The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed...http://www.google.fr/patents/US20100065877?utm_source=gb-gplus-shareBrevet US20100065877 - SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY
Numéro de demande: 12/624,106 Numéro de publication: US 2010/0065877 A1 Date de dépôt: 23 nov. 2009 Brevet délivré: US8071994 ( Date de délivrance 6 déc. 2011)
