be annular in shape including an inner diameter 707 and an outer diameter 708. First plate 705 may additionally define at least a portion of a central distribution channel 709 which may be similar to the central distribution channel 603 previously described. In disclosed embodiments first plate 705 may be characterized by shapes other than an annular shape.

[0114] First plate 705 may define an inlet port 710, which may be similar to the precursor injection port 622 previously described. Inlet port 710 may provide access to a fluid delivery channel 712 also defined in first plate 705. When coupled with a precursor source, such a configuration may provide a way in which the precursor may be distributed to a processing chamber while bypassing a remote plasma source. Delivery channel 712 may be fluidly coupled with a first distribution channel 715 defined between the inner diameter 707 and outer diameter 708, and extending tangentially from delivery channel 712 and injection port 710. First distribution channel 715 may at least partially extend about an interior circumference of first plate 705. In embodiments first distribution channel 715 extends bidirectionally about such a circumference from delivery channel 712, and may extend up to a full circumference of the interior circumference. As illustrated in FIG. 7A, first distribution channel 715 may extend partially about the interior circumference, and may extend up to about 25%, about 50%, about 75%, or any other percent up to 100% of the full circumference. In embodiments first distribution channel 715 may extend about 50% of an interior circumference, or about 25% in each direction from delivery channel 712, before extending to at least two secondary distribution channels 720, 730.

[0115] Secondary distribution channels 720, 730 may extend in a similar or different fashion than the first distribution channel 715 from delivery channel 712. As illustrated, secondary distribution channels 720, 730 may extend bidirectionally from distal portions of first distribution channel 715 about a second interior circumference of first plate 705 that is smaller than the first interior circumference. Secondary distribution channels 720, 730 may extend partially about the second interior circumference, and may extend up to about 25%, about 50%, about 75%, or any other percent up to 100% of the full second interior circumference. In one embodiment as illustrated in FIG. 7A, secondary distribution channels 720, 730 each extend less than about 30% of the full circumference of the second interior circumference.

[0116] Each secondary distribution channel 720, 730 may extend about the second interior circumference to two positions, such as positions 722, 724 as illustrated for second distribution channel 720. The secondary distribution channels may extend tangentially from first distribution channel 715 to at least two tertiary distribution apertures, such as apertures 725 A, 727A as illustrated in FIG. 7A for secondary distribution channel 720. The tertiary distribution apertures may be located at distal portions of the secondary distribution channels, and may be proximate the end positions, such as proximate positions 722, 724 as illustrated. The tertiary distribution apertures may be at least partially defined by top plate 705, and may provide access to second plate 750. Although circumference is used in reference to a generally circular shape, it is understood that alternative geometries may be used for the distribution channels, and circumference may generally refer to a perimeter of such geometries.

[0117] FIG. 7B illustrates a view of a second plate 750 which may be located proximate a mounting block, such as mounting block 625 previously described. Second plate 750 may be annular in shape including an inner diameter 752 and an outer diameter 754. Second plate 750 may additionally define at least a portion of a central distribution channel 756 which may be similar to the central distribution channel 603 previously described. In disclosed embodiments second plate 750 may be characterized by shapes other than an annular shape.

[0118] Second plate 750 may at least partially define a portion of at least two tertiary distribution apertures 725B, 727B, which may provide fluid communication between first plate 705 and second plate 750 via the coupled tertiary distribution apertures, which may be partially defined by each plate. Second plate 750 may also at least partially define at least two tertiary distribution channels extending from the at least two tertiary distribution apertures. As illustrated in Fig. 7B, four tertiary distribution channels 732, 734, 736, 738 are illustrated extending into a third interior circumference that may be equal to, greater than, or less than the second interior circumference. Each tertiary distribution channel may extend bidirectionally from a tertiary distribution aperture about the third interior circumference. Each tertiary distribution channel may extend partially about the third interior circumference, and may extend up to about 25%, about 50%>, about 75%, or any other percent up to 100% of the full third interior circumference. In disclosed embodiments, each tertiary distribution channel extends less than about 25% of the third interior circumference,

[0119] Second plate 750 may further define at least two quaternary distribution channels extending from the at least two tertiary distribution channels. As illustrated in Fig. 7B, second plate 750 defines at least one quaternary distribution channel 740 extending from each tertiary distribution channel, and in embodiments a plurality of quaternary distribution channels 740 extend from each tertiary distribution channel. Quaternary distribution channels 740 may extend to inner diameter 752 and provide access to the at least partially defined central distribution channel 756. Accordingly, as illustrated in the two schematics the precursor distribution assembly 700 may define a plurality of distribution channels fluidly coupled with a single injection port, where the precursor distribution assembly includes at least two annular plates coupled with each other and at least partially defining a central distribution channel.

[0120] A first plate of the at least two annular plates may define a fluid injection port as well as a first distribution channel tangentially extending from this injection port. A second plate of the at least two annular plates defines at least two secondary distribution channels, such as the tertiary and quaternary distribution channels discussed, where the secondary distribution channels are in fluid communication with the first distribution channel and the central distribution channel to provide an injected fluid substantially uniformly to the central distribution channel. This distribution configuration may provide a number of benefits over conventional schemes. For example, precursor mixing between a radicalized precursor provided by a remote plasma source and a non-radicalized precursor provided through the injection port of the precursor distribution assembly may occur prior to the precursors entering the processing chamber. In this way, less recombination may occur from the radicalized species because of the shorter flow path provided by this design. Additionally, the precursor distribution assembly may provide improved and more uniform interaction between the precursors based on the distribution channels within the precursor distribution assembly providing the injected precursor more uniformly across the central distribution channel.

[0121] FIG. 8 shows a method 800 of etching that may reduce film contamination and provide more uniform precursor distribution according to the present technology. Method 800 may be performed in any of the systems previously described and may include optional operations including delivering a precursor for ionization to a remote plasma source. Method 800 may include generating a plasma within a remote plasma source to create plasma effluents of the first precursor in operation 810. The remote plasma source may operate in a variety of plasma powers including up to 1000 Watts, 6000 Watts, 8000 Watts, 10,000 Watts, etc. or more. Method 800 may further include bypassing the remote plasma source with a second precursor flowed into a gas distribution assembly at operation 820. The gas distribution assembly may be fluidly coupled with a remote plasma source, such as via a central distribution channel.

[0122] Method 800 may also include contacting the second precursor with the plasma effluents of the first precursor to produce an etching formula at operation 830. Contacting the precursors may occur externally to a processing chamber in which the etching may be performed, such as in the central distribution channel. At operation 840, after allowing the precursors to interact, the etching formula may be flowed into a processing chamber in which a substrate may be housed, and materials on the substrate may be etched with the etching formula. By forming the plasma and plasma effluents externally to the processing chamber, degradation of chamber components or coatings may be reduced or prevented in embodiments. The sputtered particles may be carried through the system and deposited on the substrate being worked, which may result in short- circuiting or failure of the produced device. Accordingly, by utilizing the described methods increased device quality may be provided as well as increased chamber component life.

Additionally, by utilizing a gas distribution assembly or precursor distribution assembly, such as those discussed previously, the methods may provide a more uniform distribution of the etching formula due to improved interaction and mixing provided in the central distribution channel.

Consequently, more uniform etching may be performed on materials on the substrate, which may improve overall device quality. [0123] FIG. 9 shows a schematic cross-sectional view of a portion of an exemplary processing system 900 according to the disclosed technology. As illustrated, system 900 includes a more detailed view of an exemplary version of a top portion and related components of, for example, system 200 as previously described. Semiconductor processing system 900 may include a processing chamber 905, as well as a first plasma source 910 configured to generate a first plasma. Via an inlet gas assembly, first plasma source 910 may be coupled with a processing chamber 905 including top plate 907, which may be similar in aspects to top cover 205 as previously described. The inlet gas assembly may include a number of components utilized in generating the plasma and delivering precursors into chamber 905. The inlet gas assembly may be coupled with the top plate 907 via an insulator 912 that may be configured to electrically insulate the top plate 907 from a first electrode 914. First electrode 914 may be made of a variety of conductive materials and metals, and in embodiments may include coatings, such as metal coatings including transition metals, including nickel, for example. As shown in the figure, first plasma source 910 utilizing first electrode 914 may both be positioned externally to the processing chamber in disclosed embodiments.

[0124] Inlet insulator 912 may define an opening in which may be positioned a nozzle 916 configured to deliver precursors for plasma processing. As the nozzle 916 typically aids plasma generation as well, the nozzle 916 may include metal or conductive components. As illustrated in the figure, nozzle 916 may define a channel extending through the device, which may be configured to affect the flow of precursors being delivered. Such a configuration may affect the precursor distribution in plasma generation, which may aid uniformity of the plasma within the processing chamber 905. System 900 may further include an ignition rod 918 as part of the inlet assembly. Ignition rod 918 may be positioned between the electrode 914 and the nozzle 916, and at least a portion of the ignition rod 918 may extend into the channel defined by the nozzle 916.

[0125] Ignition rod 918 may define an opening, and electrode 914 may be located at least partially within the opening and be seated within the ignition rod 918. Processing system 900 may further include an RF insulator 919 positioned between the first plasma source 905 and ignition rod 918, which may operate to further electrically isolate the components of the inlet assembly. Both RF insulator 919 and inlet insulator 912 may be composed of a variety of dielectric or other insulating materials including ceramic in disclosed embodiments.

[0126] Semiconductor processing system 900 may include a second plasma source 920 separate from first plasma source 910. Second plasma source 920 may utilize a second electrode 922 separate from first electrode 914. As illustrated, the second electrode 922 may also be positioned externally to processing chamber 905, but may be contained within a plasma shield 924. Second plasma source 920 may be configured to generate a second plasma within the processing chamber 905 such as within an internal plasma region 926. Semiconductor processing system 900 may further include a first showerhead 930 disposed between the first plasma electrode 914 and the second plasma electrode 922. The system 900 may further include a second showerhead 940 positioned fluidly downstream from the location in which the second plasma is configured to be generated, such as region 926. Semiconductor processing system 900 may further include an insulator 950 positioned between the first showerhead 930 and the second showerhead 940.

[0127] Second plasma source 920 may include an inductively coupled plasma source in disclosed embodiments. As such, electrode 922 may include a coil design in which the electrode is wrapped about the chamber, such as about insulative section 950. In embodiments, electrode 922 may include a variety of metals or conductive materials, and insulator 950 may include ceramic or other insulative materials. In operation, second plasma source 920 may be used to generate a plasma that may be utilized for a variety of purposes including the ion milling operation previously described. For example, second plasma source 920 may be utilized to generate a second plasma in region 926. The precursor may be delivered into region 926 to create a flux of nonreactive ions. The precursors used may include argon, helium, hydrogen, nitrogen, and additional inert or alternatively reactive precursors. The generated flux of ions may be delivered through second showerhead 940 into a region of processing chamber 905 in which a substrate may be housed such as region 970, and an ion milling operation such as previously described may be performed on the substrate or materials on the substrate.

[0128] The first plasma source 910 may then be energized to generate a first plasma about and downstream of nozzle 916. Additional precursors, which may include a fluorine-containing precursor, may be delivered to nozzle 916 and may be energized by the first plasma to create effluents that may be utilized in an etching operation. These effluents may be contacted with an additional precursor that may have bypassed first plasma source 910, and an etching formula may be produced. This etching formula may then be delivered to a substrate contained in chamber processing region 970 to perform a selective etch against multiple materials that may be exposed on the substrate. Compared to the configuration as discussed with respect to FIG. 2, the exemplary configuration of FIG. 9, as well as the exemplary method here described, may be utilized to increase throughput of substrates such as semiconductor devices.

[0129] For example, the exemplary method discussed with respect to FIG. 2 may include a modular operation of ion milling and selective etching in which one or the other of the two plasmas is energized and an operation is performed. With the configuration of FIG. 9, however, second plasma source 920 may be maintained during the selective etching operation in disclosed embodiments. Second plasma source 920 may produce a high-density plasma within a region 926 that may be used to further process the effluents generated by first plasma source 910.

Additionally, because the precursor that bypasses first plasma source 910 may be delivered through showerhead 940, it may also bypass the second plasma generated in region 926. Two benefits of such an operational configuration include that plasma effluents generated by first plasma source 910 may have reduced recombination along the flow path because the second plasma produced in region 926 may help maintain the desired ionization. Moreover, because plasma switching may not need to be performed, substrate throughput may be increased as the time between successive operations may be reduced.

[0130] First plasma source 910 and second plasma source 920 may operate at any number of frequencies useful for producing plasma, including variable frequencies. First plasma source 910 may be electrically coupled with a first RF source, for example, and second plasma source 920 may be electrically coupled with a second RF source separate from the first RF source. In disclosed embodiments, the first plasma electrical source 910 may be configured to operate at frequencies of up to, less than, or at least about 5 kHz, 10 kHz, 50 kHz, 100 kHz, 500 kHz, 1 MHz, 13.56 MHz, 60 MHz, etc. or higher, or any frequency between any of these stated frequencies. In one embodiment, for example, the first plasma source 910 may be operated within a range of between about 5 kHz- 10 kHz. Second plasma source 920 may be operated at a similar or different frequency than first plasma source 910. For example, the first RF source may be configured to operate at a first plasma power, and the second RF source may be configured to operate at a plasma power greater than the first plasma power. In disclosed embodiments, the second plasma source 910 may be configured to operate at frequencies of up to, less than, or at least about 100 kHz, 1 MHz, 13.56 MHz, 40 MHz, 60 MHz, 100 MHz, 500 MHz, 1000 MHz, 2450 MHz, etc. or higher, or any frequency between any of these stated frequencies. In one embodiment, for example, the second plasma source 920 may be operated within a range of between about 40 MHz- 100 MHz.

[0131] As previously discussed, second showerhead 940 may be positioned downstream of plasma region 926 and may allow plasma effluents or excited derivatives of precursors or other gases created within chamber plasma region 926 or the first plasma source 910 to pass through a plurality of through-holes 956 that traverse the thickness of the plate or plates included in the showerhead. The showerhead 940 may also have one or more hollow volumes that can be filled with a precursor in the form of a vapor or gas, such as a nitrogen-containing precursor, and pass through holes 958 into substrate processing region 970, but not directly into chamber plasma region 926. In order to maintain a significant concentration of excited species penetrating from chamber plasma region 926 to substrate processing region 970, the length of the smallest diameter of the through-holes may be restricted by forming larger diameter portions of through-holes 956 part way through the showerhead 940. The length of the smallest diameter of the through-holes 956 may be the same order of magnitude as the smallest diameter of the through-holes 956 or less in disclosed embodiments.

[0132] In the embodiment shown, showerhead 940 may distribute, via through-holes 956, process gases which may contain a plasma vapor/gas such as argon, or a fluorine-containing precursor, for example. Additionally, the showerhead 940 may distribute, via smaller holes 958, a nitrogen-containing precursor that is maintained separately from the plasma region 926. The process gas or gases and the nitrogen containing precursor may be maintained fluidly separate via the showerhead 940 until the precursors separately enter the processing region 970. The precursors may contact one another once they enter the processing region and react to form an etching formula that may be used to selectively etch materials on a substrate.

[0133] FIG. 10 shows a bottom plan view of a showerhead 1000 according to the disclosed technology. Showerhead 1000 may correspond with the showerhead shown in FIG. 9. Through- holes 1056 are depicted with a larger inner-diameter (ID) on the bottom of showerhead 1000 and a smaller ID at the top. Small holes 1055 are distributed substantially evenly over the surface of the showerhead, even amongst the through-holes 1056 which may help to provide more even mixing than other embodiments.

[0134] Turning to FIG. 11, shown is a schematic cross-sectional view of a portion of an exemplary processing system 1100 according to the disclosed technology, which includes a detailed interpretation of first plasma source 910 and second plasma source 920 previously described. Accordingly, semiconductor processing system 1100 may include similar components as system 900 including a processing chamber 1105 having a top plate 1107 with which a first plasma source 1110 may be coupled. First plasma source 1110 may be coupled with the top plate 1107 via an inlet gas assembly including inlet insulator 1112, nozzle 1116, and RF insulator 1119. Semiconductor processing system 1100 further may include a precursor distributor 1160 which may be utilized to deliver one or more precursors to nozzle 1116. System 1100 may still further include at least one showerhead 1130, an insulator section 1150, additional versions of which are illustrated in FIGS. 12 and 13. One or more additional showerheads may also be included, including a multi-channel showerhead, although not shown in the figure. Such a showerhead may allow multiple precursors to be provided through separated channels while remaining fluidly separated from each other until leaving the showerhead. Also shown in the illustration is a pedestal 1165, which may be used to support a substrate via, for example, an electrostatic chuck. Although processing system 1100 may include an additional showerhead positioned below insulator section 1115, in disclosed embodiments showerhead 1130 may be a second showerhead positioned in the system that is disposed fluidly upstream from the location at which a second plasma, such as an inductively coupled plasma, may be configured to be generated.

[0135] Semiconductor processing system 1100 may additionally include a second plasma source

1120, such as an inductively coupled plasma source, coupled with an exterior portion of semiconductor processing chamber 1105 and housed by external shield 1124. Second plasma source 1120 may distribute power to one or more electrodes about processing chamber 1105. As illustrated, second plasma source 1120 may distribute power to at least two separate electrodes

1121, 1123 distributed about the chamber. Each of these electrodes may be configured as a coil distributed about at least a portion of processing chamber 1105 as spokes from second plasma source 1120. In disclosed embodiments, second plasma source 1120 may include at least four separate electrodes or coils arranged about the processing chamber, which will be discussed further below with reference to FIG. 14.

[0136] Turning to FIG. 12, shown is a schematic cross-sectional view of a portion of an exemplary processing chamber 1200 according to the disclosed technology, which illustrates further detail that may be associated with a second plasma source. A plasma source 1220, such as a second plasma source as previously described, may be distributed about processing chamber 1205 via an RF ring 1222 and one or more electrodes 1223, which may be housed by shield 1224. Electrode 1223 may be at least partially coiled about processing chamber 1205, such as around insulative section 1250. Insulative section 1250 may be composed of a variety of insulative materials including ceramics, and may be shaped to define an area within processing chamber 1205 in which a plasma may be generated. As illustrated, insulative section 1250 may be annular in shape, and may include an at least partially domed structure to define the plasma region. Electrode 1223 may be coupled about insulative section 1250 one or more times to provide a coiled structure. In disclosed embodiments, multiple electrodes may be coiled about processing chamber 1205, and may at least partially overlap with one another. Accordingly, coils 1226 and 1228 may in embodiments be part of electrode 1223 or may be one or more separate electrodes from electrode 1223.

[0137] FIG. 13 shows a schematic cross-sectional view of a portion of another exemplary processing chamber according to the disclosed technology, which illustrates additional detail that may be associated with a second plasma source. A plasma source 1320, such as a second plasma source as previously described, may be distributed about processing chamber 1305 via an RF ring 1322 and an electrode 1323, which may be housed by shield 1324. Electrode 1323 may be at least partially coiled about processing chamber 1305, such as around insulative section 1350. Insulative section 1350 may be composed of a variety of insulative materials including ceramics, and may be shaped to define an area within processing chamber 1305 in which a plasma may be generated. As illustrated, insulative section 1350 may be annular in shape, and may be positioned below additional metal structures or components such as plate 1352, which may further define a plasma region in which second plasma source 1320 may generate a second plasma within the processing chamber. Electrode 1323 may be coupled about insulative section 1350 one or more times to provide a coiled structure. In disclosed embodiments, multiple electrodes may be coiled about processing chamber 1305, and may at least partially overlap with one another. Accordingly, coils 1326 and 1328 may in embodiments be part of electrode 1323 or may be one or more separate electrodes from electrode 1323.

[0138] FIG. 14 shows a schematic view of a portion of a plasma coil 1400 according to the disclosed technology. As illustrated, one or more electrodes may be distributed about insulative section 1450. Insulative section 1450 may include any of the designs previously described.

Electrodes 1424, 1426, 1428, may each be powered separately by a plasma source, such as a second plasma source as previously described, and may additionally include separate outlet connections such as outlet portions 1434, 1436, for example. The electrodes may be utilized to produce an inductively coupled plasma within a processing chamber. In designs in which a single electrode is coiled about a processing chamber, the generated plasma may not have a uniform profile across the plasma area, which may be due in part to the energy distribution across the coil. However, in disclosed embodiments the inductively coupled plasma utilized with processing chambers may include at least two separate coils arranged about the processing chamber.

Disclosed embodiments may also include at least 4, 6, 8, 10, 20, etc. or more separate coils arranged about the processing chamber.

[0139] Portions of the coils may at least partially overlap one another in disclosed embodiments across a vertical cross-section of insulator section 1450, and in embodiments the coils may be specifically arranged such that the portions contacting insulative section 1450 do not overlap with a portion of any other electrode contacting a cross-sectional plane of insulative section 1450. As illustrated, each coil may include a similar shape, and may be displaced about the processing chamber from other electrodes. For example, a two-electrode design may displace each electrode by about 180° from each other about the processing chamber. As would be understood, in chamber configurations comprising geometries other than circles, a hypothetical circle may be constructed about the chamber geometry to determine relative angles and displacement may be determined from there. Additionally, a four electrode design may displace each electrode by about 90° from each other about the processing chamber. A variety of other electrode configurations and displacement angles may be readily understood from these examples, and may include similar or dissimilar degrees of displacement amongst electrodes.

[0140] FIG. 15 shows a schematic cross-sectional view of a portion of an exemplary plasma generation device 1500 according to the disclosed technology. As illustrated, plasma generation device 1500 may be coupled with a processing chamber such as with an optional top plate 1507. For example, any of the previously described chambers may be utilized with plasma generation device 1500. The plasma generation device 1500 may include a housing 1510 containing all of the generation components, as well as a nozzle 1520. Nozzle 1520 may be positioned within the plasma generation device housing, and composed of an insulative material such as a ceramic, for example, in disclosed embodiments. The nozzle may include an injection port 1530 through which one or more precursors may be delivered. An electrode 1550 may be positioned within the plasma generation device housing 1510, and coupled externally with nozzle 1520, such as coiled about a portion of nozzle 1520. In disclosed embodiments, the plasma electrode may include at least two or more separate coils arranged about the nozzle, such as previously described.

[0141] Plasma source 1540 may be coupled with electrode 1550 and utilized to generate a plasma within nozzle 1520. The plasma source 1540 may operate at any of the frequencies as previously described, and may for example operate at least at about 13.56 MHz or higher, such as 40 or 60 MHz, for example. Nozzle 1520 may include multiple portions including an upper portion 1522 and a lower portion 1524. Electrode 1550 may be coupled about one or more of the nozzle portions, and in embodiments may be coupled about upper portion 1522. Such a configuration may be utilized to obviate multiple plasma sources used with a processing chamber. Power source 1540 may be operated at a variety of frequencies to generate the requisite power for low-power operations, such as the etching operation previously described as well as high-powered operations such as the milling operation previously described. However, it may be difficult to generate an inductively coupled plasma at low-frequency, and thus in embodiments power source 1540 may be operated at high-frequency, such as at least about 13.56 MHz, but pulsed in operation in order to provide a lower density or lower power plasma. In this way, plasma generation device 1500 may be utilized successfully for plasma operations in which full ionization of precursors may not be desired. [0142] FIG. 16 shows a method 1600 of etching that may reduce film contamination or increase device throughput according to the present technology. Method 1600 may be performed in any of the systems previously described and may include optional operations including delivering a precursor for ionization to the system. Method 1600 may include striking a first plasma with a first plasma source comprising an inductively coupled plasma source in operation 1610, which may include an operating frequency previously described, and in one embodiment may be at least 13.56 or 60 MHz. The method may include creating a flux of nonreactive ions in operation 1620 such as from an ionization of the precursor being delivered which may include one or more precursors that may include argon, helium, hydrogen, nitrogen, and additional inert or reactive precursors.

[0143] The flux of nonreactive ions may be characterized by reduced bombardment of the system components based on the high-frequency electrical source utilized to produce the plasma. The flux of nonreactive ions may be delivered to a substrate housed in a processing chamber in operation 1630, and then may etch the substrate or materials on the substrate, such as with ion milling at operation 1640. The methods may include striking a second plasma at operation 1650 with a second plasma source separate from the first plasma source to create plasma effluents of a first precursor. In disclosed embodiments the second plasma source may be the same as the first plasma source, and may be operated at a different frequency or in a pulsed operation. At operation 1660, a second precursor may be delivered to the processing chamber and bypass the second plasma. The second precursor may be contacted with the plasma effluents of the first precursor to produce an etching formula at operation 1670.

[0144] An etching operation, such as a selective etching operation as previously described, may be performed with the etching formula on materials on a substrate housed within the processing chamber at operation 1680. By reducing system and chamber component bombardment, sputtering of chamber components or coatings, such as an electrode coating, may be reduced or prevented in embodiments. The sputtered particles may be carried through the system and deposited on the substrate being worked, which may result in short-circuiting or failure of the produced device. Accordingly, by utilizing the described methods increased device quality may be provided as well as increased chamber component life. Additionally, one or more of the electrodes utilized in the generation of the first plasma or second plasma may be maintained externally to the processing chamber, which may reduce degradation of the electrode due to plasma exposure.

[0145] In the preceding description, for the purposes of explanation, numerous details have been set forth in order to provide an understanding of various embodiments of the present technology. It will be apparent to one skilled in the art, however, that certain embodiments may be practiced without some of these details, or with additional details.

[0146] Having disclosed several embodiments, it will be recognized by those of skill in the art that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. Additionally, a number of well-known processes and elements have not been described in order to avoid unnecessarily obscuring the present technology. Accordingly, the above description should not be taken as limiting the scope of the technology.

[0147] Where a range of values is provided, it is understood that each intervening value, to the smallest fraction of the unit of the lower limit, unless the context clearly dictates otherwise, between the upper and lower limits of that range is also specifically disclosed. Any narrower range between any stated values or unstated intervening values in a stated range and any other stated or intervening value in that stated range is encompassed. The upper and lower limits of those smaller ranges may independently be included or excluded in the range, and each range where either, neither, or both limits are included in the smaller ranges is also encompassed within the technology, subject to any specifically excluded limit in the stated range. Where the stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0148] As used herein and in the appended claims, the singular forms "a", "an", and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, reference to "an aperture" includes a plurality of such apertures, and reference to "the plate" includes reference to one or more plates and equivalents thereof known to those skilled in the art, and so forth.

[0149] Also, the words "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and in the following claims, are intended to specify the presence of stated features, integers, components, or operations, but they do not preclude the presence or addition of one or more other features, integers, components, operations, acts, or groups.

Claims

CLAIMS:

1. A semiconductor processing system comprising:

a high-frequency electrical source including an outlet plug;

a processing chamber having a top plate; and

an inlet assembly coupled with the top plate and comprising:

an electrode defining an aperture at a first end and configured to receive the outlet plug, wherein the aperture is characterized at the first end by a first diameter, and wherein a second end of the aperture opposite the first end is characterized by a second diameter less than the first diameter, and

an inlet insulator coupled with the top plate and configured to electrically insulate the top plate from the electrode.

2. The semiconductor processing system of claim 1, wherein the inlet insulator defines an insulator opening, wherein the semiconductor processing system further comprises a nozzle positioned at least partially within the insulator opening, and wherein the nozzle defines a channel extending through the nozzle.

3. The semiconductor processing system of claim 1 , wherein the semiconductor processing system further comprises an ignition rod having a first surface, wherein the ignition rod is positioned between the electrode and the nozzle, and wherein at least a portion of the ignition rod extends into the channel defined by the nozzle.

4. The semiconductor processing system of claim 3, wherein the ignition rod defines an ignition opening extending into the first surface, wherein the ignition rod defines a ledge within the ignition opening, and wherein the electrode is located at least partially within the ignition opening and seated on the ledge.

5. The semiconductor processing system of claim 3, wherein the semiconductor processing system further comprises an RF insulator coupled with the first surface of the ignition rod.

6. The semiconductor processing system of claim 5, wherein at least a portion of the electrode extends above the RF insulator.

7. The semiconductor processing system of claim 1 , wherein the semiconductor processing system further comprises a showerhead.

8. The semiconductor processing system of claim 7, wherein at least a portion of the showerhead is silicon.

9. The semiconductor processing system of claim 7, wherein at least a portion of the showerhead is coated with a treatment material.

10. The semiconductor processing system of claim 9, wherein the treatment material is selected from the group consisting of silicon and a ceramic.

11. The semiconductor processing system of claim 1 , wherein the high- frequency electrical source is configured to operate at a frequency of at least about 13.56 MHz.

12. The semiconductor processing system of claim 11, wherein the high- frequency electrical source is configured to operate at a frequency of at least about 60 MHz.

13. A semiconductor processing system comprising :

a processing chamber having a top plate;

a high-frequency electrical source;

an electrode positioned between the processing chamber and the high-frequency electrical source;

an ignition rod at least partially housing the electrode;

an RF insulator positioned between the ignition rod and the high-frequency electrical source;

a nozzle defining an aperture through which at least a portion of the ignition rod extends;

an inlet insulator housing the nozzle, and coupled with the top plate to electrically insulate the top plate from the electrode; and

an RF shield encompassing at least a portion of the ignition rod, the nozzle, and the inlet insulator.

14. The semiconductor processing system of claim 13, further comprising a gas distribution baffle and a showerhead.

15. An etching method, the method comprising:

striking a plasma with a high-frequency electrical source;

creating a flux of non-reactive ions;

delivering the ions to a substrate; and

etching materials on the substrate.