A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. A raised source/drain layer is formed on the semiconductor substrate adjacent the gate and the gate dielectric....http://www.google.fr/patents/US6933579?utm_source=gb-gplus-shareBrevet US6933579 - Semiconductor solid phase epitaxy damage control method and integrated circuit produced thereby
Semiconductor solid phase epitaxy damage control method and integrated ...
