A MRAM structure is described that has a dedicated data storage layer formed between first and second electrodes and a dedicated data sensing layer between second and third electrodes to enable separate read and write functions. A diode between the storage layer and first electrode allows a heating current...http://www.google.fr/patents/US7978505?utm_source=gb-gplus-shareBrevet US7978505 - Heat assisted switching and separated read-write MRAM
Heat assisted switching and separated read-write MRAM
