A magnetoresistive memory array which has a row of active sense lines with each sense line including magnetoresistive bits and word lines extending over the bits. Each active sense line ending in a termination bit having a configuration selected to cause an adjacent bit to experience a magnetic field...http://www.google.fr/patents/US5982658?utm_source=gb-gplus-shareBrevet US5982658 - MRAM design to reduce dissimilar nearest neighbor effects
MRAM design to reduce dissimilar nearest neighbor effects
