SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is ≦20 nm in thickness, has an HF density of ≦0.1/cm2, and a surface roughness of 0.2 nm RMS....http://www.google.fr/patents/US7417297?utm_source=gb-gplus-shareBrevet US7417297 - Film or layer of semiconducting material, and process for producing the film or layer
Film or layer of semiconducting material, and process for producing the film ...
