A combination of a doping process and the use of side walls which allows the source and drain of a thin film transistor of an active matrix circuit to be doped with only one of N-type and P-type impurities and which allows the source and drain of a thin film transistor used in a peripheral circuit...http://www.google.fr/patents/US5712495?utm_source=gb-gplus-shareBrevet US5712495 - Semiconductor device including active matrix circuit
Semiconductor device including active matrix circuit
