The present invention relates to a semiconductor device comprising a first MISFET group and a second MISFET group each formed on a semiconductor substrate. Upon fabrication of it, an MOSFET constituting a memory cell and an MOSFET constituting a peripheral circuit are not formed in the same step. When...http://www.google.fr/patents/US6537882?utm_source=gb-gplus-shareBrevet US6537882 - Method of fabricating a semiconductor device in which no side walls are formed adjacent the gates of the MOSFETs of the memory cell
Method of fabricating a semiconductor device in which no side walls are ...
