A technology capable of improving a charge retention characteristic of a nonvolatile memory is provided. In a memory cell in which an interlayer insulating film formed of an ONO film obtained by laminating a lower silicon oxide film, a silicon nitride film, and an upper silicon oxide film is formed between...http://www.google.fr/patents/US7692233?utm_source=gb-gplus-shareBrevet US7692233 - Semiconductor device and manufacturing method thereof
Semiconductor device and manufacturing method thereof
