Provided are a multi-bit memory device having resistive material layers as a storage node, and methods of manufacturing and operating the same. The memory device includes a substrate, a transistor formed on the substrate, and a storage node coupled to the transistor, wherein the storage node includes:...http://www.google.fr/patents/US7718988?utm_source=gb-gplus-shareBrevet US7718988 - Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
Multi-bit memory device having resistive material layers as storage node and ...
