General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor...http://www.google.fr/patents/US20040197951?utm_source=gb-gplus-shareBrevet US20040197951 - Membrane IC fabrication
Numéro de demande: 10/700,429 Numéro de publication: US 2004/0197951 A1 Date de dépôt: 3 nov. 2003 Brevet délivré: US7670893 ( Date de délivrance 2 mars 2010)
