A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device on a first surface of a silicon carbide substrate and with at least one metal contact...http://www.google.fr/patents/US6649497?utm_source=gb-gplus-shareBrevet US6649497 - Method of forming vias in silicon carbide and resulting devices and circuits
Method of forming vias in silicon carbide and resulting devices and circuits
