A semiconductor device is provided wherein carrier flows in a monocrystal silicon film having low oxygen concentration. As for a structure of the semiconductor device, a single semiconductor element or a plurality of semiconductor elements are provided on the monocrystal silicon film having low oxygen...http://www.google.fr/patents/US6100570?utm_source=gb-gplus-shareBrevet US6100570 - Semiconductor device having a semiconductor film of low oxygen concentration
Semiconductor device having a semiconductor film of low oxygen concentration
