This invention relates to a semiconductor processing method for producing a semiconductor wafer having shallow buried contacts in a first region of the wafer and deep buried contacts in a second region of the wafer. The method, in it preferred form, includes: (a) defining first and second active areas...http://www.google.fr/patents/US5232874?utm_source=gb-gplus-shareBrevet US5232874 - Method for producing a semiconductor wafer having shallow and deep buried contacts
Method for producing a semiconductor wafer having shallow and deep buried ...
