WO2017162584A1

WO2017162584A1 - Optoelectronic component and method for operating an optoelectronic component

Info

Publication number: WO2017162584A1
Application number: PCT/EP2017/056551
Authority: WO
Inventors: Andreas Rausch; Dominik Pentlehner
Original assignee: Osram Oled Gmbh
Priority date: 2016-03-21
Filing date: 2017-03-20
Publication date: 2017-09-28
Also published as: DE102016105205A1

Abstract

The invention relates to an optoelectronic component (1) comprising a substrate (3), a first electrode layer (5), an active layer sequence (7), a second electrode layer (9), and a protective layer (11) which are arranged on a surface (4) of the substrate (3) in a stack direction (V). The optoelectronic component (1) has a first operating state (Z1) and a second operating state (Z2). At least one dimension (d2) of the optoelectronic component (1) in the second operating state (Z2) differs from the corresponding dimension (d1) in the first operating state (Z1). The optoelectronic component (1) is designed to emit an electromagnetic radiation (S1) with a first emission wavelength (L1) in the first operating state (Z1) and an electromagnetic radiation (S2) with a second emission wavelength (L2) in the second operating state (Z2), said second emission wavelength differing from the first emission wavelength (L1) in a specified manner.

Description

description

Optoelectronic component and method for operating an optoelectronic component

This patent application claims the priority of German Patent Application 10 2006 105 205.1, the disclosure of which is hereby incorporated by reference. The invention relates to an optoelectronic component and to a corresponding method for operating an optoelectronic component which are suitable for different, simple and cost-effective methods

Emission colors of the optoelectronic device to

enable.

According to a first aspect, an optoelectronic component comprises a first operating state and a second operating state, wherein at least one dimension of the optoelectronic component in the second operating state is of the corresponding dimension in the first operating state

Operating status is different. The optoelectronic

Component is designed to be in the first

Operating state, an electromagnetic radiation having a first emission wavelength and in the second

Operational state to emit electromagnetic radiation having a second emission wavelength, which differs from the first emission wavelength in a predetermined manner

differentiates.

In this way, an optoelectronic component can be realized, which has a simple structure and is inexpensive to produce and a color changeable Emission of the exiting electromagnetic radiation allows. The optoelectronic component has at least two predetermined operating states, between which the emission wavelength of the respective electromagnetic

Radiation is continuously or discretely tunable. Such a controlled color change of the output radiation is by means of simple mechanical deformation of the

optoelectronic component or at least the

can be realized light-emitting layer, so that the at least one dimension of the optoelectronic component in predetermined operating conditions different predetermined.

With regard to the first or second operating state, in the further description the respective electromagnetic radiation is optionally also referred to as first or second

electromagnetic radiation of the optoelectronic

Designated component. The emission wavelength of the electromagnetic radiation may in particular be a characteristic wavelength, such as a

Dominant wavelength or a peak wavelength, the radiation emitted by the optoelectronic device radiation.

The optoelectronic component extends in a vertical direction between a first and second

Main plane, wherein the vertical direction can extend transversely or perpendicular to the first and / or second main plane. The vertical direction may also be referred to as the stacking direction in which the respective layers of the

Optoelectronic component are arranged on each other.

For example, the main levels can be a

Top surface and a bottom surface of the optoelectronic

Act element. At the bottom surface and / or the Top surface may be a radiation passage area of the optoelectronic component. The

The optoelectronic component is extended substantially flat at least in places at least in places parallel to the main planes and has a thickness in the vertical direction that is small compared to a maximum

Extension of the optoelectronic component in the lateral direction. The optoelectronic component may, for example, be a light-emitting diode, in particular an organic light-emitting diode (OLED).

In at least one embodiment according to the first aspect, the optoelectronic component has a substrate. The substrate is suitable as a carrier layer for supporting a layer stack which is disposed on a surface of the substrate

Substrate is arranged. The substrate has a surface opposite to this surface, which

for example, the bottom surface of the optoelectronic

Component forms.

The substrate is formed, for example, as a mechanically supporting structure of the optoelectronic component and realized as a glass substrate containing or consisting of a glass, or as a polymer substrate containing or consisting of a plastic such as a polymer. The substrate may in particular be formed milky transparent or clear transparent. Furthermore, the substrate may be flexible and in a predetermined manner mechanically reversibly deformable or rigid.

In particular, the substrate may be a metal foil, a

Plastic film and / or a thin glass contain or consist of one of these films, for example polyimide films. In at least one embodiment according to the first aspect, the optoelectronic component has a first electrode layer in the stacking direction on the surface of the substrate. The first electrode layer can be considered as electrically

conductive layer may be formed of or consist of a metal and / or an oxide. The first

Electrode layer is then formed in terms of their material to realize a predetermined electrical conductivity in an operation. The first electrode layer can, for example, by means of a physical

Vapor Deposition (PVD) process can be applied to the substrate. The first

Electrode layer covered after this step, at least a part of the surface of the substrate, which faces away from the bottom surface of the optoelectronic device.

The first electrode layer is transparent, for example. In particular, the first electrode layer may comprise a transparent, conductive oxide (transparent conductive oxide). Transparent, conductive oxides are generally metal oxides, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO). The optoelectronic component can then be, for example, a so-called "bottom emitter OLED" or a transparent OLED Alternatively or additionally, the first electrode layer comprises, for example

Nanowire structures. For example, the first one

Electrode layer in this connection graphs on. In at least one embodiment according to the first aspect, the optoelectronic component has an active

Layer sequence for the generation of electromagnetic

Radiation on, on the first electrode layer is applied. The active layer sequence can be applied, for example, by means of so-called inline evaporators in a physical vapor deposition (PVD) process. Alternatively or additionally, the application of the active layer sequence can also be effected by means of

Printing done. In particular, the active layer sequence covers a surface of the first electrode layer, which faces away from the bottom surface of the substrate. The layer sequence is designed to generate electromagnetic radiation in an operation of the optoelectronic component, in particular in one or more active regions. In this case, the active layer sequence can in particular produce colored light having a predetermined wavelength or within a predetermined wavelength range. The layer sequence includes, for example, organic

functional layers. The optoelectronic component can then be, in particular, an organic light-emitting diode.

In at least one embodiment according to the first aspect, the optoelectronic component has a second one

Electrode layer, which is applied to the active layer sequence. In particular, the second is

Electrode layer applied such that the second

Electrode layer is arranged without contact to the first electrode layer. The second electrode layer may be referred to as

be formed electrically conductive layer of electrically conductive material or consist thereof. The second

Electrode layer may also be formed transparent. By way of example, the second electrode layer can be applied to the active layer sequence analogously to the first electrode layer by means of a physical vapor deposition process be upset. In particular, the second electrode layer covers a surface of the active layer sequence, which faces away from the bottom surface of the substrate and of the optoelectronic component.

In at least one embodiment according to the first aspect, with respect to the stacking direction of the optoelectronic component, a protective layer is on the second

Electrode layer arranged. Such a protective layer may be formed as a particle trapping layer to the underlying layers before arriving particles

protect. The protective layer may be formed one or more layers. It is advantageous in terms of their material properties designed so that impinging

Particles can not penetrate the protective layer and can not reach the area of the underlying layers. In particular, the protective layer covers a surface of the second electrode layer, which faces away from the bottom surface of the substrate. In at least one embodiment according to the first aspect, the optoelectronic component comprises a substrate and a first electrode layer, which is arranged in a stacking direction on a surface of the substrate. The

Optoelectronic component further comprises an active

Layer sequence for the generation of electromagnetic

Radiation having an emission wavelength which is in

Stacking direction is arranged on the first electrode layer. The optoelectronic component further comprises a second electrode layer, which in the stacking direction on the

Layer sequence is arranged. In addition, this includes

optoelectronic component a protective layer, which in

Stacking direction is arranged on the second electrode layer. The optoelectronic component has a first

Operating state and a second operating state, wherein at least one dimension of the optoelectronic

Device in the second operating state of the

corresponding dimension in the first operating state. The optoelectronic component is designed to be in the first operating state

electromagnetic radiation with a first

Emission wavelength and in the second operating state, an electromagnetic radiation with a second

Emission wavelength to be emitted, which differs from the first emission wavelength in a predetermined manner. By means of such an optoelectronic component can be in a simple and straightforward way, the spectral

Properties of the emitting electromagnetic radiation are selectively influenced to allow a desired color change of the emitting light. It is a finding within the scope of the invention that the emission color of the optoelectronic component or the

Emission wavelength of the emitting electromagnetic radiation is dependent on the at least one dimension of the optoelectronic component. This effect can be used to easily create a desired one

Color change of the electromagnetic radiation to be achieved by the optoelectronic device is offset by means of controlled mechanical force from the first to the second operating state. The at least one dimension represents, for example, a geometric one

Expansion in lateral or vertical direction within the active layer sequence. A given force causes a controlled and mechanical deformation of the Optoelectronic device, which is particularly reversible, so that a bidirectional change of the operating state is possible. The at least one dimension, which is influenced in a targeted manner by means of mechanical force, can be described as

microscopic or macroscopic

Dimension be realized. A microscopic dimension is, for example, the intermolecular distance of interacting emitter centers within the active layer sequence

realized, which can decisively influence the color emission of the electromagnetic output radiation. In addition, the change correlates to a microscopic one

Dimension due to a significant mechanical

Force on the optoelectronic device with a change in a macroscopic dimension of the

Component, which, for example, represents an outer, geometric dimension and therefore easier to see or be measured. In this case, a change of the at least one dimension is always such that a

detectable or detectable change in the

Emission wavelength between the first and the second operating state of the optoelectronic component

is trained in a controlled manner.

The optoelectronic component described thus makes possible a color tunability of the exiting electromagnetic radiation without requiring a complex construction with special architectures of existing layers. It can also be a complicated electronic control of individual components or layers of the

Optoelectronic device can be omitted, which for example, in a color mixture with a red, a green and a blue emitting layer is required.

The first operating state of the optoelectronic component represents, for example, a ground state of

optoelectronic component, in which no significant force is exerted on the optoelectronic component. The second operating state then represents the

For example, a state of the optoelectronic component in which at one or more positions a mechanical

Force on the optoelectronic device

is present, so that the second emission wavelength of the second electromagnetic radiation in a predetermined manner from the first emission wavelength of the

electromagnetic radiation of the ground state

different. In this case, the predetermined force on the optoelectronic device is large enough to a

cause noticeable change in the emission wavelength, without the operability of the optoelectronic

To endanger the component.

Alternatively, the first operating state is a state of the optoelectronic component in which a certain mechanical force also acts on the optoelectronic component

Component is present, so that the second operating state realizes a state in which a deviating mechanical force is exerted and the at least one dimension and the first and second

Distinguish emission wavelength in a predetermined manner. Optionally, such operation of the optoelectronic device is beneficial to starting from a

Fundamental radiation a desired first electromagnetic Radiation and deviating form a second electromagnetic radiation.

The optoelectronic component thus realizes a low-cost option for tunability of the

Emission wavelength of the outgoing electromagnetic radiation. Thus can on an employment additional

transparent and non-transparent components as well as a use of switchable spectral filters or mirrors are omitted in order to change the color of the

Emission wavelength of the electromagnetic radiation bring about. The described optoelectronic component is therefore time-saving and inexpensive to produce and allows a variety of applications.

For example, such a variable color

optoelectronic component can be used as a signal display for illuminating objects in order to achieve a desired optical effect. In at least one embodiment according to the first aspect, at least the active layer sequence is mechanically reversibly deformable. In addition, other layers, such as the substrate, the two electrode layers and / or the protective layer may be mechanically reversible deformable.

Advantageously, the optoelectronic component as a whole is mechanically reversible deformable and realized, for example, a flexible, color tunable OLED.

However, the other layers can also be rigid and flexible to only a small extent.

In one embodiment of the optoelectronic component, for example, individual layers can have a predetermined

Have material or a predetermined structure, so that they are relatively rigid and mechanical Force without significant deformation to more

Pass on layers. For example, only the light-emitting active layer sequence in a predetermined range is flexible and mechanically reversibly deformable

formed so that by means of vertical pressure the

optoelectronic component is compressed and in the second operating state light with the second

Emission wavelength in the red spectral region, while emitting in the first non-compressed operating state light having the first emission wavelength in the green spectral range.

The described optoelectronic component thus realizes a combination of ductility and color change due to mechanical deformation, so that no

additional materials or structures are required to change the emission color and a reversible change in the emission color cost-effectively and easily

can be realized.

In this context, it is pointed out that the optoelectronic component is designed so that the mechanical deformation caused by the action of force and the change in the emission wavelength are reversible and a normal operation of the optoelectronic component

Realize the device. Such, controlled

introduced mechanical deformation does not affect

essential to the life of the optoelectronic

Component off.

In at least one embodiment according to the first aspect, the active layer sequence is vertically elongated and / or

compressible. In this way, mechanical deformation of the optoelectronic component is possible, for example, in Stacking direction is performed by a vertical pressure or train is applied to the optoelectronic device. In this case, the predetermined force can be performed by one or both sides of the optoelectronic component.

In at least one embodiment according to the first aspect, at least the active layer sequence is laterally expandable and / or compressible. As an alternative or in addition to the vertical force action described above, controlled mechanical deformation can also take place laterally

Direction to be carried out.

Such a mechanical force action takes place, for example, in the essential plane of extent of the optoelectronic component and can analogously to the previously described

Embodiment by means of one, two or more pages

exerted pressure or train on the optoelectronic

Component can be effected.

In at least one embodiment according to the first aspect, the at least one dimension of the optoelectronic component in the second operating state as a result of a mechanical deformation is different from the corresponding dimension of the optoelectronic component in the first operating state. In this context will be on it

It is pointed out that the first and second operating states of the optoelectronic component differ at least with regard to the at least one dimension, which has an effect on the emission and the electromagnetic radiation.

As a result of a predetermined mechanical deformation, the at least one dimension is selectively influenced and the optoelectronic component is stretched or predetermined compressed and thus a desired color change of

Emission wavelength induced.

A mechanical deformation of the optoelectronic

Component is particularly controlled in this way

brought about that in the comparison of the first and second operating state, a certain difference of the at least one dimension and thereby a recognizable color change between the first and second emission wavelength

is trained. Random fluctuations in the

Emission wavelength or other influences that lead to an insignificant change in the emission wavelength of the output radiation of the optoelectronic device are not to be regarded as a controlled color change introduced by predetermined mechanical deformation.

In at least one embodiment according to the first aspect, the active layer sequence has at least one organic functional layer. The described optoelectronic component thus enables a simple and cost-effective realization of a color-changeable OLED.

In at least one embodiment according to the first aspect, the active layer sequence comprises an emitter material, wherein the at least one dimension is an intermolecular distance between the molecules of the emitter material, and there is an association between emission wavelength and the intermolecular distance. Especially such

Emitter materials are for the described

optoelectronic component suitable.

The emitter materials are introduced, for example, in the extensible and / or compressible active layer sequence and allow a reliable adaptation of the

Emission wavelength by controlled mechanical

Force. Due to such a mechanical

Deformation, the distance between the emitters is changed, which is accompanied by a targeted change in the emission color. In this context, the optoelectronic component is formed so that the mechanical deformation and color change of the emission wavelength are reversible, so that after release of the mechanical force, the initial state, which is represented for example by the first operating state, is restored.

As emitter materials are in particular materials

suitable, their emission properties not by isolated monomeric molecules, but by intermolecular

Interactions are determined. An example of such

Emitter materials are square-planar platinum (II) complexes which, in terms of their orbital structure, have dlO bond axial interactions through overlap

Unoccupied dz2 orbitals can enter.

In at least one embodiment according to the first aspect, the emitter material in the active layer sequence is embedded in a matrix. Such a structure of the optoelectronic component can relatively easily by means of mechanical

Force effect can be influenced and allows a reliable and homogeneous emission and a desired color change of the electromagnetic radiation. For example, a given emitter material is in a stretchable one

Polymer matrix arranged in the active layer sequence.

In at least one embodiment according to the first aspect, the active layer sequence comprises platinum complexes (Pt (II) - Complexes) with a given substituent, in particular platinum isonitrile complexes (Pt (CN) ₂ (CNR) ₂ ) and / or

Tetracyanoplatinate ([Pt (CN) ₄ ] ^{2 ~} ). The default

Substituent is an organic radical of each

As a result of their orbital structure, these emitter materials or substance classes are particularly suitable for use in the optoelectronic component and enable a simple and cost-effective manner

reliable color change by means of mechanical deformation.

The emission of the specified emitter materials is related to platinum-platinum interactions, so that ultimately the color or wavelength of the emission and the electromagnetic radiation of the optoelectronic

Component depends on the distance of the metal centers. An increase in the distance, for example by means of vertical and / or lateral strain, leads to a redshift of the emission wavelength. Accordingly, a relaxation or a reduction of the distance between the leads

interacting emitter centers, for example by means of vertical and / or lateral compression, to a

Blue shift of the electromagnetic radiation. The

Emitter materials can both be doped in one

Polymer matrix be present as well as covalently bound to this.

An electromagnetic fundamental radiation or output radiation of the optoelectronic component in a ground state in which no mechanical deformation is formed is essentially determined by the size and structure of the organic radical or of the substituent. Of the

Substituent defines the at least one dimension of the Optoelectronic device as intermolecular distance between the interacting molecules of the emitter material and thus determines the fundamental wavelength of

optoelectronic component. In this way, by appropriate choice of the substituent, a base emission color of the optoelectronic component can be specified. In addition, a concentration of the embedded emitter on the emission wavelength of the

electromagnetic output radiation.

According to a second aspect, a method for

Operating an optoelectronic device controlling an emission wavelength of an electromagnetic

Radiation of an optoelectronic component by means of mechanical force on the optoelectronic

Component. Starting from a first operating state of the optoelectronic component in which it is designed, an electromagnetic radiation with a first

Emissive emission wavelength, a second operating state of the optoelectronic component is formed by mechanical deformation, in which it is adapted to an electromagnetic radiation with a second

Emission wavelength to be emitted, which differs from the first emission wavelength in a predetermined manner. By means of the described method is in particular an operation of the optoelectronic described above

Component possible, so that all for the

Optoelectronic component disclosed properties and features also for the method of operating the

Optoelectronic device are disclosed and vice versa.

In at least one embodiment according to the second aspect, the emission wavelength of the optoelectronic Device in an operation by means of lateral and / or vertical stretching and / or compression controlled at least the active layer sequence with respect to a stacking direction. In at least one embodiment according to the second aspect, the emission wavelength of the optoelectronic

Controlled by means of mechanical force such that the first emission wavelength for the human eye distinguishable from the second

Emission wavelength is. This development of the method realizes a driving of the optoelectronic component, so that a color change of the emitting electromagnetic radiation is visible to the human eye. For example, the fundamental radiation or the first electromagnetic radiation is emitted in the first operating state of the optoelectronic component in the red spectral range. Then, by means of vertical and / or lateral force a predetermined mechanical

Deformation of the active layer sequence generated, so that the optoelectronic component emits the second electromagnetic radiation in the second operating state, for example in the green spectral range. Consequently, a difference between the first and second emission wavelengths is recognizable to the human eye. Such

Significant change in emission wavelength can be beneficial, among other things, to signal display

to point out and make them reliably recognizable. However, such a difference does not have to

inevitably extend over one or more hundred nanometers of the emission wavelength. In at least one embodiment according to the second aspect, the first electromagnetic radiation and the second electromagnetic radiation each represent one

electromagnetic radiation in the optically visible range of from 400 nm to 800 nm inclusive.

The optoelectronic component is in particular configured to realize a visible to the human color change, for example, a reliable

Enable signal display, which is continuously tunable within the optically visible range. For example, depending on a selected substituent, the optoelectronic component is configured in such a way that it emits light in the blue spectral range at 450 nm in a ground state and / or first initial state. By means of external force, the optoelectronic component can be mechanically deformed such that the emission wavelength of the electromagnetic radiation is continuously tuned and, for example, a second operating state in the green or red spectral range is set at 550 nm or 700 nm. In order to realize such a tunability, the described optoelectronic component is such

formed, that in particular the light-emitting

Layer sequence has a given geometry and elasticity or flexibility, so that a

Reliable and reversible changing of the emission wavelength due to mechanical deformation over the entire optically visible range is possible. The wavelength range which can be tuned by means of the described optoelectronic component can in particular extend from 400 nm to 800 nm inclusive. There are limits of a reversible tunable Wavelength range among others dependent on one

Concentration of emitters used, the molecular structure within active layer sequence, which are determined in particular by respective organic substituents, and the structure or arrangement of the emitter, for example in a matrix. In addition, the possible

Wavelength range also limited by the permissible mechanical force, which allows a reliable and reversible deformation of the optoelectronic device and changing the emission wavelength.

Further features, embodiments and expediencies will become apparent from the following description of

Embodiments in conjunction with the figures. Show it :

FIG. 1 shows an exemplary embodiment of a schematic structure of an optoelectronic component,

Figure 2 is a schematic structure of an active

Layer sequence of the optoelectronic component,

FIG. 3 shows a graphical relationship between

Emission wavelength of the optoelectronic

Device and intermolecular distance for different material combinations,

4 shows an embodiment of a first and a

second operating state of the optoelectronic component, Figure 5 shows another embodiment of a first and a second operating state of

optoelectronic component. Identical, similar or equivalent elements are indicated in the figures with the same reference numerals. The figures and the proportions of the elements shown in the figures with each other are not as

to scale. Rather, individual elements and in particular layer thicknesses can be exaggerated for better representability and / or better understanding

be shown.

With reference to the following figures 1 to 4, a

described optoelectronic component 1, which has a straightforward structure and is inexpensive to produce and allows a controlled color variable emission of an escaping electromagnetic radiation. In this case, the optoelectronic component 1 has at least two predetermined operating states ZI and Z2, between which the emission wavelength LI, L2 of the respective

electromagnetic radiation Sl, S2 is continuously or discretely tunable. Such a controlled

Color change of the electromagnetic radiation S can be realized by means of simple mechanical deformation of the optoelectronic component 1, so that at least one

Dimension d of the optoelectronic component 1 in FIG

different operating conditions predetermined. FIG. 1 shows, in a schematic side view, an optoelectronic component 1 which has a substrate 3 with a bearing surface 4. Related to one

Stacking direction V is on the surface 4 a first Electrode layer 5, an active layer sequence 7 for

Generation of electromagnetic radiation with a

Emission wavelength L and a second electrode layer 9 is arranged. In addition, a protective layer 11 is arranged on the second electrode layer 9, which is designed in particular as an encapsulation to protect the underlying layers 5, 7 and 9 from foreign particles. The substrate 3 is thus suitable as a carrier layer to carry a layer stack.

The optoelectronic component 1 extends in a vertical direction between a first and second

Main plane, wherein the vertical direction is transverse or perpendicular to the first and / or second main plane and substantially corresponds to the stacking direction V, in which the respective layers of the optoelectronic component 1 are arranged one above the other. The main planes can be, for example, a top surface and a bottom surface of the optoelectronic component 1. The bottom surface and / or the top surface may be a

Radiation passage surface of the optoelectronic

Act element 1. The optoelectronic component 1 may, for example, be a light-emitting diode,

in particular to act an organic light emitting diode (OLED).

The substrate 3 is, for example, a glass or polymer substrate. Furthermore, the substrate 3 may be flexible and a metal foil, a

Plastic film and / or a thin glass or consist of one of these films (for example, polyimide films).

The electrode layers 5 and 9 comprise, for example, a conductive oxide, metal or metal oxide, such as Example aluminum, silver or indium tin oxide. The

Electrode layers 5 and 9 may also include alloys, such as an AgMg alloy. The

Electrode layers 5 and 9 form cathode and anode for the electrical contacting of the optoelectronic

Component 1.

The first electrode layer 5 is particularly transparent. By way of example, the first electrode layer 5 in this context is formed from indium tin oxide (ITO). In other exemplary embodiments, the first electrode layer 5 is, for example, thin

Metal layers, metallic network structures or graphene. The optoelectronic component 1 further comprises, for example, electrical contact feeds, which may be transparent or non-transparent. For example, the electrical contact feeds and / or the second

Electrode layer 9 of one of the following materials or consists of: molybdenum / aluminum (Mo / Al), molybdenum (Mo), chromium / aluminum / chromium (Cr / Al / Cr), silver / magnesium (Ag / Mg), aluminum (Al ).

The active layer sequence 7 comprises, for example, organic semiconductor material, which is designed, in particular, as organic functional layers for emission of electromagnetic radiation and for the supply of charge carriers. The optoelectronic component 1 is, in particular, an organic light-emitting diode chip with an active region provided for generating electromagnetic radiation (not explicitly shown in the figures for the purpose of simplified illustration). The layer sequence 7 is designed mechanically reversible deformable, so that the layer sequence 7 is by means of force, for example by means of vertical and / or lateral pressure or train, expandable and compressible and depending on the emission wavelength L of the optoelectronic component 1 can be influenced.

The optoelectronic component 1 can further

Insulator layers, for example, polyimide, which are arranged between the two electrode layers 5 and 9. In other embodiments may be applied to the

Insulator layers are omitted, for example, with appropriate mask processes, so as to ensure that the first and second electrode layers 5 and 9

are arranged contactless to each other.

FIG. 2 shows a schematic view

Embodiment of the active layer sequence 7, which comprises an emitter material which emits electromagnetic radiation having a predetermined emission wavelength L as a function of intermolecular interactions. Of the

The structure illustrated essentially illustrates this

Basic Principle of Emission of Stacked Platinum (Pt) -

Compounds which are suitable in particular as emitter materials for the described optoelectronic component 1. The illustrated in Figure 2 schematic structure of

Layer sequence 7 represents, for example, one

Basic state of the optoelectronic component 1, in which no force is present, and the

optoelectronic component 1 in an operation a

electromagnetic radiation S with a

Emission wavelength L0 emitted.

The emission color or emission wavelength L0 is essentially determined by the intermolecular distance of the interacting Pt centers, which was previously described at least one dimension d corresponds. This intermolecular distance d in turn depends on the structure and size of a substituent R, which has a

represents organic substituents of the emitter molecule and, for example, by means of carbon and

Nitrogen bonds coupled with the Pt centers. In this way, the emission wavelength LO of the

electromagnetic radiation by means of the choice of

Substituents R are specified (see Figure 3). As a rule, the larger or bulkier the substituent R, the greater the intermolecular distance d of adjacent Pt centers relative to one another. By means of strain or compression, the intermolecular distance d between the interacting Pt centers can be controlled and thus the

Emission wavelength L of the optoelectronic component 1 can be varied.

The emitter material is formed, for example, as a square planar Pt (I I) complex, which due to its

Orbital structure allows a distance-dependent emission. Due to hybridization of the z orbitals (along the dashed line), the Pt centers form a linear

Orbital chain, which determines the emission color of the electromagnetic radiation S. In addition, there are others

Emitter materials, such as Pt-isonitrile complexes (Pt (CN) 2 (CNR) 2) or Tetracyanoplatinate ([Pt (CN) ₄ ] ^{2 ~} ), for a configuration of color variable optoelectronic device 1 possible. As an alternative to platinum, others can

Elements, such as palladium, are provided, which allow a distance-dependent emission of electromagnetic radiation. FIG. 3 illustrates a graphical relationship between the emission wavelength L of different emitter materials and substituents R (Pt (CN) 2 (CNR) 2 bonds) in FIG

Dependence of the intermolecular distance d of interacting Pt centers according to the publication DE 20061030860 A1, the disclosure content of which is hereby included in the present description.

Example Bl represents an emitter material having a Pt-Pt distance d of about 3.558 angstroms, which in an associated ground state is an electromagnetic

Fundamental radiation S with an emission wavelength L0 in the blue spectral range at about 460 nm. Example B2 represents an emitter molecule according to the empirical formula

Pt (CN) (CH ₃ NO ₂ ) with an emission wavelength L0 of about 485 nm at an intermolecular distance d of about 3.475

Angstroms. Example B3 gives an emitter molecule of

Composition Pt (CN) 2 (n-butyl-NC) 2 with a Pt-Pt distance d of about 3.4005 angstroms, which allows a fundamental electromagnetic radiation S with an emission wavelength L0 of about 510 nm in the green spectral range.

Example B4 represents an emitter molecule according to the

Molar formula Pt (CN) 2 (α-methylbenzylNC) 2 with a

intermolecular Pt distance d of about 3.3915 angstroms and an emission wavelength L0 of 530 nm. Example B5

illustrates a ground state of an emitter molecule

PT (CN) 2 (t-butylNC) 2 with a Pt-Pt distance d of about 3.342 angstroms and an emission wavelength L0 of about 545 nm. Example B6 represents an emitter molecule according to the empirical formula Pt (CN) 2 (t-PropylNC) 2 with an intermolecular Pt distance d of about 3.27 angstroms and a

Emission wavelength L0 of just under 600 nm. The illustrated curve is essentially a linear dependence of the emission wavelength L or

Emission wavelength L LO of the ground state of

Emitter material from the inverse, cubic distance d ^{~ 3} to remove. By appropriate choice of an emitter material, the electromagnetic radiation S with a desired emission wavelength LO can thus be predetermined in a ground state of the optoelectronic component 1, from which the emission wavelength L can be increased and reduced by means of mechanical deformation.

FIG. 4 shows an exemplary embodiment of the optoelectronic component 1 in a first operating state ZI and a second operating state Z2. The first operating state ZI represents, for example, the ground state of the

Optoelectronic component 1, in which no predetermined force is applied to the optoelectronic component 1. On the other hand, the second operating state Z2 represents a state of the optoelectronic component 1, in which at one or more positions a force acting on the

Optoelectronic component 1 is present, so that at least the active layer sequence 7 mechanically deformed and a change in the emission wavelength L is effected. In the illustrated embodiment, laterally or vertically from two opposite sides a respective force Fl and F2 is exerted on the layer sequence 7, which compresses them and reduces the intermolecular distance d between the emitter molecules. In the first

Operating state ZI, the optoelectronic component 1 is capable of emitting an electromagnetic radiation Sl having a first emission wavelength LI. Here, the Pt-Pt distance along the essential Direction of interaction (dashed line) with dl

specified. This intermolecular distance dl in the first operating state ZI is formed larger than the

corresponding distance d2 in the compressed second

Operating state Z2 of the optoelectronic component 1. In this simple manner, by means of controlled pressure and compression of the optoelectronic component 1, the

Emission color of the exiting electromagnetic radiation can be changed predetermined.

Figure 5 illustrates an inverse to that in Figure 4

Embodiment in which the first operating state ZI of the optoelectronic component 1 presents a state in which the intermolecular distance dl is made smaller than the corresponding distance d2 in the second

Operating status Z2. By means of mechanical tension, the active layer sequence 7 can be stretched and deformed in a predetermined manner so that a desired change in the emission color is realized. Also in this embodiment, a second-side attacking force Fl and F2 is shown, which may be the same size or different in magnitude. Similarly, a one- or multi-sided, lateral

and / or vertical force possible to a

desired expansion and / or compression of the optoelectronic component 1 or at least the active layer sequence 7 to achieve. It may be useful to do that

Optoelectronic device 1 in one direction to stretch and compress in another direction to realize a desired change in the emission wavelength LI in the first operating state ZI toward the emission wavelength L2 in the second operating state Z2. In particular, one or more layers 3, 5, 9, and / or 11 or the optoelectronic component 1 as

Entire mechanically reversible deformable and allow in a simple and cost-effective manner, a reversible change in the emission wavelength L.

The optoelectronic component 1 is configured, for example, as a stretchable and compressible OLED

flexible plastic substrate 3, which is coated by wet-chemical methods with expandable polymer layers. Also the electrode and protection respectively

Encapsulation layers can be mechanically deformable

be designed. By means of the described optoelectronic component 1 is a simple and reliable way a color

Tunability of the electromagnetic radiation S

feasible, without requiring a complex structure with special architectures existing layers or a complicated electronic control of individual components. The optoelectronic component 1 is therefore time-saving and inexpensive to produce and allows, for example, a signal display or illumination of objects with color-changing optical effects.

The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly described in the claims

Claims or embodiments is given. Reference sign list

I optoelectronic component

3 substrate

5 first electrode layer

7 layer sequence

9 second electrode layer

10 thin-layer encapsulation

II protective layer

B (i) Examples of a material composition

d distance of interacting molecular centers

dl distance of interacting molecular centers in a first operating state

d2 distance of interacting molecular centers in a second

Operating condition

L emission wavelength of the electromagnetic radiation of the optoelectronic component

L0 emission wavelength of the electromagnetic

Basic radiation of the optoelectronic component without

force

LI emission wavelength of the (first) electromagnetic

Radiation of the optoelectronic component in a first state

L2 emission wavelength of the (second) electromagnetic radiation of the optoelectronic component in a second state

R substituent / organic radical

S electromagnetic radiation without force

51 (first) electromagnetic radiation in the first

Operating condition

52 (second) electromagnetic radiation in the second operating state V stacking direction

ZI first operating state of the optoelectronic component

Z2 second operating state of the optoelectronic component

Claims

Optoelectronic component (1) comprising:

a substrate (3);

- A first electrode layer (5), which in a

Stacking direction (V) on a surface (4) of the

Substrate (3) is arranged;

- An active layer sequence (7) for generating electromagnetic radiation with a

Emission wavelength (L) disposed on the first electrode layer (5) in the stacking direction (V);

a second electrode layer (9), which in

Stacking direction (V) on the layer sequence (7) is arranged; and

a protective layer (11) which is arranged in the stacking direction (V) on the second electrode layer (9), wherein the optoelectronic component (1) has a first

Operating state (ZI) and a second operating state

(Z2), wherein at least one dimension (d2) of the optoelectronic component (1) in the second operating state (Z2) of the corresponding dimension

(dl) in the first operating state (ZI) differs, and wherein the optoelectronic component (1) is adapted to, in the first operating state (ZI) electromagnetic radiation (Sl) with a first

Emission wavelength (LI) and in the second

Operating state (Z2) electromagnetic radiation (S2) with a second emission wavelength (L2) too

emit, differing from the first emission wavelength

(LI) differs in a predetermined manner.

Optoelectronic component (1) according to claim 1, in which at least the active layer sequence (7)

is mechanically reversible deformable.

Optoelectronic component (1) according to claim 2, wherein at least the active layer sequence (7) is vertically stretchable and / or compressible.

Optoelectronic component (1) according to claim 2 or 3,

in which at least the active layer sequence (7) is laterally expandable and / or compressible.

Optoelectronic component (1) according to one of

Claims 1 to 4,

wherein the at least one dimension (d2) of the

optoelectronic component (1) in the second

Operating state (Z2) due to a mechanical deformation of the corresponding dimension (dl) of the optoelectronic component (1) in the first

Operating status (ZI) is different.

Optoelectronic component (1) according to one of

Claims 1 to 5,

in which the active layer sequence (7) has at least one organic functional layer.

Optoelectronic component (1) according to one of

Claims 1 to 6,

in which the active layer sequence (7) a

Emitter material, wherein the at least one dimension (d) is an intermolecular distance between molecules of the emitter material, and the Emission wavelength (L) of the intermolecular

Distance depends.

Optoelectronic component (1) according to claim 7, wherein the emitter material in the active

Layer sequence (7) is embedded in a matrix.

Optoelectronic component (1) according to one of

Claims 1 to 8,

in which the active layer sequence (7) has platinum complexes with a given substituent (R), in particular platinum-isonitrile complexes and / or tetracyanoplatinates.

Method for operating an optoelectronic

Component (1) comprising:

Controlling an emission wavelength (L) of one

electromagnetic radiation of an optoelectronic component (1) by means of a mechanical force acting on the optoelectronic component (1) starting from a first operating state (ZI) of the optoelectronic component

Device (1) in which it is adapted to electromagnetic radiation (Sl) with a first

Emissive emission wavelength (LI) to a second operating state (Z2) of the optoelectronic component (1) in which it is designed to emit electromagnetic radiation (S2) having a second emission wavelength (L2) which differs from the first emission wavelength (LI). LI) in a predetermined manner.

Method according to claim 10, where the emission wavelength (L) of the

Optoelectronic device (1) with respect to a stacking direction (V) by means of lateral and / or vertical stretching or compression of the active layer sequence (7) is controlled.

12. The method according to claim 10 or 11,

where the emission wavelength (L) of the

Optoelectronic device (1) is controlled by means of mechanical force such that the first emission wavelength (LI) for the human eye is distinguishable from the second emission wavelength (L2).

13. The method according to any one of claims 10 to 12,

wherein the electromagnetic radiation (Sl) of the first operating state (ZI) and the electromagnetic

Radiation (S2) of the second operating state (Z2) each electromagnetic radiation in the optically visible

Range of including 400 nm to 800 nm inclusive.

14. The method according to any one of claims 10 to 13,

wherein the optoelectronic component (1) according to one of claims 1 to 9 is formed.