A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (CoFe/Ni)x, (Co/NiFe)x, (Co/NiCo)x, (CoFe/NiFe)x,...http://www.google.fr/patents/US8184411?utm_source=gb-gplus-shareBrevet US8184411 - MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application
MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic ...
