Low resistivity, C54-phase TiSi2 is formed in narrow lines on heavily doped polysilicon by depositing a bi-layer silicon film. A thin, undoped amorphous layer is deposited on top of a heavily doped layer. The thickness of the undoped amorphous Si is about 2.4 times the thickness of the subsequently deposited...http://www.google.fr/patents/US7144807?utm_source=gb-gplus-shareBrevet US7144807 - Low resistivity titanium silicide on heavily doped semiconductor
Low resistivity titanium silicide on heavily doped semiconductor
