A new method is provided whereby a copper seed layer is deposited over a barrier layer of TaN. Under the first embodiment of the invention, a doped seed layer is deposited over the barrier layer. Under the second embodiment of the invention a thin layer of metal is deposited over a seed layer of pure...http://www.google.fr/patents/US6303498?utm_source=gb-gplus-shareBrevet US6303498 - Method for preventing seed layer oxidation for high aspect gap fill
Method for preventing seed layer oxidation for high aspect gap fill
