A method of producing a semiconductor integrated circuit device in which a bipolar element and a MOS element are produced on a same chip, which includes forming an oxide film on the epitaxial regions of the device; depositing a silicon film on the device over epitaxial regions and forming a base electrode...http://www.google.fr/patents/US4772567?utm_source=gb-gplus-shareBrevet US4772567 - Method of producing a semiconductor integrated circuit BI-MOS device
Method of producing a semiconductor integrated circuit BI-MOS device
