A semiconductor device includes a semiconductor substrate; an insulation film provided on the semiconductor substrate; and an electrode provided on the insulation film, and containing boron and a semiconductor material, wherein at least one element of the group V and carbon is introduced into an interface...http://www.google.fr/patents/US20060278940?utm_source=gb-gplus-shareBrevet US20060278940 - Semiconductor device and manufacturing method thereof
Semiconductor device and manufacturing method thereof
Numéro de demande: 11/287,192 Numéro de publication: US 2006/0278940 A1 Date de dépôt: 28 nov. 2005 Brevet délivré: US7586163 ( Date de délivrance 8 sept. 2009)
