In a semiconductor memory device, when positive high voltages are respectively applied to a control gate(20) and a drain region(14) and a source region(13) is grounded, hot electrons are produced in the boundary between the drain region(14) and a channel region. The hot electrons are injected into a...http://www.google.fr/patents/US5396458?utm_source=gb-gplus-shareBrevet US5396458 - Semiconductor memory device and method of writing and reading out information for the same
Semiconductor memory device and method of writing and reading out ...
