A charge storage layer (112) in a gate insulating film of a cell transistor is so formed as not to extend from a channel region of a cell to an element isolation region. Since no electric charge moves from the charge storage layer (112) on the channel onto the element isolation region, the charge retention...http://www.google.fr/patents/US20020033501?utm_source=gb-gplus-shareBrevet US20020033501 - Nonvolatile semiconductor memory and method of fabricating the same
Nonvolatile semiconductor memory and method of fabricating the same
