When an active matrix display device using a thin film transistor as a switching element in the displaying portion or driving portion is characterized in that said thin film transistor comprises an insulating substrate on which a gate electrode, a gate insulating film, a semiconductor layer, a drain...http://www.google.fr/patents/US20020145143?utm_source=gb-gplus-shareBrevet US20020145143 - Active matrix display device
Numéro de demande: 09/940,885 Numéro de publication: US 2002/0145143 A1 Date de dépôt: 29 août 2001 Brevet délivré: US7145176 ( Date de délivrance 5 déc. 2006)
