WO2016088916A1 - Light-emitting diode member and module satisfying spectrum characteristics for illuminating art works - Google Patents
Light-emitting diode member and module satisfying spectrum characteristics for illuminating art works Download PDFInfo
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- WO2016088916A1 WO2016088916A1 PCT/KR2014/011803 KR2014011803W WO2016088916A1 WO 2016088916 A1 WO2016088916 A1 WO 2016088916A1 KR 2014011803 W KR2014011803 W KR 2014011803W WO 2016088916 A1 WO2016088916 A1 WO 2016088916A1
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- the present invention relates to a light emitting diode device and module that satisfies the spectral characteristics for art lighting, and more particularly to a light emitting diode device and module for art lighting that can reduce the blue spike in the 450nm wavelength range and can achieve a color temperature index of 3500K level It is about.
- a phosphor is coated on a surface of a semiconductor light emitting device (LED Chip), and phosphor powder is contained in a resin constituting the LED light emitting device. Containing the weight%, it is practical to obtain a light emission color other than the original blue light emission color, for example, white light emission.
- the GaN type semiconductor light emitting element whose center wavelength emits blue light (blue spike) of 460 nm vicinity.
- the problem to be solved by the present invention is to provide a light emitting diode device and module that satisfies the spectral characteristics for art lighting, which can be used for art lighting, such as a museum by reducing blue spikes in the 450nm wavelength band.
- the present invention provides a light emitting diode device that satisfies the spectral characteristics for art lighting, the light emitting diode chip having a light emission peak in the wavelength range of 350 nm ⁇ 410 nm; And a light emitting unit provided on the light emitting diode chip and excited by light irradiated from the light emitting diode chip, wherein the following five kinds of phosphors are dispersed in a silicone resin.
- the fifth phosphor which can be excited in the wavelength range of 350 nm to 410 nm, and has a peak wavelength of the main emission peak of 660 nm to 730 nm.
- the light emitting diode chip, GaN-based crystal layer laminated on the sapphire substrate with the irregularities formed on the surface And a light emitting layer provided on the GaN-based crystal layer, and the light emitting wavelength of the light emitting diode chip has an emission peak in a wavelength range of 350 nm to 410 nm.
- the present invention also provides a light emitting diode module comprising the light emitting diode device described above.
- a semiconductor chip that emits near violet light and absorbs near ultraviolet light
- the blue light emitting phosphor emitting blue light
- the green light emitting phosphor emitting green light
- red light Five kinds of light-emitting red phosphors are mixed in a predetermined blending ratio, and daylight filters are applied to halogen lamps by absorbing red regions from yellow light with halogen lamp emission wavelengths by obtaining color stability and high color rendering index of white light emission. It is more economical than the method of inserting the tones to obtain a color tone close to natural light or sunlight.
- the light emitting diode module is characterized in that the form selected from the group consisting of SMD form, LAMP form and COB form.
- the light emitting diode according to the present invention has a high color rendering index and light efficiency, and can suppress spikes and IR light components in a blue region. Therefore, the white light emitting diode according to the present invention can solve the problem of the conventional white light emitting diode, that is, the problem such as emulsified dye deterioration due to the blue spike of 450-460nm, can satisfy the spectral characteristics for art lighting.
- 1 is a graph showing the emission spectrum conditions required for art lighting, the range of the LED emission spectrum proposed by the present invention is limited to 400nm ⁇ 700nm.
- the present invention is a light emitting chip with a wavelength range of 400nm as described above, a light emitting diode device having a color temperature index of 3500K, satisfying the requirements as defined in Figure 1 from 400nm to 700nm, and satisfies the spectral characteristics for art lighting; Provide a module.
- the present invention uses a light emitting diode chip having a light emitting peak in the wavelength range of 350 nm to 410 nm as a basic light emitting chip, and is excited by light emitted from the light emitting diode chip provided on the light emitting diode chip,
- the following five kinds of phosphors include a light emitting part dispersed in a silicone resin.
- 2 is an example of emission spectrum analysis when a daylight filter is mounted on a conventional halogen lamp.
- FIG. 3 it can be seen that it still contains a very large blue spike, which does not satisfy the art product lighting condition shown in FIG. 1. Since the blue spikes deteriorate the dye of a work of art, a conventional white light emitting diode equipped with a daylight filter on the halogen lamp cannot be used in a place such as an art gallery.
- the present invention in order to solve the above-mentioned problems of the prior art, while using the light emitting diode chip having a light emission peak in the wavelength range of 350 nm to 410 nm by using the above-mentioned first to fifth phosphor at the same compounding ratio
- the present invention provides a light emitting diode satisfying the emission spectrum condition of FIG. 1 and a module including the same.
- the phosphors are formulated in the same weight ratio, but can be freely selected within the range of 0.1 to 0.9 according to the desired conditions, all belong to the scope of the present invention.
- a light emitting diode capable of excitation in the wavelength range of 350 nm to 410 nm and emitting 400 nm at the main wavelength by using a fifth phosphor having a peak wavelength of the main emission peak of 660 nm to 730 nm
- the color temperature index can be increased to 3500K and there are no blue spikes. Therefore, without using a conventional light emitting diode of 450 nm band, using a light emitting diode having a light emission peak in the wavelength range of 350 nm to 410 nm and five kinds of phosphors having peak wavelengths of different main emission peaks, Fig. 1
- a light emitting diode for lighting an artwork corresponding to the emission spectrum of the conditions shown in the following may be provided.
- the white light emitting diode according to the present invention can solve the problem of the conventional white light emitting diode, that is, the problem such as deterioration of the emulsion dye due to the blue spike of 450-460nm, it is possible to satisfy the spectral characteristics for art lighting.
- the light emitting diode according to the present invention is applied to light emitting diode elements and modules satisfying the spectral characteristics for art lighting, there is industrial applicability.
Abstract
Provided is a light-emitting diode member satisfying spectrum characteristics for illuminating art works, the light-emitting diode member being characterized by comprising: a light-emitting diode chip having a light-emitting peak in the wavelength range of 350-410 nm; and a light-emitting unit provided on the light-emitting diode chip to be activated by light irradiated therefrom, and having four types of fluorescent substances changing wavelengths in blue, green, red and yellow regions dispersed in silicone resin.
Description
본 발명은 미술 조명용 스펙트럼 특성을 만족하는 발광 다이오드 소자 및 모듈에 관한 것으로, 보다 상세하게는 450nm 파장대의 청색 스파이크를 감소시키며 아울러 3500K 수준의 색온도 지수를 달성할 수 있는 미술 조명용 발광 다이오드 소자 및 모듈에 관한 것이다. The present invention relates to a light emitting diode device and module that satisfies the spectral characteristics for art lighting, and more particularly to a light emitting diode device and module for art lighting that can reduce the blue spike in the 450nm wavelength range and can achieve a color temperature index of 3500K level It is about.
최근 들어 반도체 발광소자를 이용한 LED (Light Emitting Diode) 소자의 조명장치의 실용화 기술로서, 반도체 발광소자 (LED Chip)의 표면에 형광체를 도포하고, LED 발광소자를 구성하는 수지 중에 형광체 분말을 소정의 중량% 함유 시키며, 반도체 발광소자 본래의 청색 발광색 이외의 발광색, 예를 들면 백색 발광을 얻는 것이 실용화되고 있다. 종래의 조명 장치에는 중심파장이 460 nm 부근의 청색을 발광하는(청색 스파이크) GaN 계 반도체 발광소자를 이용하는 것이 일반적이었다. 그러나 이러한 백색 LED는 스펙트럼 분석을 해보면 청색광을 많이 포함하고 있어서 색 안정성과 연색성 향상 등 광학특성 개선의 여지가 있다. 특히 450-460nm의 청색 스파이크는 유화의 염료 등을 변질시켜 미술관 조명으로 사용하지 못하는 문제가 있으며, 아울러 도 1에서 도시한 바와 같이 400nm 수준의 발광 칩을 이용하여 우수한 연색지수와 3,500K ㅁ 500K의 색온도지수를 동시에 만족하는 기술은 개시되지 못한 상황이다. Recently, as a practical technology for the lighting device of an LED (Light Emitting Diode) device using a semiconductor light emitting device, a phosphor is coated on a surface of a semiconductor light emitting device (LED Chip), and phosphor powder is contained in a resin constituting the LED light emitting device. Containing the weight%, it is practical to obtain a light emission color other than the original blue light emission color, for example, white light emission. In the conventional lighting apparatus, it was common to use the GaN type semiconductor light emitting element whose center wavelength emits blue light (blue spike) of 460 nm vicinity. However, these white LEDs contain a lot of blue light when subjected to spectral analysis, and thus there is room for improvement of optical characteristics such as color stability and color rendering. In particular, the blue spike of 450-460nm is a problem that can not be used as lighting for art museums by changing the dye of the oil painting, and also as shown in Figure 1 using a 400nm light emitting chip excellent color rendering index and 3,500K ㅁ 500K The technology that satisfies the color temperature index at the same time has not been disclosed.
따라서, 본 발명이 해결하고자 하는 과제는 450nm 파장대의 청색 스파이크를 감소시켜 미술관과 같이 미술 조명용으로 사용할 수 있는, 미술 조명용 스펙트럼 특성을 만족하는 발광 다이오드 소자 및 모듈을 제공하는 것이다.Accordingly, the problem to be solved by the present invention is to provide a light emitting diode device and module that satisfies the spectral characteristics for art lighting, which can be used for art lighting, such as a museum by reducing blue spikes in the 450nm wavelength band.
상기 과제를 해결하기 위하여, 본 발명은 미술 조명용 스펙트럼 특성을 만족하는 발광 다이오드 소자로서, 350 nm ~ 410 nm의 파장 범위의 발광피크를 가지는 발광 다이오드 칩; 및 상기 발광 다이오드 칩 상에 구비되어 상기 발광 다이오드 칩으로부터 조사되는 빛에 의하여 여기되며, 하기 5 종류의 형광체가 실리콘 수지에 분산된 발광부를 포함하는 것을 특징으로 하는 발광 다이오드 소자를 제공한다.In order to solve the above problems, the present invention provides a light emitting diode device that satisfies the spectral characteristics for art lighting, the light emitting diode chip having a light emission peak in the wavelength range of 350 nm ~ 410 nm; And a light emitting unit provided on the light emitting diode chip and excited by light irradiated from the light emitting diode chip, wherein the following five kinds of phosphors are dispersed in a silicone resin.
- 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 450 nm ~ 470 nm인 제 1 형광체A first phosphor capable of excitation in the wavelength range of 350 nm to 410 nm and having a peak wavelength of the main emission peak of 450 nm to 470 nm
- 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 510 nm ~ 550 nm인 제 2 형광체A second phosphor capable of excitation in the wavelength range of 350 nm to 410 nm and having a peak wavelength of the main emission peak of 510 nm to 550 nm
- 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 630 nm ~ 660 nm인 제 3 형광체A third phosphor capable of excitation in the wavelength range of 350 nm to 410 nm and having a peak wavelength of the main emission peak of 630 nm to 660 nm
- 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 550 nm ~ 590 nm인 제 4 형광체A fourth phosphor capable of excitation in the wavelength range of 350 nm to 410 nm and having a peak wavelength of the main emission peak of 550 nm to 590 nm
350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 660 nm ~ 730 nm인 제 5 형광체.The fifth phosphor, which can be excited in the wavelength range of 350 nm to 410 nm, and has a peak wavelength of the main emission peak of 660 nm to 730 nm.
본 발명의 일 실시예에서, 상기 발광 다이오드 칩은, 표면에 요철이 형성된 사파이어 기판상에 적층된 GaN 계 결정층; 및 상기 GaN 계 결정층 상에 구비된 발광층의 구조를 가지며, 상기 발광 다이오드 칩의 발광파장은 350 nm ~ 410 nm의 파장 범위의 발광 피크를 갖는다. In one embodiment of the present invention, the light emitting diode chip, GaN-based crystal layer laminated on the sapphire substrate with the irregularities formed on the surface; And a light emitting layer provided on the GaN-based crystal layer, and the light emitting wavelength of the light emitting diode chip has an emission peak in a wavelength range of 350 nm to 410 nm.
본 발명은 또한 상술한 발광 다이오드 소자를 포함하는 발광 다이오드 모듈을 제공한다. The present invention also provides a light emitting diode module comprising the light emitting diode device described above.
본 발명의 일 실시예에서, 근 자색광을을 발광하는 반도체소자 (LED Chip)를 이용하고 근자외선을 흡수해 청색 빛을 발광하는 청색 발광 형광체, 녹색 빛을 발광하는 녹색 발광 형광체, 적색 빛을 발광하는 적색 발광 형광체를 포함하는 5 종류를 소정 배합 비율에 혼합하며, 백색 발광의 색 안정성 및 고연색지수를 얻는 방법으로 할로겐 램프에 주광 필터 (할로겐 램프 발광파장으로 황색빛으로부터 적색 영역을 흡수)를 삽입해 자연광 또는 태양광에 근사하는 색조를 얻을 수 있는 방법에 비하여 경제성이 우수하다. In one embodiment of the present invention, using a semiconductor chip (LED Chip) that emits near violet light and absorbs near ultraviolet light, the blue light emitting phosphor emitting blue light, the green light emitting phosphor emitting green light, red light Five kinds of light-emitting red phosphors are mixed in a predetermined blending ratio, and daylight filters are applied to halogen lamps by absorbing red regions from yellow light with halogen lamp emission wavelengths by obtaining color stability and high color rendering index of white light emission. It is more economical than the method of inserting the tones to obtain a color tone close to natural light or sunlight.
본 발명의 일 실시예에서, 상기 발광 다이오드 모듈은 SMD 형태, LAMP 형태 및 COB 형태로 구성된 군으로부터 선택된 형태인 것을 특징으로 한다. In one embodiment of the present invention, the light emitting diode module is characterized in that the form selected from the group consisting of SMD form, LAMP form and COB form.
본 발명에 따른 발광 다이오드는, 높은 연색지수와 광효율을 가지며, 청색 영역에서의 스파이크와 IR 광성분을 억제시킬 수 있다. 따라서, 본 발명에 따른 백색 발광 다이오드는, 종래의 백색 발광 다이오드가 가지는 문제, 즉, 450-460nm의 청색 스파이크에 의한 유화 염료 변질 등의 문제를 해결하여, 미술 조명용 스펙트럼 특성을 만족시킬 수 있다. The light emitting diode according to the present invention has a high color rendering index and light efficiency, and can suppress spikes and IR light components in a blue region. Therefore, the white light emitting diode according to the present invention can solve the problem of the conventional white light emitting diode, that is, the problem such as emulsified dye deterioration due to the blue spike of 450-460nm, can satisfy the spectral characteristics for art lighting.
도 1은 미술품 조명용으로 요구되는 발광 스펙트럼 조건을 나타내는 그래프로서 본 발명에서 제안하는 LED 발광 스팩트럼의 범위는 400nm~ 700nm 까지로 한정 한다. 1 is a graph showing the emission spectrum conditions required for art lighting, the range of the LED emission spectrum proposed by the present invention is limited to 400nm ~ 700nm.
도 2는 기존의 할로겐 램프에 주광 필터를 장착한 경우의 발광 스펙트럼(적색) 과 450nm 청색광 여기백색 LED 스팩트럼 광(청색)의 비교 분석의 예이다. 2 is an example of a comparative analysis of an emission spectrum (red) and 450 nm blue light excitation white LED spectrum light (blue) when a conventional daylight filter is mounted on a conventional halogen lamp.
도 3은 청색광 여기 백색 LED의 스펙트럼 분석 결과이다. 3 is a spectrum analysis result of a blue light excited white LED.
도 4는 본 발명의 일 실시예 에 따라 상술한 5종류의 형광체를 동일 비율로 배합한 발광 다이오드의 발광 스펙트럼 분석 결과이다. 4 is a light emission spectrum analysis result of a light emitting diode in which the above five kinds of phosphors are blended in the same ratio according to an embodiment of the present invention.
이하, 본 발명의 바람직한 실시예에 대하여 상세히 설명한다. Hereinafter, preferred embodiments of the present invention will be described in detail.
본 발명은 상술한 바와 같이 400nm 파장대의 발광 칩으로, 3500K의 색온도지수를 가지며, 도 1에서 400nm~ 700nm 까지로 한정한 바와 같은 요구조건을 만족하는, 미술 조명용 스펙트럼 특성을 만족하는 발광 다이오드 소자 및 모듈을 제공한다. The present invention is a light emitting chip with a wavelength range of 400nm as described above, a light emitting diode device having a color temperature index of 3500K, satisfying the requirements as defined in Figure 1 from 400nm to 700nm, and satisfies the spectral characteristics for art lighting; Provide a module.
이를 위하여 본 발명은 350 nm ~ 410 nm의 파장 범위의 발광피크를 가지는 발광 다이오드 칩을 기본 발광 칩으로 사용하고, 상기 발광 다이오드 칩 상에 구비되어 상기 발광 다이오드 칩으로부터 조사되는 빛에 의하여 여기되며, 하기 5 종류의 형광체가 실리콘 수지에 분산된 발광부를 포함하는 것을 특징으로 하는 발광 다이오드 소자를 제공한다. To this end, the present invention uses a light emitting diode chip having a light emitting peak in the wavelength range of 350 nm to 410 nm as a basic light emitting chip, and is excited by light emitted from the light emitting diode chip provided on the light emitting diode chip, The following five kinds of phosphors include a light emitting part dispersed in a silicone resin.
- 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 450 nm ~ 470 nm인 제 1 형광체A first phosphor capable of excitation in the wavelength range of 350 nm to 410 nm and having a peak wavelength of the main emission peak of 450 nm to 470 nm
- 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 510 nm ~ 550 nm인 제 2 형광체A second phosphor capable of excitation in the wavelength range of 350 nm to 410 nm and having a peak wavelength of the main emission peak of 510 nm to 550 nm
- 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 630 nm ~ 660 nm인 제 3 형광체A third phosphor capable of excitation in the wavelength range of 350 nm to 410 nm and having a peak wavelength of the main emission peak of 630 nm to 660 nm
- 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 550 nm ~ 590 nm인 제 4 형광체A fourth phosphor capable of excitation in the wavelength range of 350 nm to 410 nm and having a peak wavelength of the main emission peak of 550 nm to 590 nm
- 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 660 nm ~ 730 nm인 제 5 형광체.A fifth phosphor capable of excitation in the wavelength range of 350 nm to 410 nm and having a peak wavelength of the main emission peak of 660 nm to 730 nm.
도 2는 기존의 할로겐 램프에 주광 필터를 장착한 경우의 발광 스펙트럼 분석의 예이다. 2 is an example of emission spectrum analysis when a daylight filter is mounted on a conventional halogen lamp.
도 2를 참조하면, 700nm 파장 이후의 IR 성분이 제거되었고 또한 청색 스파이크(blue spike) 역시 제거 되었음을 알 수 있다. Referring to FIG. 2, it can be seen that the IR component after the 700 nm wavelength has been removed and also the blue spike has been removed .
도 3은 청색광 여기 백색 LED의 스펙트럼 분석 결과이다. 3 is a spectrum analysis result of a blue light excited white LED.
도 3을 참조하면, 여전히 매우 큰 청색 스파이크(blue spike)를 포함하고 있음을 알 수 있으며, 이는 도 1에서 도시된 미술제품 조명조건을 만족하지 못한다. 상기 청색 스파이크는 미술 작품의 염료를 변질시키므로, 상기 할로겐 램프에 주광 필터를 장착한 종래 백색 발광 다이오드는 미술관과 같은 장소에서는 사용하지 못하는 문제가 있다. Referring to FIG. 3, it can be seen that it still contains a very large blue spike, which does not satisfy the art product lighting condition shown in FIG. 1. Since the blue spikes deteriorate the dye of a work of art, a conventional white light emitting diode equipped with a daylight filter on the halogen lamp cannot be used in a place such as an art gallery.
하지만, 본 발명은 상술한 종래 기술의 문제를 해결하기 위하여, 상술한 제 1 내지 제 5 형광체를 동시에 소정 배합비로 사용하여 350 nm ~ 410 nm의 파장 범위의 발광피크를 가지는 발광 다이오드 칩을 사용하면서도, 도 1의 발광 스펙트럼 조건을 만족하는 발광 다이오드와 이를 포함하는 모듈을 제공한다. 본 발명의 일 실시예에서 상기 형광체는 동일 중량비로 배합되었으나, 원하는 조건에 따라 0.1 내지 0.9 범위 내에서 자유로이 선택될 수 있으며, 이는 모두 본 발명의 범위에 속한다. However, the present invention, in order to solve the above-mentioned problems of the prior art, while using the light emitting diode chip having a light emission peak in the wavelength range of 350 nm to 410 nm by using the above-mentioned first to fifth phosphor at the same compounding ratio The present invention provides a light emitting diode satisfying the emission spectrum condition of FIG. 1 and a module including the same. In one embodiment of the present invention, the phosphors are formulated in the same weight ratio, but can be freely selected within the range of 0.1 to 0.9 according to the desired conditions, all belong to the scope of the present invention.
도 4는 본 발명의 일 실시예에 따라 상술한 5종류의 형광체를 동일 비율로 배합한 발광 다이오드의 발광 스펙트럼 분석 결과이다. 4 is a light emission spectrum analysis result of a light emitting diode in which the above five kinds of phosphors are blended in the same ratio according to one embodiment of the present invention.
도 4를 참조하면, 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 660 nm ~ 730 nm인 제 5 형광체 사용에 의하여, 400 nm를 주 파장대로 발광하는 발광 다이오드 칩에서도 색온도지수는 3500K까지 증가할 수 있으며, 청색 스파이크가 전혀 없는 것을 알 수 있다. 따라서, 종래의 450nm 대의 발광다이오드를 사용하지 않고서도, 350 nm ~ 410 nm의 파장 범위의 발광피크를 가지는 발광 다이오드와, 상이한 주 발광 피크의 피크 파장을 갖는 5 종류의 형광체를 사용하여, 도 1에 도시된 조건의 발광 스펙트럼에 대응하는 미술품 조명용 발광 다이오드가 제공될 수 있다. Referring to FIG. 4, a light emitting diode capable of excitation in the wavelength range of 350 nm to 410 nm and emitting 400 nm at the main wavelength by using a fifth phosphor having a peak wavelength of the main emission peak of 660 nm to 730 nm On the chip, the color temperature index can be increased to 3500K and there are no blue spikes. Therefore, without using a conventional light emitting diode of 450 nm band, using a light emitting diode having a light emission peak in the wavelength range of 350 nm to 410 nm and five kinds of phosphors having peak wavelengths of different main emission peaks, Fig. 1 A light emitting diode for lighting an artwork corresponding to the emission spectrum of the conditions shown in the following may be provided.
특히 본 발명에 따른 백색 발광 다이오드는, 종래의 백색 발광 다이오드가 가지는 문제, 즉, 450-460nm의 청색 스파이크에 의한 유화 염료 변질 등의 문제를 해결하여, 미술 조명용 스펙트럼 특성을 만족시킬 수 있다. In particular, the white light emitting diode according to the present invention can solve the problem of the conventional white light emitting diode, that is, the problem such as deterioration of the emulsion dye due to the blue spike of 450-460nm, it is possible to satisfy the spectral characteristics for art lighting.
이상과 같이 본 발명은 비록 한정된 실시예에 의해 설명되었으나, 본 발명이 상기의 실시예에 한정되는 것은 아니며, 이는 본 발명이 속하는 분야에서 통상의 지식을 가진 자라면 이러한 기재로부터 다양한 수정 및 변형이 가능하다. 따라서, 본 발명의 사상은 아래에 기재된 특허청구범위에 의해서만 파악되어야 하고, 이와 균등하거나 또는 등가적인 변형 모두는 본 발명 사상의 범주에 속한다 할 것이다. As described above, although the present invention has been described by way of limited embodiments, the present invention is not limited to the above-described embodiments, which can be variously modified and modified by those skilled in the art to which the present invention pertains. It is possible. Accordingly, the spirit of the invention should be understood only by the claims set forth below, and all equivalent or equivalent modifications will fall within the scope of the invention.
본 발명에 따른 발광 다이오드는 미술 조명용 스펙트럼 특성을 만족하는 발광 다이오드 소자 및 모듈에 적용되므로, 산업상 이용가능성이 있다. Since the light emitting diode according to the present invention is applied to light emitting diode elements and modules satisfying the spectral characteristics for art lighting, there is industrial applicability.
Claims (3)
- 미술 조명용 스펙트럼 특성을 만족하는 발광 다이오드 소자로서, As a light emitting diode device satisfying the spectral characteristics for art lighting,350 nm ~ 410 nm의 파장 범위의 발광피크를 가지는 발광 다이오드 칩; 및A light emitting diode chip having a light emitting peak in a wavelength range of 350 nm to 410 nm; And상기 발광 다이오드 칩 상에 구비되어 상기 발광 다이오드 칩으로부터 조사되는 빛에 의하여 여기되며, 하기 5 종류의 형광체가 실리콘 수지에 분산된 발광부를 포함하는 것을 특징으로 하는 발광 다이오드 소자.And a light emitting part provided on the light emitting diode chip and excited by light irradiated from the light emitting diode chip, wherein five kinds of phosphors are dispersed in a silicone resin.- 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 450 nm ~ 470 nm인 제 1 형광체A first phosphor capable of excitation in the wavelength range of 350 nm to 410 nm and having a peak wavelength of the main emission peak of 450 nm to 470 nm- 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 510 nm ~ 550 nm인 제 2 형광체A second phosphor capable of excitation in the wavelength range of 350 nm to 410 nm and having a peak wavelength of the main emission peak of 510 nm to 550 nm- 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 630 nm ~ 660 nm인 제 3 형광체A third phosphor capable of excitation in the wavelength range of 350 nm to 410 nm and having a peak wavelength of the main emission peak of 630 nm to 660 nm- 350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 550 nm ~ 590 nm인 제 4 형광체A fourth phosphor capable of excitation in the wavelength range of 350 nm to 410 nm and having a peak wavelength of the main emission peak of 550 nm to 590 nm350 nm ~ 410 nm의 파장 범위에서 여기가 가능하고, 주 발광 피크의 피크 파장이 660 nm ~ 730 nm인 제 5 형광체.The fifth phosphor, which can be excited in the wavelength range of 350 nm to 410 nm, and has a peak wavelength of the main emission peak of 660 nm to 730 nm.
- 제 1항에 있어서, The method of claim 1,상기 발광 다이오드 칩은, The light emitting diode chip,표면에 요철이 형성된 사파이어 기판상에 적층된 GaN 계 결정층; 및 A GaN-based crystal layer laminated on a sapphire substrate having irregularities formed on a surface thereof; And상기 GaN 계 결정층 상에 구비된 발광층의 구조를 가지며, 상기 발광 다이오드 칩의 발광파장은 350 nm ~ 410 nm의 파장 범위의 발광 피크를 가지는 것을 특징으로 하는 백색 발광 다이오드 소자.The light emitting layer has a structure of the light emitting layer provided on the GaN-based crystal layer, the light emitting wavelength of the light emitting diode chip has a light emission peak in the wavelength range of 350 nm ~ 410 nm.
- 제 1항 또는 제 2항에 따른 발광 다이오드 소자를 포함하는 발광 다이오드 모듈.A light emitting diode module comprising the light emitting diode device according to claim 1.
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| US6084250A (en) * | 1997-03-03 | 2000-07-04 | U.S. Philips Corporation | White light emitting diode |
| KR20090096543A (en) * | 2007-02-09 | 2009-09-10 | 가부시끼가이샤 도시바 | White light-emitting lamp and illuminating device using the same |
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