Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly...http://www.google.fr/patents/US20070103986?utm_source=gb-gplus-shareBrevet US20070103986 - COMPENSATING FOR COUPLING DURING READ OPERATIONS OF NON-VOLATILE MEMORY
COMPENSATING FOR COUPLING DURING READ OPERATIONS OF NON-VOLATILE MEMORY
Numéro de demande: 11/616,745 Numéro de publication: US 2007/0103986 A1 Date de dépôt: 27 déc. 2006 Brevet délivré: US7315477 ( Date de délivrance 1 janv. 2008)
