A semiconductor device and method having shallow trench isolation. A pad oxide 24 and silicon 42 are formed on a substrate 20 to form a mask, and the pad oxide 24/silicon 42 mask is then patterned. Portions of the pad oxide 24/silicon 42 mask and the substrate 20 are removed to form trenches 22 in the...http://www.google.fr/patents/US6054343?utm_source=gb-gplus-shareBrevet US6054343 - Nitride trench fill process for increasing shallow trench isolation (STI) robustness
Nitride trench fill process for increasing shallow trench isolation (STI ...
