Processing problems associated with porous low-k dielectric materials are often severe. Exposure of low-k materials to plasma during feature etching, ashing, and priming steps has deleterious consequences. For porous, silicon-based low-k dielectric materials, the plasma depletes a surface organic group,...http://www.google.fr/patents/US20040072436?utm_source=gb-gplus-shareBrevet US20040072436 - Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
Replenishment of surface carbon and surface passivation of low-k porous ...
Numéro de demande: 10/268,132 Numéro de publication: US 2004/0072436 A1 Date de dépôt: 9 oct. 2002 Brevet délivré: US7005390 ( Date de délivrance 28 févr. 2006)
