Methods of forming a microelectronic structure are described. Embodiments of those methods include placing an anisotropic conductive layer comprising at least one compliant conductive sphere on at least one interconnect structure disposed on a first substrate, applying pressure to contact the compliant...http://www.google.fr/patents/US7507604?utm_source=gb-gplus-shareBrevet US7507604 - Breakable interconnects and structures formed thereby
Breakable interconnects and structures formed thereby
