A memory cell including a substrate, at least one deep trench capacitor in the substrate, at least one FET in the substrate disposed over at least a portion of the at least one deep trench capacitor, and at least one isolation region in the substrate surrounding the at least one FET and having...http://www.google.fr/patents/US5831301?utm_source=gb-gplus-shareBrevet US5831301 - Trench storage dram cell including a step transfer device
Trench storage dram cell including a step transfer device
