The use of atomic layer deposition (ALD) to form a nanolaminate layered dielectric layer of cerium oxide and aluminum oxide acting as a single dielectric layer with a ratio of approximately two to one between the cerium oxide and the aluminum oxide, and a method of fabricating such a dielectric layer...http://www.google.fr/patents/US20060177975?utm_source=gb-gplus-shareBrevet US20060177975 - Atomic layer deposition of CeO2/Al2O3 films as gate dielectrics
Atomic layer deposition of CeO2/Al2O3 films as gate dielectrics
Numéro de demande: 11/055,380 Numéro de publication: US 2006/0177975 A1 Date de dépôt: 10 févr. 2005 Brevet délivré: US7374964 ( Date de délivrance 20 mai 2008)
