In a gate structure of a non-volatile memory device is formed, a tunnel insulating layer and a charge trapping layer are formed on a substrate. A composite dielectric layer is formed on the charge trapping layer and has a laminate structure in which first material layers including aluminum oxide and...http://www.google.fr/patents/US20060220106?utm_source=gb-gplus-shareBrevet US20060220106 - Gate structures of a non-volatile memory device and methods of manufacturing the same
Gate structures of a non-volatile memory device and methods of manufacturing ...
Numéro de demande: 11/375,762 Numéro de publication: US 2006/0220106 A1 Date de dépôt: 15 mars 2006 Brevet délivré: US7646056 ( Date de délivrance 12 janv. 2010)
