A programmable read-only memory device and method of fabrication are disclosed having an antifuse in the drain node of a field effect transistor. Programming is accomplished by imposing a high voltage on the transistor drain and gate which causes the antifuse to be a closed circuit; otherwise, the transistor...http://www.google.fr/patents/US5282158?utm_source=gb-gplus-shareBrevet US5282158 - Transistor antifuse for a programmable ROM
