A method of forming a gate electrode of a semiconductor device includes forming a damascene pattern for fabricating a metal electrode on an upper part of a poly silicon gate so as to prevent a metal electrode from being oxidized when the poly silicon electrode and the metal electrode are formed simultaneously....http://www.google.fr/patents/US7332421?utm_source=gb-gplus-shareBrevet US7332421 - Method of fabricating gate electrode of semiconductor device
Method of fabricating gate electrode of semiconductor device
