A method for manufacturing a III-V Group compound or a II-VI Group compound semiconductor element by VPE, comprising the step of annealing a grown compound at 400.degree. C. or higher, or irradiating electron beam the grown compound at 600.degree. C. or higher....http://www.google.fr/patents/US5306662?utm_source=gb-gplus-shareBrevet US5306662 - Method of manufacturing P-type compound semiconductor
Method of manufacturing P-type compound semiconductor
