Disclosed is a method of forming a capacitor for a semiconductor memory device according to the present invention. The method includes the steps of: forming a lower electrode on a semiconductor substrate; performing a surface-treatment process to prevent a natural oxide layer from generating on the surface...http://www.google.fr/patents/US6316307?utm_source=gb-gplus-shareBrevet US6316307 - Method of forming a capacitor for a semiconductor memory device
Method of forming a capacitor for a semiconductor memory device
