Flash memory devices include a memory array having a plurality of NAND strings of EEPROM cells therein. A word line driver is provided to improve programming efficiency. The word line driver is electrically coupled to the memory array by a plurality of word lines. The word line driver includes a plurality...http://www.google.fr/patents/US20090262582?utm_source=gb-gplus-shareBrevet US20090262582 - Method of Programming Flash Memory Device
Numéro de demande: 12/489,641 Numéro de publication: US 2009/0262582 A1 Date de dépôt: 23 juin 2009 Brevet délivré: US7911850 ( Date de délivrance 22 mars 2011)
