A semiconductor device according to an aspect of the invention comprises an n-type FinFET which is provided on a semiconductor substrate and which includes a first fin, a first gate electrode crossing a channel region of the first fin via a gate insulating film in three dimensions, and contact regions...http://www.google.fr/patents/US20110260253?utm_source=gb-gplus-shareBrevet US20110260253 - SEMICONDUCTOR DEVICE
