A semiconductor device and its manufacture method wherein the semiconductor substrate has first and second insulating films, the first insulating film being an insulating film other than a silicon nitride film formed at least on a side wall of a conductive pattern including at least one layer of metal...http://www.google.fr/patents/US6818993?utm_source=gb-gplus-shareBrevet US6818993 - Insulation structure for wiring which is suitable for self-aligned contact and multilevel wiring
Insulation structure for wiring which is suitable for self-aligned contact ...
