A semiconductor fabrication method for fabricating a flash EEPROM (electrically erasable and programmable read-only memory) device uses STI (shallow-trench isolation) technique to form the field oxide isolation layers so as to make the EEPROM device suitable for fabrication at the submicron level of...http://www.google.fr/patents/US6017796?utm_source=gb-gplus-shareBrevet US6017796 - Method of fabricating flash electrically-erasable and programmable read-only memory (EEPROM) device
Method of fabricating flash electrically-erasable and programmable read-only ...
